CN1762056B - 具有拉伸应变基片的半导体及其制备方法 - Google Patents

具有拉伸应变基片的半导体及其制备方法 Download PDF

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Publication number
CN1762056B
CN1762056B CN2004800074546A CN200480007454A CN1762056B CN 1762056 B CN1762056 B CN 1762056B CN 2004800074546 A CN2004800074546 A CN 2004800074546A CN 200480007454 A CN200480007454 A CN 200480007454A CN 1762056 B CN1762056 B CN 1762056B
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China
Prior art keywords
layer
silicon
silicon layer
gate
etch stop
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Chinese (zh)
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CN1762056A (zh
Inventor
M-V·努
P·R·贝塞尔
林明仁
汪海宏
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
CN2004800074546A 2003-01-17 2004-01-13 具有拉伸应变基片的半导体及其制备方法 Expired - Lifetime CN1762056B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/346,617 US7001837B2 (en) 2003-01-17 2003-01-17 Semiconductor with tensile strained substrate and method of making the same
US10/346,617 2003-01-17
PCT/US2004/000981 WO2004068586A1 (en) 2003-01-17 2004-01-13 Mosfet device with tensile strained substrate and method of making the same

Publications (2)

Publication Number Publication Date
CN1762056A CN1762056A (zh) 2006-04-19
CN1762056B true CN1762056B (zh) 2011-06-01

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CN2004800074546A Expired - Lifetime CN1762056B (zh) 2003-01-17 2004-01-13 具有拉伸应变基片的半导体及其制备方法

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Country Link
US (2) US7001837B2 (enExample)
JP (1) JP2006517343A (enExample)
KR (1) KR101023208B1 (enExample)
CN (1) CN1762056B (enExample)
DE (1) DE112004000146B4 (enExample)
GB (1) GB2411768B (enExample)
WO (1) WO2004068586A1 (enExample)

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Also Published As

Publication number Publication date
KR101023208B1 (ko) 2011-03-18
GB2411768A (en) 2005-09-07
US7701019B2 (en) 2010-04-20
US20040142545A1 (en) 2004-07-22
DE112004000146T5 (de) 2006-02-02
KR20050086961A (ko) 2005-08-30
US20060138479A1 (en) 2006-06-29
JP2006517343A (ja) 2006-07-20
US7001837B2 (en) 2006-02-21
CN1762056A (zh) 2006-04-19
GB0512330D0 (en) 2005-07-27
WO2004068586A1 (en) 2004-08-12
DE112004000146B4 (de) 2010-05-06
GB2411768B (en) 2006-04-26

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Granted publication date: 20110601