CN100350638C - 氮化物半导体及其制备方法 - Google Patents

氮化物半导体及其制备方法 Download PDF

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CN100350638C
CN100350638C CNB038132346A CN03813234A CN100350638C CN 100350638 C CN100350638 C CN 100350638C CN B038132346 A CNB038132346 A CN B038132346A CN 03813234 A CN03813234 A CN 03813234A CN 100350638 C CN100350638 C CN 100350638C
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李昔宪
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Suzhou Lekin Semiconductor Co Ltd
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Abstract

本发明涉及氮化物半导体，更具体地，涉及GaN基氮化物半导体及其制备方法。根据本发明的氮化物半导体包含衬底；按以下结构的任一种形成的GaN基过渡层：三层结构的AlyInxGa1-(x+y)N/InxGa1-xN/GaN，其中0≤x≤1且0≤y≤1；两层结构的InxGa1-xN/GaN，其中0≤x≤1；和InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；和GaN基单晶层。

Description

氮化物半导体及其制备方法
技术领域
本发明涉及氮化物半导体，更具体地涉及GaN基氮化物半导体及其制备方法。
背景技术
一般来说，GaN基氮化物半导体应用于作为高速开关和高功率器件的电子器件中，例如蓝/绿LED、MESFET、HEMT等的光学元件。具体地，蓝/绿LED正处于已经进行大批量生产并且全球的规模指数增长的状态。
这样的GaN基氮化物半导体通常在蓝宝石或SiC衬底上生长。在低生长温度下，在蓝宝石衬底或SiC衬底上生长作为过渡层的AlxGa1-xN的多晶层。此后，在高温下，在该过渡层上生长良好质量的GaN基单晶层，从而制备GaN基氮化物半导体。
其间，为了改善GaN基氮化物半导体的性能并保证其可靠性，研究了新型的过渡层，并且非常活跃地研究了GaN基氮化物半导体的制备方法。
发明内容
本发明的一个目的是提供氮化物半导体及其制备方法，该方法能够减少由于GaN基单晶层与衬底之间的热膨胀系数差和它们之间的晶格常数差所导致的晶体缺陷，并增强GaN基氮化物半导体的结晶性，从而改善氮化物半导体的性能并保证可靠性。
本发明的另一个目的是提供可以改善其性能并保证可靠性的氮化物半导体发光器件(LED)。
为了实现这些和其他优点，根据本发明的目的，正如所实施和概括描述的那样，氮化物半导体包括：衬底；在衬底上形成的GaN基过渡层，所述过渡层是选自以下结构的任一种：三层结构的AlyInxGa1-(x+y)N/InxGa1-xN/GaN，其中0≤x≤1且0≤y≤1；两层结构的InxGa1-xN/GaN，其中0≤x≤1；和InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；以及在GaN基过渡层上形成的GaN基单晶层。
在本发明的一个方面中，提供了一种制备氮化物半导体的方法。该方法包括以下步骤：(a)在衬底上生长GaN基过渡层，所述过渡层选自以下结构中的任一种：三层结构的AlyInxGa1-(x+y)N/InxGa1-xN/GaN，其中0≤x≤1且0≤y≤1；两层结构的InxGa1-xN/GaN，其中0≤x≤1；和InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；和(b)在所生长的GaN基过渡层上生长GaN基单晶层。
