JP5290804B2 - 光電子増倍管 - Google Patents
光電子増倍管 Download PDFInfo
- Publication number
- JP5290804B2 JP5290804B2 JP2009042391A JP2009042391A JP5290804B2 JP 5290804 B2 JP5290804 B2 JP 5290804B2 JP 2009042391 A JP2009042391 A JP 2009042391A JP 2009042391 A JP2009042391 A JP 2009042391A JP 5290804 B2 JP5290804 B2 JP 5290804B2
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- JP
- Japan
- Prior art keywords
- end side
- electron
- groove
- photomultiplier tube
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 60
- 239000011810 insulating material Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
- H01J43/243—Dynodes consisting of a piling-up of channel-type dynode plates
Landscapes
- Electron Tubes For Measurement (AREA)
Description
Claims (5)
- 絶縁材料からなる平面が形成された基板を有する筐体と、
前記基板の前記平面上の一端側から他端側に向けて、順に離間して配列された第1段〜第N段(Nは2以上の整数)の電子増倍部と、
前記一端側に前記電子増倍部と離間して設けられ、外部からの入射光を光電子に変換して、前記光電子を放出する光電面と、
前記他端側に前記電子増倍部と離間して設けられ、前記電子増倍部によって増倍された電子を信号として取り出す陽極部と、
を備える光電子増倍管であって、
前記基板の前記平面上には、隣接する2つの前記電子増倍部間に、表面が絶縁材料からなる溝部が形成され、
前記第1段〜第N段の電子増倍部は、前記基板の前記溝部に隣接し、絶縁材料からなる凸部上に固定されている、
ことを特徴とする光電子増倍管。 - 前記溝部は、第K−1段目の電子増倍部の前記他端側の縁部から第K段目(Kは2以上N以下の整数)の電子増倍部の前記一端側の縁部で挟まれる範囲にわたって形成されている、
ことを特徴とする請求項1記載の光電子増倍管。 - 前記溝部は、前記第K段目の電子増倍部の前記一端側の縁部よりも他端側に拡がって形成されている、
ことを特徴とする請求項2記載の光電子増倍管。 - 前記溝部は、前記第K−1段目の電子増倍部の前記他端側の縁部よりも一端側に拡がって形成されている、
ことを特徴とする請求項2又は3記載の光電子増倍管。 - 前記基板の前記平面上には、前記凸部の端部において隣接する前記溝部の間を連通する溝部がさらに形成されている、
ことを特徴とする請求項1〜4のいずれか1項に記載の光電子増倍管。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009042391A JP5290804B2 (ja) | 2009-02-25 | 2009-02-25 | 光電子増倍管 |
US12/710,714 US8188656B2 (en) | 2009-02-25 | 2010-02-23 | Photomultiplier tube |
CN201010123812.7A CN101814413B (zh) | 2009-02-25 | 2010-02-25 | 光电倍增管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009042391A JP5290804B2 (ja) | 2009-02-25 | 2009-02-25 | 光電子増倍管 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010198910A JP2010198910A (ja) | 2010-09-09 |
JP5290804B2 true JP5290804B2 (ja) | 2013-09-18 |
Family
ID=42621629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009042391A Active JP5290804B2 (ja) | 2009-02-25 | 2009-02-25 | 光電子増倍管 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8188656B2 (ja) |
JP (1) | JP5290804B2 (ja) |
CN (1) | CN101814413B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8492694B2 (en) | 2010-10-14 | 2013-07-23 | Hamamatsu Photonics K.K. | Photomultiplier tube having a plurality of stages of dynodes with recessed surfaces |
US8587196B2 (en) | 2010-10-14 | 2013-11-19 | Hamamatsu Photonics K.K. | Photomultiplier tube |
US8354791B2 (en) | 2010-10-14 | 2013-01-15 | Hamamatsu Photonics K.K. | Photomultiplier tube |
EP2442348B1 (en) * | 2010-10-18 | 2013-07-31 | Hamamatsu Photonics K.K. | Photomultiplier tube |
EP2442349B1 (en) * | 2010-10-18 | 2017-04-05 | Hamamatsu Photonics K.K. | Photomultiplier tube |
EP2442347B1 (en) * | 2010-10-18 | 2017-04-12 | Hamamatsu Photonics K.K. | Photomultiplier tube |
CN102468109B (zh) * | 2010-10-29 | 2015-09-02 | 浜松光子学株式会社 | 光电倍增管 |
CN102468110B (zh) * | 2010-10-29 | 2016-04-06 | 浜松光子学株式会社 | 光电倍增管 |
KR101357364B1 (ko) * | 2011-06-03 | 2014-02-03 | 하마마츠 포토닉스 가부시키가이샤 | 전자 증배부 및 그것을 포함하는 광전자 증배관 |
JP6208951B2 (ja) * | 2013-02-21 | 2017-10-04 | 浜松ホトニクス株式会社 | 光検出ユニット |
EP3408861A4 (en) * | 2016-01-29 | 2019-08-28 | Shenzhen Genorivision Technology Co., Ltd. | PHOTOVREW MAKER AND METHOD FOR THE PRODUCTION THEREOF |
JP6738244B2 (ja) * | 2016-08-31 | 2020-08-12 | 浜松ホトニクス株式会社 | 電子増倍体の製造方法及び電子増倍体 |
CN112255664B (zh) * | 2020-10-23 | 2022-11-18 | 中国工程物理研究院激光聚变研究中心 | 微通道型快中子图像探测器 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264693A (en) * | 1992-07-01 | 1993-11-23 | The United States Of America As Represented By The Secretary Of The Navy | Microelectronic photomultiplier device with integrated circuitry |
US5568013A (en) | 1994-07-29 | 1996-10-22 | Center For Advanced Fiberoptic Applications | Micro-fabricated electron multipliers |
JP3626312B2 (ja) * | 1997-01-27 | 2005-03-09 | 浜松ホトニクス株式会社 | 電子管 |
JP2001196023A (ja) * | 2000-01-06 | 2001-07-19 | Hamamatsu Photonics Kk | 光電子増倍管 |
JP3954478B2 (ja) * | 2002-11-06 | 2007-08-08 | 浜松ホトニクス株式会社 | 半導体光電陰極、及びそれを用いた光電管 |
US7049747B1 (en) | 2003-06-26 | 2006-05-23 | Massachusetts Institute Of Technology | Fully-integrated in-plane micro-photomultiplier |
GB2409927B (en) | 2004-01-09 | 2006-09-27 | Microsaic Systems Ltd | Micro-engineered electron multipliers |
CN1922710B (zh) * | 2004-02-17 | 2010-10-13 | 浜松光子学株式会社 | 光电子倍增器 |
JP4708118B2 (ja) * | 2005-08-10 | 2011-06-22 | 浜松ホトニクス株式会社 | 光電子増倍管 |
JP4819437B2 (ja) * | 2005-08-12 | 2011-11-24 | 浜松ホトニクス株式会社 | 光電子増倍管 |
-
2009
- 2009-02-25 JP JP2009042391A patent/JP5290804B2/ja active Active
-
2010
- 2010-02-23 US US12/710,714 patent/US8188656B2/en active Active
- 2010-02-25 CN CN201010123812.7A patent/CN101814413B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN101814413A (zh) | 2010-08-25 |
JP2010198910A (ja) | 2010-09-09 |
US8188656B2 (en) | 2012-05-29 |
US20100213838A1 (en) | 2010-08-26 |
CN101814413B (zh) | 2014-04-09 |
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