CN1992100A - 用于周壁绝缘的复合涂层、其制备方法及由其得到的制品 - Google Patents
用于周壁绝缘的复合涂层、其制备方法及由其得到的制品 Download PDFInfo
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- CN1992100A CN1992100A CNA200610172957XA CN200610172957A CN1992100A CN 1992100 A CN1992100 A CN 1992100A CN A200610172957X A CNA200610172957X A CN A200610172957XA CN 200610172957 A CN200610172957 A CN 200610172957A CN 1992100 A CN1992100 A CN 1992100A
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- 230000002902 bimodal effect Effects 0.000 description 1
- 229910052626 biotite Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229930188620 butyrolactone Natural products 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 235000010216 calcium carbonate Nutrition 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- ZOMBKNNSYQHRCA-UHFFFAOYSA-J calcium sulfate hemihydrate Chemical compound O.[Ca+2].[Ca+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O ZOMBKNNSYQHRCA-UHFFFAOYSA-J 0.000 description 1
- VNSBYDPZHCQWNB-UHFFFAOYSA-N calcium;aluminum;dioxido(oxo)silane;sodium;hydrate Chemical compound O.[Na].[Al].[Ca+2].[O-][Si]([O-])=O VNSBYDPZHCQWNB-UHFFFAOYSA-N 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- NPAXBRSUVYCZGM-UHFFFAOYSA-N carbonic acid;propane-1,2-diol Chemical compound OC(O)=O.CC(O)CO NPAXBRSUVYCZGM-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910001596 celadonite Inorganic materials 0.000 description 1
- 229910001567 cementite Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical group O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 1
- 150000004826 dibenzofurans Chemical class 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- FPAFDBFIGPHWGO-UHFFFAOYSA-N dioxosilane;oxomagnesium;hydrate Chemical compound O.[Mg]=O.[Mg]=O.[Mg]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O FPAFDBFIGPHWGO-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052631 glauconite Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- 229910052621 halloysite Inorganic materials 0.000 description 1
- KWLMIXQRALPRBC-UHFFFAOYSA-L hectorite Chemical compound [Li+].[OH-].[OH-].[Na+].[Mg+2].O1[Si]2([O-])O[Si]1([O-])O[Si]([O-])(O1)O[Si]1([O-])O2 KWLMIXQRALPRBC-UHFFFAOYSA-L 0.000 description 1