在本发明的另一个方面中，氮化物半导体发光器件包括：衬底；在该衬底上形成的GaN基过渡层，所述过渡层选自以下结构的任一种：三层结构的AlyInxGa1-(x+y)N/InxGa1-xN/GaN，其中0≤x≤1且0≤y≤1；两层结构的InxGa1-xN/GaN，其中0≤x≤1；和InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；在GaN基过渡层上形成的n-GaN层的第一电极层；在第一电极层上形成的有源层；和在有源层上形成的p-GaN层的第二电极层。
附图说明
图1(a)和1(b)是说明通过根据本发明的氮化物半导体制备方法形成的氮化物半导体的第一实施方案的结构的示意图。
图2(a)和2(b)是说明通过根据本发明的氮化物半导体制备方法形成的氮化物半导体的第二实施方案的结构的示意图。
图3(a)和3(b)是说明通过根据本发明的氮化物半导体制备方法形成的氮化物半导体的第三实施方案的结构的示意图。
图4是示意说明根据本发明的氮化物半导体制备方法形成的氮化物半导体LED的结构的截面图。
具体实施方式
现在详细说明本发明的优选实施方案，其实例在附图中说明。
图1(a)和1(b)是说明通过根据本发明的氮化物半导体制备方法形成的氮化物半导体的第一实施方案的结构的示意图。
如图1(a)所示，根据本发明的氮化物半导体包括衬底(即蓝宝石衬底或SiC衬底)101和以AlyInxGa1-(x+y)N/InxGa1-xN/GaN的三层结构102-104在衬底101上形成的GaN基过渡层110，其中0≤x≤1和0≤y≤1。GaN基单晶层120形成在GaN基过渡层110上。这里，GaN基单晶层120包括铟掺杂的GaN层105、未掺杂的GaN层106和硅掺杂的n-GaN层107。
如图1(a)和1(b)所示，在GaN基单晶层120中，在形成铟掺杂的GaN层105之后，可以在铟掺杂的GaN层105上形成未掺杂的GaN层106。另外，也可以在形成未掺杂的GaN层106之后，在未掺杂的GaN层106上形成铟掺杂的GaN层105。
氮化物半导体的GaN基过渡层110在MOCVD设备中在500-800℃的温度下以50-800的厚度生长。通过在提供载气H2和N2的同时引入TMGa、TMIn和TMAl源和高纯(＞99.9995％)NH3气体来生长GaN基过渡层110。这里，TMGa、TMIn和TMAl源的流量为5-300μmol/min，生长压力为100-700托。
GaN基过渡层110可以有效地消除由于衬底101与GaN基过渡层110之间的热膨胀系数差和在衬底101与GaN基过渡层110之间的晶格常数差引起的应力，所述过渡层与AlyGa1-yN层102和InxGa1-xN层103结合。因此，它有助于GaN晶种生长并且当GaN晶种从位于GaN基过渡层110上部的GaN层104向上生长时被结合。诸如在衬底101与GaN基过渡层110之间的边界处产生的位错等晶体缺陷减少，因此可以获得良好的GaN基氮化物半导体。
根据本发明的氮化物半导体的GaN基晶体层120使用MOCVD设备并供给TMGa和TMIn源在900-1100℃的温度下生长。SiH4气体用作掺杂源。这里，n-GaN层的电极107具有1×1018/cm3或更大的载流子浓度。当引入TMGa和TMIn源时，其压力为100-700托，其流量为0.1-700μmol/min。
同时，图2(a)和图2(b)是说明通过根据本发明的氮化物半导体制备方法形成的氮化物半导体的第二实施方案的结构的示意图。
如图2(a)所示，根据本发明的氮化物半导体包括衬底(即蓝宝石衬底或SiC衬底)201和以InxGa1-xN/GaN的两层结构202和203在衬底201上形成的GaN基过渡层210，其中0≤x≤1。GaN基单晶层220形成在GaN基过渡层210上。这里，GaN基单晶层220包括铟掺杂的GaN层204、未掺杂的GaN层205和硅掺杂的n-GaN层206。
