CN1668716A - 可光固化的粘合剂组合物及其具有低卤离子含量的反应产物 - Google Patents
可光固化的粘合剂组合物及其具有低卤离子含量的反应产物 Download PDFInfo
- Publication number
- CN1668716A CN1668716A CNA038171414A CN03817141A CN1668716A CN 1668716 A CN1668716 A CN 1668716A CN A038171414 A CNA038171414 A CN A038171414A CN 03817141 A CN03817141 A CN 03817141A CN 1668716 A CN1668716 A CN 1668716A
- Authority
- CN
- China
- Prior art keywords
- composition
- gegenion
- halogen
- chip
- exist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 94
- 239000007795 chemical reaction product Substances 0.000 title claims abstract description 14
- 239000000853 adhesive Substances 0.000 title abstract description 4
- 230000001070 adhesive effect Effects 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 29
- -1 halogen ion Chemical class 0.000 claims description 39
- 125000002091 cationic group Chemical group 0.000 claims description 33
- 239000003999 initiator Substances 0.000 claims description 31
- 229910052736 halogen Inorganic materials 0.000 claims description 27
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 26
- 239000003504 photosensitizing agent Substances 0.000 claims description 26
- 238000001228 spectrum Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 229920000647 polyepoxide Polymers 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 239000003822 epoxy resin Substances 0.000 claims description 11
- 150000002367 halogens Chemical class 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 10
- 125000005843 halogen group Chemical group 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 9
- XKZQKPRCPNGNFR-UHFFFAOYSA-N 2-(3-hydroxyphenyl)phenol Chemical compound OC1=CC=CC(C=2C(=CC=CC=2)O)=C1 XKZQKPRCPNGNFR-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 8
- 239000004615 ingredient Substances 0.000 claims description 8
- 239000012764 mineral filler Substances 0.000 claims description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 8
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims description 8
- 239000002966 varnish Substances 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 235000013824 polyphenols Nutrition 0.000 claims description 6
- 239000000284 extract Substances 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 239000000047 product Substances 0.000 claims description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229920001568 phenolic resin Polymers 0.000 claims description 4