- 229910000271 hectorite Inorganic materials 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- KSOKAHYVTMZFBJ-UHFFFAOYSA-N iron;methane Chemical compound C.[Fe].[Fe].[Fe] KSOKAHYVTMZFBJ-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910052629 lepidolite Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical group C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 238000011415 microwave curing Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052901 montmorillonite Inorganic materials 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000008239 natural water Substances 0.000 description 1
- 229910052664 nepheline Inorganic materials 0.000 description 1
- 239000010434 nepheline Substances 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- AJCDFVKYMIUXCR-UHFFFAOYSA-N oxobarium;oxo(oxoferriooxy)iron Chemical compound [Ba]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O AJCDFVKYMIUXCR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 239000010451 perlite Substances 0.000 description 1
- 235000019362 perlite Nutrition 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 150000003053 piperidines Chemical class 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920001652 poly(etherketoneketone) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 229920006376 polybenzimidazole fiber Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920001290 polyvinyl ester Polymers 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 229920001291 polyvinyl halide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011044 quartzite Substances 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000002444 silanisation Methods 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 239000010435 syenite Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 150000004684 trihydrates Chemical class 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000010456 wollastonite Substances 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
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- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3146—Carbon layers, e.g. diamond-like layers
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- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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- B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
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- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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- B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
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- B29C48/154—Coating solid articles, i.e. non-hollow articles
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- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
本发明公开了一种制品,其包括电气组件;和在该电气组件上配置的电绝缘层,其中该电绝缘层包括热固性聚合物和纳米填料;其中纳米填料包括平均最大尺寸小于或等于约200nm的金属氧化物和金刚石纳米微粒。
Description
技术领域
本发明涉及用于诸如发动机、发电机等电磁装置中用于周壁(groundwall)绝缘的复合涂层、其制备方法及由其得到的制品。
背景技术
用于电气装置的电气组件周壁绝缘材料通常由多层材料制成。多层结构促成较高的耐电晕放电。对于绝缘层来说,具有高击穿电压值以便它能够经得起电气装置比如发动机和发电机的高电压环境也是理想的。多层结构通常由玻璃制造的纤维衬背和由云母制造的附加层组成。多层结构的使用既耗时又昂贵。此外,使用多层结构通常导致绝缘层较厚和部件较大。
因此,当与由多层材料制成的绝缘材料相比,通常理想的是使用可以单步工艺涂敷而且能够经得起较高的电压,同时厚度减小的绝缘层。
发明内容
本发明公开了一种制品,其包括电气组件;和在该电气组件上配置的电绝缘层,其中电绝缘层包括热固性聚合物和纳米填料;其中纳米填料包括平均最大尺寸小于或等于约200nm的金刚石纳米微粒或者金属氧化物和金刚石纳米微粒的组合。
本发明还公开了一种制品的制造方法,该方法包括将电绝缘层配置在电气组件上,其中电绝缘层包括热固性聚合物和纳米填料;其中纳米填料包括平均最大尺寸小于或等于约200nm的金刚石纳米微粒或者金属氧化物和金刚石纳米微粒的组合;和固化热固性聚合物。
本发明还公开了一种包括热固性聚合物和纳米填料的组合物;其中纳米填料包括平均最大尺寸小于或等于约200nm的金刚石纳米微粒或者金属氧化物和金刚石纳米微粒的组合。
本发明还公开了一种方法,其包括将定子线棒送入冲模的中心孔,其中中心孔具有足够允许冲模在定子线棒上作相对运动的结构;挤压绝缘层到冲模中以便将它同时沉积在定子线棒的每个侧面上;其中绝缘层包括热固性聚合物和纳米填料;其中纳米填料包括平均最大尺寸小于或等于约200nm的金刚石纳米微粒或者金属氧化物和金刚石纳米微粒的组合;和沿着定子线棒的整个长度来回移动冲模。
具体实施方式
值得注意得是,这里使用的术语“第一”、“第二”等等并不表示任何顺序、数量或者重要性,而是用于将一个与另一个元素相区别。术语“一”并不表示数量的限制,而是表示存在至少一个所述项目。与数量相关使用的修饰语“约”包括所述值并且具有通过上下文确定的意义(例如包括与特定数量测量有关的误差度)。应当注意,说明书中公开的所有范围都是包含在内的并且是可以独立结合的。
本发明公开了一种绝缘层,其可以用来保护和隔离电气装置如发动机、发电机等等的电气组件。本发明还公开了一种在用于电气装置的电气组件上施涂该绝缘层的方法。这种电气组件的适合的例子包括电导线圈、定子线棒、或者里面的定子片等等。绝缘层通常包括热固性聚合物和纳米填料。本发明的一个实施方案中,纳米填料包括金属氧化物和金刚石的组合。本发明的另一实施方案中,纳米填料包括金刚石。纳米填料还可以任选地包括纳米矿物填料和/或纳米粘土。
该绝缘层的优势在于它可以以约30-约300μm的厚度施涂于电气元件,这种厚度一般小于或等于其他市售绝缘层的厚度。该绝缘层还具有另一个优点,即具有能够经得起约250-约1000MPa压力的耐压强度和硬度。申请的该绝缘层也提供排除通常被用于电气装置的带绕(tape wound)、云母和聚合物周壁绝缘材料或者槽衬材料的可能性。该绝缘层能够容易地以单步工艺例如浸涂、喷涂、挤塑、共挤塑等等施涂。它也提供了较薄绝缘层的可能性,并且由于其具有耐高电压的能力而提供了更坚固的绝缘材料。与不含有纳米填料的其它相当的绝缘材料相比,它也显示出显著的耐电晕性并且显示出更好的导热性。
在本发明的一个示例性实施方案中,绝缘层包括室温下弹性模量小于或等于约105GPa的弹性体。该弹性体通常包括热固性聚硅氧烷树脂和纳米填料。该弹性体绝缘层的优点是在室温拉伸试验中显示出大于或等于约200%的伸长率,同时在发电机的通用温度下经历加压或拉伸时基本上未显示出蠕变。
热固性聚合物通常包括的聚合物可以为均聚物、共聚物、离聚物、树状聚合物或者包括至少一种上述可以共价交联的聚合物的组合,其中共聚物可以为例如星形嵌段共聚物、接枝共聚物、交替嵌段共聚物或者无规共聚物。热固性聚合物合适的例子是例如聚氨酯、环氧树脂、酚醛树脂、硅氧烷、聚丙烯酸类树脂、聚碳酸酯聚苯乙烯、聚酯、聚酰胺、聚酰胺亚胺、聚芳酯、聚芳砜、聚醚砜、聚苯硫醚、聚砜、聚酰亚胺、聚醚酰亚胺、聚四氟乙烯、聚醚酮、聚醚醚酮、聚醚酮酮、聚苯并唑、聚二唑、聚苯并噻嗪并吩噻嗪、聚苯并噻唑、聚吡嗪喹喔啉、聚均苯四酰亚胺、聚喹喔啉、聚苯并咪唑、聚羟吲哚、聚氧代异二氢吲哚、聚二氧代异二氢吲哚、聚三嗪、聚哒嗪、聚哌嗪、聚吡啶、聚哌啶、聚三唑、聚吡唑、聚碳硼烷、聚氧杂二环壬烷、聚二苯并呋喃、聚酞酸树脂、聚缩醛、聚酐、聚乙烯醚、聚乙烯硫醚、聚乙烯醇、聚乙烯酮、聚乙烯卤化物、聚乙烯腈、聚乙烯酯、聚磺酸盐、聚硫醚、聚硫酯、聚砜、聚磺酰胺、聚脲、聚磷腈(polyphosphazene)、聚硅氮烷、聚丁二烯、聚异戊二烯等等,或者包括至少一种上述热固性聚合物的组合。也可以使用热固性聚合物的共混物。示例性的热固性聚合物为硅氧烷聚合物。这里使用的术语“聚合物”表示小分子(例如单体、二聚物、三聚物等等)、均聚物或者共聚物。
