CN1816893B - 窄隙电容耦合反应器的射频脉冲调制 - Google Patents

窄隙电容耦合反应器的射频脉冲调制 Download PDF

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Publication number
CN1816893B
CN1816893B CN2004800191395A CN200480019139A CN1816893B CN 1816893 B CN1816893 B CN 1816893B CN 2004800191395 A CN2004800191395 A CN 2004800191395A CN 200480019139 A CN200480019139 A CN 200480019139A CN 1816893 B CN1816893 B CN 1816893B
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radio
frequency
frequency power
power supply
electrode
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Expired - Fee Related
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CN2004800191395A
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Chinese (zh)
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CN1816893A (zh
Inventor
P·勒温哈德特
M·斯里尼瓦桑
A·菲舍尔
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
CN2004800191395A 2003-05-06 2004-04-29 窄隙电容耦合反应器的射频脉冲调制 Expired - Fee Related CN1816893B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/431,030 2003-05-06
US10/431,030 US7976673B2 (en) 2003-05-06 2003-05-06 RF pulsing of a narrow gap capacitively coupled reactor
PCT/US2004/013707 WO2004102638A2 (en) 2003-05-06 2004-04-29 Rf pulsing of a narrow gap capacitively coupled reactor

Publications (2)

Publication Number Publication Date
CN1816893A CN1816893A (zh) 2006-08-09
CN1816893B true CN1816893B (zh) 2012-09-19

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CN2004800191395A Expired - Fee Related CN1816893B (zh) 2003-05-06 2004-04-29 窄隙电容耦合反应器的射频脉冲调制

Country Status (9)

Country Link
US (2) US7976673B2 (enExample)
EP (1) EP1620876B1 (enExample)
JP (1) JP4794449B2 (enExample)
KR (2) KR20060013386A (enExample)
CN (1) CN1816893B (enExample)
AT (1) ATE470949T1 (enExample)
DE (1) DE602004027620D1 (enExample)
TW (1) TWI460784B (enExample)
WO (1) WO2004102638A2 (enExample)

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JP5192209B2 (ja) 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5514413B2 (ja) 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
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US8154209B2 (en) * 2009-04-06 2012-04-10 Lam Research Corporation Modulated multi-frequency processing method
US8659335B2 (en) 2009-06-25 2014-02-25 Mks Instruments, Inc. Method and system for controlling radio frequency power
US20110011534A1 (en) * 2009-07-17 2011-01-20 Rajinder Dhindsa Apparatus for adjusting an edge ring potential during substrate processing
KR101384341B1 (ko) * 2010-06-10 2014-04-14 에스티에스반도체통신 주식회사 무선 전력과 무선 주파수 신호를 이용하는 스크린 프린팅 장치
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9184028B2 (en) * 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
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US9197196B2 (en) * 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9114666B2 (en) * 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9030101B2 (en) * 2012-02-22 2015-05-12 Lam Research Corporation Frequency enhanced impedance dependent power control for multi-frequency RF pulsing
TWI599272B (zh) * 2012-09-14 2017-09-11 蘭姆研究公司 根據三個或更多狀態之功率及頻率調整
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Also Published As

Publication number Publication date
US20040221958A1 (en) 2004-11-11
US7976673B2 (en) 2011-07-12
KR20060013386A (ko) 2006-02-09
TWI460784B (zh) 2014-11-11
CN1816893A (zh) 2006-08-09
KR20120098951A (ko) 2012-09-05
DE602004027620D1 (de) 2010-07-22
EP1620876A2 (en) 2006-02-01
US20110263130A1 (en) 2011-10-27
KR101303969B1 (ko) 2013-09-03
US8337713B2 (en) 2012-12-25
JP4794449B2 (ja) 2011-10-19
ATE470949T1 (de) 2010-06-15
JP2007501530A (ja) 2007-01-25
WO2004102638A3 (en) 2005-07-28
TW200504870A (en) 2005-02-01
EP1620876B1 (en) 2010-06-09
WO2004102638A2 (en) 2004-11-25

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Granted publication date: 20120919