- 239000005011 phenolic resin Substances 0.000 claims description 4
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 claims description 4
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001896 cresols Chemical class 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- QTKIQLNGOKOPOE-UHFFFAOYSA-N 1,1'-biphenyl;propane Chemical compound CCC.C1=CC=CC=C1C1=CC=CC=C1 QTKIQLNGOKOPOE-UHFFFAOYSA-N 0.000 claims description 2
- DXBHBZVCASKNBY-UHFFFAOYSA-N 1,2-Benz(a)anthracene Chemical compound C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 DXBHBZVCASKNBY-UHFFFAOYSA-N 0.000 claims description 2
- BUZMJVBOGDBMGI-UHFFFAOYSA-N 1-phenylpropylbenzene Chemical compound C=1C=CC=CC=1C(CC)C1=CC=CC=C1 BUZMJVBOGDBMGI-UHFFFAOYSA-N 0.000 claims description 2
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 claims description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 claims description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 claims description 2
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 claims description 2
- 125000002947 alkylene group Chemical group 0.000 claims description 2
- 150000001642 boronic acid derivatives Chemical class 0.000 claims description 2
- 238000005660 chlorination reaction Methods 0.000 claims description 2
- 238000009833 condensation Methods 0.000 claims description 2
- 230000005494 condensation Effects 0.000 claims description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N dimethylmethane Natural products CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 2
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 claims description 2
- 230000032050 esterification Effects 0.000 claims description 2
- 238000005886 esterification reaction Methods 0.000 claims description 2
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 230000026030 halogenation Effects 0.000 claims description 2
- 238000005658 halogenation reaction Methods 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 claims description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims description 2
- 150000008442 polyphenolic compounds Chemical class 0.000 claims description 2
- 239000001294 propane Substances 0.000 claims description 2
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 claims description 2