如上所述,该热固性聚合物可以是弹性体。热固性聚合物的例子为聚丁二烯、聚异戊二烯、聚硅氧烷、聚氨酯等等、或者包括至少一种上述弹性体的组合。示例性的热固性聚合物是聚硅氧烷聚合物(以下称为硅氧烷聚合物)。
可用于制备绝缘层的硅氧烷聚合物在反应形成热固性树脂之前通常具有式(I)所示的结构;
其中R1、R2、R3、R4、R5和R6可以相同或者不同,并且在交联之前R1、R2、R3、R4、R5和R6中的至少一个为反应性官能团;m和n可以为包括0在内的任意整数,但是m和n不能同时为0。一般来说,虽然优选R1、R2、R3、R4、R5和R6中的至少一个是反应性的,但通常理想的是R1、R2、R3、R4、R5或R6中的两个或优选三个是化学反应性的。通常理想的是m+n为约1-约50,000。在式(I)中可以作为R1、R2、R3、R4、R5或R6存在的基团的合适例子为烷基、芳基、芳烷基、含氟烷基、乙烯基烷基、氨基烷基、乙烯基、环氧基、氢化物、硅烷醇、胺、甲醇(加氢烷基)、甲基丙烯酸酯、丙烯酸酯、巯基、卤代烷基、卤素、羧酸酯、乙酰氧基、烷氧基等等。示例性的反应性官能团为乙烯基和环氧基。示例性的非反应性官能团为烷基、含氟烷基或者苯基。示例性的硅氧烷聚合物为具有甲基、苯基和羟基官能团的凝聚固化硅氧烷。市场上可以购买的硅氧烷聚合物之一是从General Electric Silicones,Waterford,New York购得的MC 550 BKH。MC 550 BKH含有78wt%的增强剂。该增强剂不是纳米级的,并包括重量比为80∶20的熔融的二氧化硅和玻璃纤维。然后在这种材料中加入所感兴趣的纳米填料。
通常理想的是热固性聚合物在反应形成热固性聚合物之前具有约75-约500,000克/摩尔(g/mol)的数均分子量。在一个实施方案中,通常理想的是热固性聚合物在反应形成热固性聚合物之前具有约150-约100,000g/mol的数均分子量。在另一个实施方案中,通常理想的是热固性聚合物在反应形成热固性聚合物之前具有约300-约75,000g/mol的数均分子量。在另一个实施方案中,通常理想的是热固性聚合物在反应形成热固性聚合物之前具有约450-约50,000g/mol的数均分子量。在反应形成热固性聚合物之前热固性聚合物的示例性数均分子量为约75-5,000g/mol。
通常理想的是使用占绝缘层总重量约50-98wt%的热固性聚合物。在一个实施方案中,理想的是使用占绝缘层总重量约55-90wt%的热固性聚合物。在另一个实施方案中,理想的是使用占绝缘层总重量约60-85wt%的热固性聚合物。在另一个实施方案中,理想的是使用占绝缘层总重量约65-80wt%的热固性聚合物。
为了增加交联密度,热固性聚合物可以任选与反应性前体如硅烷混和。合适的硅烷为氯硅烷、乙烯基硅烷、乙烯基烷氧基硅烷、烷基乙酰氧基硅烷等等。氯硅烷合适的例子为甲基三氯硅烷和二甲基二氯硅烷。通常理想的是二甲基二氯硅烷含有约1-约35mol%的羟基。在一个实施方案中,理想的是二甲基二氯硅烷含有约2-约15mol%的羟基。在一个实施方案中,理想的是二甲基二氯硅烷含有约4-约8mol%的羟基。
一般理想的是使用占热固性聚合物总重量约0.1-50wt%的反应性前体。在一个实施方案中,理想的是使用占热固性聚合物总重量约0.5-约40wt%的反应前体。在另一个实施方案中,理想的是使用占热固性聚合物总重量约1-约30wt%的反应前体。在又一个实施方案中,理想的是使用占热固性聚合物总重量的约1.2-约25wt%的反应前体。
绝缘层可以任选含有非纳米级的增强剂。增强剂是具有大于或等于约500纳米(nm)颗粒尺寸的填料。合适的增强剂是二氧化硅粉,例如熔凝二氧化硅、结晶二氧化硅、天然硅砂和各种硅烷涂覆的二氧化硅;滑石,包括纤维的、模块的、针状的和薄片状的滑石;玻璃球,中空的和实心的,及表面处理的玻璃球;高岭土,包括硬质、轻质和煅烧高岭土;云母,包括镀金属云母和用氨基硅烷、丙烯酰基硅烷、六亚甲基二硅氮烷或者使复配共混物具有良好物理性质的化学组成类以于热固性聚合物的涂层处理表面的云母;长石和霞石正长岩;硅酸盐球;煤胞;fillite;铝硅酸盐(阿尔莫斯菲尔飞灰微珠填充剂),包括硅烷化过的和镀金属的铝硅酸盐;石英;石英岩;珍珠岩;硅藻石;硅藻土;金刚砂;硫化钼;硫化锌;硅酸铝(多铝红柱石);合成硅酸钙;硅酸锆;钛酸钡;钡铁氧体;硫酸钡和重晶石;片状填料和增强物例如玻片、片状金刚砂、二硼化铝;经加工的矿物纤维,例如来源于包括硅酸铝、氧化铝、氧化镁和硫酸钙半水合物的至少一种的共混物的那些;合成增强纤维,包括聚酯纤维,例如聚对苯二甲酸乙二醇酯纤维、聚乙烯醇纤维、芳族聚酰胺纤维、聚苯并咪唑纤维、聚酰亚胺纤维、聚苯硫醚纤维、聚醚醚酮纤维、硼纤维、陶瓷纤维如金刚砂、氧化铝和氧化硼以及氧化硅混和得到的纤维;单晶光纤或者“须晶”包括金刚砂纤维、氧化铝纤维、碳化硼纤维、玻璃纤维,包括纺织玻璃纤维例如E、A、C、ECR、R、S、D和NE玻璃、玻璃纤维和石英;等等,或者包括至少一种上述增强剂的组合。
示例性的增强剂是熔凝二氧化硅和玻璃纤维。通常理想的是熔凝二氧化硅和玻璃纤维的重量比为约1∶5到约10∶1。在一个实施方案中,熔凝二氧化硅和玻璃纤维的重量比为约1∶3到约8∶1。在另一个实施方案中,熔凝二氧化硅和玻璃纤维的重量比为约1∶1到约6∶1。示例性的熔凝二氧化硅和玻璃纤维的重量比为约4∶1。
