CN1790643A - 包含掺杂了的纳米元件的装置及其形成方法 - Google Patents
包含掺杂了的纳米元件的装置及其形成方法 Download PDFInfo
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- CN1790643A CN1790643A CNA2005101235166A CN200510123516A CN1790643A CN 1790643 A CN1790643 A CN 1790643A CN A2005101235166 A CNA2005101235166 A CN A2005101235166A CN 200510123516 A CN200510123516 A CN 200510123516A CN 1790643 A CN1790643 A CN 1790643A
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- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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- H01L29/772—Field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
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Abstract
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2005
- 2005-05-26 US US11/138,797 patent/US7405129B2/en not_active Expired - Fee Related
- 2005-11-17 CN CN200510123516A patent/CN100590814C/zh active Active
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CN106847696B (zh) * | 2015-12-07 | 2020-05-08 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管的形成方法 |
CN107293616A (zh) * | 2017-06-30 | 2017-10-24 | 重庆大学 | 一种铁电栅介质CdSe纳米线光电晶体管及其制备方法 |
CN107740150A (zh) * | 2017-08-25 | 2018-02-27 | 洛阳师范学院 | 一种硒化锗薄膜及其制备方法 |
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CN107620103A (zh) * | 2017-09-11 | 2018-01-23 | 洛阳师范学院 | 一种一硫化锗薄膜的制备方法 |
CN107620103B (zh) * | 2017-09-11 | 2019-12-24 | 洛阳师范学院 | 一种一硫化锗薄膜的制备方法 |
CN109301213A (zh) * | 2018-09-30 | 2019-02-01 | 肇庆市华师大光电产业研究院 | 一种锂离子电池负极材料及其制备方法 |
CN109301213B (zh) * | 2018-09-30 | 2021-07-13 | 肇庆市华师大光电产业研究院 | 一种锂离子电池负极材料及其制备方法 |
CN113903788A (zh) * | 2021-09-24 | 2022-01-07 | 上海华虹宏力半导体制造有限公司 | 三维半导体器件的掺杂方法 |
CN113903788B (zh) * | 2021-09-24 | 2024-01-19 | 上海华虹宏力半导体制造有限公司 | 三维半导体器件的掺杂方法 |
Also Published As
Publication number | Publication date |
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US20060105513A1 (en) | 2006-05-18 |
CN100590814C (zh) | 2010-02-17 |
US20080230849A1 (en) | 2008-09-25 |
US7405129B2 (en) | 2008-07-29 |
US7982274B2 (en) | 2011-07-19 |
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