- 150000001721 carbon Chemical group 0.000 claims 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims 2
- 239000004842 bisphenol F epoxy resin Substances 0.000 claims 1
- 230000005670 electromagnetic radiation Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 230000035939 shock Effects 0.000 abstract description 2
- 239000000356 contaminant Substances 0.000 abstract 1
- 239000008393 encapsulating agent Substances 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 description 48
- 238000005538 encapsulation Methods 0.000 description 39
- 239000004593 Epoxy Substances 0.000 description 23
- 150000001875 compounds Chemical class 0.000 description 16
- 239000002253 acid Substances 0.000 description 15
- 229910052740 iodine Inorganic materials 0.000 description 14
- 239000011630 iodine Substances 0.000 description 14
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 13
- 238000001723 curing Methods 0.000 description 11
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 description 11
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 10
- 239000004327 boric acid Substances 0.000 description 10
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229910018286 SbF 6 Inorganic materials 0.000 description 5
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical group [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 238000009998 heat setting Methods 0.000 description 5
- MBAKFIZHTUAVJN-UHFFFAOYSA-I hexafluoroantimony(1-);hydron Chemical compound F.F[Sb](F)(F)(F)F MBAKFIZHTUAVJN-UHFFFAOYSA-I 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium group Chemical group [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 5
- OVSKIKFHRZPJSS-UHFFFAOYSA-N 2,4-D Chemical compound OC(=O)COC1=CC=C(Cl)C=C1Cl OVSKIKFHRZPJSS-UHFFFAOYSA-N 0.000 description 4
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000011231 conductive filler Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- MNAHQWDCXOHBHK-UHFFFAOYSA-N 1-phenylpropane-1,1-diol Chemical compound CCC(O)(O)C1=CC=CC=C1 MNAHQWDCXOHBHK-UHFFFAOYSA-N 0.000 description 2
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- 239000005749 Copper compound Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004902 Softening Agent Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001880 copper compounds Chemical class 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000002186 photoactivation Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 description 1
