CN1861837A - 用于沉积多晶硅的cvd装置 - Google Patents

用于沉积多晶硅的cvd装置 Download PDF

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Publication number
CN1861837A
CN1861837A CNA2006100785248A CN200610078524A CN1861837A CN 1861837 A CN1861837 A CN 1861837A CN A2006100785248 A CNA2006100785248 A CN A2006100785248A CN 200610078524 A CN200610078524 A CN 200610078524A CN 1861837 A CN1861837 A CN 1861837A
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CN
China
Prior art keywords
chamber
vapor deposition
chemical vapor
deposition apparatus
purge gas
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Pending
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CNA2006100785248A
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English (en)
Chinese (zh)
Inventor
金明洙
金汉基
郑锡宪
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Samsung Display Co Ltd
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Samsung SDI Co Ltd
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Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Publication of CN1861837A publication Critical patent/CN1861837A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CNA2006100785248A 2005-05-12 2006-05-08 用于沉积多晶硅的cvd装置 Pending CN1861837A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050039926A KR100688837B1 (ko) 2005-05-12 2005-05-12 결정질 실리콘 증착을 위한 화학기상증착장치
KR1020050039926 2005-05-12

Publications (1)

Publication Number Publication Date
CN1861837A true CN1861837A (zh) 2006-11-15

Family

ID=37389361

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006100785248A Pending CN1861837A (zh) 2005-05-12 2006-05-08 用于沉积多晶硅的cvd装置

Country Status (3)

Country Link
JP (1) JP2006319327A (ja)
KR (1) KR100688837B1 (ja)
CN (1) CN1861837A (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102140678A (zh) * 2009-12-17 2011-08-03 维塞尔·雷万卡 生产均匀多晶硅棒的方法、装置和cvd-西门子系统
CN102356452A (zh) * 2009-07-08 2012-02-15 三菱重工业株式会社 真空处理装置
CN101295639B (zh) * 2007-04-23 2012-07-18 三洋电机株式会社 半导体膜的制造方法和光敏元件的制造方法
CN103203590A (zh) * 2012-01-17 2013-07-17 游利 一种新的电介质刻蚀机气体分配器加工工艺
WO2013159642A1 (zh) * 2012-04-23 2013-10-31 光达光电设备科技（嘉兴）有限公司 用于化学气相沉积工艺的喷淋头和改善工艺均匀性的方法
CN104164657A (zh) * 2014-08-04 2014-11-26 东莞职业技术学院 形成光电器件薄膜的真空设备
CN105793959A (zh) * 2013-12-06 2016-07-20 灿美工程股份有限公司 衬底处理设备
CN110277495A (zh) * 2018-03-15 2019-09-24 三星电子株式会社 制造半导体装置的设备和方法
CN110678573A (zh) * 2017-01-16 2020-01-10 持续能源解决有限公司 用于防止在直接接触式热交换器中的凝华作用的方法及装置
CN111411348A (zh) * 2020-04-13 2020-07-14 沈阳拓荆科技有限公司 Pe-cvd反应器喷淋板的加热系统

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4948021B2 (ja) * 2006-04-13 2012-06-06 株式会社アルバック 触媒体化学気相成長装置
WO2008096981A1 (en) * 2007-02-06 2008-08-14 Sosul Co., Ltd. Apparatus for forming a layer
DE102009023467B4 (de) * 2009-06-02 2011-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage und -verfahren
US8968473B2 (en) 2009-09-21 2015-03-03 Silevo, Inc. Stackable multi-port gas nozzles
US9441295B2 (en) 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
US9240513B2 (en) 2010-05-14 2016-01-19 Solarcity Corporation Dynamic support system for quartz process chamber
JP5800969B1 (ja) * 2014-08-27 2015-10-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム、記録媒体
JP2017518626A (ja) 2015-02-17 2017-07-06 ソーラーシティ コーポレーション 太陽電池の製造歩留まりを向上させる方法及びシステム
US20160359080A1 (en) 2015-06-07 2016-12-08 Solarcity Corporation System, method and apparatus for chemical vapor deposition
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148332A (ja) * 1995-11-16 1997-06-06 Ricoh Co Ltd 微小粒子配列装置
JP3868324B2 (ja) * 2002-04-15 2007-01-17 三菱電機株式会社 シリコン窒化膜の成膜方法、成膜装置、及び半導体装置の製造方法
JP3894862B2 (ja) * 2002-05-29 2007-03-22 京セラ株式会社 Ｃａｔ−ＰＥＣＶＤ法
KR100503425B1 (ko) * 2003-02-04 2005-07-22 한국전자통신연구원 유기물 박막 및 유기물 소자를 위한 콜드월 형태의 저진공유기물 기상 증착장치와 증착방법

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101295639B (zh) * 2007-04-23 2012-07-18 三洋电机株式会社 半导体膜的制造方法和光敏元件的制造方法
CN102356452A (zh) * 2009-07-08 2012-02-15 三菱重工业株式会社 真空处理装置
CN102140678A (zh) * 2009-12-17 2011-08-03 维塞尔·雷万卡 生产均匀多晶硅棒的方法、装置和cvd-西门子系统
CN102140678B (zh) * 2009-12-17 2015-12-09 维塞尔·雷万卡 生产均匀多晶硅棒的方法、装置和cvd-西门子系统
CN103203590B (zh) * 2012-01-17 2015-12-02 游利 一种新的电介质刻蚀机气体分配器加工工艺
CN103203590A (zh) * 2012-01-17 2013-07-17 游利 一种新的电介质刻蚀机气体分配器加工工艺
WO2013159642A1 (zh) * 2012-04-23 2013-10-31 光达光电设备科技（嘉兴）有限公司 用于化学气相沉积工艺的喷淋头和改善工艺均匀性的方法
CN105793959A (zh) * 2013-12-06 2016-07-20 灿美工程股份有限公司 衬底处理设备
CN105793959B (zh) * 2013-12-06 2019-03-26 灿美工程股份有限公司 衬底处理设备
CN104164657A (zh) * 2014-08-04 2014-11-26 东莞职业技术学院 形成光电器件薄膜的真空设备
CN110678573A (zh) * 2017-01-16 2020-01-10 持续能源解决有限公司 用于防止在直接接触式热交换器中的凝华作用的方法及装置
CN110277495A (zh) * 2018-03-15 2019-09-24 三星电子株式会社 制造半导体装置的设备和方法
CN110277495B (zh) * 2018-03-15 2024-05-17 三星电子株式会社 制造半导体装置的设备和方法
CN111411348A (zh) * 2020-04-13 2020-07-14 沈阳拓荆科技有限公司 Pe-cvd反应器喷淋板的加热系统
CN111411348B (zh) * 2020-04-13 2022-06-21 拓荆科技股份有限公司 Pe-cvd反应器喷淋板的加热系统

Also Published As

Publication number Publication date
KR100688837B1 (ko) 2007-03-02
KR20060117134A (ko) 2006-11-16
JP2006319327A (ja) 2006-11-24

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Effective date of registration: 20090116

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