CN201181702Y - 薄型焊接式整流桥堆 - Google Patents

薄型焊接式整流桥堆 Download PDF

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CN201181702Y
CN201181702Y CNU2008200347318U CN200820034731U CN201181702Y CN 201181702 Y CN201181702 Y CN 201181702Y CN U2008200347318 U CNU2008200347318 U CN U2008200347318U CN 200820034731 U CN200820034731 U CN 200820034731U CN 201181702 Y CN201181702 Y CN 201181702Y
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diode chip
backlight unit
rectifier bridge
brace
bridge heap
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周根明
葛永明
张洪海
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Suzhou Good Ark Electronics Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8434—Bonding interfaces of the connector
    • H01L2224/84345—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Power Engineering (AREA)
  • Rectifiers (AREA)

Abstract

一种薄型焊接式整流桥堆，该整流桥堆的环氧封装体内部由两块连接片、四个二极管芯片和两块框架支撑片组成；在厚度方向上，连接片、二极管芯片、框架支撑片分别位于上、中、下三层；在俯视平面上，第一连接片与第一、第二二极管芯片的正极端固定连接；第二连接片与第三、第四二极管芯片的负极端固定连接；第一框架支撑片与第一二极管芯片的负极端和第四二极管芯片的正极端固定连接；第二框架支撑片与第二二极管芯片的负极端和第三二极管芯片的正极端固定连接；第一连接片上的引脚作为正极输出端，第二连接片上的引脚作为负极输出端，两块框架支撑片上的引脚作为交流输入端。这样的结构设计有效的降低了整流桥堆的厚度，解决了各部件定位难的问题，简化了生产工艺。

Description

薄型焊接式整流桥堆
技术领域
本实用新型涉及一种二极管桥式整流器，具体涉及一种薄型焊接式整流桥堆。
背景技术
桥式整流器是由四个整流二极管组成的一个桥式结构，它利用二极管的单向导电特性对交流电进行整流，由于桥式整流器对输入正弦波的利用效率比半波整流高一倍，是对二极管半波整流的一种显著改进，故被广泛应用于交流电转换成直流电的电路中。
随着电子产品向小型化方向发展，要求半导体电子器件的外形做得又小又薄，而传统的微型桥堆采用的是上下两层的方式将四个整流二极管按照电路结构焊接组合起来，因此加上环氧树脂层的厚度，该产品的总厚度一般在2.5～2.7mm左右，不仅占用了电子产品内部比较多的容置空间，且由于多层结构的设置使得桥堆生产加工的工艺步骤增多，同时给各层部件安装定位提出了较高的要求。
发明内容
本实用新型提供一种薄型焊接式整流桥堆，其目的在于解决现有二极管整流桥堆厚度大、各部件定位难及生产工艺复杂的问题。
为达到上述目的，本实用新型采用的技术方案是：一种薄型焊接式整流桥堆，该整流桥堆的环氧封装体内部由两块连接片、四个二极管芯片和两块框架支撑片组成；在整流桥堆的厚度方向上，两块连接片位于上层，四个二极管芯片位于中间层，两块框架支撑片位于下层；在整流桥堆的俯视平面上，第一连接片与第一、第二二极管芯片的正极端固定连接；第二连接片与第三、第四二极管芯片的负极端固定连接；第一框架支撑片与第一二极管芯片的负极端和第四二极管芯片的正极端固定连接；第二框架支撑片与第二二极管芯片的负极端和第三二极管芯片的正极端固定连接；第一连接片上的引脚作为正极输出端，第二连接片上的引脚作为负极输出端，两块框架支撑片上的引脚作为交流输入端。
上述技术方案中的有关内容解释如下：
1、上述方案中，所述框架支撑片是框架的一部分，设于整流桥堆的底部，用于承载二极管芯片等其他部件。
2、上述方案中，所述“在整流桥堆的厚度方向上，两块连接片位于上层，四个二极管芯片位于中间层，两块框架支撑片位于下层”是指第一层是连接片设置层，第二层是二极管芯片布置层，第三层是框架支撑片设置层，各部件在各层平铺设置，有助于减小整流桥堆的整体厚度。
本实用新型工作原理及优点为：本实用新型采用将各部件分层平铺设置的方式，有效的降低了整流桥堆的厚度，并解决了原有整流桥堆各部件定位难的问题，同时简化了生产工艺。
附图说明
附图1为二极管整流桥堆电路结构示意图；
附图2为本实用新型结构俯视示意图；
附图3为本实用新型框架支撑片结构俯视示意图；
附图4为本实用新型连接片结构俯视示意图；
附图5为图2的A-A向截面剖视示意图。
以上附图中：1、连接片；2、二极管芯片；3、框架支撑片；4、正极输入端；5、负极输入端；6、交流输出端；7、环氧封装体；11、第一连接片；12、第二连接片；21、第一二极管芯片；22、第一二极管芯片；23、第三二极管芯片；24、第四二极管芯片；31、第一框架支撑片；32、第二框架支撑片。
具体实施方式
下面结合附图及实施例对本实用新型作进一步描述：
实施例：参见附图2～5所示，
一种薄型焊接式整流桥堆，该整流桥堆的环氧封装体7内部由两块连接片1、四个二极管芯片2和两块框架支撑片3组成；
其中：在整流桥堆的厚度方向上(如图5)，两块连接片1位于上层，四个二极管芯片2位于中间层，两块框架支撑片3位于下层，即第一层是连接片1设置层，第二层是二极管芯片2布置层，第三层是框架支撑片3设置层，各部件在各层平铺设置，有助于减小整流桥堆的整体厚度。
在整流桥堆的俯视平面上(如图2～4)，第一连接片11与第一、第二二极管芯片21、22的正极端固定连接；第二连接片12与第三、第四二极管芯片23、24的负极端固定连接；第一框架支撑片31与第一二极管芯片21的负极端和第四二极管芯片24的正极端固定连接；第二框架支撑片32与第二二极管芯片22的负极端和第三二极管芯片23的正极端固定连接；
第一连接片11上的引脚作为正极输出端4，第二连接片12上的引脚作为负极输出端5，两块框架支撑片3上的引脚作为交流输入端6。
所述框架支撑片3是框架的一部分，设于整流桥堆的底部，用于承载二极管芯片2及其他部件。
本实用新型采用将各部件分层平铺设置的方式，有效的降低了整流桥堆的厚度，并解决了原有整流桥堆各部件定位难的问题，同时简化了生产工艺。
上述实施例只为说明本实用新型的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本实用新型的内容并据以实施，并不能以此限制本实用新型的保护范围。凡根据本实用新型精神实质所作的等效变化或修饰，都应涵盖在本实用新型的保护范围之内。