- YNSNJGRCQCDRDM-UHFFFAOYSA-N 1-chlorothioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl YNSNJGRCQCDRDM-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- YXALYBMHAYZKAP-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 7-oxabicyclo[4.1.0]heptane-4-carboxylate Chemical compound C1CC2OC2CC1C(=O)OCC1CC2OC2CC1 YXALYBMHAYZKAP-UHFFFAOYSA-N 0.000 description 1
- 229910017008 AsF 6 Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 208000035126 Facies Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- IDSLNGDJQFVDPQ-UHFFFAOYSA-N bis(7-oxabicyclo[4.1.0]heptan-4-yl) hexanedioate Chemical compound C1CC2OC2CC1OC(=O)CCCCC(=O)OC1CC2OC2CC1 IDSLNGDJQFVDPQ-UHFFFAOYSA-N 0.000 description 1
- XZKRXPZXQLARHH-UHFFFAOYSA-N buta-1,3-dienylbenzene Chemical compound C=CC=CC1=CC=CC=C1 XZKRXPZXQLARHH-UHFFFAOYSA-N 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- WNLRTRBMVRJNCN-UHFFFAOYSA-N hexanedioic acid Natural products OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 125000002346 iodo group Chemical group I* 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000006254 rheological additive Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- SEAZOECJMOZWTD-UHFFFAOYSA-N trimethoxy(oxiran-2-ylmethyl)silane Chemical compound CO[Si](OC)(OC)CC1CO1 SEAZOECJMOZWTD-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07745—Mounting details of integrated circuit chips
- G06K19/07747—Mounting details of integrated circuit chips at least one of the integrated circuit chips being mounted as a module
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/24—Di-epoxy compounds carbocyclic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/02—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the selection of materials, e.g. to avoid wear during transport through the machine
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07745—Mounting details of integrated circuit chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01037—Rubidium [Rb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Epoxy Resins (AREA)
- Credit Cards Or The Like (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
本发明涉及可光固化的组合物,该组合物用作包封剂,用于未充满或连接粘合剂,其能够在大于290nm的波长下固化。这些可光固化组合物的反应产物具有低水平的可抽出卤离子,如小于100ppm。在使用中,例如可以在导线接头上施用可固化的组合物,该导线接头将半导体器件电连接到衬底上以保持固定的位置关系和保护电连接的整体性免受振动和震动扰动的影响,以及免受环境污染物的干扰。
