CN1905132A - 用于Ⅲ族氮化物基器件的硅碳锗(SiCGe)衬底 - Google Patents
用于Ⅲ族氮化物基器件的硅碳锗(SiCGe)衬底 Download PDFInfo
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Abstract
本发明提供了用于由III族氮化物材料系统形成的电子器件的衬底,该衬底包含硅碳层以及在该硅碳层上的硅碳锗层,该硅碳层和硅碳锗层形成了用于由III族氮化物材料系统形成的器件的衬底。
Description
技术领域
本发明涉及电子器件和光学器件的加工制造。
背景技术
碳化硅(SiC)被用作各种电子和光学器件的衬底。很多电子和光学器件是由一种或更多种III族元素和氮(通常称为III族氮化物)组成的层形成的。一种III族氮化物是氮化镓。通常用氮化镓材料系统形成的器件包括例如晶体管和发光器件。氮化镓材料系统包括用铝、硼、镓和铟与氮的各种组合形成的合金。这包括各种二元端点(binary endpoints)和三元端点(ternary endpoints),例如氮化铝(AlN)、氮化镓(GaN)、氮化铟镓(GaInN)等。碳化硅因其导电性而成为用氮化镓材料系统形成的器件的理想衬底。然而,尽管碳化硅具有与用氮化镓材料系统形成的材料的晶体结构相似的晶体结构时,碳化硅的晶格常数小于用氮化镓材料系统形成的材料的晶格常数。当氮化镓材料生长得比临界厚度更厚时,碳化硅与用氮化镓材料系统形成的材料之间的晶格失配导致在氮化镓材料中形成位错缺陷。这些位错使氮化镓基器件的性能和可靠性变差。
遗憾的是,能呈现合适的电气特性并且具有与用氮化镓材料系统形成的材料的晶格常数相似的晶格常数的衬底还未被开发出来。因此,为了在碳化硅衬底上用氮化镓材料系统形成器件,必须开发例如外延横向过生长(称为“ELOG”)的精密生长方法来降低缺陷密度。即使用例如ELOG的技术进行生长之后,碳化硅上生长的氮化镓中的缺陷密度仍为约106/cm2。能与用氮化镓基材料形成的材料更紧密地匹配的衬底可使氮化镓基材料在低位错密度的条件下生长并且改善器件的性能。
发明内容
本发明的实施方式提供了用于由III族氮化物材料系统形成的电子器件的衬底,包含硅碳层以及在该硅碳层上的硅碳锗层,该硅碳层和硅碳锗层构成了由III族氮化物材料系统形成的器件的衬底。
本发明的实施方式还包括形成用于由III族氮化物材料系统形成的电子器件的衬底的方法。该方法包括形成硅碳层、在该硅碳层上形成硅碳锗层以及直接在该硅碳锗层上用III族氮化物材料系统形成电子器件。
附图说明
参照附图可以更好地理解本发明。图中组件并不一定按照比例,而是注重于清楚地阐明本发明的原理。此外,在这些图中,类似的附图标记指示各图中的相应部分。
图1为根据本发明的一种实施方式在硅碳锗衬底上形成的光电器件的示意图。
图2为在图1的衬底上形成的示例性氮化镓基激光器的示意图。
图3为根据本发明在衬底上形成器件的示例性方法的流程图。
具体实施方式
降低衬底与氮化镓基材料之间的晶格失配的一种方法是向碳化硅衬底中添加锗。向碳化硅衬底添加锗会增大衬底的晶格常数。SiC:Ge合金的发展存在技术挑战,目前只能在碳化硅晶体中引入少量的锗。X射线衍射数据表明,SiC:Ge的晶格常数与碳化硅相比确实增加了。SiC:Ge的薄层已被引入电子器件以形成碳化硅异质结构器件。然而,至今为止还未实现用锗来形成与用III族氮化物特别是氮化镓材料系统形成的器件具有更紧密的晶格匹配的衬底。
尽管本文在形成用于氮化镓基器件的衬底的部分将对用于III族氮化物基器件的硅碳锗衬底的实例进行描述,但是在硅碳锗衬底上也可形成具有与氮化镓基器件的层的晶格常数相似的晶格常数的其他材料。
图1为根据本发明的一种实施方式在硅碳锗衬底上形成的光电器件的示意图。光电器件100可以是例如发光器件(例如激光器和发光二极管),或可以是用III族氮化物(特别是氮化镓)材料系统形成的任何其他电子器件。电子器件100包含由硅和碳组成的第一衬底层102。在一种实施方式中,第一衬底层102由碳化硅(SiC)组成。第一衬底层102的平面内(a轴)晶格常数为3.086埃()。在第一衬底层102上形成硅碳锗的第二衬底层104。在一种实施方式中,第二衬底层104是碳化硅锗(SiC:Ge),其组成为(Si0.5-xC0.5-y)Gex+y,其中0≤x≤0.5且0≤y≤0.5。
