CN1684269A - 固态图像传感器 - Google Patents
固态图像传感器 Download PDFInfo
- Publication number
- CN1684269A CN1684269A CNA2005100652665A CN200510065266A CN1684269A CN 1684269 A CN1684269 A CN 1684269A CN A2005100652665 A CNA2005100652665 A CN A2005100652665A CN 200510065266 A CN200510065266 A CN 200510065266A CN 1684269 A CN1684269 A CN 1684269A
- Authority
- CN
- China
- Prior art keywords
- subdivision
- substrate
- impurity
- impurity concentration
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims abstract description 134
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 58
- 230000032258 transport Effects 0.000 claims description 13
- 239000007787 solid Substances 0.000 claims description 12
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 25
- 230000004048 modification Effects 0.000 description 19
- 238000012986 modification Methods 0.000 description 19
- 241000519995 Stachys sylvatica Species 0.000 description 15
- 230000005284 excitation Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02B—HYDRAULIC ENGINEERING
- E02B3/00—Engineering works in connection with control or use of streams, rivers, coasts, or other marine sites; Sealings or joints for engineering works in general
- E02B3/04—Structures or apparatus for, or methods of, protecting banks, coasts, or harbours
- E02B3/10—Dams; Dykes; Sluice ways or other structures for dykes, dams, or the like
- E02B3/102—Permanently installed raisable dykes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Ocean & Marine Engineering (AREA)
- Mechanical Engineering (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP121849/04 | 2004-04-16 | ||
JP2004121849A JP3727639B2 (ja) | 2004-04-16 | 2004-04-16 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1684269A true CN1684269A (zh) | 2005-10-19 |
CN100407434C CN100407434C (zh) | 2008-07-30 |
Family
ID=35095397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100652665A Expired - Fee Related CN100407434C (zh) | 2004-04-16 | 2005-04-15 | 固态图像传感器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7015522B2 (zh) |
JP (1) | JP3727639B2 (zh) |
KR (1) | KR100683304B1 (zh) |
CN (1) | CN100407434C (zh) |
TW (1) | TWI263330B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104769708A (zh) * | 2012-11-06 | 2015-07-08 | 株式会社电装 | 半导体装置 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7153719B2 (en) * | 2004-08-24 | 2006-12-26 | Micron Technology, Inc. | Method of fabricating a storage gate pixel design |
JP2006237415A (ja) * | 2005-02-28 | 2006-09-07 | Sanyo Electric Co Ltd | 固体撮像装置 |
JP4354931B2 (ja) * | 2005-05-19 | 2009-10-28 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
KR100699849B1 (ko) * | 2005-06-21 | 2007-03-27 | 삼성전자주식회사 | 국부적인 불순물 영역을 갖는 cmos 이미지 소자 및 그제조방법 |
JP2008277512A (ja) * | 2007-04-27 | 2008-11-13 | Fujifilm Corp | 撮像素子及び光電変換素子アレイ |
JP5063223B2 (ja) * | 2007-07-02 | 2012-10-31 | キヤノン株式会社 | 光電変換装置及び撮像システム |
JP4991418B2 (ja) * | 2007-07-06 | 2012-08-01 | 株式会社東芝 | 固体撮像装置 |
KR100871798B1 (ko) * | 2007-09-07 | 2008-12-02 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
US8048708B2 (en) * | 2008-06-25 | 2011-11-01 | Micron Technology, Inc. | Method and apparatus providing an imager module with a permanent carrier |
JP4798205B2 (ja) | 2008-10-23 | 2011-10-19 | ソニー株式会社 | 固体撮像装置とその製造方法、及び撮像装置 |
FR2955700B1 (fr) * | 2010-01-28 | 2012-08-17 | St Microelectronics Crolles 2 | Photodiode de capteur d'image |