当存在时,增强剂的用量占绝缘层总重量的约20-约90wt%。在一个实施方案中,理想的是增强剂的用量占绝缘层总重量的约30-约85wt%。在另一个实施方案中,理想的是增强剂的用量占绝缘层总重量的约50-约80wt%。示例性的增强剂的用量占绝缘层总重量的约78wt%。
如上所述,该绝缘层包括纳米填料。纳米填料为微粒的至少一个特征长度即平均最大尺寸小于或等于约200nm的那些。特征长度可以是直径、晶面棱边、长度等等。纳米填料可以具有其维数由整数限定的形状,例如微粒的形状可以为一维的、二维的或者三维的。它们也可以具有其维数不由整数限定的形状(例如它们可以以不规则碎片形式存在)。纳米填料可以以球形、片状、纤维状、须晶状等形式,或者以包括至少一种上述形式的组合存在。这些填料截面的几何形状可以为圆形的、椭圆形的、三角形的、矩形的、多边形的或者包括至少一个上述几何形状在内的组合。市售的填料在引入到绝缘层之前或甚至在引入到绝缘层之后可以以团粒或者团块形式存在。团粒包括超过一种彼此物理接触的填料微粒,而团块包括超过一种彼此物理接触的团粒。
在一个实施方案中,纳米填料包括平均粒度小于或等于约200nm的金刚石纳米微粒。在另一个实施方案中,金刚石纳米微粒的平均粒度小于或等于约75nm。在另一个实施方案中,金刚石纳米微粒的纳米填料为平均粒度小于或等于约50nm。在另一个实施方案中,金刚石纳米微粒的平均粒度小于或等于约25nm。示例性的纳米填料是平均粒度为约50nm的金刚石纳米微粒。
加入的金刚石纳米微粒的量可以占绝缘层总重量的约1-约50wt%。在另一个实施方案中,加入的金刚石纳米微粒的量可以占绝缘层总重量的约3-约40wt%。在另一个实施方案中,加入的金刚石纳米微粒的量可以占绝缘层总重量的约5-约30wt%。示例性的金刚石纳米微粒的量占绝缘层总重量的约15wt%。
如上所述,纳米填料包括金刚石纳米微粒或者金属氧化物纳米微粒(纳米金属氧化物)和金刚石纳米微粒的组合。在一个实施方案中,纳米金属氧化物可以为陶瓷材料形式(即以化学方法或者机械化学方法合成的金属氧化物粉末)。可用于绝缘层的纳米金属氧化物为碱金属(alkali earth metals)、碱土金属(alkalineearth metals)、过渡金属及其他商业上使用的金属的金属氧化物。金属氧化物的合适例子为氧化钙、氧化铈、氧化镁、二氧化钛、氧化锌、二氧化硅、一氧化铜、氧化铝(例如矾土和/或气相法矾土)、二氧化硅(例如二氧化硅和/或者气相法二氧化硅)等等或者包括至少一种上述金属氧化物的组合。纳米金属碳化物例如金刚砂、碳化钛、碳化钨、碳化铁等等或者包括至少一种上述金属碳化物的组合也可以用于绝缘层。示例性的金属氧化物是气相法矾土、矾土、气相法二氧化硅、二氧化硅和包括至少一种上述金属氧化物的组合。
金属氧化物和金属碳化物通常为具有约1-约1000m2/g表面积的微粒。在此范围中,通常理想的是金属氧化物和碳化物具有约大于或等于5m2/g的表面积,特别是大于或等于约10m2/g,更特别地大于或等于约15m2/g。在此范围中也理想的是表面积小于或等于约950m2/g,特别是小于或等于约900m2/g,更特别地小于或等于约875m2/g。
通常理想的是纳米金属氧化物和金属碳化物微粒具有约0.2-约2.5克每立方厘米的体积密度;真实密度为约3-约7克每立方厘米和约10-250埃的平均孔径。
市售的纳米金属氧化物的例子为NANOACTIVETM氧化钙、NANOACTIVETM氧化钙附加物(plus)、NANOACTIVETM氧化铈、NANOACTIVETM氧化镁、NANOACTIVETM氧化镁附加物、NANOACTIVETM二氧化钛、NANOACTIVETM氧化锌、NANOACTIVETM二氧化硅、NANOACTIVETM一氧化铜、NANOACTIVETM氧化铝、NANOACTIVETM氧化铝附加物,以上制品均可以购自NanoScale Materials Incorporated。市售的纳米金属碳化物的例子是碳氮化钛、金刚砂、金刚砂-四氮化三硅和碳化钨,均购自Pred Materials International Incorporated。
示例性类型的纳米填料为式(II)所示的铁氧体纳米微粒:
(MeO)x(Fe2O3)100-x (II)
其中“MeO”是任何二价的铁氧体形成金属氧化物或者包括两个或多个二价金属氧化物的组合,而“x”小于50mol%。铁氧体形成二价金属氧化物的合适例子是氧化铁(FeO)、氧化锰(MnO)、氧化镍(NiO)、一氧化铜(CuO)、氧化锌(ZnO)、氧化钴(CoO)、氧化镁(MgO)、氧化钙(CaO)、氧化铈(Ce2O3)等等。单一金属氧化物、多金属氧化物、掺杂氧化物也是可以用于绝缘层的。
市售铁氧体形成金属氧化物的合适例子是具有30nm和80nm平均最大尺寸的氧化锌。上述所有市售铁氧体形成金属氧化物均可以购自澳大利亚St.Welshpool的Advanced Powder Technology。
其它市售的金属氧化物的例子是具有小于或等于约20nm粒度的氧化铈;具有小于或等于约20nm粒度的掺钆的氧化铈;具有小于或等于约20nm粒度的掺钐的氧化铈等等,或者包括至少一种上述金属氧化物的组合。上述所有市售的包括氧化铈的铁氧体形成金属氧化物可以购自Atlanta,Ga的MicrocoatingTechnologies。
市售的铁氧体纳米填料的合适例子是NanoProducts,Inc.制造和销售的Ni0.5Zn0.5Fe2O4。Ni0.5Zn0.5Fe2O4晶粒大小为12nm,比表面积是45平方米/克(m2/g),当量球径是47nm。