在一种具体实施方式中,第二衬底层104的组成为(Si0.5-xC0.5-y)Gex+y,其中锗含量在约5%至约40%的范围内变化。选择x和y的值以为后续的器件层提供所需的晶格常数。在一种实施方式中,第二衬底层104的组成为Si0.35C0.5Ge0.15。然而,第二衬底层104的组成范围可在Si0.45C0.5Ge0.05(含)与Si0.10C0.5Ge0.4(含)之间。由于硅、碳和锗的键长,锗倾向于取代硅,但一部分锗还可以取代碳。如果氮化镓器件随后在第二衬底层104上生长,第二衬底层104应当以(Si0.5-xC0.5-y)Gex+y的组成形成以得到3.19的平面内晶格常数。如果氮化铝器件随后在第二衬底层104上生长,第二衬底层104应当以(Si0.5-xC0.5-y)Gex+y的组成形成以得到3.11的平面内晶格常数。
第一衬底层102和第二衬底层104构成衬底110。第二衬底层104的晶格常数接近于氮化镓和在氮化镓材料系统中形成的其他材料的晶格常数。在一种实施方式中,用氮化镓材料系统形成的光电器件是在衬底110上并且直接在第二衬底层104上形成的。这在图中表示为作为第二衬底层104上的层106的氮化镓器件。通常,器件由多个层组成,这些层具有不同的硼、铝、镓、铟和氮组成。在此实施例中,氮化镓层106的晶格常数为3.19,与第二衬底层104的晶格常数紧密匹配。与氮化镓层106直接在碳化硅层102上生长的厚度相比,层104与106的材料之间的紧密晶格匹配使得氮化镓材料的层106(以及未示出的后续层)可以无位错地生长至更大的厚度。这允许在衬底110上形成光学品质高的氮化镓基器件。
在出现位错之前,可在第二衬底层104上形成的层106的厚度大于可直接在碳化硅层102上形成的厚度。以此方式,可以形成具有高光学品质的氮化镓基器件。含约5%至约40%锗的第二衬底层104与氮化镓材料层106之间的晶格失配明显低于第一衬底层102与氮化镓材料层106之间的晶格失配。第二衬底层104与氮化镓材料层106之间晶格匹配紧密,使材料层106在不形成位错的条件下生长的厚度明显大于层106直接在第一衬底层102上生长的厚度。
图2为在图1的衬底110上形成的示例性氮化镓基激光器结构的示意图。在衬底110上形成导电缓冲层202。在一种实施方式中,导电缓冲层202可在相对较低的生长温度下由氮化镓形成。在缓冲层202上形成n型氮化镓层204。在一种实施方式中,氮化镓层204的厚度约为1微米(μm)。在氮化镓层204上由氮化镓铝形成n型覆层(cladding layer)206。覆层206的厚度约为0.4μm并且该层是用AlxGa1-xN形成的,其中x=0.12。在覆层206上形成波导层208。波导层208的厚度约为0.1μm并且该层是用AlxGa1-xN形成的,其中x=0.06。在波导层208上形成包括氮化镓铟量子阱层和氮化镓阻挡层的交替层的有源区(active region)210。有源区可包含一个或更多个量子阱,在本例中,包含8个量子阱。
在有源区210上形成波导层212。波导层212的厚度约为0.1μm并且该层是用AlxGa1-xN形成的,其中x=0.06。在波导层212上由氮化镓铝形成p型覆层214。覆层214的厚度约为0.4μm并且该层是用AlxGa1-xN形成的,其中x=0.12。在覆层214上形成p型氮化镓层216。在一种实施方式中,氮化镓层216的厚度约为0.1μm。在衬底110上形成n型触点218,并在p型氮化镓层216上形成p型触点222。