GaN基过渡层210有助于GaN晶种生长，并且当GaN晶种从位于GaN基过渡层210上部的GaN层203向上生长时被结合。诸如在衬底201与GaN基过渡层210之间的边界处产生的位错等晶体缺陷减少，因此可以获得良好的GaN基氮化物半导体。
如图2(a)和2(b)所示，在GaN基过渡层210上层叠并形成的GaN基单晶层220中，在形成铟掺杂的GaN层204之后，可以在铟掺杂的GaN层204上形成未掺杂的GaN层205。另外，也可以在形成未掺杂的GaN层205之后，在未掺杂的GaN层205上形成铟掺杂的GaN层204。
由于具有上述结构的氮化物半导体用与第一实施方案中所述的氮化物半导体制备方法相似的方法生长，这里将省略该制备方法的描述。
同时，图3(a)和图3(b)是说明通过根据本发明的氮化物半导体制备方法形成的氮化物半导体的第三实施方案的结构的示意图。
如图3(a)所示，根据本发明的氮化物半导体包括衬底(即蓝宝石衬底或SiC衬底)301和以InxGa1-xN/GaN层302的超晶格结构在衬底301上形成的GaN基过渡层，其中0≤x≤1。GaN基单晶层320形成在作为GaN基过渡层的InxGa1-xN/GaN层302上。这里，GaN基单晶层320包括未掺杂的GaN层303、铟掺杂的GaN层304和硅掺杂的n-GaN层306。
InxGa1-xN/GaN层302以小于30的厚度交替生长，因此形成具有超晶格结构的GaN基过渡层。由于GaN基过渡层与衬底301之间的热膨胀系数差及其晶格常数差所引起的边界缺陷减少，因此可以获得良好的GaN基氮化物半导体。
如图3(a)和3(b)所示，在作为GaN基过渡层的InxGa1-xN/GaN层302上层叠并形成的GaN基单晶层320中，在形成铟掺杂的GaN层304之后，可以在铟掺杂的GaN层304上形成未掺杂的GaN层303。另外，也可以在形成未掺杂的GaN层303之后，在未掺杂的GaN层303上形成铟掺杂的GaN层304。
由于具有上述结构的氮化物半导体用与第一实施方案中所述的氮化物半导体制备方法相似的方法生长，这里将省略该制备方法的描述。
同时，图4是示意说明用根据本发明的氮化物半导体制备方法制备的氮化物半导体发光器件的结构的截面图。
根据本发明的氮化物半导体发光器件包括衬底401、在衬底401上形成的GaN基过渡层402、在GaN基过渡层402上形成的n-GaN层的第一电极层405、在第一电极层上形成的有源层420和在有源层420上形成的p-GaN层的第二电极层410。
这里，以选自以下结构的任一种的形式形成GaN基过渡层402：三层结构的AlyInxGa1-(x+y)N/InxGa1-xN/GaN，其中0≤x≤1且0≤y≤1；两层结构的InxGa1-xN/GaN，其中0≤x≤1；和InxGa1-xN/GaN的超晶格结构，其中0≤x≤1。
换言之，根据本发明的氮化物半导体发光元件通过以下过程形成：在衬底(即蓝宝石衬底或SiC衬底)401上生长GaN基氮化物半导体作为GaN基过渡层402、形成硅掺杂的n-GaN层405作为第一电极层、和形成Mg掺杂的p-GaN层410作为第二电极层。InGaN/GaN多量子阱结构的有源层420以位于n-GaN层的第一电极层405与p-GaN层的第二电极层410之间的夹层耦合结构形成。
这里，有源层420可以由InxGa1-xN阱层406、InxGa1-xN/GaN阻挡层407、InxGa1-xN阱层408和InxGa1-xN/GaN阻挡层409组成。未掺杂的GaN层403或铟掺杂的GaN层404可以形成在GaN基过渡层402与n-GaN层的第一电极层405之间。
工业实用性
如上所述，根据本发明的氮化物半导体及其制备方法可以减少由于GaN基单晶层与衬底之间的热膨胀系数差及其晶格常数差所引起的晶体缺陷，并且能够增强GaN基氮化物半导体的结晶性，从而改善氮化物半导体的性能并保证可靠性。

