KR20070026199A - 반도체집적회로 - Google Patents

반도체집적회로 Download PDF

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Publication number
KR20070026199A
KR20070026199A KR1020060083564A KR20060083564A KR20070026199A KR 20070026199 A KR20070026199 A KR 20070026199A KR 1020060083564 A KR1020060083564 A KR 1020060083564A KR 20060083564 A KR20060083564 A KR 20060083564A KR 20070026199 A KR20070026199 A KR 20070026199A
Authority
KR
South Korea
Prior art keywords
circuit
power supply
supply voltage
power
internal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020060083564A
Other languages
English (en)
Korean (ko)
Inventor
나오즈미 모리노
타카히로 이리타
야수토 이가라시
Original Assignee
가부시끼가이샤 르네사스 테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 르네사스 테크놀로지 filed Critical 가부시끼가이샤 르네사스 테크놀로지
Publication of KR20070026199A publication Critical patent/KR20070026199A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied

Landscapes

  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
KR1020060083564A 2005-08-31 2006-08-31 반도체집적회로 Withdrawn KR20070026199A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00251927 2005-08-31
JP2005251927A JP2007066037A (ja) 2005-08-31 2005-08-31 半導体集積回路

Publications (1)

Publication Number Publication Date
KR20070026199A true KR20070026199A (ko) 2007-03-08

Family

ID=37803242

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060083564A Withdrawn KR20070026199A (ko) 2005-08-31 2006-08-31 반도체집적회로

Country Status (5)

Country Link
US (2) US7378887B2 (enExample)
JP (1) JP2007066037A (enExample)
KR (1) KR20070026199A (enExample)
CN (1) CN1925327A (enExample)
TW (1) TW200721673A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007066037A (ja) * 2005-08-31 2007-03-15 Renesas Technology Corp 半導体集積回路
KR100788378B1 (ko) * 2006-09-13 2008-01-02 동부일렉트로닉스 주식회사 파워 온 회로
JP5151751B2 (ja) * 2008-07-10 2013-02-27 株式会社デンソー 負荷駆動回路
JP5160530B2 (ja) * 2009-12-17 2013-03-13 株式会社東芝 半導体装置
US8493109B2 (en) 2010-03-31 2013-07-23 Qualcomm Incorporated System and method to control a power on reset signal
JP5670232B2 (ja) * 2010-04-16 2015-02-18 ルネサスエレクトロニクス株式会社 データプロセッサ及びデータ処理システム
CN102486936B (zh) * 2010-12-06 2014-10-08 上海华虹宏力半导体制造有限公司 设置寄存器初始状态的方法
KR20160139495A (ko) * 2015-05-27 2016-12-07 에스케이하이닉스 주식회사 초기화 동작을 수행하는 반도체장치 및 반도체시스템
US20170082689A1 (en) * 2015-09-18 2017-03-23 Altera Corporation Systems and methods for particle detection and error correction in an integrated circuit
CN105718009B (zh) * 2016-01-20 2018-09-25 杭州菲数科技有限公司 基于fpga的pcie加速卡及其冷复位方法、电路
JP6820183B2 (ja) * 2016-10-19 2021-01-27 ローム株式会社 パワーオンリセット回路、半導体デバイス
JP7240900B2 (ja) * 2019-02-27 2023-03-16 ラピスセミコンダクタ株式会社 パワーオンクリア回路及び半導体装置
US11519960B2 (en) * 2020-08-21 2022-12-06 Nxp Usa, Inc. Circuit configured to determine a test voltage suitable for very low voltage (VLV) testing in an integrated circuit
JP2022129021A (ja) * 2021-02-24 2022-09-05 ミツミ電機株式会社 リセット用半導体集積回路およびそれを用いた電子回路システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915130A (ja) * 1982-07-15 1984-01-26 Mitsubishi Heavy Ind Ltd バケツトラダ−浚渫船
JPS59108126A (ja) * 1982-12-14 1984-06-22 Canon Inc 電子機器の制御回路
JPH0962649A (ja) * 1995-08-25 1997-03-07 Mitsubishi Electric Corp 信号入出力回路
JP2002111466A (ja) 2000-09-28 2002-04-12 Toshiba Corp 半導体集積回路
JP3977694B2 (ja) * 2002-06-17 2007-09-19 Ｎｔｔエレクトロニクス株式会社 リセット装置
JP2004165732A (ja) 2002-11-08 2004-06-10 Matsushita Electric Ind Co Ltd 半導体集積回路
JP4294503B2 (ja) * 2003-07-31 2009-07-15 富士通マイクロエレクトロニクス株式会社 動作モード制御回路、動作モード制御回路を含むマイクロコンピュータ及びそのマイクロコンピュータを利用した制御システム
US7187600B2 (en) * 2004-09-22 2007-03-06 Freescale Semiconductor, Inc. Method and apparatus for protecting an integrated circuit from erroneous operation
TWI244261B (en) * 2004-11-25 2005-11-21 Sunplus Technology Co Ltd Power on reset circuit
JP2007066037A (ja) * 2005-08-31 2007-03-15 Renesas Technology Corp 半導体集積回路

Also Published As

Publication number Publication date
US7378887B2 (en) 2008-05-27
TW200721673A (en) 2007-06-01
CN1925327A (zh) 2007-03-07
US20070046342A1 (en) 2007-03-01
JP2007066037A (ja) 2007-03-15
US20080218224A1 (en) 2008-09-11

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20060831

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid