CN1922710B - 光电子倍增器 - Google Patents

光电子倍增器 Download PDF

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Publication number
CN1922710B
CN1922710B CN2005800051680A CN200580005168A CN1922710B CN 1922710 B CN1922710 B CN 1922710B CN 2005800051680 A CN2005800051680 A CN 2005800051680A CN 200580005168 A CN200580005168 A CN 200580005168A CN 1922710 B CN1922710 B CN 1922710B
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CN
China
Prior art keywords
photomultiplier
electron
anode
wall
wall portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2005800051680A
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English (en)
Chinese (zh)
Other versions
CN1922710A (zh
Inventor
久嵨浩之
下井英树
影山明广
井上圭祐
伊藤益保
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of CN1922710A publication Critical patent/CN1922710A/zh
Application granted granted Critical
Publication of CN1922710B publication Critical patent/CN1922710B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/08—Cathode arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/18—Electrode arrangements using essentially more than one dynode
    • H01J43/24—Dynodes having potential gradient along their surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/26—Sealing together parts of vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Tubes For Measurement (AREA)
  • Measurement Of Radiation (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
CN2005800051680A 2004-02-17 2005-02-16 光电子倍增器 Expired - Lifetime CN1922710B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP040405/2004 2004-02-17
JP2004040405 2004-02-17
PCT/JP2005/002302 WO2005078759A1 (ja) 2004-02-17 2005-02-16 光電子増倍管

Publications (2)

Publication Number Publication Date
CN1922710A CN1922710A (zh) 2007-02-28
CN1922710B true CN1922710B (zh) 2010-10-13

Family

ID=34857885

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2005800051680A Expired - Lifetime CN1922710B (zh) 2004-02-17 2005-02-16 光电子倍增器
CNB2005800047030A Expired - Lifetime CN100555553C (zh) 2004-02-17 2005-02-16 光电倍增器及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2005800047030A Expired - Lifetime CN100555553C (zh) 2004-02-17 2005-02-16 光电倍增器及其制造方法

Country Status (5)

Country Link
US (6) US7977878B2 (enExample)
EP (3) EP1717842A4 (enExample)
JP (3) JP5000137B2 (enExample)
CN (2) CN1922710B (enExample)
WO (2) WO2005078759A1 (enExample)

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JP4708117B2 (ja) * 2005-08-10 2011-06-22 浜松ホトニクス株式会社 光電子増倍管
JP4708118B2 (ja) * 2005-08-10 2011-06-22 浜松ホトニクス株式会社 光電子増倍管
JP4819437B2 (ja) 2005-08-12 2011-11-24 浜松ホトニクス株式会社 光電子増倍管
JP4331147B2 (ja) * 2005-08-12 2009-09-16 浜松ホトニクス株式会社 光電子増倍管
US7867807B2 (en) * 2006-03-29 2011-01-11 Hamamatsu Photonics K.K. Method for manufacturing photoelectric converting device
US7403589B1 (en) * 2007-03-27 2008-07-22 General Electric Company Photon counting CT detector using solid-state photomultiplier and scintillator
JP5290805B2 (ja) * 2009-02-25 2013-09-18 浜松ホトニクス株式会社 光電子増倍管
JP5290804B2 (ja) * 2009-02-25 2013-09-18 浜松ホトニクス株式会社 光電子増倍管
US7973272B2 (en) 2009-03-09 2011-07-05 Bae Systems Information And Electronic Systems Integration, Inc. Interface techniques for coupling a microchannel plate to a readout circuit
US7999216B2 (en) * 2009-03-09 2011-08-16 Bae Systems Information And Electronic Systems Integration Inc. Selective channel charging for microchannel plate
JP6151505B2 (ja) 2012-10-30 2017-06-21 浜松ホトニクス株式会社 光検出ユニットおよびその製造方法
KR101395102B1 (ko) 2013-02-14 2014-05-16 한국과학기술원 Ｐｃｂ 기판을 이용한 실리콘 광전자증배관의 패키징 방법
CN103456594B (zh) * 2013-08-02 2015-08-26 西安交通大学 一种提高光电倍增器光阴极光利用率的优化设计方法
EP3021351A1 (de) * 2014-11-17 2016-05-18 Bayer Technology Services GmbH Sekundärelektronenvervielfacher und verfahren zum herstellen eines solchen
JP6474281B2 (ja) 2015-03-03 2019-02-27 浜松ホトニクス株式会社 電子増倍体、光電子増倍管、及び光電子増倍器
EP4368886A3 (en) 2017-05-30 2024-06-19 Carrier Corporation Semiconductor film and phototube light detector
JP6395906B1 (ja) * 2017-06-30 2018-09-26 浜松ホトニクス株式会社 電子増倍体
JP6431574B1 (ja) 2017-07-12 2018-11-28 浜松ホトニクス株式会社 電子管
US10163599B1 (en) * 2018-01-03 2018-12-25 Eagle Technology, Llc Electron multiplier for MEMs light detection device
US10734184B1 (en) * 2019-06-21 2020-08-04 Elbit Systems Of America, Llc Wafer scale image intensifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244922A (en) * 1962-11-05 1966-04-05 Itt Electron multiplier having undulated passage with semiconductive secondary emissive coating
US3374380A (en) * 1965-11-10 1968-03-19 Bendix Corp Apparatus for suppression of ion feedback in electron multipliers
US5568013A (en) * 1994-07-29 1996-10-22 Center For Advanced Fiberoptic Applications Micro-fabricated electron multipliers

