KR100966682B1 - 균일한 조직을 갖는 내화성 금속판 및 이 금속판의 제작방법 - Google Patents

균일한 조직을 갖는 내화성 금속판 및 이 금속판의 제작방법 Download PDF

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KR100966682B1
KR100966682B1 KR1020037010851A KR20037010851A KR100966682B1 KR 100966682 B1 KR100966682 B1 KR 100966682B1 KR 1020037010851 A KR1020037010851 A KR 1020037010851A KR 20037010851 A KR20037010851 A KR 20037010851A KR 100966682 B1 KR100966682 B1 KR 100966682B1
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South Korea
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plate
refractory metal
thickness
tantalum
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KR1020037010851A
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Korean (ko)
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KR20030090645A (ko
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젭슨피터알.
울렌허트헤닝
쿠마프라브하트
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에이치. 씨. 스타아크 아이앤씨
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Forging (AREA)
  • Powder Metallurgy (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Aerials With Secondary Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)
KR1020037010851A 2001-02-20 2002-02-20 균일한 조직을 갖는 내화성 금속판 및 이 금속판의 제작방법 Expired - Lifetime KR100966682B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26998301P 2001-02-20 2001-02-20
US60/269,983 2001-02-20
PCT/US2002/005033 WO2002070765A1 (en) 2001-02-20 2002-02-20 Refractory metal plates with uniform texture and methods of making the same

Publications (2)

Publication Number Publication Date
KR20030090645A KR20030090645A (ko) 2003-11-28
KR100966682B1 true KR100966682B1 (ko) 2010-06-29

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ID=23029400

Family Applications (1)

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KR1020037010851A Expired - Lifetime KR100966682B1 (ko) 2001-02-20 2002-02-20 균일한 조직을 갖는 내화성 금속판 및 이 금속판의 제작방법

Country Status (20)

Country Link
US (1) US20020112789A1 (enExample)
EP (1) EP1366203B1 (enExample)
JP (1) JP4327460B2 (enExample)
KR (1) KR100966682B1 (enExample)
CN (2) CN1789476A (enExample)
AT (1) ATE339532T1 (enExample)
AU (1) AU2002257005B2 (enExample)
BR (1) BR0207384A (enExample)
CA (1) CA2438819A1 (enExample)
CZ (1) CZ20032246A3 (enExample)
DE (1) DE60214683T2 (enExample)
ES (1) ES2272707T3 (enExample)
HU (1) HUP0303269A3 (enExample)
IL (1) IL157279A0 (enExample)
MX (1) MXPA03007490A (enExample)
NO (1) NO20033547L (enExample)
NZ (1) NZ527628A (enExample)
PT (1) PT1366203E (enExample)
WO (1) WO2002070765A1 (enExample)
ZA (1) ZA200306399B (enExample)

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US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
JP4263900B2 (ja) * 2002-11-13 2009-05-13 日鉱金属株式会社 Ｔａスパッタリングターゲット及びその製造方法
WO2004095501A2 (en) * 2003-04-23 2004-11-04 H.C. Starck Inc. Molybdenum alloy x-ray targets having uniform grain structure
US7228722B2 (en) * 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
WO2004114355A2 (en) * 2003-06-20 2004-12-29 Cabot Corporation Method and design for sputter target attachment to a backing plate
KR100760156B1 (ko) * 2003-11-06 2007-09-18 닛코킨조쿠 가부시키가이샤 탄탈륨 스퍼터링 타겟트
US20070144623A1 (en) * 2004-02-18 2007-06-28 Wickersham Charles E Jr Ultrasonic method for detecting banding in metals
WO2005098073A1 (en) * 2004-03-26 2005-10-20 H.C. Starck Inc. Refractory metal pots
US7666243B2 (en) 2004-10-27 2010-02-23 H.C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
US7998287B2 (en) 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
EP1880035B1 (en) 2005-05-05 2021-01-20 Höganäs Germany GmbH Method for coating a substrate surface and coated product
WO2006117145A2 (en) * 2005-05-05 2006-11-09 H.C. Starck Gmbh Coating process for manufacture or reprocessing of sputter targets and x-ray anodes
US20070044873A1 (en) 2005-08-31 2007-03-01 H. C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
DE112007000440B4 (de) * 2006-03-07 2021-01-07 Global Advanced Metals, Usa, Inc. Verfahren zum Erzeugen von verformten Metallartikeln
JP4974362B2 (ja) 2006-04-13 2012-07-11 株式会社アルバック Ｔａスパッタリングターゲットおよびその製造方法
US20080078268A1 (en) * 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US7776166B2 (en) * 2006-12-05 2010-08-17 Praxair Technology, Inc. Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8250895B2 (en) * 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
KR101201577B1 (ko) 2007-08-06 2012-11-14 에이치. 씨. 스타아크 아이앤씨 향상된 조직 균일성을 가진 내화 금속판
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8043655B2 (en) * 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
CN101920436B (zh) * 2010-08-20 2011-10-26 宁夏东方钽业股份有限公司 溅射钽环件用钽条的制备工艺
CN102021523A (zh) * 2010-09-29 2011-04-20 吴江南玻华东工程玻璃有限公司 一种解决镀膜玻璃边缘效应的方法
US9412568B2 (en) 2011-09-29 2016-08-09 H.C. Starck, Inc. Large-area sputtering targets
CN102658346A (zh) * 2012-04-06 2012-09-12 宁夏东方钽业股份有限公司 一种大规格钽靶材的锻造方法
CN102699247B (zh) * 2012-05-18 2014-06-18 宁夏东方钽业股份有限公司 一种超导钽棒的锻造方法
CN103861982B (zh) * 2012-12-18 2016-06-15 宁夏东方钽业股份有限公司 一种铌旋转靶材铸锭的锻造方法
CN104419901B (zh) * 2013-08-27 2017-06-30 宁波江丰电子材料股份有限公司 一种钽靶材的制造方法
WO2015146516A1 (ja) * 2014-03-27 2015-10-01 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット及びその製造方法
US10023953B2 (en) 2014-04-11 2018-07-17 H.C. Starck Inc. High purity refractory metal powders and their use in sputtering targets which may have random texture
US10961613B2 (en) * 2014-12-22 2021-03-30 Agency For Defense Development Method for controlling microstructure and texture of tantalum
EP3211118B1 (en) * 2015-05-22 2020-09-09 JX Nippon Mining & Metals Corporation Tantalum sputtering target, and production method therefor
JP6293928B2 (ja) 2015-05-22 2018-03-14 Ｊｘ金属株式会社 タンタルスパッタリングターゲット及びその製造方法
JP6553813B2 (ja) * 2017-03-30 2019-07-31 Ｊｘ金属株式会社 タンタルスパッタリングターゲット
US11062889B2 (en) 2017-06-26 2021-07-13 Tosoh Smd, Inc. Method of production of uniform metal plates and sputtering targets made thereby
US20190161850A1 (en) * 2017-11-30 2019-05-30 Tosoh Smd, Inc. Ultra-fine grain size tantalum sputtering targets with improved voltage performance and methods thereby
EP3951004A4 (en) * 2019-03-26 2022-12-14 JX Nippon Mining & Metals Corporation Niobium sputtering target
CN110983218B (zh) * 2019-12-25 2021-09-03 西部超导材料科技股份有限公司 一种组织均匀的小规格纯铌棒材的制备方法
CN112143990B (zh) * 2020-09-04 2022-01-07 中国航发北京航空材料研究院 一种钛合金β相大尺寸单晶的制备方法
CN116288091A (zh) * 2023-03-28 2023-06-23 南昌大学 一种低温制备超细晶粒钽片的退火工艺
TW202540463A (zh) * 2023-12-05 2025-10-16 美商塔沙Ｓｍｄ公司 具有改善的性能及可預測性之鉭濺射靶及其製造方法

