CN1853279A - Pin光电检测器 - Google Patents
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Abstract
一种PIN光电检测器包括:第一半导体接触层,面积大于第一半导体接触层的半导体吸收层,位于第一半导体接触层与半导体吸收层之间的半导体钝化层,和第二半导体接触层。半导体吸收层和半导体钝化层被定位于第一与第二半导体接触层之间。
Description
相关申请
本申请要求2003年5月20日提出的美国临时申请No.60/467,399的权益,在此编入其全部内容供参考。
技术领域
本发明一般涉及光电检测领域;更具体地说,涉及用半导体光电检测器检测光子。
背景技术
由于已知光子和电子之间有相互作用,所以近年来在光电检测领域,尤其是在利用半导体材料的光电检测器领域,已取得进展。一种叫作PIN光电检测器的基于半导体的光电检测器,包括若干适合吸收和钝化等不同用途的半导体材料。
对于许多类型的PIN光电检测器来说,光电检测器的灵敏度和可靠性会随时间推移而下降。此外,光电检测器会经受疲劳、磨损和破损。所以,希望能有一种光电检测器,在其使用寿命中具有高灵敏度、高带宽、低暗电流,以及易制造。
发明内容
本发明提供一种PIN光电检测器,它包括第一半导体接触层;半导体吸收层,其面积大于第一半导体接触层;半导体钝化层,其面积大于第一半导体接触层,被定位于第一半导体接触层与吸收层之间;和第二半导体接触层。如图1所示,半导体吸收层和钝化层被定位于第一与第二半导体接触层之间。
当光电检测器工作时,半导体吸收层中心附近的电场大于半导体吸收层边缘附近的电场,如图2所示;由第一小半导体接触层的面积确定光电二极管的电容。在某些实施例中,光电检测器可以具有大于20GHz的3dB带宽,光电二极管具有暗电流特性:暗电流特性在一段长时期(例如20年)中相对于初始值保持基本恒定。
本发明的实施例可以具有一个或多个下述优点。配置具有增加的使用寿命和改进的温度老化特征。第一半导体接触层限定一种小型台面(mini-mesa)结构,该结构有利于一种增强的吸收高性能、高带宽PIN。此外,因为不需要用P型扩散步骤去形成局部P型接触,所以可简化小型台面PIN光电检测器的制作。
从下面的描述和权利要求书可看到其它的特点和优点。
附图说明
图1是按照本发明一个实施例的PIN结构的侧视图;
图2是曲线图,说明横过图1的PIN结构的吸收层的电场分布;
图3是曲线图,说明一组具有恒定偏压的以125℃老化的常规台面器件的暗电流特性;
图4是曲线图,说明一组具有恒定偏压的以175℃老化的图1的PIN结构的暗电流特性;
图5是按照本发明的PIN结构的一个替代实施例的侧视图。
具体实施方式
现在参考诸图,说明一个光电检测器,尤其是体现本发明原则的小型台面PIN光电检测器;并用10标志它。PIN光电检测器的主要组件包括一个n+型接触层12,一个p+金属接触层14,和一个p+型小型台面16。InGaAs吸收层22设在p+小台面16和n+接触层12之间。一对带隙渐变层20邻接于InGaAs吸收层22。还把一个未故意掺杂的(nid)钝化层18安置在InGaAs吸收层22与p+型小型台面16之间。在一些特殊实施例中,把一个钝化层24安置在PIN光电检测器10的外表面上。钝化层24可以由下述材料构成:BCB(苯并环丁烯),二氧化硅,氮化硅,或聚酰亚胺。一个n型金属接触层26收集电子,被设置在n+型接触层12上。
因为小型台面16具有减小的面积,所以在大的n型台面的边缘处的电场被明显减小,从而任何表面状态或其它表面缺陷的有害效应也被减小。此外,因为这些表面的电流也被减小,所以这些边界的充电或界面状态也被减小。
对于具有30μm小型台面16和50μm n型外台面的PIN光电检测器,图2示意地示出吸收层22上的电场分布。在外台面的边缘处,电场下降到接近零,这表示PIN光电检测器10的钝化特征。
对于雪崩光电二极管(APD)、未掺杂的PIN或少掺杂的PIN之类的光电检测器,上述效应明显地延长其使用寿命和改善其老化特征,从而优于常规的台面光电检测器件。
图3和4说明在常规器件的器件老化特征(图3)与PIN光电检测器10的器件老化特征(图4)之间的比较。对一组在恒定偏压下用较低老化温度125℃老化的常规台面器件,图3示出其暗电流特性。如图3所示,仅在1500小时中,暗电流就从其初始值增加20倍,说明这些台面器件迅速退化。
与此对比,对一组在恒定偏压下用高得多的老化温度175℃老化的小型台面PIN光电检测器10,图4示出其暗电流特性。从图4容易看出,在5000小时中,PIN光电检测器10的暗电流保持稳定于其初始值,几乎没有或没有退化。这相当于说,在正常工作温度下,例如70℃下,其使用寿命超过20年。
小型台面PIN光电检测器10的特征之一是:光电检测器的电容不会由于较大的n型台面而明显变大。因此,PIN光电检测器10的带宽不会明显不同于常规台面PIN的带宽,这是用光波成分分析仪通过一系列器件测量以实验证实的。
小型台面PIN与传统台面PIN的测量电带宽的比较说明:40μm直径小型台面PIN光电检测器10和类似尺寸标准台面PIN的3dB带宽皆约为15GHz。因此,PIN光电检测器10具有更充足的用于OC-192电信应用的带宽。