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Publication number Priority date Publication date Assignee Title
GB503211A (en) 1936-07-04 1939-04-03 Zeiss Ikon Ag Improvements in or relating to secondary electron multipliers
US3225239A (en) * 1960-11-15 1965-12-21 Bendix Corp Electron multiplier
BE639094A (enExample) * 1963-10-23
JPS4813864B1 (enExample) * 1967-10-13 1973-05-01
JPS5016145B1 (enExample) * 1968-05-31 1975-06-11
US3563657A (en) 1968-08-09 1971-02-16 Univ Iowa State Res Found Inc Direct-reading spectrometer system and method for narrow range measurements
FR2184516B1 (enExample) * 1972-05-19 1978-09-01 Labo Electronique Physique
GB1434053A (en) * 1973-04-06 1976-04-28 Mullard Ltd Electron multipliers
JPS5110897B2 (enExample) 1973-06-14 1976-04-07
US4149106A (en) * 1977-08-08 1979-04-10 Rca Corporation Electron multiplier output electron optics
JPS61130568A (ja) 1984-11-28 1986-06-18 株式会社日本水中作業 液中におけるコンクリ−ト構築物等の解体方法
JPH0378905A (ja) 1989-08-22 1991-04-04 Matsushita Electric Works Ltd 棚下用照明器具
FR2676862B1 (fr) * 1991-05-21 1997-01-03 Commissariat Energie Atomique Structure multiplicatrice d'electrons en ceramique notamment pour photomultiplicateur et son procede de fabrication.
JPH04359855A (ja) 1991-06-06 1992-12-14 Hamamatsu Photonics Kk 二次電子増倍装置
JP3078905B2 (ja) 1991-12-26 2000-08-21 浜松ホトニクス株式会社 電子増倍器を備えた電子管
US5264693A (en) 1992-07-01 1993-11-23 The United States Of America As Represented By The Secretary Of The Navy Microelectronic photomultiplier device with integrated circuitry
US5493111A (en) 1993-07-30 1996-02-20 Litton Systems, Inc. Photomultiplier having cascaded microchannel plates, and method for fabrication
DE4429925C1 (de) * 1994-08-23 1995-11-23 Roentdek Handels Gmbh Verfahren und Detektoreinrichtung zur elektronischen positionsbezogenen Erfassung von Strahlung
AU5098798A (en) * 1996-10-30 1998-05-22 Nanosystems, Inc. Microdynode integrated electron multiplier
WO1999063574A1 (fr) * 1998-06-01 1999-12-09 Hamamatsu Photonics K. K. Photomultiplicateur et capteur de rayonnement
JP2936098B1 (ja) 1998-07-23 1999-08-23 岡谷電機産業株式会社 紫外線センサ及びその製造方法
JP2000113851A (ja) * 1998-10-01 2000-04-21 New Japan Radio Co Ltd 電子増倍管およびマルチチャンネルプレートならびにそれらの製造方法
US6492657B1 (en) * 2000-01-27 2002-12-10 Burle Technologies, Inc. Integrated semiconductor microchannel plate and planar diode electron flux amplifier and collector
GB2369720B (en) * 2000-12-01 2005-02-16 Electron Tubes Ltd Photomultiplier
JPWO2003005408A1 (ja) * 2001-07-05 2004-10-28 浜松ホトニクス株式会社 電子管及びその製造方法
US7049747B1 (en) 2003-06-26 2006-05-23 Massachusetts Institute Of Technology Fully-integrated in-plane micro-photomultiplier
GB2409927B (en) 2004-01-09 2006-09-27 Microsaic Systems Ltd Micro-engineered electron multipliers
JP4359855B2 (ja) 2007-07-09 2009-11-11 Ｓｍｃ株式会社 電磁弁駆動回路及び電磁弁
JP5144410B2 (ja) 2008-07-14 2013-02-13 株式会社日本自動車部品総合研究所 燃料電池の金属製セパレータの腐食検知装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244922A (en) * 1962-11-05 1966-04-05 Itt Electron multiplier having undulated passage with semiconductive secondary emissive coating
US3374380A (en) * 1965-11-10 1968-03-19 Bendix Corp Apparatus for suppression of ion feedback in electron multipliers
US5568013A (en) * 1994-07-29 1996-10-22 Center For Advanced Fiberoptic Applications Micro-fabricated electron multipliers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开平5-144410A 1993.06.11