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JPH01180942A (ja) * 1988-01-13 1989-07-18 Toshiba Corp 高断熱性鋳鉄
JPH049467A (ja) * 1990-04-27 1992-01-14 Nippon Light Metal Co Ltd 耐食皮膜用Ａｌ―Ｎｉ―Ｓｉ合金製スパッタリングターゲット
JPH06264233A (ja) * 1993-03-12 1994-09-20 Nikko Kinzoku Kk Ｔｆｔ製造用スパッタリングタ−ゲット
JPH10235670A (ja) * 1997-02-26 1998-09-08 Tosoh Corp ポリオレフィン樹脂連続気泡発泡体の製造方法
WO2000031310A1 (en) * 1998-11-25 2000-06-02 Cabot Corporation High purity tantalum and products containing the same like sputter targets
JP2000234167A (ja) * 1999-02-10 2000-08-29 Tokyo Tungsten Co Ltd Ｍｏスパッターリングターゲット材及びその製造方法
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles

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Publication number Priority date Publication date Assignee Title
JPH01180942A (ja) * 1988-01-13 1989-07-18 Toshiba Corp 高断熱性鋳鉄
JPH049467A (ja) * 1990-04-27 1992-01-14 Nippon Light Metal Co Ltd 耐食皮膜用Ａｌ―Ｎｉ―Ｓｉ合金製スパッタリングターゲット
JPH06264233A (ja) * 1993-03-12 1994-09-20 Nikko Kinzoku Kk Ｔｆｔ製造用スパッタリングタ−ゲット
JPH10235670A (ja) * 1997-02-26 1998-09-08 Tosoh Corp ポリオレフィン樹脂連続気泡発泡体の製造方法
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
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US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture

Also Published As

Publication number Publication date
MXPA03007490A (es) 2004-09-06
KR20030090645A (ko) 2003-11-28
EP1366203A4 (en) 2004-07-28
NO20033547D0 (no) 2003-08-11
CZ20032246A3 (cs) 2004-03-17
IL157279A0 (en) 2004-02-19
NO20033547L (no) 2003-09-26
JP4327460B2 (ja) 2009-09-09
ZA200306399B (en) 2004-08-18
DE60214683D1 (de) 2006-10-26
CA2438819A1 (en) 2002-09-12
WO2002070765A1 (en) 2002-09-12
HK1066833A1 (zh) 2005-04-01
ATE339532T1 (de) 2006-10-15
CN1238547C (zh) 2006-01-25
HUP0303269A2 (hu) 2004-01-28
EP1366203B1 (en) 2006-09-13
JP2004526863A (ja) 2004-09-02
CN1535322A (zh) 2004-10-06
AU2002257005B2 (en) 2007-05-31
CN1789476A (zh) 2006-06-21
ES2272707T3 (es) 2007-05-01
DE60214683T2 (de) 2007-09-13
PT1366203E (pt) 2006-12-29
NZ527628A (en) 2004-07-30
HUP0303269A3 (en) 2004-05-28
EP1366203A1 (en) 2003-12-03
US20020112789A1 (en) 2002-08-22
BR0207384A (pt) 2004-02-10

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