图3为根据本发明在衬底上形成器件的示例性方法的流程图。在方框302中,由硅碳形成第一衬底层102。在一种示例性实施方式中,第一衬底层102是碳化硅(SiC)。在方框304中,由硅碳锗形成第二衬底层104。在一种示例性实施方式中,第二衬底层104是碳化硅锗(SiC:Ge),其组成为(Si0.5-xC0.5-y)Gex+y,其中0≤x≤0.5且0≤y≤0.5,且其晶格常数为3.19。第一衬底层102和第二衬底层104形成了衬底110。在方框306中,在衬底110上形成(具体地是在第二衬底层104上直接形成)III族氮化物特别是氮化镓基器件。氮化镓基器件的层的晶格常数与第二衬底层104的SiC:Ge材料的晶格常数紧密匹配。第二衬底层104的SiC:Ge材料与氮化镓基器件的材料之间的晶格匹配允许在衬底110上形成光学品质高的氮化镓基光电器件。
本说明书通过实施方式对本发明进行了详细描述。但应当理解,本发明的范围由所附权利要求所定义,而不限于所述的具体实施方式。
Claims (20)
1.形成用于由III族氮化物材料系统形成的电子器件的硅碳锗衬底的方法,包括:
形成硅碳层;
在所述硅碳层上形成硅碳锗层;以及
在所述硅碳锗层上直接形成含III族氮化物的电子器件。
2.如权利要求1的方法,其中所述硅碳锗的组成为(Si0.5-xC0.5-y)Gex+y,其中0≤x≤0.5且0≤y≤0.5。
3.如权利要求2的方法,其中所述硅碳锗的组成为Si0.35C0.5Ge0.15。
4.如权利要求2的方法,其中相对于所述硅碳与氮化镓的晶格匹配,所述硅碳锗层与氮化镓的晶格匹配更紧密。
5.如权利要求2的方法,其中所述硅碳锗层被形成为具有3.19埃()的晶格常数。
6.如权利要求2的方法,其中所述硅碳锗层被形成为具有3.11埃()的晶格常数。
7.如权利要求2的方法,其中所述硅碳锗的组成为(Si0.5-xC0.5-y)Gex+y,其中0.1≤x≤0.40且0.0≤y≤0.40。
8.用于由III族氮化物材料系统形成的电子器件的衬底,包含:
硅碳层;和
在所述硅碳层上的硅碳锗层,所述硅碳层和所述硅碳锗层形成用于由III族氮化物材料系统形成的器件的衬底。
9.如权利要求8的衬底,还包含在所述硅碳锗层上直接形成的由氮化镓材料系统形成的电子器件。
10.如权利要求9的衬底,其中所述电子器件是光电器件。
11.如权利要求9的衬底,其中所述硅碳锗层包含(Si0.5-xC0.5-y)Gex+y,其中0≤x≤0.5且0≤y≤0.5。
12.如权利要求11的衬底,其中所述硅碳锗层包含Si0.35C0.5Ge0.15。
13.如权利要求11的衬底,其中相对于所述硅碳层与氮化镓的晶格匹配,所述硅碳锗层与氮化镓的晶格匹配更紧密。
14.如权利要求11的衬底,其中所述硅碳锗层的晶格常数为3.19埃()。
15.如权利要求11的衬底,其中所述硅碳锗层的晶格常数为3.11埃()。
16.用于由III族氮化物材料系统形成的电子器件的硅碳锗衬底,包含:
硅碳层;
在所述硅碳层上的硅碳锗层,所述硅碳锗层包括(Si0.5-xC0.5-y)Gex+y,其中0≤x≤0.5且0≤y≤0.5;和
直接在所述硅碳锗层上的含镓和氮的电子器件。
17.如权利要求16的衬底,其中所述硅碳锗的组成在Si0.45C0.5Ge0.05与Si0.10C0.5Ge0.4之间,并包括这两个端点。
18.如权利要求17的衬底,其中相对于所述硅碳与氮化镓的晶格匹配,所述硅碳锗层与氮化镓的晶格匹配更紧密。
19.如权利要求16的衬底,其中所述硅碳锗层被形成为具有3.19埃()的晶格常数。
20.如权利要求16的衬底,其中所述硅碳锗层被形成为具有3.11埃()的晶格常数。
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CN102714144A (zh) * | 2010-01-15 | 2012-10-03 | 住友化学株式会社 | 半导体基板、电子器件及半导体基板的制造方法 |
CN103646858A (zh) * | 2013-12-03 | 2014-03-19 | 中国电子科技集团公司第十三研究所 | 采用SiGeC缓冲层在Si衬底上生长GaN的方法 |
CN105568385A (zh) * | 2016-01-22 | 2016-05-11 | 山东大学 | 一种掺锗SiC体单晶材料的生长方法 |
