CN112038440A - 一种以离子液为顶栅的薄层Bi2O2Se晶体管及其制备方法 - Google Patents
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Abstract
本发明公开了一种Bi2O2Se晶体管器件的制备方法，根据该方法制备的器件是由离子液作为顶栅，直接在云母片上进行测试，不需要使用HF溶液刻蚀转移Bi2O2Se，减少了对Bi2O2Se的伤害，使用的方法简单，重复性好，对材料无伤害，本发明制备出的以离子液为顶栅的薄层Bi2O2Se晶体管器件可以扩展对Bi2O2Se的研究。
Description
技术领域
本发明涉及无极纳米材料以及光电器件技术领域，更具体地说它涉及一种以离子液为顶栅的薄层Bi2O2Se晶体管及其制备方法。
背景技术
具有良好环境稳定性的高迁移率超薄半导体，比如石墨烯、六方氮化硼(hBN) 和过渡金属双卤代烃(TMDs)等新型二维原子薄材料因其在下一代电子和光子学领域的潜在应用而受到广泛关注。载流子浓度和迁移率是任何数字应用半导体通道材料的两个最主要的特征参数。信道材料的高载流子迁移率被用来加速高性能数字设备的运行速度。同时，低残留载流子浓度的通道可以产生极好的栅极控制 (尤其是低阈值电压)，这对于降低工作电压至关重要，从而使低功率数字器件的制造成为可能。近年来，新发现的二维层状Bi2O2Se表现出了优异的灵敏度和光电子性能。Bi2O2Se作为一种新型的二维半导体材料，具有良好的流动性和空气稳定性。Bi2O2Se由交替补偿阳离子((Bi2O2)n 2n+)和阴离子(Sen 2n-)组成，层间间距约为0.608nm的弱静电力将各层连接在一起。然而，高的暗电流和小开关比限制了基于Bi2O2Se的光电探测器在云母片衬底上的性能。
发明内容
针对现有技术存在的不足，本发明在于提供一种以离子液为顶栅的薄层 Bi2O2Se晶体管及其制备方法，具有使用方法简单，重复性好，对材料无伤害的有益效果。
为实现上述目的，本发明提供了如下技术方案：一种以离子液为顶栅的薄层Bi2O2Se晶体管及其制备方法，其特征在于：包括如下步骤；
1.CVD方法生长Bi2O2Se薄层晶片：
用Bi2O3和Bi2Se3粉末为反应物，称取4：1的量，放入管式炉中，Bi2Se3放置在上游，Bi2O3放置在温区中心，两种反应物相距5cm，加热温度为650℃，以云母片作为衬底，放置在距离中心温区13cm的下游，反应30min；反应前用Ar气300sccm洗气 20min，反应时Ar气流量为100sccm；反应完后待自然冷却，将样品取出可在显微镜下观察；
2.Au电极制备：
a)取一块干净的硅片，滴一滴PMMA并旋涂，旋涂完后将硅片放置在加热到 150℃的加热台上加热3min，使PMMA涂层固化；
b)利用电子束光刻的方法，在PMMA涂层上刻画出Au电极形状，然后将硅片泡在显影液中1min，定影液30s，用N2气枪吹干；
c)用热蒸发的方法，将Au金属蒸发沉积到硅片上，60nm厚；
d)将镀完Au的硅片在50℃条件下，在丙酮中泡20min，将PMMA涂层泡掉，即可得到Au电极。
3.将Au电极贴到Bi2O2Se薄层晶片上：
a)旋涂PMMA涂层到Au电极上，固化后，用刻刀在硅片边缘划一圈；
b)放置到10％的HF溶液中，将带有Au电极的PMMA层泡下来，然后用镊子将PMMA薄层放在去离子水中清洗3次；
c)用一块干净的硅片将PMMA薄层整齐地捞起，然后用PDMS膜贴在PMMA 薄层的上面；
d)利用PDMS的支持力，将Au电极对准在云母片上生长好的Bi2O2Se薄层晶片，贴上后，在80℃条件下加热10min，使PDMS变性，再揭起，可将PDMS 与PMMA涂层分离，此时PMMA涂层以及下方的Au电极贴在Bi2O2Se上；
e)将云母片放置在加热台上，50℃加热20min，以使电极与Bi2O2Se接触更牢固；
f)在50℃的条件下，将带有PMMA涂层的云母片放置在丙酮中泡20min，以去除PMMA；
g)用镊子将云母片夹起，用N2枪将表层的丙酮吹干，即可获得Bi2O2Se器件；
4.利用液滴枪将离子液滴在Bi2O2Se上方，同时覆盖两边的电极；
5.在真空中对Bi2O2Se器件进行电学测试。
综上所述，本发明具有以下有益效果：提出了一种Bi2O2Se晶体管器件的新的制备方法；其制备的器件是由离子液作为顶栅，直接在云母片上进行测试，不需要使用HF溶液刻蚀转移Bi2O2Se，减少了对Bi2O2Se的伤害，使用的方法简单，重复性好，对材料无伤害；根据该方法制备出的以离子液为顶栅的薄层Bi2O2Se 晶体管器件可以扩展对Bi2O2Se的研究。
附图说明
图1：滴上离子液的Bi2O2Se器件；
图2：在真空条件下，170K时测试，Vds＝0.2V时的Ids-Vg图，黑暗与光照不同条件下的转移曲线图；
图3：在真空条件下，170K时测试，Vds＝0.2V，Vg＝2V。在532nm激光照射下随时间变化的Ids变化图，可看出Bi2O2Se优异的光电响应；
图4：用532nm激光条件测试得到的生长在云母片上的Bi2O2Se的拉曼光谱图。
具体实施方式
以下结合附图对本发明作进一步详细说明。