JP5195864B2 (ja) * | 2010-10-13 | 2013-05-15 | ソニー株式会社 | 固体撮像装置とその製造方法、及び撮像装置 |
KR101867488B1 (ko) * | 2012-01-10 | 2018-06-14 | 삼성전자주식회사 | 이미지 센서 |
FR2986906B1 (fr) * | 2012-02-15 | 2015-06-19 | New Imaging Technologies Sas | Structure de pixel actif a transfert de charge ameliore |
WO2014002365A1 (ja) * | 2012-06-26 | 2014-01-03 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
JP6609948B2 (ja) * | 2015-03-19 | 2019-11-27 | セイコーエプソン株式会社 | 固体撮像素子及びその製造方法 |
JP6668600B2 (ja) * | 2015-03-19 | 2020-03-18 | セイコーエプソン株式会社 | 固体撮像素子及びその製造方法 |
JP2016178145A (ja) * | 2015-03-19 | 2016-10-06 | セイコーエプソン株式会社 | 固体撮像素子及びその製造方法 |
JP6780206B2 (ja) * | 2016-04-28 | 2020-11-04 | 国立大学法人静岡大学 | 絶縁ゲート型半導体素子及び固体撮像装置 |
KR102478607B1 (ko) | 2018-03-27 | 2022-12-16 | 삼성전자주식회사 | 전자 장치 및 그 동작방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2575907B2 (ja) | 1989-12-28 | 1997-01-29 | 株式会社東芝 | 固体撮像装置とその製造方法 |
JPH09232555A (ja) * | 1996-02-21 | 1997-09-05 | Sony Corp | イメージセンサ |
JP3576033B2 (ja) | 1999-03-31 | 2004-10-13 | 株式会社東芝 | 固体撮像装置 |
JP3723124B2 (ja) | 2001-12-14 | 2005-12-07 | 株式会社東芝 | 固体撮像装置 |
-
2004
- 2004-04-16 JP JP2004121849A patent/JP3727639B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-06 US US11/099,629 patent/US7015522B2/en active Active
- 2005-04-07 TW TW094110980A patent/TWI263330B/zh not_active IP Right Cessation
- 2005-04-14 KR KR1020050031087A patent/KR100683304B1/ko not_active IP Right Cessation
- 2005-04-15 CN CN2005100652665A patent/CN100407434C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104769708A (zh) * | 2012-11-06 | 2015-07-08 | 株式会社电装 | 半导体装置 |
CN104769708B (zh) * | 2012-11-06 | 2017-04-26 | 株式会社电装 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI263330B (en) | 2006-10-01 |
KR20060045713A (ko) | 2006-05-17 |
KR100683304B1 (ko) | 2007-02-15 |
JP2005310826A (ja) | 2005-11-04 |
TW200601556A (en) | 2006-01-01 |
JP3727639B2 (ja) | 2005-12-14 |
US20050230720A1 (en) | 2005-10-20 |
US7015522B2 (en) | 2006-03-21 |
CN100407434C (zh) | 2008-07-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1684269A (zh) | 固态图像传感器 | |
CN100592527C (zh) | 半导体成像器件及其制造方法 | |
CN1266773C (zh) | 固体摄象装置和用固体摄象装置的摄象机系统 | |
CN1156011C (zh) | 固态成像器件及其制造方法和固态成像系统 | |
CN1716628A (zh) | 固态成像装置、相机及制造固态成像装置的方法 | |
CN1897289A (zh) | 图像传感器及其制造方法 | |
CN1627524A (zh) | 光电变换装置及其制造方法和摄像系统 | |
CN1828919A (zh) | 传感器阵列 | |
CN1835245A (zh) | 嵌有光电二极管区的图像传感器及其制造方法 | |
CN1527394A (zh) | 固体摄像器件、制造方法及行间传递型ccd图像传感器 | |
CN1652344A (zh) | N-型衬底上的图像传感器 | |
CN1812112A (zh) | 具有非平面晶体管的固态图像传感器设备及其制造方法 | |
CN1992224A (zh) | 互补金属氧化物半导体图像传感器的制造方法 | |
CN1716621A (zh) | 阈值电压调制图像传感器 | |
CN1819225A (zh) | Cmos图像传感器及其制造方法 | |
CN1885551A (zh) | 半导体集成电路器件及其制备方法 | |
CN1571163A (zh) | 固态图像拾取装置及其制造方法 | |
CN1992321A (zh) | Cmos图像传感器及其制造方法 | |
US9723232B2 (en) | Solid-state image sensor | |
CN101060128A (zh) | 固体摄像装置 | |
CN1638134A (zh) | 固态图像拾取装置 | |
US6593607B1 (en) | Image sensor with enhanced blue response and signal cross-talk suppression | |
CN1929146A (zh) | 固体摄像装置及其制造方法 | |
CN1716625A (zh) | Cmos图像传感器及其制造方法 | |
CN1132252C (zh) | 固体摄象器件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: KELAIBO INNOVATION CO., LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20141203 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20141203 Address after: American California Patentee after: Craib Innovations Ltd Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080730 Termination date: 20160415 |