当使用铁氧体纳米填料时,它们的用量可以为绝缘层总重量的约2-约15wt%。在一个实施方案中,铁氧体纳米填料的用量为绝缘层总重量的约3-约12wt%。在另一个实施方案中,铁氧体纳米填料的用量为绝缘层总重量的约4-约12wt%。在示例性实施方案中,铁氧体纳米填料的用量为绝缘层总重量的约5wt%。
其他纳米填料的合适例子为纳米矿物填料,例如石棉、毛玻璃、高岭土及其他粘土矿物,二氧化硅,硅酸钙,碳酸钙(白垩),氧化镁,氧化锌,硅酸铝,硫酸钙,碳酸镁,硅酸钠,碳酸钡,硫酸钡(重晶石),云母,滑石粉,氧化铝三水合物,石英和硅灰石(硅酸钙)。云母是示例性的纳米矿物填料。
可以使用的云母的例子是钡铁脆云母、铁云母、黑云母、bityte、硼白云母、绿磷石、钽钨钛钙石、绿脆云母、钠珍珠云母、羟高铁云母、海绿石、锌云母、钡镁脆云母、锂云母、锰锂云母、白云母、南平石、钠云母、金云母、多硅锂云母、铝钠云母、钒云母、针叶云母、钠金云母、带云母、蛭石、翁钠金云母和铁锂云母。
云母的示例性形式为金云母(KMg3AlSi3O10(OH)2)或者白云母(K2Al4[Si6Al2O20](OH,F)4)。使金云母或者白云母或者两者经历约500-约850℃的高温加热处理。加热导致云母晶体部分地脱水并且释放出一部分天然结合在晶体中的水。当这种情况发生时,云母部分片状剥落,形成较小的微粒。然后研磨该云母以生产小纳米填料微粒。市售的合适形式的云母是VonRoll Isola的云母粉剂。
纳米填料例如纳米粘土(纳米级的粘土)也可以用于绝缘层。纳米粘土通常是片状材料,该粘土矿物一般选自蒙脱石、蛭石和埃洛石粘土。蒙脱石粘土又选自微晶高岭土、滑石、贝得石、nontrite、锂蒙脱石等等,或者包括至少一种上述粘土的组合。示例性粘土矿物是蒙脱粘土、多层铝硅酸盐。纳米粘土片晶一般地具有约3-约3000埃的厚度和在平面方向上约0.01-约100微米的尺寸。纳米粘土的纵横比一般为约10-约10,000左右。各个粘土片晶被腔隔开,即在粘土片晶平行层之间的空隙中含有各种离子使片晶保持相互连接。这种材料之一为购自Southern Clay Products的CLOISITE10A,其片晶具有约0.001微米(10埃)的厚度和在平面方向上约0.15-约0.2微米的尺寸。
在一个实施方案中,纳米填料、纳米矿物填料和/或纳米粘土的组合可以用于绝缘层。当使用该组合时,将其以占绝缘层总重量约1-约80wt%的量加入到绝缘层中。在一个实施方案中,纳米填料、纳米矿物填料和/或纳米粘土的组合的用量可以占绝缘层总重量的约2-约75wt%。在另一个实施方案中,纳米填料、纳米矿物填料和/或纳米粘土的组合的用量可以占绝缘层总重量的约3-约70wt%。示例性的绝缘层含有占绝缘层总重量约5wt%的金属氧化物纳米填料。另一个示例性的绝缘层含有占绝缘层总重量约20wt%的云母粉剂。
在一个实施方案中,可能理想的是将具有特定化学组成的纳米填料和具有相同化学组成的微米级填料一起添加到绝缘层中。微米级填料一般具有大于或等于约500nm的平均最大尺寸。例如,含有平均最大尺寸小于或等于约200nm的纳米微粒的云母粉剂可以和平均粒度为约50微米的微米级云母粉剂一同加入到绝缘层中。
一般说来,当纳米填料与具有相同化学组成的微米级填料一同使用时,通常理想的是纳米填料构成纳米填料和微米级填料的组合的总重量的至多约50wt%,更特别地至多约60wt%,且更加特别地至多约70wt%。
如上所述,纳米填料的形状没有特定的限制,可以为例如球状的、不规则的、片装的或者须晶状的。纳米填料一般可以具有至少一个特征长度的平均最大尺寸小于或等于约200nm;在一个实施方案中,纳米填料可以具有小于或等于约150nm的平均最大尺寸;在另一个实施方案中,纳米填料可以具有小于或等于约100nm的平均最大尺寸。在另一个实施方案中,纳米填料可以具有小于或等于约75nm的平均最大尺寸。在另一个实施方案中,纳米填料可以具有小于或等于约50nm的平均最大尺寸。
如上所述,纳米填料一般可以具有小于或等于约200nm的平均最大尺寸。在一个实施方案中,多于90%的纳米填料具有小于或等于约200nm的平均最大尺寸。在另一个实施方案中,多于95%的纳米填料具有小于或等于约200nm的平均最大尺寸。在另一个实施方案中,多于99%的纳米填料具有小于或等于约200nm的平均最大尺寸。双峰或者更高的粒度分布也可以使用。
纳米填料的使用量可以占绝缘层总重量的约1-约80wt%。在一个实施方案中,纳米填料的使用量可以为绝缘层总重量的约3-约75wt%。在另一个实施方案中,纳米填料的使用量可以为绝缘层总重量的约5-约70wt%。在另一个实施方案中,纳米填料的使用量可以为绝缘层总重量的约6-约60wt%。在示例性实施方案中,纳米填料的使用量可以为绝缘层总重量的约20wt%。
在一个实施方案中,纳米填料可以涂覆有硅烷偶联剂以便于与热固性聚合物结合。通常理想的是用于可固化聚合物树脂涂层的填料要用硅烷偶联剂处理,所述的硅烷偶联剂为例如四甲基氯硅烷、六二亚甲基二硅氮烷、γ-氨基丙氧基硅烷等等或者包括至少一种上述硅烷偶联剂的组合。硅烷偶联剂一般提高纳米填料与热固性聚合物的相容性,并且改善绝缘层的机械性能。
溶剂可以任选地用于绝缘层。溶剂可以用作粘度调节剂或者用于促进纳米填料的分散和/或悬浮。液态非质子性极性溶剂如碳酸丙二醇酯、碳酸乙二醇酯、丁内酯、乙腈、苯基氰、硝基甲烷、硝基苯、环丁砜、二甲基甲酰胺、N-甲基吡咯烷酮等等,或者包括至少一种上述溶剂的组合溶剂一般是理想的。可以使用极性质子溶剂例如但不仅限于水、甲醇、乙腈、硝基甲烷、乙醇、丙醇、异丙醇、丁醇等等,或者包括至少一种上述极性质子溶剂的组合溶剂。也可以使用其他的非极性溶剂如苯、甲苯、二氯甲烷、四氯化碳、己烷、乙醚、四氢呋喃等等,或者包括至少一种上述溶剂的组合溶剂。也可以使用包括至少一种非质子性极性溶剂和至少一种非极性溶剂的助溶剂。示例性的溶剂是二甲苯或者N-甲基吡咯烷酮。