Claims (11)

1.一种氮化物半导体，包括：
衬底；
在所述衬底上形成的GaN基过渡层，该过渡层为InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；和
在所述GaN基过渡层上形成的GaN基单晶层。
2.一种氮化物半导体，包括：
衬底；
在所述衬底上形成的GaN基过渡层，该过渡层选自以下结构中的任一种：三层结构的AlyInxGa1-(x+y)N/InxGa1-xN/GaN，其中0≤x≤1且0≤y≤1；两层结构的InxGa1-xN/GaN，其中0≤x≤1；和InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；和
在所述GaN基过渡层上形成的GaN基单晶层，
其中，所述GaN基单晶层包含：
铟掺杂的GaN层；
在铟掺杂的GaN层上形成的未掺杂的GaN层；和
在未掺杂的GaN层上形成的硅掺杂的n-GaN层。
3.一种氮化物半导体，包括：
衬底；
在所述衬底上形成的GaN基过渡层，该过渡层选自以下结构中的任一种：三层结构的AlyInxGa1-(x+y)N/InxGa1-xN/GaN，其中0≤x≤1且0≤y≤1；两层结构的InxGa1-xN/GaN，其中0≤x≤1；和InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；
在所述GaN基过渡层上形成的GaN基单晶层，
其中，所述GaN基单晶层包含：
未掺杂的GaN层；
在未掺杂的GaN层上形成的铟掺杂的GaN层；和
在铟掺杂的GaN层上形成的硅掺杂的n-GaN层。
4.一种氮化物半导体发光器件，包含：
衬底；
在所述衬底上形成的GaN基过渡层，该过渡层为InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；
在所述GaN基过渡层上形成的n-GaN层的第一电极层；
在所述第一电极层上形成的有源层；和
在所述有源层上形成的p-GaN层的第二电极层。
5.一种氮化物半导体发光器件，包括：
衬底；
在所述衬底上形成的GaN基过渡层，该过渡层选自以下结构中的任一种：三层结构的AlyInxGa1-(x+y)N/InxGa1-xN/GaN，其中0≤x≤1且0≤y≤1；两层结构的InxGa1-xN/GaN，其中0≤x≤1；和InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；
在所述GaN基过渡层上形成的n-GaN层的第一电极层；
在所述第一电极层上形成的有源层；
在所述有源层上形成的p-GaN层的第二电极层；
在所述GaN基过渡层上形成的铟掺杂的GaN层；和
在所述铟掺杂的GaN层上形成的未掺杂的GaN层。
6.一种氮化物半导体发光器件，包括：
衬底；
在所述衬底上形成的GaN基过渡层，该过渡层选自以下结构中的任一种：三层结构的AlyInxGa1-(x+y)N/InxGa1-xN/GaN，其中0≤x≤1且0≤y≤1；两层结构的InxGa1-xN/GaN，其中0≤x≤1；和InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；
在所述GaN基过渡层上形成的n-GaN层的第一电极层；
在所述第一电极层上形成的有源层；
在所述有源层上形成的p-GaN层的第二电极层；
在所述GaN基过渡层上形成的未掺杂的GaN层；和
在所述未掺杂的GaN层上形成的铟掺杂的GaN层。
7.一种用于制备氮化物半导体的方法，该方法包括以下步骤：
(a)在衬底上生长GaN基过渡层，该过渡层为InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；和
(b)在所生长的GaN基过渡层上生长GaN基单晶层。
8.权利要求7的方法，其中所述GaN基过渡层在MOCVD设备中通过在提供H2和N2载气的同时引入TMGa、TMIn和TMAl源以及NH3气体，在500-800℃的温度下以50-800的厚度生长。
9.权利要求8的方法，其中所述GaN基过渡层在TMGa、TMIn和TMAl源的流量为5-300μmol/min、生长压力为100-700托的条件下生长。
10.一种用于制备氮化物半导体的方法，该方法包括以下步骤：
(a)在衬底上生长GaN基过渡层，该过渡层选自以下结构的任一种：三层结构的AlyInxGa1-(x+y)N/InxGa1-xN/GaN，其中0≤x≤1且0≤y≤1；两层结构的InxGa1-xN/GaN，其中0≤x≤1；和InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；和
(b)在所生长的GaN基过渡层上生长GaN基单晶层，
其中步骤(b)包括以下步骤：
生长铟掺杂的GaN层；
在所述铟掺杂的GaN层上生长未掺杂的GaN层；和
在所述未掺杂的GaN层上生长硅掺杂的n-GaN层。
11.一种用于制备氮化物半导体的方法，该方法包括以下步骤：
(a)在衬底上生长GaN基过渡层，该过渡层选自以下结构的任一种：三层结构的AlyInxGa1-(x+y)N/InxGa1-xN/GaN，其中0≤x≤1且0≤y≤1；两层结构的InxGa1-xN/GaN，其中0≤x≤1；和InxGa1-xN/GaN的超晶格结构，其中0≤x≤1；和
(b)在所生长的GaN基过渡层上生长GaN基单晶层，
其中步骤(b)包括以下步骤：
生长未掺杂的GaN层；
在所述未掺杂的GaN层上生长铟掺杂的GaN层；和
在所述铟掺杂的GaN层上生长硅掺杂的n-GaN层。
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