CN1989603A - 半导体器件的形成方法及其结构 - Google Patents

半导体器件的形成方法及其结构 Download PDF

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Publication number
CN1989603A
CN1989603A CNA2005800253061A CN200580025306A CN1989603A CN 1989603 A CN1989603 A CN 1989603A CN A2005800253061 A CNA2005800253061 A CN A2005800253061A CN 200580025306 A CN200580025306 A CN 200580025306A CN 1989603 A CN1989603 A CN 1989603A
Authority
CN
China
Prior art keywords
dielectric
dielectric layer
layer
cap
forms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800253061A
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English (en)
Chinese (zh)
Inventor
秉·W·闵
奈杰尔·G·卡韦
文卡塔·R·科拉甘塔
奥马尔·齐亚
锡南·格克泰佩利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1989603A publication Critical patent/CN1989603A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01316—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CNA2005800253061A 2004-07-29 2005-06-16 半导体器件的形成方法及其结构 Pending CN1989603A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/902,218 2004-07-29
US10/902,218 US7144784B2 (en) 2004-07-29 2004-07-29 Method of forming a semiconductor device and structure thereof

Publications (1)

Publication Number Publication Date
CN1989603A true CN1989603A (zh) 2007-06-27

Family

ID=35732844

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800253061A Pending CN1989603A (zh) 2004-07-29 2005-06-16 半导体器件的形成方法及其结构

Country Status (7)

Country Link
US (1) US7144784B2 (enExample)
EP (1) EP1774580A4 (enExample)
JP (1) JP2008508718A (enExample)
KR (1) KR20070050429A (enExample)
CN (1) CN1989603A (enExample)
TW (1) TW200618121A (enExample)
WO (1) WO2006023026A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045847B2 (en) * 2003-08-11 2006-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with high-k gate dielectric
US7183596B2 (en) * 2005-06-22 2007-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Composite gate structure in an integrated circuit
US20070228480A1 (en) * 2006-04-03 2007-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS device having PMOS and NMOS transistors with different gate structures
US7648884B2 (en) 2007-02-28 2010-01-19 Freescale Semiconductor, Inc. Semiconductor device with integrated resistive element and method of making
US7868361B2 (en) 2007-06-21 2011-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with both I/O and core components and method of fabricating same
US7732872B2 (en) * 2007-10-25 2010-06-08 International Business Machines Corporation Integration scheme for multiple metal gate work function structures
US7781321B2 (en) 2008-05-09 2010-08-24 International Business Machines Corporation Electroless metal deposition for dual work function
US7977754B2 (en) 2008-07-25 2011-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Poly resistor and poly eFuse design for replacement gate technology
US20100059823A1 (en) 2008-09-10 2010-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. Resistive device for high-k metal gate technology and method of making
US8163341B2 (en) * 2008-11-19 2012-04-24 Micron Technology, Inc. Methods of forming metal-containing structures, and methods of forming germanium-containing structures
US7994531B2 (en) * 2009-04-02 2011-08-09 Visera Technologies Company Limited White-light light emitting diode chips and fabrication methods thereof
DE102009055437B4 (de) * 2009-12-31 2017-08-10 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Halbleiterwiderstände, die in einem Halbleiterbauelement mit Metallgatestrukturen auf einer geringeren Höhe hergestellt sind und Verfahren zur Herstellung der Halbleiterwiderstände
US8669617B2 (en) * 2010-12-23 2014-03-11 Intel Corporation Multi-gate transistors
US8426263B2 (en) 2011-03-31 2013-04-23 Freescale Semiconductor, Inc. Patterning a gate stack of a non-volatile memory (NVM) with formation of a metal-oxide-semiconductor field effect transistor (MOSFET)
US8415217B2 (en) 2011-03-31 2013-04-09 Freescale Semiconductor, Inc. Patterning a gate stack of a non-volatile memory (NVM) with formation of a capacitor
US8420480B2 (en) 2011-03-31 2013-04-16 Freescale Semiconductor, Inc. Patterning a gate stack of a non-volatile memory (NVM) with formation of a gate edge diode
US12394662B2 (en) * 2023-01-16 2025-08-19 Nanya Technology Corporation Method for patterning active areas comprising different operations in semiconductor structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4324038A (en) * 1980-11-24 1982-04-13 Bell Telephone Laboratories, Incorporated Method of fabricating MOS field effect transistors
JPH04103162A (ja) * 1990-08-23 1992-04-06 Toshiba Corp 絶縁膜を有する半導体装置の製造方法
US6200834B1 (en) * 1999-07-22 2001-03-13 International Business Machines Corporation Process for fabricating two different gate dielectric thicknesses using a polysilicon mask and chemical mechanical polishing (CMP) planarization
JP2002170888A (ja) * 2000-11-30 2002-06-14 Hitachi Ltd 半導体集積回路装置およびその製造方法
US7129531B2 (en) * 2002-08-08 2006-10-31 Ovonyx, Inc. Programmable resistance memory element with titanium rich adhesion layer
US6787421B2 (en) * 2002-08-15 2004-09-07 Freescale Semiconductor, Inc. Method for forming a dual gate oxide device using a metal oxide and resulting device
US6962840B2 (en) * 2002-09-11 2005-11-08 Samsung Electronics Co., Ltd. Method of forming MOS transistor
US6919244B1 (en) * 2004-03-10 2005-07-19 Motorola, Inc. Method of making a semiconductor device, and semiconductor device made thereby

Also Published As

Publication number Publication date
EP1774580A2 (en) 2007-04-18
US20060024893A1 (en) 2006-02-02
WO2006023026A3 (en) 2006-06-29
WO2006023026A2 (en) 2006-03-02
TW200618121A (en) 2006-06-01
US7144784B2 (en) 2006-12-05
JP2008508718A (ja) 2008-03-21
EP1774580A4 (en) 2009-05-06
KR20070050429A (ko) 2007-05-15

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Open date: 20070627