CN111856626A (zh) * | 2020-07-22 | 2020-10-30 | 中国建筑材料科学研究总院有限公司 | 硅掺杂碳化锗膜、光学薄膜及其制备方法和应用 |
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US7399692B2 (en) * | 2005-10-03 | 2008-07-15 | International Rectifier Corporation | III-nitride semiconductor fabrication |
CN102449785A (zh) | 2009-06-05 | 2012-05-09 | 住友化学株式会社 | 光器件、半导体基板、光器件的制造方法、以及半导体基板的制造方法 |
US10507469B2 (en) * | 2013-01-18 | 2019-12-17 | Kurt M. Schie | Wood chipper |
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US5592501A (en) * | 1994-09-20 | 1997-01-07 | Cree Research, Inc. | Low-strain laser structures with group III nitride active layers |
JP3409958B2 (ja) * | 1995-12-15 | 2003-05-26 | 株式会社東芝 | 半導体発光素子 |
JP3822318B2 (ja) * | 1997-07-17 | 2006-09-20 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP4166885B2 (ja) * | 1998-05-18 | 2008-10-15 | 富士通株式会社 | 光半導体装置およびその製造方法 |
US20030132433A1 (en) * | 2002-01-15 | 2003-07-17 | Piner Edwin L. | Semiconductor structures including a gallium nitride material component and a silicon germanium component |
EP1962340A3 (en) * | 2004-11-09 | 2009-12-23 | S.O.I. TEC Silicon | Method for manufacturing compound material wafers |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102714144A (zh) * | 2010-01-15 | 2012-10-03 | 住友化学株式会社 | 半导体基板、电子器件及半导体基板的制造方法 |
CN103646858A (zh) * | 2013-12-03 | 2014-03-19 | 中国电子科技集团公司第十三研究所 | 采用SiGeC缓冲层在Si衬底上生长GaN的方法 |
CN105568385A (zh) * | 2016-01-22 | 2016-05-11 | 山东大学 | 一种掺锗SiC体单晶材料的生长方法 |
CN111856626A (zh) * | 2020-07-22 | 2020-10-30 | 中国建筑材料科学研究总院有限公司 | 硅掺杂碳化锗膜、光学薄膜及其制备方法和应用 |
CN111856626B (zh) * | 2020-07-22 | 2021-11-26 | 中国建筑材料科学研究总院有限公司 | 硅掺杂碳化锗膜、光学薄膜及其制备方法和应用 |
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