若使用溶剂,则其使用量可以为绝缘层总重量的约1-约50wt%。在一个实施方案中,若使用溶剂,则其使用量可以为绝缘层总重量的约3-约30wt%。在另一个实施方案中,若使用溶剂,则其使用量为绝缘层总重量的约5-约20wt%。通常理想的是在固化热固性聚合物以前、期间和/或以后蒸发溶剂。
在制造绝缘层的一种方法中,为了促进混合,在高剪切水平条件下将热固性聚合物和纳米填料共混。给予热固性聚合物和纳米填料的混合物的剪切水平有效促进填料在热固性聚合物中的分散。在剪切过程中给予的能量为约0.001千瓦时/千克(kWhr/kg)-10kWhr/kg。在一个实施方案中,在剪切过程中给予的能量为约0.01-约8kWhr/kg。在另一个实施方案中,在剪切过程中给予的能量为约0.1-约6kWhr/kg。在另一个实施方案中,在剪切过程中给予的能量为约0.5-约4kWhr/kg。
剪切可以在熔融共混过程中提供或者可以通过其他的方法得到如对混合物施加超声波能。熔融共混设备的适当例子为挤出机例如单螺杆挤出机、双螺杆挤出机等等;布斯捏和机、辊炼机、涂料辊炼机、螺旋锥(helicones)、韦林氏共混机、Henschel混合机、班伯里密炼机(Banbury’s)等等,或者包括至少一种上述熔融共混机的组合。也可以进行超声波共混以促进纳米填料在热固性聚合物中的悬浮和/或分散。为了促进纳米填料的悬浮,理想的是将团粒和团块均磨碎成较小微粒。
如上所述,绝缘层配置在电器组件例如电导绕组或者定子线棒上或者在定子片的内部,并且经过固化。在一个实施方案中,电气组件包括铜。在绕组上配置绝缘层之前或者期间,可以向热固性聚合物和纳米填料的混合物中加入引发剂和/或交联催化剂。可以通过浸涂、喷涂、静电涂漆、刷涂、旋涂、注塑、共挤塑等等或者包括至少一种上述方法的组合方法将绝缘层施涂到绕组上。
在一个实施方案中,绝缘层可以以多个步骤配置在电气组件例如导电绕组或者定子线棒上或者在定子片的内部。例如,在第一步中可以将某一厚度的绝缘层配置在电气组件上,而在第二步中将另一厚度的第二层绝缘层配置在第一层之上。在一个实施方案中,第一层绝缘层可具有与第二层绝缘层不同的组成。随后绝缘层可以经过热处理或者电磁辐射例如紫外线固化和/或微波固化以促进更为有效的交联。
在一个示例性实施方案中,包括热固性树脂的绝缘层能够被挤压到一个复杂形状例如定子线棒上。如上所述,所述绝缘层包括热固性聚合物和纳米填料;其中纳米填料包括金属氧化物和平均最大尺寸小于或等于约200纳米的金刚石纳米微粒。所述方法包括将具有一定长度的一个面以上的复杂型材送入冲模的中心孔,其中该中心孔的结构足以允许冲模沿着复杂型材移动或者复杂型材通过冲模向前移动。至少一种包括上述的纳米微粒的热固性材料被挤压通过冲模,以便该热固性材料同时被沉积在复杂型材的每个侧面上。在一个实施方案中,冲模沿着复杂型材的整个长度来回移动。在另一个实施方案中,容许复杂型材的整个长度穿过冲模以便其被绝缘层包覆。
示例性的施涂绝缘层的装置描述于Bolon等人的美国专利5,650,031,该专利的全部内容在此引入作为参考,除了在那些其中在本申请中的术语与引入文献的术语相抵触的情况下,在这种情况下,本申请的术语优于该引用文献的相抵触术语。该装置包括具有一个中心孔的冲模,其中中心孔的结构足够允许冲模沿着具有多侧面和一定长度的复杂型材移动,并且通过该中心孔送入该复杂型材。该装置也包括一个沿着该复杂型材的长度来回移动挤压冲模的设备,和至少一个通过缓冲接头设备连接到冲模的挤压机。
在一个实施方案中,绝缘层中的热固性聚合物可以在约100-约250℃进行固化。在另一个实施方案中,绝缘层可以在约120-约220℃进行固化。在另一个实施方案中,绝缘层可以在约140-约200℃进行固化。在示例性实施方案中,绝缘层可以在约180℃进行固化。
通常理想的是绝缘层具有约25-约300微米(μm)的厚度。在一个实施方案中,理想的是绝缘层具有约30-约275μm的厚度。在另一个实施方案中,理想的是绝缘层具有约40-约250μm的厚度。在另一个实施方案中,理想的是绝缘层具有约50-约225μm的厚度。
厚度为约25-约300μm的绝缘层的优越性在于它具有大于或等于约0.75千伏特(kV)的击穿电压。在一个实施方案中,绝缘层的击穿电压大于或等于约2kV。在另一个实施方案中,绝缘层的击穿电压大于或等于约3kV。在另一个实施方案中,绝缘层的击穿电压大于或等于约4kV。
在一个实施方案中,绝缘层具有大于或等于约1千伏特的电击穿强度,并且绝缘层在5000伏特、3千赫频率外加电压下超过100分钟是耐电晕放电的。在另一个实施方案中,绝缘层具有大于或等于约1千伏特的电击穿强度,并且绝缘层在5000伏特、3千赫频率外加电压下超过200分钟是耐电晕放电的。
绝缘层的优越性在于它可以以约30-约300微米的厚度施涂到电气组件上,该厚度通常小于或等于其它可商购绝缘层的厚度。该绝缘层有利地具有能够经受约250-约1000MPa压力的抗压强度和硬度。施涂该绝缘层也提供了排除通常用于电气装置的带绕云母与聚合物周壁绝缘体或者槽衬材料结合的可能性。
如上所述,在一个有利的实施方案中,绝缘层可以包括在室温下显示出弹性体行为的热固性聚合物。当在室温下显示出弹性体行为的热固性聚合物用于绝缘时,理想的是当在室温下在拉伸试验中测量时绝缘层具有小于或等于约105GPa的弹性模量。这绝缘层具有大于或等于约200%的断裂伸长率。在一个实施方案中,该绝缘层具有大于或等于约300%的断裂伸长率。在另一个实施方案中,该绝缘层具有大于或等于约500%的断裂伸长率。在另一个实施方案中,该绝缘层具有大于或等于约700%的断裂伸长率。