一种以离子液为顶栅的薄层Bi2O2Se晶体管及其制备方法，具有使用方法简单，重复性好，对材料无伤害的有益效果；包括如下步骤；
1.CVD方法生长Bi2O2Se薄层晶片：
用Bi2O3和Bi2Se3粉末为反应物，称取4：1的量，放入管式炉中，Bi2Se3放置在上游，Bi2O3放置在温区中心，两种反应物相距5cm，加热温度为650℃，以云母片作为衬底，放置在距离中心温区13cm的下游，反应30min；反应前用Ar气300sccm洗气 20min，反应时Ar气流量为100sccm；反应完后待自然冷却，将样品取出可在显微镜下观察；
2.Au电极制备：
a)取一块干净的硅片，滴一滴PMMA并旋涂，旋涂完后将硅片放置在加热到 150℃的加热台上加热3min，使PMMA涂层固化；
b)利用电子束光刻的方法，在PMMA涂层上刻画出Au电极形状，然后将硅片泡在显影液中1min，定影液30s，用N2气枪吹干；
c)用热蒸发的方法，将Au金属蒸发沉积到硅片上，60nm厚；
d)将镀完Au的硅片在50℃条件下，在丙酮中泡20min，将PMMA涂层泡掉，即可得到Au电极。
3.将Au电极贴到Bi2O2Se薄层晶片上：
a)旋涂PMMA涂层到Au电极上，固化后，用刻刀在硅片边缘划一圈；
b)放置到10％的HF溶液中，将带有Au电极的PMMA层泡下来，然后用镊子将PMMA薄层放在去离子水中清洗3次；
c)用一块干净的硅片将PMMA薄层整齐地捞起，然后用PDMS膜贴在PMMA 薄层的上面；
d)利用PDMS的支持力，将Au电极对准在云母片上生长好的Bi2O2Se薄层晶片，贴上后，在80℃条件下加热10min，使PDMS变性，再揭起，可将PDMS 与PMMA涂层分离，此时PMMA涂层以及下方的Au电极贴在Bi2O2Se上；
e)将云母片放置在加热台上，50℃加热20min，以使电极与Bi2O2Se接触更牢固；
f)在50℃的条件下，将带有PMMA涂层的云母片放置在丙酮中泡20min，以去除PMMA；
g)用镊子将云母片夹起，用N2枪将表层的丙酮吹干，即可获得Bi2O2Se器件；
4.利用液滴枪将离子液滴在Bi2O2Se上方，同时覆盖两边的电极；
5.在真空中对Bi2O2Se器件进行电学测试。
综上所述，本发明具有以下有益效果：提出了一种Bi2O2Se晶体管器件的新的制备方法；其制备的器件是由离子液作为顶栅，直接在云母片上进行测试，不需要使用HF溶液刻蚀转移Bi2O2Se，减少了对Bi2O2Se的伤害，使用的方法简单，重复性好，对材料无伤害；根据该方法制备出的以离子液为顶栅的薄层Bi2O2Se 晶体管器件可以扩展对Bi2O2Se的研究。
以上所述仅为本发明的较佳实施例，并不用于限制本发明，凡在本发明的设计构思之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (1)
1.一种以离子液为顶栅的薄层Bi2O2Se晶体管及其制备方法，其特征在于：包括如下步骤；
1.CVD方法生长Bi2O2Se薄层晶片：
用Bi2O3和Bi2Se3粉末为反应物，称取4：1的量，放入管式炉中，Bi2Se3放置在上游，Bi2O3放置在温区中心，两种反应物相距5cm，加热温度为650℃，以云母片作为衬底，放置在距离中心温区13cm的下游，反应30min；反应前用Ar气300sccm洗气20min，反应时Ar气流量为100sccm；反应完后待自然冷却，将样品取出可在显微镜下观察；
2.Au电极制备：
a)取一块干净的硅片，滴一滴PMMA并旋涂，旋涂完后将硅片放置在加热到150℃的加热台上加热3min，使PMMA涂层固化；
b)利用电子束光刻的方法，在PMMA涂层上刻画出Au电极形状，然后将硅片泡在显影液中1min，定影液30s，用N2气枪吹干；
c)用热蒸发的方法，将Au金属蒸发沉积到硅片上，60nm厚；
d)将镀完Au的硅片在50℃条件下，在丙酮中泡20min，将PMMA涂层泡掉，即可得到Au电极。
3.将Au电极贴到Bi2O2Se薄层晶片上：
a)旋涂PMMA涂层到Au电极上，固化后，用刻刀在硅片边缘划一圈；
b)放置到10％的HF溶液中，将带有Au电极的PMMA层泡下来，然后用镊子将PMMA薄层放在去离子水中清洗3次；
c)用一块干净的硅片将PMMA薄层整齐地捞起，然后用PDMS膜贴在PMMA薄层的上面；
d)利用PDMS的支持力，将Au电极对准在云母片上生长好的Bi2O2Se薄层晶片，贴上后，在80℃条件下加热10min，使PDMS变性，再揭起，可将PDMS与PMMA涂层分离，此时PMMA涂层以及下方的Au电极贴在Bi2O2Se上；
e)将云母片放置在加热台上，50℃加热20min，以使电极与Bi2O2Se接触更牢固；
f)在50℃的条件下，将带有PMMA涂层的云母片放置在丙酮中泡20min，以去除PMMA；
g)用镊子将云母片夹起，用N2枪将表层的丙酮吹干，即可获得Bi2O2Se器件；
4.利用液滴枪将离子液滴在Bi2O2Se上方，同时覆盖两边的电极；
5.在真空中对Bi2O2Se器件进行电学测试。
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