CN1691336A - 埋置位线非易失浮动栅存储单元、其阵列及其制造方法 - Google Patents

埋置位线非易失浮动栅存储单元、其阵列及其制造方法 Download PDF

Info

Publication number
CN1691336A
CN1691336A CNA2005100550905A CN200510055090A CN1691336A CN 1691336 A CN1691336 A CN 1691336A CN A2005100550905 A CNA2005100550905 A CN A2005100550905A CN 200510055090 A CN200510055090 A CN 200510055090A CN 1691336 A CN1691336 A CN 1691336A
Authority
CN
China
Prior art keywords
region
trench
gate electrode
floating gate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005100550905A
Other languages
English (en)
Chinese (zh)
Inventor
D·李
B·陈
S·基亚尼安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Storage Technology Inc
Original Assignee
Silicon Storage Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/797,296 external-priority patent/US7307308B2/en
Application filed by Silicon Storage Technology Inc filed Critical Silicon Storage Technology Inc
Publication of CN1691336A publication Critical patent/CN1691336A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CNA2005100550905A 2004-03-09 2005-03-08 埋置位线非易失浮动栅存储单元、其阵列及其制造方法 Pending CN1691336A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/797,296 US7307308B2 (en) 2003-04-07 2004-03-09 Buried bit line non-volatile floating gate memory cell with independent controllable control gate in a trench, and array thereof, and method of formation
US10/797296 2004-03-09

Publications (1)

Publication Number Publication Date
CN1691336A true CN1691336A (zh) 2005-11-02

Family

ID=35085603

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005100550905A Pending CN1691336A (zh) 2004-03-09 2005-03-08 埋置位线非易失浮动栅存储单元、其阵列及其制造方法

Country Status (4)

Country Link
JP (1) JP2005260235A (enExample)
KR (1) KR20060043534A (enExample)
CN (1) CN1691336A (enExample)
TW (1) TW200601461A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110010606A (zh) * 2018-01-05 2019-07-12 硅存储技术公司 衬底沟槽中具有浮栅的双位非易失性存储器单元

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293204B2 (en) * 2013-04-16 2016-03-22 Silicon Storage Technology, Inc. Non-volatile memory cell with self aligned floating and erase gates, and method of making same
WO2025074208A1 (ja) * 2023-10-04 2025-04-10 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868629A (en) * 1984-05-15 1989-09-19 Waferscale Integration, Inc. Self-aligned split gate EPROM
IT1227989B (it) * 1988-12-05 1991-05-20 Sgs Thomson Microelectronics Matrice di celle di memoria eprom con struttura a tovaglia con migliorato rapporto capacitivo e processo per la sua fabbricazione
US5278439A (en) * 1991-08-29 1994-01-11 Ma Yueh Y Self-aligned dual-bit split gate (DSG) flash EEPROM cell
ATE238609T1 (de) * 1991-08-29 2003-05-15 Hyundai Electronics Ind Selbstjustierende flash-eeprom-zelle mit doppelbit-geteiltem gat
JPH05211338A (ja) * 1991-10-09 1993-08-20 Mitsubishi Electric Corp 不揮発性半導体装置
JP3403877B2 (ja) * 1995-10-25 2003-05-06 三菱電機株式会社 半導体記憶装置とその製造方法
US5963806A (en) * 1996-12-09 1999-10-05 Mosel Vitelic, Inc. Method of forming memory cell with built-in erasure feature
US6952034B2 (en) * 2002-04-05 2005-10-04 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with buried source line and floating gate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110010606A (zh) * 2018-01-05 2019-07-12 硅存储技术公司 衬底沟槽中具有浮栅的双位非易失性存储器单元
CN110010606B (zh) * 2018-01-05 2023-04-07 硅存储技术公司 衬底沟槽中具有浮栅的双位非易失性存储器单元

Also Published As

Publication number Publication date
KR20060043534A (ko) 2006-05-15
JP2005260235A (ja) 2005-09-22
TW200601461A (en) 2006-01-01

Similar Documents

Publication Publication Date Title
US7307308B2 (en) Buried bit line non-volatile floating gate memory cell with independent controllable control gate in a trench, and array thereof, and method of formation
CN1249808C (zh) 非易失内存单元及制造方法
TWI409854B (zh) 在溝渠中包括水平第一閘極與垂直第二閘極之分離閘極儲存裝置
CN1286182C (zh) 大规模集成半导体存储器和制造该半导体存储器的方法
CN101174652B (zh) 自对准方法及用该方法制造的存储器阵列
JP5576400B2 (ja) フラッシュ・メモリ・デバイスおよびその製造方法
CN100440514C (zh) 非易失浮栅存储单元及其阵列以及其形成方法
US7602010B2 (en) Multi-bit multi-level non-volatile memory device and methods of operating and fabricating the same
CN1855511A (zh) 具有电荷捕获存储单元的半导体存储器及其制造方法
TW200406040A (en) Floating gate memory fabrication methods comprising a field dielectric etch with a horizontal etch component
WO2014172433A1 (en) Non-volatile memory cell with self aligned floating and erase gates, and method of making same
CN1581492A (zh) 具纳米晶体或纳米点之存储单元
US7190018B2 (en) Bi-directional read/program non-volatile floating gate memory cell with independent controllable control gates, and array thereof, and method of formation
TWI784724B (zh) 具有設置在字線閘上方之抹除閘的分離閘2位元非揮發性記憶體單元及其製造方法
US6936883B2 (en) Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation
JP2002141425A (ja) フラッシュ・メモリセル性能を改良するための側壁プロセス
US20240114689A1 (en) Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors formed with an oxide semiconductor channel
JP2004056071A (ja) 半導体素子の製造方法及びその素子
WO2021002892A1 (en) Method of forming split-gate flash memory cell with spacer defined floating gate and discretely formed polysilicon gates
KR20000076852A (ko) 반도체 기억장치 및 그 제조방법
CN1691336A (zh) 埋置位线非易失浮动栅存储单元、其阵列及其制造方法
CN1641861A (zh) 将电子编程到非易失性存储单元浮栅上的改进方法
KR20060062791A (ko) 비휘발성 메모리 소자 및 그 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication