CN1789476A - 组织均匀的高熔点金属板及其制造方法 - Google Patents

组织均匀的高熔点金属板及其制造方法 Download PDF

Info

Publication number
CN1789476A
CN1789476A CNA200510128891XA CN200510128891A CN1789476A CN 1789476 A CN1789476 A CN 1789476A CN A200510128891X A CNA200510128891X A CN A200510128891XA CN 200510128891 A CN200510128891 A CN 200510128891A CN 1789476 A CN1789476 A CN 1789476A
Authority
CN
China
Prior art keywords
refractory metal
metal plates
thickness
workpiece
tantalum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200510128891XA
Other languages
English (en)
Chinese (zh)
Inventor
P·R·杰普森
H·乌伦胡特
P·库马尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HC Starck GmbH
Original Assignee
HC Starck GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23029400&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN1789476(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by HC Starck GmbH filed Critical HC Starck GmbH
Publication of CN1789476A publication Critical patent/CN1789476A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Forging (AREA)
  • Powder Metallurgy (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Aerials With Secondary Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)
CNA200510128891XA 2001-02-20 2002-02-20 组织均匀的高熔点金属板及其制造方法 Pending CN1789476A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26998301P 2001-02-20 2001-02-20
US60/269,983 2001-02-20

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB028051009A Division CN1238547C (zh) 2001-02-20 2002-02-20 组织均匀的高熔点金属板及其制造方法

Publications (1)

Publication Number Publication Date
CN1789476A true CN1789476A (zh) 2006-06-21

Family

ID=23029400

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA200510128891XA Pending CN1789476A (zh) 2001-02-20 2002-02-20 组织均匀的高熔点金属板及其制造方法
CNB028051009A Expired - Fee Related CN1238547C (zh) 2001-02-20 2002-02-20 组织均匀的高熔点金属板及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB028051009A Expired - Fee Related CN1238547C (zh) 2001-02-20 2002-02-20 组织均匀的高熔点金属板及其制造方法

Country Status (20)

Country Link
US (1) US20020112789A1 (enExample)
EP (1) EP1366203B1 (enExample)
JP (1) JP4327460B2 (enExample)
KR (1) KR100966682B1 (enExample)
CN (2) CN1789476A (enExample)
AT (1) ATE339532T1 (enExample)
AU (1) AU2002257005B2 (enExample)
BR (1) BR0207384A (enExample)
CA (1) CA2438819A1 (enExample)
CZ (1) CZ20032246A3 (enExample)
DE (1) DE60214683T2 (enExample)
ES (1) ES2272707T3 (enExample)
HU (1) HUP0303269A3 (enExample)
IL (1) IL157279A0 (enExample)
MX (1) MXPA03007490A (enExample)
NO (1) NO20033547L (enExample)
NZ (1) NZ527628A (enExample)
PT (1) PT1366203E (enExample)
WO (1) WO2002070765A1 (enExample)
ZA (1) ZA200306399B (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
JP4263900B2 (ja) * 2002-11-13 2009-05-13 日鉱金属株式会社 Ｔａスパッタリングターゲット及びその製造方法
WO2004095501A2 (en) * 2003-04-23 2004-11-04 H.C. Starck Inc. Molybdenum alloy x-ray targets having uniform grain structure
US7228722B2 (en) * 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
WO2004114355A2 (en) * 2003-06-20 2004-12-29 Cabot Corporation Method and design for sputter target attachment to a backing plate
KR100760156B1 (ko) * 2003-11-06 2007-09-18 닛코킨조쿠 가부시키가이샤 탄탈륨 스퍼터링 타겟트
US20070144623A1 (en) * 2004-02-18 2007-06-28 Wickersham Charles E Jr Ultrasonic method for detecting banding in metals
WO2005098073A1 (en) * 2004-03-26 2005-10-20 H.C. Starck Inc. Refractory metal pots
US7666243B2 (en) 2004-10-27 2010-02-23 H.C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
US7998287B2 (en) 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
EP1880035B1 (en) 2005-05-05 2021-01-20 Höganäs Germany GmbH Method for coating a substrate surface and coated product
WO2006117145A2 (en) * 2005-05-05 2006-11-09 H.C. Starck Gmbh Coating process for manufacture or reprocessing of sputter targets and x-ray anodes
US20070044873A1 (en) 2005-08-31 2007-03-01 H. C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
DE112007000440B4 (de) * 2006-03-07 2021-01-07 Global Advanced Metals, Usa, Inc. Verfahren zum Erzeugen von verformten Metallartikeln
JP4974362B2 (ja) 2006-04-13 2012-07-11 株式会社アルバック Ｔａスパッタリングターゲットおよびその製造方法
US20080078268A1 (en) * 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US7776166B2 (en) * 2006-12-05 2010-08-17 Praxair Technology, Inc. Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8250895B2 (en) * 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
KR101201577B1 (ko) 2007-08-06 2012-11-14 에이치. 씨. 스타아크 아이앤씨 향상된 조직 균일성을 가진 내화 금속판
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8043655B2 (en) * 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
CN101920436B (zh) * 2010-08-20 2011-10-26 宁夏东方钽业股份有限公司 溅射钽环件用钽条的制备工艺
CN102021523A (zh) * 2010-09-29 2011-04-20 吴江南玻华东工程玻璃有限公司 一种解决镀膜玻璃边缘效应的方法
US9412568B2 (en) 2011-09-29 2016-08-09 H.C. Starck, Inc. Large-area sputtering targets
CN102658346A (zh) * 2012-04-06 2012-09-12 宁夏东方钽业股份有限公司 一种大规格钽靶材的锻造方法
CN102699247B (zh) * 2012-05-18 2014-06-18 宁夏东方钽业股份有限公司 一种超导钽棒的锻造方法
CN103861982B (zh) * 2012-12-18 2016-06-15 宁夏东方钽业股份有限公司 一种铌旋转靶材铸锭的锻造方法
CN104419901B (zh) * 2013-08-27 2017-06-30 宁波江丰电子材料股份有限公司 一种钽靶材的制造方法
WO2015146516A1 (ja) * 2014-03-27 2015-10-01 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット及びその製造方法
US10023953B2 (en) 2014-04-11 2018-07-17 H.C. Starck Inc. High purity refractory metal powders and their use in sputtering targets which may have random texture
US10961613B2 (en) * 2014-12-22 2021-03-30 Agency For Defense Development Method for controlling microstructure and texture of tantalum
EP3211118B1 (en) * 2015-05-22 2020-09-09 JX Nippon Mining & Metals Corporation Tantalum sputtering target, and production method therefor
JP6293928B2 (ja) 2015-05-22 2018-03-14 Ｊｘ金属株式会社 タンタルスパッタリングターゲット及びその製造方法
JP6553813B2 (ja) * 2017-03-30 2019-07-31 Ｊｘ金属株式会社 タンタルスパッタリングターゲット
US11062889B2 (en) 2017-06-26 2021-07-13 Tosoh Smd, Inc. Method of production of uniform metal plates and sputtering targets made thereby
US20190161850A1 (en) * 2017-11-30 2019-05-30 Tosoh Smd, Inc. Ultra-fine grain size tantalum sputtering targets with improved voltage performance and methods thereby
EP3951004A4 (en) * 2019-03-26 2022-12-14 JX Nippon Mining & Metals Corporation Niobium sputtering target
CN110983218B (zh) * 2019-12-25 2021-09-03 西部超导材料科技股份有限公司 一种组织均匀的小规格纯铌棒材的制备方法
CN112143990B (zh) * 2020-09-04 2022-01-07 中国航发北京航空材料研究院 一种钛合金β相大尺寸单晶的制备方法
CN116288091A (zh) * 2023-03-28 2023-06-23 南昌大学 一种低温制备超细晶粒钽片的退火工艺
TW202540463A (zh) * 2023-12-05 2025-10-16 美商塔沙Ｓｍｄ公司 具有改善的性能及可預測性之鉭濺射靶及其製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2603980B2 (ja) * 1988-01-13 1997-04-23 株式会社東芝 高断熱性鋳鉄
JP2796752B2 (ja) * 1990-04-27 1998-09-10 日本軽金属株式会社 耐食皮膜用Ａｌ―Ｎｉ―Ｓｉ合金製スパッタリングターゲット
JPH06264233A (ja) * 1993-03-12 1994-09-20 Nikko Kinzoku Kk Ｔｆｔ製造用スパッタリングタ−ゲット
JP2857015B2 (ja) * 1993-04-08 1999-02-10 株式会社ジャパンエナジー 高純度アルミニウムまたはその合金からなるスパッタリングターゲット
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US5850755A (en) * 1995-02-08 1998-12-22 Segal; Vladimir M. Method and apparatus for intensive plastic deformation of flat billets
JPH10235670A (ja) * 1997-02-26 1998-09-08 Tosoh Corp ポリオレフィン樹脂連続気泡発泡体の製造方法
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6464809B2 (en) * 1998-11-30 2002-10-15 Outokumpu Oyj Processes for producing articles with stress-free slit edges
JP3079378B1 (ja) * 1999-02-10 2000-08-21 東京タングステン株式会社 Ｍｏスパッターリングターゲット材及びその製造方法
JP2001020065A (ja) * 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
AU2001296213A1 (en) * 2000-05-22 2001-12-24 Cabot Corporation High purity niobium and products containing the same, and methods of making the same

Also Published As

Publication number Publication date
MXPA03007490A (es) 2004-09-06
KR20030090645A (ko) 2003-11-28
EP1366203A4 (en) 2004-07-28
NO20033547D0 (no) 2003-08-11
CZ20032246A3 (cs) 2004-03-17
IL157279A0 (en) 2004-02-19
NO20033547L (no) 2003-09-26
JP4327460B2 (ja) 2009-09-09
ZA200306399B (en) 2004-08-18
DE60214683D1 (de) 2006-10-26
CA2438819A1 (en) 2002-09-12
KR100966682B1 (ko) 2010-06-29
WO2002070765A1 (en) 2002-09-12
HK1066833A1 (zh) 2005-04-01
ATE339532T1 (de) 2006-10-15
CN1238547C (zh) 2006-01-25
HUP0303269A2 (hu) 2004-01-28
EP1366203B1 (en) 2006-09-13
JP2004526863A (ja) 2004-09-02
CN1535322A (zh) 2004-10-06
AU2002257005B2 (en) 2007-05-31
ES2272707T3 (es) 2007-05-01
DE60214683T2 (de) 2007-09-13
PT1366203E (pt) 2006-12-29
NZ527628A (en) 2004-07-30
HUP0303269A3 (en) 2004-05-28
EP1366203A1 (en) 2003-12-03
US20020112789A1 (en) 2002-08-22
BR0207384A (pt) 2004-02-10

Similar Documents

Publication Publication Date Title
CN1238547C (zh) 组织均匀的高熔点金属板及其制造方法
AU2002257005A1 (en) Refractory metal plates with uniform texture and methods of making the same
Xiang et al. Grain refinement and mechanical properties of pure aluminum processed by accumulative extrusion bonding
CN102513353B (zh) 溅射靶及制造方法
CN1283830C (zh) 钽溅蚀靶和形成金属件的方法
CN1432070A (zh) 形成含铝物理气相沉积靶的方法;溅射薄膜;和靶的构成
CN102791905B (zh) 溅射靶及其制造方法、以及半导体元件的制造方法
CN1484711A (zh) 物理汽相淀积靶及制造金属材料的方法
CN1681960A (zh) 铜溅射靶和形成铜溅射靶的方法
CN104204282B (zh) 钽溅射靶及其制造方法以及使用该靶形成的半导体布线用阻挡膜
KR101347051B1 (ko) 고강도-고연성 층상복합알루미늄합금판재 및 상기 판재의 제조방법
CN101857950A (zh) 钽溅射靶
CN104419901B (zh) 一种钽靶材的制造方法
Qi et al. Superior mechanical properties and microstructural evolution of powder metallurgy 2195 Al-Li alloy subjected to hot extrusion
Li et al. Microstructure evolution and mechanical properties of Al/Mg–Li/Al laminate metallic composites via hot roll bonding and subsequent cryorolling
Zhang et al. Effect of Al2O3 particle content on microstructure and mechanical properties of 1060Al/Al–Al2O3 composites fabricated by cold spraying and accumulative roll bonding
Jiang et al. Microstructure and mechanical properties of multilayered Cu/Ti composites fabricated by accumulative roll bonding
Rogachev et al. Effect of number of ECAP passes on structure and mechanical properties of Al–Ca–Mn–Fe alloy
JP7108606B2 (ja) スパッタリングターゲット
KR20200055038A (ko) 스퍼터링용 티타늄 타깃 및 그 제조 방법, 그리고 티타늄 함유 박막의 제조 방법
CN113718110B (zh) 一种采用累积能量控制板材组织的高品质铌板的制备方法
Li et al. Unraveling the link between annealing system and microstructure-mechanical properties of Mg/Al clad plate with corrugated interface
HK1066833B (en) Refractory metal plates with uniform texture and methods of making the same
HK1088640A (en) Refractory metal plates with uniform texture and methods of making the same
CN120193221A (zh) 一种提高gh4099合金高温强韧性的方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1088640

Country of ref document: HK

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20060621

REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1088640

Country of ref document: HK