CN1925327A - 半导体集成电路 - Google Patents
半导体集成电路 Download PDFInfo
- Publication number
- CN1925327A CN1925327A CNA2006101280217A CN200610128021A CN1925327A CN 1925327 A CN1925327 A CN 1925327A CN A2006101280217 A CNA2006101280217 A CN A2006101280217A CN 200610128021 A CN200610128021 A CN 200610128021A CN 1925327 A CN1925327 A CN 1925327A
- Authority
- CN
- China
- Prior art keywords
- circuit
- internal
- supply voltage
- initial setting
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 238000001514 detection method Methods 0.000 claims abstract description 19
- 230000004044 response Effects 0.000 claims abstract description 18
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 11
- 238000007689 inspection Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 15
- 230000006870 function Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008034 disappearance Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
Landscapes
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005251927 | 2005-08-31 | ||
| JP2005251927A JP2007066037A (ja) | 2005-08-31 | 2005-08-31 | 半導体集積回路 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1925327A true CN1925327A (zh) | 2007-03-07 |
Family
ID=37803242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101280217A Pending CN1925327A (zh) | 2005-08-31 | 2006-08-31 | 半导体集成电路 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7378887B2 (enExample) |
| JP (1) | JP2007066037A (enExample) |
| KR (1) | KR20070026199A (enExample) |
| CN (1) | CN1925327A (enExample) |
| TW (1) | TW200721673A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106205673A (zh) * | 2015-05-27 | 2016-12-07 | 爱思开海力士有限公司 | 具有初始化电路的半导体器件及包括其的半导体系统 |
| CN106549661A (zh) * | 2015-09-18 | 2017-03-29 | 阿尔特拉公司 | 用于集成电路中粒子检测与错误校正的系统及方法 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007066037A (ja) * | 2005-08-31 | 2007-03-15 | Renesas Technology Corp | 半導体集積回路 |
| KR100788378B1 (ko) * | 2006-09-13 | 2008-01-02 | 동부일렉트로닉스 주식회사 | 파워 온 회로 |
| JP5151751B2 (ja) * | 2008-07-10 | 2013-02-27 | 株式会社デンソー | 負荷駆動回路 |
| JP5160530B2 (ja) * | 2009-12-17 | 2013-03-13 | 株式会社東芝 | 半導体装置 |
| US8493109B2 (en) | 2010-03-31 | 2013-07-23 | Qualcomm Incorporated | System and method to control a power on reset signal |
| JP5670232B2 (ja) * | 2010-04-16 | 2015-02-18 | ルネサスエレクトロニクス株式会社 | データプロセッサ及びデータ処理システム |
| CN102486936B (zh) * | 2010-12-06 | 2014-10-08 | 上海华虹宏力半导体制造有限公司 | 设置寄存器初始状态的方法 |
| CN105718009B (zh) * | 2016-01-20 | 2018-09-25 | 杭州菲数科技有限公司 | 基于fpga的pcie加速卡及其冷复位方法、电路 |
| JP6820183B2 (ja) * | 2016-10-19 | 2021-01-27 | ローム株式会社 | パワーオンリセット回路、半導体デバイス |
| JP7240900B2 (ja) * | 2019-02-27 | 2023-03-16 | ラピスセミコンダクタ株式会社 | パワーオンクリア回路及び半導体装置 |
| US11519960B2 (en) * | 2020-08-21 | 2022-12-06 | Nxp Usa, Inc. | Circuit configured to determine a test voltage suitable for very low voltage (VLV) testing in an integrated circuit |
| JP2022129021A (ja) * | 2021-02-24 | 2022-09-05 | ミツミ電機株式会社 | リセット用半導体集積回路およびそれを用いた電子回路システム |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5915130A (ja) * | 1982-07-15 | 1984-01-26 | Mitsubishi Heavy Ind Ltd | バケツトラダ−浚渫船 |
| JPS59108126A (ja) * | 1982-12-14 | 1984-06-22 | Canon Inc | 電子機器の制御回路 |
| JPH0962649A (ja) * | 1995-08-25 | 1997-03-07 | Mitsubishi Electric Corp | 信号入出力回路 |
| JP2002111466A (ja) | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体集積回路 |
| JP3977694B2 (ja) * | 2002-06-17 | 2007-09-19 | Nttエレクトロニクス株式会社 | リセット装置 |
| JP2004165732A (ja) | 2002-11-08 | 2004-06-10 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
| JP4294503B2 (ja) * | 2003-07-31 | 2009-07-15 | 富士通マイクロエレクトロニクス株式会社 | 動作モード制御回路、動作モード制御回路を含むマイクロコンピュータ及びそのマイクロコンピュータを利用した制御システム |
| US7187600B2 (en) * | 2004-09-22 | 2007-03-06 | Freescale Semiconductor, Inc. | Method and apparatus for protecting an integrated circuit from erroneous operation |
| TWI244261B (en) * | 2004-11-25 | 2005-11-21 | Sunplus Technology Co Ltd | Power on reset circuit |
| JP2007066037A (ja) * | 2005-08-31 | 2007-03-15 | Renesas Technology Corp | 半導体集積回路 |
-
2005
- 2005-08-31 JP JP2005251927A patent/JP2007066037A/ja active Pending
-
2006
- 2006-07-31 US US11/495,735 patent/US7378887B2/en active Active
- 2006-07-31 TW TW095127965A patent/TW200721673A/zh unknown
- 2006-08-31 CN CNA2006101280217A patent/CN1925327A/zh active Pending
- 2006-08-31 KR KR1020060083564A patent/KR20070026199A/ko not_active Withdrawn
-
2008
- 2008-05-13 US US12/120,090 patent/US20080218224A1/en not_active Abandoned
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106205673A (zh) * | 2015-05-27 | 2016-12-07 | 爱思开海力士有限公司 | 具有初始化电路的半导体器件及包括其的半导体系统 |
| CN106205673B (zh) * | 2015-05-27 | 2021-05-25 | 爱思开海力士有限公司 | 具有初始化电路的半导体器件及包括其的半导体系统 |
| CN106549661A (zh) * | 2015-09-18 | 2017-03-29 | 阿尔特拉公司 | 用于集成电路中粒子检测与错误校正的系统及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7378887B2 (en) | 2008-05-27 |
| TW200721673A (en) | 2007-06-01 |
| US20070046342A1 (en) | 2007-03-01 |
| JP2007066037A (ja) | 2007-03-15 |
| KR20070026199A (ko) | 2007-03-08 |
| US20080218224A1 (en) | 2008-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20070307 |