Description
发明领域
本发明涉及可光固化的组合物,该组合物用作包封剂,用于未充满或连接粘合剂,能够在大于290nm的波长下固化。这些可光固化组合物的反应产物具有低水平的可抽出卤离子,如小于100ppm和时常小于70ppm。在使用中,例如可以在导线接头上施用可光固化的组合物,该导线接头将半导体器件电连接到衬底以保持固定的位置关系和保护电连接的整体性免受振动和震动扰动的影响,以及免受环境污染物的干扰。
相关技术简述
集成电路组件典型地包括衬底,该衬底形成集成电路芯片的物理和结构基础,该集成电路芯片自身电连接到衬底上的接合片以允许在芯片和外部器件之间的通讯。
在智能卡应用中,将集成电路模块布置在塑料卡中,该塑料卡的尺寸和形状相似于通常的信用卡或借方卡。集成电路模块自身包括微控制器和存储设备,如足够大小的EPROM以存储大量信息,如个人信息,病史信息,金融信息,安全信息,经常飞行员英里数信息等。智能卡也可以具有存储货币价值的电话卡形式操作,该价值由每次交易更新。
迄今为止,智能卡包括塑料卡,在其中磨出凹坑或空腔,设计该凹坑或空腔的尺寸和布置以接收集成电路模块。集成电路模块由芯片构成,该芯片布置在衬底上并与金或铝导线接头电连接。导线接头典型地从芯片垂直升起并弯曲到衬底上的接合片(参见图1)。
为保护导线接头以免断裂或受环境损害,通常在其上施用包封剂。包封剂用于原位密封导线接头,提供抗震动(它可能导致断裂)的缓冲作用和防止环境污染物的侵入,该环境污染物可能引起电断开。
在智能卡组装期间施用包封剂的一种方式是由所谓的两步″堤坝和填充″方案。在此,首先从低粘度包封剂的高度增稠变体浇铸堤坝,在要密封的器件周围形成壁。或者,器件可以由预模塑的壁构成或简单地包含在空腔中,该空腔已经机械加工或制造成板。
参见如M.M.Konarski和J.Heaton,″电子封装设计进展微型化″,
Circ.Assembly,32-35(1996年8月)。
通常将包封剂设计为具有高流动特性,并通过高填料加载,以通过电连接导线接头在很大程度上匹配所要连接到的载体衬底和半导体器件的热膨胀系数(″CTE″)。高流动特性—低粘度—允许在超细孔距导线接头连接中和其周围容易渗透。
一旦固化,这些包封剂应当提供高水平的器件可靠性。
早先使智能卡包封剂可通过热固化机理固化。即,包封剂组合物的施用之后,通过对高温条件,如约100℃曝露一定时间,如约16小时而发生固化。这通常通过在线通入加热室而达到。此类产品可购自Dexter Electronic Materials,City of Industry,加利福尼亚。
U.S.专利No.5,863,970(Ghoshal)提到可热固化的硅氧烷基环氧树脂和非硅氧烷基环氧树脂,填料,碘鎓盐固化催化剂和铜化合物助固化催化剂,它们用于电子器件组件,如芯片连接粘合剂和包封剂,如未充满和团块顶部施加。更具体地,Ghoshal要求保护填充的树脂组合物,该组合物的组分要求环脂族环氧官能硅氧烷,二环氧如己二酸双(3,4-环氧环己基酯),反荷离子可以是五氟四苯基硼酸根B(C6F5)4的碘鎓盐,非必要的铜化合物,以降低热固化该组合物所需的温度,硅烷基粘合促进剂和聚丁二烯弹性体增韧剂。
可是这样的热固化包封剂存在缺点。例如,热固化步骤可能由于热曝露而危害总体电子器件和/或衬底的整体性。此外,热固化步骤在制造产量中显示出间断性和拖累,特别是考虑到要求的加热和冷却,以及在这样受热条件下固化包封剂所要求的时间。另外,在热固化步骤中涉及的能量和劳动需求对电子器件,如智能卡的组装增加了成本。
结果是,由于光固化机理通常比热固化机理更快速,并且在不曝露于热固化期间施加的热量的条件下发生,所以存在要发现可光固化包封剂的持续需求。因此,这样的可光固化包封剂的使用最小化了损害总体电子器件和/或衬底的整体性的倾向。
可光固化包封剂,甚至对于智能卡应用,它们自身不是新的。然而,可光固化智能卡包封剂的早期开发呈现缺点--例如,当与水分接触放置时,可以从固化包封剂中抽出的高水平卤离子,如氟离子。许多智能卡制造商相信高水平的这样的离子增加腐蚀的可能性(由于水分吸收,如从大气中吸收或通过误操作引起而形成酸)。对于大多数部分,所存在的这些卤离子来源于阳离子光敏引发剂的反荷离子。
许多已知的阳离子光敏引发剂含有作为反荷离子的亚磷或锑金属配合物,该配合物中每个金属原子带有适当数目的氟原子。尽管这样的光敏引发剂对引发光固化非常有效,但这些光敏引发剂的反荷离子是松散结合的部分,它们可容易地抽出。因此,这些反荷离子易于从使用它们的可固化组合物的反应产物中浸出,和/或水解以在暴露于如来自大气或其它地方的水分的条件下释放卤离子。 在表面安装电子组件连接的上下文中,参见U.S.专利No.4,916,805(Ellrich),它公开了某些含有反荷离子,如PF6 -、BF4 -、AsF6 -和SbF6 -的光敏引发剂。
Rhodia Chemie销售用于硅氧烷基防粘涂料的阳离子光敏引发剂,它的反荷离子包含共价键合到反荷离子的芳族碳原子上的氟原子,如B(C6F5)4。参见国际专利申请PCT/FR97/00566和PCT/FR98/00741。也参见Rhone-Poulenc Chemie的U.S.专利5,550,265(Castellanos),5,668,192(Castellanos),6,147,184(Castellanos),和6,153,661(Castellanos)。