此外,小型台面PIN光电检测器10特别适用于“增强的”掺杂PIN,因为渐变(graded)掺杂浓度会大大提高高带宽PIN的速度和灵敏度。在一些实施例中,光电检测器结构涉及p型掺杂的梯度(grading),从而用顶层的p型接触层颠倒PIN结构,并且n型掺杂层被放在顶层,如图5中PIN光电检测器110所示。
PIN光电检测器110包括InAlAs之类的p+型接触层112,一个n+型金属接触层114,和一个n+型小型台面层116。在某些实施例中,n+型小型台面层116是InAlAs。一个可以是低掺杂的或未故障掺杂的InGaAs的吸收层122被安置于n+型小型台面层116与p+型接触层112之间。一对带隙渐变层120被安置于吸收层122上下。一个分级p+型层124被安置于吸收层122与p+型接触层112之间,从而分级p+层124的掺杂浓度会随着靠近p+型接触层112而增加。一个最好是InAlAs的未故障掺杂的钝化层118,被安置于n+型小型台面层16与上带隙渐变层120之间。钝化层126可以例如是BCB(苯并环丁烯),二氧化硅,氮化硅,或聚酰亚胺。p型金属接触层128被安置于p+型接触层112之上。这种结构使分级p型吸收层具有与大的外接触台面层相同的宽度,还具有小的小型台面n型接触层,以减小电容和增加带宽。
一种具有阻挡刻蚀层的简单刻蚀方法能用于制作上述的PIN光电检测器10或110。这些简单蚀刻小型台面结构能被再现地生长和制作,并且在整个圆片上很均匀。整个结构被初始地生长以后进行刻蚀,以限定一个控制相关电容面积的小局部小型台面接触区,从而产生一种低电容的高速PIN。因此,这种设计不需要一种限定小顶接触层的扩散步骤,从而比较简单,可产生在整个圆片上很均匀的光电检测器。
请注意,在PIN结构10,110中,靠近结构顶部的高表面场可通过高带隙钝化层18和118进行良好的控制。如前所述,这些结构是高速的,因为低电容是由小的小型台面直径区确定的,而不是由大的非临界隔离台面区确定的。
本发明原则的上述和其它实施例都处于下述权利要求书的范围。
Claims (26)
1.一种PIN光电检测器,包括:
第一半导体接触层;
半导体吸收层,第一半导体接触层的面积小于半导体吸收层的面积;
半导体钝化层,它定位于第一半导体接触层与半导体吸收层之间;和
第二半导体接触层,半导体吸收层和钝化层被定位于第一与第二半导体接触层之间。
2.根据权利要求1所述的光电检测器,其中,半导体吸收层是InGaAs。
3.根据权利要求1所述的光电检测器,其中,钝化层是InAlAs。
4.根据权利要求1所述的光电检测器,其中,第一半导体接触层是p型的;第二半导体接触层是n型的。
5.根据权利要求1所述的光电检测器,其中,第一半导体接触层是n型的;第二半导体接触层是p型的。
6.根据权利要求5所述的光电检测器,其中,第一和第二半导体接触层是InAlAs。
7.根据权利要求1所述的光电检测器,还包括第二半导体钝化层,它定位于第一半导体钝化层和半导体吸收层的周围。
8.根据权利要求1所述的光电检测器,还包括第一金属接触层,它被定位成邻接于第一半导体接触层;和至少第二金属接触层,它被定位成邻接于第二半导体接触层。
9.根据权利要求8所述的光电检测器,其中,第一金属接触层是p型的,第二金属接触层是n型的。
10.根据权利要求8所述的光电检测器,其中,第一金属接触层是n型的,第二金属接触层是p型的。
11.根据权利要求1所述的光电检测器,还包括第一带隙渐变层,它被定位于半导体钝化层与半导体吸收层之间;和第二带隙渐变层,它被定位于半导体吸收层与第二半导体接触层之间。
12.根据权利要求1所述的光电检测器,其中,半导体吸收层中心附近的电场大于半导体吸收层边缘附近的电场。
13.根据权利要求1所述的光电检测器,其中,光电二极管的电容是由第一半导体接触层的面积确定的。
14.根据权利要求1所述的光电检测器,其中,光电二极管具有相对于初始值基本恒定的暗电流特性。
15.根据权利要求14所述的光电检测器,其中,光电二极管具有相对于初始值在一段大于2000小时的时段中基本恒定的暗电流特性。
16.根据权利要求1所述的光电检测器,其中,光电二极管具有超过20年的使用寿命。
17.根据权利要求1所述的光电检测器,其中,使用其它半导体,例如InP或其它二元或三元III-V族半导体。
18.一种制作PIN光电检测器的方法,包括:
提供下半导体接触层;
淀积半导体吸收层;
淀积半导体钝化层;和
淀积或制作其面积小于半导体吸收层的上半导体接触层。
19.根据权利要求18所述的方法,其中,半导体吸收层是InGaAs。
20.根据权利要求18所述的方法,其中,钝化层是InAlAs。
21.根据权利要求18所述的方法,其中,下半导体接触层是n型的,上半导体接触层是p型的。
22.根据权利要求18所述的方法,其中,下半导体接触层是p型的,上半导体接触层是n型的。
23.根据权利要求22所述的方法,其中,两个半导体接触层都是InAlAs。
24.根据权利要求18所述的方法,还包括:在第一半导体钝化层和半导体吸收层的周围淀积第二半导体钝化层。