Claims (1)

1、一种薄型焊接式整流桥堆，其特征在于：该整流桥堆的环氧封装体内部由两块连接片、四个二极管芯片和两块框架支撑片组成；
在整流桥堆的厚度方向上，两块连接片位于上层，四个二极管芯片位于中间层，两块框架支撑片位于下层；
在整流桥堆的俯视平面上，第一连接片与第一、第二二极管芯片的正极端固定连接；第二连接片与第三、第四二极管芯片的负极端固定连接；第一框架支撑片与第一二极管芯片的负极端和第四二极管芯片的正极端固定连接；第二框架支撑片与第二二极管芯片的负极端和第三二极管芯片的正极端固定连接；
第一连接片上的引脚作为正极输出端，第二连接片上的引脚作为负极输出端，两块框架支撑片上的引脚作为交流输入端。
CNU2008200347318U 2008-04-18 2008-04-18 薄型焊接式整流桥堆 Expired - Fee Related CN201181702Y (zh)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832206A (zh) * 2011-06-15 2012-12-19 上海金克半导体设备有限公司 贴片直列式小型桥堆
CN105609478A (zh) * 2014-11-14 2016-05-25 英飞凌科技股份有限公司 电连接组件、半导体模块和用于制造半导体模块的方法
WO2017161670A1 (zh) * 2016-03-25 2017-09-28 苏州固锝电子股份有限公司 抗浪涌型表面贴装半导体器件
WO2019085442A1 (zh) * 2017-10-31 2019-05-09 苏州固锝电子股份有限公司 高强度整流桥器件
CN110085579A (zh) * 2019-04-25 2019-08-02 广东美的制冷设备有限公司 高集成智能功率模块及其制作方法以及空调器
CN111584453A (zh) * 2020-05-25 2020-08-25 苏州达晶微电子有限公司 高可靠性表面贴装半波器件

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832206A (zh) * 2011-06-15 2012-12-19 上海金克半导体设备有限公司 贴片直列式小型桥堆
CN105609478A (zh) * 2014-11-14 2016-05-25 英飞凌科技股份有限公司 电连接组件、半导体模块和用于制造半导体模块的方法
US9991609B2 (en) 2014-11-14 2018-06-05 Infineon Technologies Ag Electrical connection module, semiconductor module and method for producing a semiconductor module
CN105609478B (zh) * 2014-11-14 2018-11-16 英飞凌科技股份有限公司 电连接组件、半导体模块和用于制造半导体模块的方法
WO2017161670A1 (zh) * 2016-03-25 2017-09-28 苏州固锝电子股份有限公司 抗浪涌型表面贴装半导体器件
WO2019085442A1 (zh) * 2017-10-31 2019-05-09 苏州固锝电子股份有限公司 高强度整流桥器件
CN110085579A (zh) * 2019-04-25 2019-08-02 广东美的制冷设备有限公司 高集成智能功率模块及其制作方法以及空调器
CN110085579B (zh) * 2019-04-25 2022-03-25 广东美的制冷设备有限公司 高集成智能功率模块及其制作方法以及空调器
CN111584453A (zh) * 2020-05-25 2020-08-25 苏州达晶微电子有限公司 高可靠性表面贴装半波器件
CN111584453B (zh) * 2020-05-25 2023-04-28 苏州达晶微电子有限公司 高可靠性表面贴装半波器件

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