然而,Rhodia Chemie(或Rhone-Poulenc Chemie)未教导,建议或推广用于可光固化粘合剂或包封剂组合物,特别是基于环氧化合物的那些的这样的光敏引发剂,或认识到低水平的氟离子,该氟离子可以从由这样的阳离子光敏引发剂引发形成的反应产物中抽出。Rhodia Chemie报导了可从反应产物中用己烷抽出的硅氧烷为低水平。
参见S.R.Kerr,III,″下一代UV硅氧烷防粘涂料″,
Adh.Age,第26-34页(1996年8月)。
已知的可光固化智能卡包封剂的另一个缺点是设计用以发生固化的波长。即经常用于智能卡构造中的存储设备(或EPROM)对254nm的波长特别敏感。在此波长下,可擦除EPROM。因此,目前的可光固化组合物具有有限的效用,该组合物作为智能卡包封剂销售,但该组合物在这样的波长下固化。
因此,需要特别适用于电子组件封装应用的可光固化组合物,它的反应产物具有低水平的可抽出卤离子,并且该组合物可以设计为可以在大于约290nm的波长下固化。
发明概述
本发明涉及可光固化的组合物,该组合物用作包封剂、未充满或连接粘合剂,该组合物可以设计为在对波长大于约290nm的电磁谱中辐射的曝光时固化并且该组合物的反应产物具有低水平的可抽出卤离子,如小于100ppm和时常小于70ppm。该组合物包括环氧树脂组分,非必要地,光敏剂,和阳离子光敏引发剂,它的反荷离子包括至少一个共价键合到反荷离子的碳原子上的卤原子。非必要地,本发明的组合物可包括粘合促进剂和/或无机填料组分。
本发明也涉及制备这样的组合物的方法,使用这样的组合物的方法,采用这样的组合物的微电子器件的组件,如智能卡,和这样的组合物的反应产物以及组装的微电子元件。
组合物特别适于用作电子组件的包封剂,以及未充满包封剂,嵌铸组合物,芯片连接粘合剂和各向异性导电组合物。
附图简述
图1是其中布置有导线连接的集成电路的智能卡的横截面视图。
发明详述
如上所述,本发明的可光固化组合物特别可用作导线接头的包封剂,该接头将半导体器件电连接到载体衬底上。尽管对于大部分内容,以下将关于它作为包封剂,如用于智能卡组件的包封剂的应用详细描述本发明,但本领域技术人员应当容易认识到存在有本发明的许多改进和变化,使得本发明适用于超出封装范围的应用。在上文和在实施例中提及那些应用中的一些。
该组合物宽范围地包括环氧树脂组分,非必要地,光敏剂组分和阳离子光敏引发剂组分,它的反荷离子包括至少一个共价键合到反荷离子的碳原子上的卤原子。非必要地,该组合物可包括粘合促进剂组分和/或无机填料组分。
本发明的可光固化组合物能够在对波长大于约290nm的电磁谱中辐射的曝光时固化并且该组合物的反应产物具有低水平的可抽出卤离子,如小于100ppm,和时常小于70ppm。
重要的是注意到本发明的组合物可以设计为在大于约290nm的波长下固化。即,在封装预定用于与智能卡组件连接的电子元件的上下文中,在254nm波长(或在254nm的附近区域中)用于光固化该组合物的情况下可能危害EPROM的整体性。
此外,也重要的是注意到,阳离子光敏引发剂的反荷离子上的共价键合卤原子允许,卤离子浸出和/或由于水解而从组合物的反应产物中释放的可能性最小化,如果不是被消除。换言之,结果是观察到低水平的可抽出卤离子。
本发明的环氧树脂组分可包括许多通常的环氧树脂,如具有多官能度的那些。
这样的环氧树脂的例子包括环脂族环氧树脂;C4-C28烷基缩水甘油醚;C2-C28烷基-和烯基-缩水甘油酯;C1-C28烷基-、单-和多-酚缩水甘油醚;如下物质的多缩水甘油醚:焦儿茶酚、间苯二酚、对苯二酚、4,4′-二羟基二苯基甲烷(或双酚F)、4,4′-二羟基-3,3′-二甲基二苯基甲烷、4,4′-二羟基二苯基二甲基甲烷(或双酚A)、4,4′-二羟基二苯基甲基甲烷、4,4′-二羟基二苯基环己烷、4,4′-二羟基-3,3′-二甲基二苯基丙烷、4,4′-二羟基二苯基砜和三(4-羟苯基)甲烷;上述二酚的氯化和溴化产物的多缩水甘油醚;线性酚醛清漆的多缩水甘油醚;通过将二酚的醚酯化获得的二酚的多缩水甘油醚,该二酚的醚通过用二卤代烷烃或二卤素二烷基醚将芳族氢羧酸的盐酯化获得;通过将苯酚和包含至少两个卤素原子的长链卤素链烷烃缩合获得的多酚的多缩水甘油醚;苯酚线性酚醛清漆环氧树脂;甲酚线性酚醛清漆环氧树脂;及其组合。
在此适于使用的市售环氧树脂中有酚类化合物的多缩水甘油基衍生物,如以商品名EPON828、EPON1001、EPON 1009和EPON 1031购自Shell Chemical Co.的那些;以商品名DER331、DER 332、DER 334和DER 542购自Dow Chemical Co.的那些;以商品名GY285购自CibaSpecialty Chemicals的那些;和以商品名BREN-S购自Nippon Kayaku(日本)的那些。其它合适的环氧树脂包括从多元醇等制备的聚环氧化合物和苯酚-甲醛线性酚醛清漆的多缩水甘油基衍生物,它们的后者以商品名DEN431、DEN438和DEN439购自Dow Chemical Company。甲酚类似物也以商品名ECN1235、ECN1273和ECN1299购自Ciba SpecialtyChemicals。购自UCB的环脂族环氧树脂UCB CAT-002也是期望的。SU-8是购自Shell Chemicals(以前为Interez,Inc.)的双酚A类型环氧线性酚醛清漆。此外,各购自UCB Chemicals的UVR-6105和6110(各为3,4-环氧环己基甲基-3,4-环氧环己烷羧酸酯)和UVR-6128[(双-(3,4-环氧环己基)己二酸酯]在此也是期望使用的,其中后者是特别期望的。当然,不同环氧树脂的组合对于在此的使用也是期望的。
在以上说明的环氧树脂中,仅本质上不是碱性以致于淬灭阳离子的那些对于此处的使用是期望的。