25.根据权利要求18所述的方法,还包括:在下半导体接触层与半导体吸收层之间淀积第一渐变层;和在半导体吸收层与半导体钝化层之间淀积第二渐变层。
26.根据权利要求18所述的方法,还使用其它的半导体,例如InP,或其它二元或三元III-V族半导体。
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Application Number | Priority Date | Filing Date | Title |
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US46739903P | 2003-05-02 | 2003-05-02 | |
US60/467,399 | 2003-05-02 |
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CN1853279A true CN1853279A (zh) | 2006-10-25 |
CN100499173C CN100499173C (zh) | 2009-06-10 |
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CNB2004800152263A Expired - Lifetime CN100499173C (zh) | 2003-05-02 | 2004-04-30 | Pin光电检测器 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7468503B2 (zh) |
EP (1) | EP1620899B1 (zh) |
JP (1) | JP5022032B2 (zh) |
KR (1) | KR101131650B1 (zh) |
CN (1) | CN100499173C (zh) |
CA (1) | CA2528216C (zh) |
ES (1) | ES2461524T3 (zh) |
HK (1) | HK1097957A1 (zh) |
WO (1) | WO2004100224A2 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2010020067A1 (en) * | 2008-08-19 | 2010-02-25 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting device with passivation layer |
WO2010020066A1 (en) * | 2008-08-19 | 2010-02-25 | Lattice Power (Jiangxi) Corporation | Method for fabricating semiconductor light-emitting device with double-sided passivation |
CN102064187B (zh) * | 2009-11-11 | 2013-02-13 | 中国科学院半导体研究所 | 一种碳化硅同质pin微结构材料及其制作方法 |
CN112259632A (zh) * | 2020-09-30 | 2021-01-22 | 中国电子科技集团公司第十三研究所 | 光电探测器及其制备方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080191240A1 (en) * | 2005-05-18 | 2008-08-14 | Mitsubishi Electric Corporation | Avalanche Photo Diode |
JP5025330B2 (ja) | 2007-05-22 | 2012-09-12 | 三菱電機株式会社 | 半導体受光素子およびその製造方法 |
TWI455354B (zh) * | 2012-07-05 | 2014-10-01 | Univ Nat Central | Homogeneous junction type of high speed photodiode |
EP3077851B1 (en) * | 2013-12-04 | 2020-06-17 | Koninklijke Philips N.V. | Imaging detector self-diagnostic circuitry |
CN104576806B (zh) * | 2014-08-12 | 2016-01-06 | 深圳市芯思杰联邦国际科技发展有限公司 | 侧入光式pin光电探测器芯片及其制作方法 |
US9748307B2 (en) | 2014-11-13 | 2017-08-29 | Artilux Inc. | Light absorption apparatus |