当在大于等于室温(23℃)时受到长达约2000h的拉力或者压应力时,理想的是绝缘层基本上没有显示出蠕变。在一个实施方案中,在室温下受到长达约2000h的大于或等于约100kg/cm2的拉力或者压力时,绝缘层显示出小于它的原始长度10%的蠕变。在另一个实施方案中,在室温下受到长达约2000h的大于或等于约100kg/cm2的拉力或者压力时,绝缘层显示出小于它的原始长度15%的蠕变。
在另一个实施方案中,当在155℃受到1000h每平方英寸10千磅(10kpsi)(约700千克力/平方厘米)的变形力时,该绝缘层显示出小于或等于它的原始长度约10%的蠕变。在另一个实施方案中,当在155℃受到1000h每平方英寸10千磅(10kpsi)(约700千克力/平方厘米)的变形力时,该绝缘层显示出小于或等于约6%的蠕变。在另一个实施方案中,当在155℃受到1000h每平方英寸10千磅(10kpsi)(约700千克力/平方厘米)的变形力时,该绝缘层显示出小于或等于约3%的蠕变。
当在已经运转超过24h的发电机的常见温度下受到常见拉力或者压应力时,包括弹性体的绝缘层基本上未显示出蠕变。绝缘层避免在高温时发生蠕变的能力使其可以有效用于发电机所用的定子线棒和其它设备部件。
虽然已经参考示例性实施方案对本发明进行了描述,但是本领域技术人员应当理解,可以进行各种变化和要素替换,而并不背离本发明的范围。另外,在不背离本发明基本范围的情况下,可以对本发明的特别情况或者材料进行修饰。因此,本发明不拟限于作为实施本发明的最佳方式所公开的特定实施方案,而是包括在权利要求范围中的所有实施方案。
Claims (17)
1.一种制品,其包括:
电气组件;和
配置在该电气组件上的电绝缘层,其中电绝缘层包括热固性聚合物和纳米填料;其中所述纳米填料包括平均最大尺寸小于或等于约200nm的金刚石纳米微粒或者金属氧化物和金刚石纳米微粒的组合。
2.权利要求1的制品,其中电气组件包括铜。
3.权利要求1的制品,其中在室温下在拉伸试验中测得所述绝缘层具有大于或等于约200%的伸长率。
5.权利要求4的制品,其中R1、R2、R3、R4、R5和/或R6为反应性官能团,且包括烷基、芳基、芳烷基、含氟烷基、乙烯基烷基、氨基烷基、乙烯基、环氧基、氢化物、硅烷醇、胺、甲醇、甲基丙烯酸酯、丙烯酸酯、巯基、卤代烷基、卤素、羧酸酯、乙酰氧基、烷氧基或者包括至少一种上述官能团的组合。
6.权利要求1的制品,其中当在室温下受到长达约24小时的大于或等于约100千克/平方厘米的拉力或者压力时,绝缘层显示出小于其原始长度10%的蠕变。
7.权利要求1的制品,其中金属氧化物纳米微粒具有式(II)结构:
(MeO)x(Fe2O3)100-x (II)
其中“MeO”是任何二价的铁氧体形成金属氧化物或者包括两种或多种二价金属氧化物的组合,而且“x”小于50mol%。
8.权利要求7的制品,其中Me表示金属,并且其中该金属是铁、锰、镍、铜、锌、钴、镁、钙或者包括至少一种上述金属的组合。
9.权利要求1的制品,其中金属氧化物纳米微粒具有式Ni0.5Zn0.5Fe2O4。
10.权利要求1的制品,其中金刚石纳米微粒具有小于或等于约50nm的平均粒度。
11.权利要求1的制品,其中电绝缘层具有约25-约300微米的厚度和大于或等于约0.75千伏特的电击穿强度。
12.权利要求1的制品,其中绝缘层具有大于或等于约1千伏特的电击穿强度,并且绝缘层在5000伏特、3千赫频率外加电压下超过100分钟是耐电晕放电的。
13.权利要求12的制品,其中当在155℃受到1000h约700千克力/平方厘米的变形力时,绝缘层显示出小于或等于其原始长度约10%的蠕变。
14.一种制品的制造方法,其包括:
将电绝缘层配置在电气组件上,其中电绝缘层包括热固性聚合物和纳米填料;其中纳米填料包括平均最大尺寸小于或等于约200nm的金刚石纳米微粒或者金属氧化物和金刚石纳米微粒的组合;和
固化热固性聚合物。
15.权利要求14的方法,其中通过浸涂、喷涂、静电涂漆、刷涂、旋涂或者包括至少一种上述方法的组合方法将绝缘层配置在电气组件上。
16.一种方法,其包括:
将定子线棒送入冲模中心孔,其中该中心孔的结构足以允许冲模在定子线棒上作相对运动;
挤压绝缘层进入冲模中以使它同时沉积在定子线棒的每个侧面上;其中绝缘层包括热固性聚合物和纳米填料;其中纳米填料包括平均最大尺寸小于或等于约200nm的金刚石纳米微粒或者金属氧化物和金刚石纳米微粒的组合;和
沿着定子线棒的整个长度来回移动冲模。
17.权利要求16的方法,其中定子线棒为发电机定子线棒。
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Also Published As
Publication number | Publication date |
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US20090182088A9 (en) | 2009-07-16 |
US7875347B2 (en) | 2011-01-25 |
EP1790460A1 (en) | 2007-05-30 |
JP2007181814A (ja) | 2007-07-19 |
US20070117911A1 (en) | 2007-05-24 |
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