Also Published As

Publication number Publication date
US20140111085A1 (en) 2014-04-24
EP2993685A1 (en) 2016-03-09
JPWO2005078760A1 (ja) 2007-10-18
JP5254400B2 (ja) 2013-08-07
EP1717842A4 (en) 2008-06-18
WO2005078760A1 (ja) 2005-08-25
EP1717843B1 (en) 2015-12-23
US20150371835A1 (en) 2015-12-24
US20120274204A1 (en) 2012-11-01
US7977878B2 (en) 2011-07-12
CN1922710A (zh) 2007-02-28
US8643258B2 (en) 2014-02-04
WO2005078759A1 (ja) 2005-08-25
US20070194713A1 (en) 2007-08-23
JP2011187454A (ja) 2011-09-22
JP5000137B2 (ja) 2012-08-15
US20110221336A1 (en) 2011-09-15
JP4762719B2 (ja) 2011-08-31
US9147559B2 (en) 2015-09-29
EP1717843A1 (en) 2006-11-02
EP1717843A4 (en) 2008-12-17
JPWO2005078759A1 (ja) 2007-10-18
US7602122B2 (en) 2009-10-13
CN1918686A (zh) 2007-02-21
CN100555553C (zh) 2009-10-28
US8242694B2 (en) 2012-08-14
EP1717842A1 (en) 2006-11-02
US20080018246A1 (en) 2008-01-24
US9460899B2 (en) 2016-10-04

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C06 Publication
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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CI01 Publication of corrected invention patent application

Correction item: Applicant

Correct: HAMAMATSU PHOTONICS Kabushiki Kaisha

False: HAMAMATSU PHOTONICS Kabushiki Kaisha

Number: 9

Page: 907

Volume: 23

CI02 Correction of invention patent application

Correction item: Applicant

Correct: HAMAMATSU PHOTONICS Kabushiki Kaisha

False: HAMAMATSU PHOTONICS Kabushiki Kaisha

Number: 9

Page: The title page

Volume: 23

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: HAMAMATSU PHOTONICS K. K. TO: HAMAMATSU PHOTONICS CO., LTD.

ERR Gazette correction

Free format text: CORRECT: APPLICANT; FROM: HAMAMATSU PHOTONICS K. K. TO: HAMAMATSU PHOTONICS CO., LTD.

C14 Grant of patent or utility model
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CX01 Expiry of patent term

Granted publication date: 20101013

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