US9799689B2 (en) | 2014-11-13 | 2017-10-24 | Artilux Inc. | Light absorption apparatus |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8322235D0 (en) * | 1983-08-18 | 1983-09-21 | Standard Telephones Cables Ltd | Photodetector |
US4885622A (en) * | 1984-03-23 | 1989-12-05 | Oki Electric Industry Co., Ltd. | Pin photodiode and method of fabrication of the same |
US4771325A (en) * | 1985-02-11 | 1988-09-13 | American Telephone & Telegraph Co., At&T Bell Laboratories | Integrated photodetector-amplifier device |
FR2581482B1 (fr) * | 1985-05-03 | 1987-07-10 | Labo Electronique Physique | Photodiode pin a faible courant de fuite |
GB9003039D0 (en) * | 1990-02-10 | 1990-04-11 | Stc Plc | Photodiode |
JPH04332178A (ja) * | 1991-05-02 | 1992-11-19 | Sumitomo Electric Ind Ltd | 受光素子 |
US5212395A (en) * | 1992-03-02 | 1993-05-18 | At&T Bell Laboratories | P-I-N photodiodes with transparent conductive contacts |
JP2743726B2 (ja) | 1992-07-07 | 1998-04-22 | ヤマハ株式会社 | 電子楽器 |
US5448099A (en) * | 1993-03-04 | 1995-09-05 | Sumitomo Electric Industries, Ltd. | Pin-type light receiving device, manufacture of the pin-type light receiving device and optoelectronic integrated circuit |
JPH06314813A (ja) * | 1993-03-04 | 1994-11-08 | Sumitomo Electric Ind Ltd | pin型受光素子、その製造方法及び光電子集積回路 |
JP4136009B2 (ja) * | 1995-02-02 | 2008-08-20 | 住友電気工業株式会社 | pin型受光素子、およびpin型受光素子の製造方法 |
JPH0945954A (ja) * | 1995-07-31 | 1997-02-14 | Mitsubishi Electric Corp | 半導体素子,及び半導体素子の製造方法 |
US5652435A (en) * | 1995-09-01 | 1997-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Vertical structure schottky diode optical detector |
WO1997011494A1 (en) | 1995-09-19 | 1997-03-27 | Astralux, Incorporated | X-ray detector |
JP4095746B2 (ja) * | 1999-12-17 | 2008-06-04 | 日本オプネクスト株式会社 | 半導体受光装置および製造方法 |
AU2001245916A1 (en) | 2000-03-22 | 2001-10-03 | Aegis Semiconductor | A semitransparent optical detector with a transparent conductor and method of making |
US6756613B2 (en) * | 2000-11-03 | 2004-06-29 | Multiplex, Inc. | Shallow-mesa structure for planar PIN and APD photodiodes |
US6774448B1 (en) * | 2000-11-30 | 2004-08-10 | Optical Communication Products, Inc. | High speed detectors having integrated electrical components |
JP4220688B2 (ja) * | 2001-02-26 | 2009-02-04 | 日本オプネクスト株式会社 | アバランシェホトダイオード |
