CN1749851B - 掩模板提供系统，掩模板、掩模板透明基片的制造方法 - Google Patents

掩模板提供系统，掩模板、掩模板透明基片的制造方法 Download PDF

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Publication number
CN1749851B
CN1749851B CN2005101039885A CN200510103988A CN1749851B CN 1749851 B CN1749851 B CN 1749851B CN 2005101039885 A CN2005101039885 A CN 2005101039885A CN 200510103988 A CN200510103988 A CN 200510103988A CN 1749851 B CN1749851 B CN 1749851B
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China
Prior art keywords
mask plate
mask
transparent substrate
substrate
optical characteristics
Prior art date
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CN2005101039885A
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English (en)
Chinese (zh)
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CN1749851A (zh
Inventor
铃木修
赤川裕之
田边胜
川口厚
石桥直纯
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Hoya Corp
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Hoya Corp
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Publication of CN1749851A publication Critical patent/CN1749851A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31616—Next to polyester [e.g., alkyd]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN2005101039885A 2004-09-16 2005-09-16 掩模板提供系统，掩模板、掩模板透明基片的制造方法 Active CN1749851B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004269569 2004-09-16
JP2004269569A JP4520263B2 (ja) 2004-09-16 2004-09-16 マスクブランク提供システム、マスクブランク提供方法、マスクブランク用透明基板の製造方法、マスクブランクの製造方法及びマスクの製造方法
JP2004-269569 2004-09-16

Related Child Applications (1)

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CN201010203212.1A Division CN101846877B (zh) 2004-09-16 2005-09-16 掩模板制造方法、掩模制造方法、掩模板透明基片制造方法

Publications (2)

Publication Number Publication Date
CN1749851A CN1749851A (zh) 2006-03-22
CN1749851B true CN1749851B (zh) 2010-07-14

Family

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CN2005101039885A Active CN1749851B (zh) 2004-09-16 2005-09-16 掩模板提供系统，掩模板、掩模板透明基片的制造方法
CN201010203212.1A Active CN101846877B (zh) 2004-09-16 2005-09-16 掩模板制造方法、掩模制造方法、掩模板透明基片制造方法

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CN201010203212.1A Active CN101846877B (zh) 2004-09-16 2005-09-16 掩模板制造方法、掩模制造方法、掩模板透明基片制造方法

Country Status (5)

