CN1934221A - 用于从离子注入的图案化光致抗蚀剂晶片去除底部抗反射涂层的组合物 - Google Patents

用于从离子注入的图案化光致抗蚀剂晶片去除底部抗反射涂层的组合物 Download PDF

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Publication number
CN1934221A
CN1934221A CNA2005800095180A CN200580009518A CN1934221A CN 1934221 A CN1934221 A CN 1934221A CN A2005800095180 A CNA2005800095180 A CN A2005800095180A CN 200580009518 A CN200580009518 A CN 200580009518A CN 1934221 A CN1934221 A CN 1934221A
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barc
scf
composition
weight
substrate
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English (en)
Chinese (zh)
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迈克尔·B·克赞斯基
托马斯·H·鲍姆
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Advanced Technology Materials Inc
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Advanced Technology Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B6/00—Cleaning by electrostatic means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CNA2005800095180A 2004-03-24 2005-03-14 用于从离子注入的图案化光致抗蚀剂晶片去除底部抗反射涂层的组合物 Pending CN1934221A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/807,858 2004-03-24
US10/807,858 US20050227482A1 (en) 2004-03-24 2004-03-24 Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers

Publications (1)

Publication Number Publication Date
CN1934221A true CN1934221A (zh) 2007-03-21

Family

ID=35061117

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800095180A Pending CN1934221A (zh) 2004-03-24 2005-03-14 用于从离子注入的图案化光致抗蚀剂晶片去除底部抗反射涂层的组合物

Country Status (7)

Country Link
US (1) US20050227482A1 (cg-RX-API-DMAC7.html)
EP (1) EP1733001A4 (cg-RX-API-DMAC7.html)
JP (1) JP2007531006A (cg-RX-API-DMAC7.html)
KR (1) KR20060128037A (cg-RX-API-DMAC7.html)
CN (1) CN1934221A (cg-RX-API-DMAC7.html)
TW (1) TW200535964A (cg-RX-API-DMAC7.html)
WO (1) WO2005104214A2 (cg-RX-API-DMAC7.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102080023A (zh) * 2010-11-22 2011-06-01 青岛大学 一种蜡印织物用高效退蜡清洗液
CN102157357A (zh) * 2011-03-17 2011-08-17 上海集成电路研发中心有限公司 半导体硅片的清洗方法
CN103668210A (zh) * 2012-09-11 2014-03-26 中芯国际集成电路制造(上海)有限公司 选择性晶体硅刻蚀液、晶圆硅片的刻蚀方法及其应用
CN112680288A (zh) * 2020-12-24 2021-04-20 昆山晶科微电子材料有限公司 一种用于清洁半导体芯片洗涤剂及其制备方法
CN112764329A (zh) * 2019-10-21 2021-05-07 昆山晶科微电子材料有限公司 一种超临界co2光刻胶去除液及光刻胶的去除方法

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US20060019850A1 (en) * 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
CN101198416A (zh) * 2005-04-15 2008-06-11 高级技术材料公司 从微电子器件上清除离子注入光致抗蚀剂层的配方
WO2007120259A2 (en) * 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
TWI425324B (zh) * 2005-12-23 2014-02-01 安集微電子有限公司 可去除光阻層之組合物
KR100721207B1 (ko) * 2006-05-18 2007-05-23 주식회사 하이닉스반도체 이온주입된 포토레지스트 제거방법
JP5007089B2 (ja) * 2006-09-08 2012-08-22 富士フイルム株式会社 レジストの剥離方法
US9196270B1 (en) 2006-12-07 2015-11-24 Western Digital (Fremont), Llc Method for providing a magnetoresistive element having small critical dimensions
DE102006062035B4 (de) * 2006-12-29 2013-02-07 Advanced Micro Devices, Inc. Verfahren zum Entfernen von Lackmaterial nach einer Implantation mit hoher Dosis in einem Halbleiterbauelement
US20090029274A1 (en) * 2007-07-25 2009-01-29 3M Innovative Properties Company Method for removing contamination with fluorinated compositions
US8316527B2 (en) * 2008-04-01 2012-11-27 Western Digital (Fremont), Llc Method for providing at least one magnetoresistive device
KR100873370B1 (ko) * 2008-04-02 2008-12-10 주식회사 이생테크 알루미늄 거푸집용 세척제
US8349195B1 (en) 2008-06-27 2013-01-08 Western Digital (Fremont), Llc Method and system for providing a magnetoresistive structure using undercut free mask
US8497233B2 (en) 2009-02-25 2013-07-30 Avantor Performance Materials, Inc. Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers
US8277672B2 (en) * 2009-04-17 2012-10-02 Tiza Lab, LLC Enhanced focused ion beam etching of dielectrics and silicon
WO2012051380A2 (en) 2010-10-13 2012-04-19 Advanced Technology Materials, Inc. Composition for and method of suppressing titanium nitride corrosion
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
WO2014138064A1 (en) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
WO2015017659A1 (en) 2013-07-31 2015-02-05 Advanced Technology Materials, Inc. AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
US10340150B2 (en) 2013-12-16 2019-07-02 Entegris, Inc. Ni:NiGe:Ge selective etch formulations and method of using same
WO2015095726A1 (en) 2013-12-20 2015-06-25 Entegris, Inc. Use of non-oxidizing strong acids for the removal of ion-implanted resist
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
JP6378146B2 (ja) * 2014-10-16 2018-08-22 信越化学工業株式会社 多層膜形成方法及びパターン形成方法
JP6763325B2 (ja) * 2017-03-10 2020-09-30 東京エレクトロン株式会社 半導体装置の製造方法、基板処理装置及び真空処理装置
JP6809315B2 (ja) * 2017-03-15 2021-01-06 東京エレクトロン株式会社 半導体装置の製造方法及び真空処理装置
JP6977474B2 (ja) * 2017-10-23 2021-12-08 東京エレクトロン株式会社 半導体装置の製造方法
CN113549462A (zh) * 2021-06-16 2021-10-26 江阴润玛电子材料股份有限公司 一种微电子用超纯氟化铵蚀刻液及其制备方法

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102080023A (zh) * 2010-11-22 2011-06-01 青岛大学 一种蜡印织物用高效退蜡清洗液
CN102157357A (zh) * 2011-03-17 2011-08-17 上海集成电路研发中心有限公司 半导体硅片的清洗方法
CN102157357B (zh) * 2011-03-17 2016-04-06 上海集成电路研发中心有限公司 半导体硅片的清洗方法
CN103668210A (zh) * 2012-09-11 2014-03-26 中芯国际集成电路制造(上海)有限公司 选择性晶体硅刻蚀液、晶圆硅片的刻蚀方法及其应用
CN112764329A (zh) * 2019-10-21 2021-05-07 昆山晶科微电子材料有限公司 一种超临界co2光刻胶去除液及光刻胶的去除方法
CN112680288A (zh) * 2020-12-24 2021-04-20 昆山晶科微电子材料有限公司 一种用于清洁半导体芯片洗涤剂及其制备方法

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Publication number Publication date
KR20060128037A (ko) 2006-12-13
JP2007531006A (ja) 2007-11-01
WO2005104214A2 (en) 2005-11-03
US20050227482A1 (en) 2005-10-13
WO2005104214A3 (en) 2006-08-10
EP1733001A4 (en) 2008-08-13
TW200535964A (en) 2005-11-01
EP1733001A2 (en) 2006-12-20

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