CN1633699A (zh) * | 2002-02-01 | 2005-06-29 | 派克米瑞斯公司 | 电荷控制雪崩光电二极管及其制造方法 |
US6794631B2 (en) * | 2002-06-07 | 2004-09-21 | Corning Lasertron, Inc. | Three-terminal avalanche photodiode |
-
2004
- 2004-04-30 US US10/555,144 patent/US7468503B2/en active Active
- 2004-04-30 WO PCT/US2004/013464 patent/WO2004100224A2/en active Application Filing
- 2004-04-30 CN CNB2004800152263A patent/CN100499173C/zh not_active Expired - Lifetime
- 2004-04-30 EP EP04751056.5A patent/EP1620899B1/en not_active Expired - Lifetime
- 2004-04-30 ES ES04751056.5T patent/ES2461524T3/es not_active Expired - Lifetime
- 2004-04-30 KR KR1020057020803A patent/KR101131650B1/ko not_active IP Right Cessation
- 2004-04-30 CA CA2528216A patent/CA2528216C/en not_active Expired - Lifetime
- 2004-04-30 JP JP2006514183A patent/JP5022032B2/ja not_active Expired - Lifetime
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2007
- 2007-04-24 HK HK07104303.7A patent/HK1097957A1/xx not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010020067A1 (en) * | 2008-08-19 | 2010-02-25 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting device with passivation layer |
WO2010020066A1 (en) * | 2008-08-19 | 2010-02-25 | Lattice Power (Jiangxi) Corporation | Method for fabricating semiconductor light-emitting device with double-sided passivation |
CN102067346B (zh) * | 2008-08-19 | 2013-09-04 | 晶能光电(江西)有限公司 | 具有钝化层的半导体发光器件及其制造方法 |
CN102064187B (zh) * | 2009-11-11 | 2013-02-13 | 中国科学院半导体研究所 | 一种碳化硅同质pin微结构材料及其制作方法 |
CN112259632A (zh) * | 2020-09-30 | 2021-01-22 | 中国电子科技集团公司第十三研究所 | 光电探测器及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101131650B1 (ko) | 2012-03-28 |
CN100499173C (zh) | 2009-06-10 |
US7468503B2 (en) | 2008-12-23 |
EP1620899B1 (en) | 2014-03-12 |
WO2004100224A2 (en) | 2004-11-18 |
ES2461524T3 (es) | 2014-05-20 |
JP2007528584A (ja) | 2007-10-11 |
EP1620899A2 (en) | 2006-02-01 |
CA2528216C (en) | 2014-04-08 |
JP5022032B2 (ja) | 2012-09-12 |
US20060226343A1 (en) | 2006-10-12 |
HK1097957A1 (en) | 2007-07-06 |
WO2004100224A3 (en) | 2005-06-16 |
KR20060007422A (ko) | 2006-01-24 |
CA2528216A1 (en) | 2004-11-18 |
EP1620899A4 (en) | 2007-08-01 |
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