Country Link
US (3) US7700244B2 (ja)
JP (1) JP4520263B2 (ja)
KR (1) KR101093406B1 (ja)
CN (2) CN1749851B (ja)
TW (1) TWI275900B (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5180433B2 (ja) * 2004-11-08 2013-04-10 Ｈｏｙａ株式会社 マスクブランクの製造方法、マスクの製造方法、及び、マスクブランクの再生方法
CN100595671C (zh) * 2004-11-08 2010-03-24 Hoya株式会社 掩模坯件的制造方法
US20060218204A1 (en) * 2005-03-25 2006-09-28 International Business Machines Corporation Log stream validation in log shipping data replication systems
JP4961990B2 (ja) * 2005-12-14 2012-06-27 大日本印刷株式会社 マスクブランクおよび階調マスク
KR100744660B1 (ko) 2006-05-04 2007-08-02 주식회사 하이닉스반도체 사진 공정 관리 시스템 및 방법
JP4853684B2 (ja) * 2009-03-31 2012-01-11 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
CN106502045B (zh) 2016-10-31 2019-09-27 京东方科技集团股份有限公司 用于设备的方法、制造掩膜版或显示基板的方法及系统
KR20180072036A (ko) * 2016-12-20 2018-06-29 삼성전자주식회사 마스크 처리 장치 및 방법
CN109239953B (zh) * 2018-11-07 2021-03-05 成都中电熊猫显示科技有限公司 掩膜版的处理系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1351721A (zh) * 1999-05-20 2002-05-29 麦克隆尼克激光系统有限公司 在平版印刷中用于减少误差的方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203383A (ja) 1985-02-26 1986-09-09 ホ−ヤ株式会社 基板保持構造
JP3071362B2 (ja) 1994-07-15 2000-07-31 信越化学工業株式会社 ＡｒＦエキシマレーザリソグラフィー用合成石英マスク基板およびその製造方法
JP3673626B2 (ja) * 1997-10-24 2005-07-20 Ｈｏｙａ株式会社 透光性物質の不均一性検査方法及びその装置
JP4170569B2 (ja) * 2000-06-02 2008-10-22 大日本印刷株式会社 基板選択装置
JP2002090978A (ja) * 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置
JP3608654B2 (ja) * 2000-09-12 2005-01-12 Ｈｏｙａ株式会社 位相シフトマスクブランク、位相シフトマスク
JP3993005B2 (ja) 2002-03-22 2007-10-17 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク、ハーフトーン型位相シフトマスク及びその製造方法、並びにパターン転写方法
JP4334778B2 (ja) * 2001-03-21 2009-09-30 大日本印刷株式会社 基板選択装置および描画用基板の供給方法
JP2003081654A (ja) 2001-09-06 2003-03-19 Toshiba Ceramics Co Ltd 合成石英ガラスおよびその製造方法
JP3934919B2 (ja) * 2001-11-13 2007-06-20 株式会社東芝 マスクブランクスの選択方法、露光マスクの形成方法、および半導体装置の製造方法
JP2003248299A (ja) * 2002-02-26 2003-09-05 Toshiba Corp マスク基板およびその製造方法
JP2003264225A (ja) 2002-03-12 2003-09-19 Shin Etsu Polymer Co Ltd ガラス基板収納容器
US7356374B2 (en) * 2002-03-15 2008-04-08 Photronics, Inc. Comprehensive front end method and system for automatically generating and processing photomask orders
JP4187987B2 (ja) * 2002-03-25 2008-11-26 株式会社エヌ・ティ・ティ・データ インスタントメッセージングシステムおよびインスタントメッセージングプログラム
JP2004083377A (ja) 2002-08-29 2004-03-18 Shin Etsu Chem Co Ltd 内部マーキングされた石英ガラス、光学部材用石英ガラス基板及びその製造方法
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
JP2004356330A (ja) * 2003-05-28 2004-12-16 Sony Corp マスクの製造方法、マスクブランクスの管理方法、マスクブランクスの管理プログラム、マスクブランクスの管理装置および半導体装置の製造方法
JP4543671B2 (ja) * 2003-12-16 2010-09-15 凸版印刷株式会社 Ｒｆ−ｉｄ管理によるフォトマスクの製造方法及びそれを用いたフォトマスクの描画方法
JP4503015B2 (ja) * 2004-03-09 2010-07-14 Ｈｏｙａ株式会社 マスクブランク情報習得方法及びシステム、マスクブランク情報提供方法、転写マスク作製支援及び製造方法並びにマスクブランク製造及び提供方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1351721A (zh) * 1999-05-20 2002-05-29 麦克隆尼克激光系统有限公司 在平版印刷中用于减少误差的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2002-162727A 2002.06.07

Also Published As

Publication number Publication date
KR101093406B1 (ko) 2011-12-14
CN1749851A (zh) 2006-03-22
TW200617584A (en) 2006-06-01
CN101846877B (zh) 2014-07-23
JP4520263B2 (ja) 2010-08-04
US7700244B2 (en) 2010-04-20
US20060159931A1 (en) 2006-07-20
US20100173232A1 (en) 2010-07-08
KR20060051339A (ko) 2006-05-19
CN101846877A (zh) 2010-09-29
JP2006084786A (ja) 2006-03-30
US20110262847A1 (en) 2011-10-27
US8318388B2 (en) 2012-11-27
TWI275900B (en) 2007-03-11
US7998644B2 (en) 2011-08-16

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