TW200742099A - Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device - Google Patents

Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device

Info

Publication number
TW200742099A
TW200742099A TW095125838A TW95125838A TW200742099A TW 200742099 A TW200742099 A TW 200742099A TW 095125838 A TW095125838 A TW 095125838A TW 95125838 A TW95125838 A TW 95125838A TW 200742099 A TW200742099 A TW 200742099A
Authority
TW
Taiwan
Prior art keywords
silicon carbon
substrate
group iii
iii nitride
sicge
Prior art date
Application number
TW095125838A
Other languages
English (en)
Inventor
Virginia M Robbins
Original Assignee
Avago Tech Ecbu Ip Sg Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Tech Ecbu Ip Sg Pte Ltd filed Critical Avago Tech Ecbu Ip Sg Pte Ltd
Publication of TW200742099A publication Critical patent/TW200742099A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0211—Substrates made of ternary or quaternary compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laminated Bodies (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095125838A 2005-07-26 2006-07-14 Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device TW200742099A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/189,286 US20070023761A1 (en) 2005-07-26 2005-07-26 Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device

Publications (1)

Publication Number Publication Date
TW200742099A true TW200742099A (en) 2007-11-01

Family

ID=37137522

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125838A TW200742099A (en) 2005-07-26 2006-07-14 Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device

Country Status (6)

Country Link
US (1) US20070023761A1 (zh)
EP (1) EP1748497A3 (zh)
JP (1) JP2007036255A (zh)
KR (1) KR20070014054A (zh)
CN (1) CN1905132B (zh)
TW (1) TW200742099A (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7399692B2 (en) * 2005-10-03 2008-07-15 International Rectifier Corporation III-nitride semiconductor fabrication
KR20120035144A (ko) 2009-06-05 2012-04-13 스미또모 가가꾸 가부시키가이샤 광 디바이스, 반도체 기판, 광 디바이스의 제조 방법 및 반도체 기판의 제조 방법
JP2011166129A (ja) * 2010-01-15 2011-08-25 Sumitomo Chemical Co Ltd 半導体基板、電子デバイス及び半導体基板の製造方法
US10507469B2 (en) * 2013-01-18 2019-12-17 Kurt M. Schie Wood chipper
CN103646858A (zh) * 2013-12-03 2014-03-19 中国电子科技集团公司第十三研究所 采用SiGeC缓冲层在Si衬底上生长GaN的方法
CN105568385A (zh) * 2016-01-22 2016-05-11 山东大学 一种掺锗SiC体单晶材料的生长方法
CN111856626B (zh) * 2020-07-22 2021-11-26 中国建筑材料科学研究总院有限公司 硅掺杂碳化锗膜、光学薄膜及其制备方法和应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
JP3409958B2 (ja) * 1995-12-15 2003-05-26 株式会社東芝 半導体発光素子
JP3822318B2 (ja) * 1997-07-17 2006-09-20 株式会社東芝 半導体発光素子及びその製造方法
JP4166885B2 (ja) * 1998-05-18 2008-10-15 富士通株式会社 光半導体装置およびその製造方法
US20030132433A1 (en) * 2002-01-15 2003-07-17 Piner Edwin L. Semiconductor structures including a gallium nitride material component and a silicon germanium component
ATE420461T1 (de) * 2004-11-09 2009-01-15 Soitec Silicon On Insulator Verfahren zum herstellen von zusammengesetzten wafern

Also Published As

Publication number Publication date
EP1748497A3 (en) 2008-05-14
EP1748497A2 (en) 2007-01-31
CN1905132B (zh) 2010-09-29
CN1905132A (zh) 2007-01-31
JP2007036255A (ja) 2007-02-08
US20070023761A1 (en) 2007-02-01
KR20070014054A (ko) 2007-01-31

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