作为光敏剂,尽管噻吨酮,如异丙基噻吨酮是期望的,但许多合适的材料可利用。例如,异丙基噻吨酮是合适的选择,如二乙基-噻吨酮(″DETX″)。此外,也可以使用其它噻吨酮,如2-甲基-噻吨酮、2,4-二氯-噻吨酮、2-氯-噻吨酮、2,4-二甲基-噻吨酮、2,4-二乙基-噻吨酮、2,4-二异丙基-噻吨酮。特别适于与阳离子光敏引发剂一起使用的其它光敏剂包括蒽、苝、吩噻嗪、1,2-苯并蒽、晕苯、芘、并四苯。当然也可以使用这些光敏剂的组合。
作为阳离子光敏引发剂,适当的选择包括具有以下结构I中芯阳离子的那些:
其中R1,R2,R3,R4,R5和R5’可以存在或可以不存在,但当不存在时是氢和当存在任何时可单独选自C1-6烷基、C2-6烯基、卤素、羟基和羧基,其中R1,R2和R5在它们所连接的每个芳族环上单独存在最多至5次,和R3和R4在它们所连接的每个芳族环上单独存在最多至4次,n是0-3和m是0-1。
具有结构I中芯阳离子的阳离子光敏引发剂的更具体例子包括由结构
II和
III表示的那些:
此外,适当的阳离子光敏引发剂包括具有结构
IV,
V,和
VI中芯阳离子的那些:
其中对于结构
IV,R6,R7,R8,R9和R10可以存在或可以不存在,但当不存在时是氢和当存在任何时可以单独地选自如1-5个碳原子的烷基、卤素、羟基和羧基,对于结构
V,R6,R7,R8,R9,R10,R6’,R7’,R8’,R9’和R10’可以存在或可以不存在,但当不存在时是氢和当存在任何时可以单独地选自如1-5个碳原子的烷基、卤素、羟基和羧基,和对于结构
VI,R11,R12,R13,R14,R15,R16,R17,R18,R19,R20和R21可以存在或可以不存在,但当不存在时是氢和当存在任何时可以单独地选自如1-5个碳原子的烷基、卤素、羟基和羧基。
含有结构
IV,
V和
VI中芯阳离子的阳离子光敏引发剂的更具体例子包括分别由结构
VII(a)和
VII(b),
VIII和
IX表示的那些:
结构
VII(b)是称为RHODOSIL 2074,购自Rhodia Chemie的光敏引发剂的阳离子部分,该引发剂的化学名称是四(五氟苯基)硼酸甲苯基枯基碘鎓(CAS No.1782 33-72-2)。
阳离子光敏引发剂的例子包括以SARCAT商品名购自Sartomer,Exton,PA的那些,如SARCATK185[六氟磷酸三芳基锍(在碳酸亚丙酯中的50%溶液)];SARCATSR1010[六氟锑酸三芳基锍(在碳酸亚丙酯中的50%溶液)];和SARCATSR1012(六氟锑酸二芳基碘鎓)。此外,以CYRACURE商品名购自Dow(以前为Union Carbide Chemicals)的那些,如UVI-6976(混合六氟锑酸三芳基锍盐);UVI-6992(混合六氟磷酸三芳基锍盐);UVI-6974和UVI-6990也是可用的。采用这些商业阳离子光敏引发剂,阴离子键合的反荷离子,如六氟磷酸根由含有共价键合卤离子,而不是松散键合卤化物的反荷离子交换。例如,卤化四苯基硼酸根是期望的反荷离子,特别是五氟四苯基硼酸根。常规的离子交换化学可用于进行此改变。
在光敏引发剂的芯阳离子是含碘鎓阳离子的情况下,特别期望包括光敏剂。
作为粘合促进剂组分,硅烷,如环脂族硅烷[
如β-3,4-环氧环己基乙基三甲氧基硅烷]以商品名A-186购自OSI,环氧硅烷[如缩水甘油基三甲氧基硅烷(以商品名A-187购自OSI)],和氨基硅烷[如γ-氨基丙基三乙氧基硅烷(以商品名A-1100购自OSI)是期望的。此外,也可以使用三烷氧基甲硅烷基异氰脲酸酯衍生物(如购自OSI的Y-11597)。
典型地,所述组合物包括基于总组合物重量计最多至约98wt%,如约45wt%-约90wt%的数量,例如约35-约80wt%,期望地约60-约75wt%的环氧树脂组分,基于总组合物重量计最多至约5wt%的粘合促进剂组分,基于总组合物重量计最多至约5wt%,如约0.01-约2wt%的阳离子光敏引发剂,和非必要地,基于总组合物重量计量多至约1wt%,如约0.01-约1wt%的光敏剂。当然,依赖于预定用于具体目的的组合物期望的特定性能组,这些数值可在一定程度上变化。这样的变化可以达到而不需本领域技术人员的过度试验。
无机填料组分可用于本发明的组合物中。无机填料组分的包含允许对包封剂CTE的调节,使得它可以更密切匹配它要与其一起使用的衬底和微电子器件。
例如,无机填料组分可经常包括增强性二氧化硅,如熔凝二氧化硅,和可以是未处理的或处理的,使得改变它们的表面的化学性质。事实上可以使用任何增强性熔凝二氧化硅。
特别期望的那些具有低离子浓度并且其粒度相对小(如约12微米,其中值最多至约30微米并低至小于约2微米),如以商品名SILBONDFW300EST购自Quartzwerke,由Sibelco(比利时)提供的Silbond材料。
用作无机填料组分的其它期望的材料包括由如下物质构成或包含如下物质的那些:氧化铝、氮化硅、氮化铝、二氧化硅涂覆的氮化铝和微粉化石英,条件是它们本质上不是碱性的。
导热和/或导电填料也可以包括在本发明的组合物中。这样的填料的例子包括银、金、镍。特别期望的导电填料是金,如金涂覆的聚合物球形式,特别是单分散直径为3um-50um,由Sekisui Chemicals Co.,Ltd(日本)商业提供的那些。
也可以在本发明的组合物中包括增塑剂以改进玻璃化转变温度(″Tg″)和模量,它的例子包括购自Union Carbide的那些,如以商品名TONE Polyol 301和310购得的那些。
此外,流变改进剂,如增稠剂和触变胶,如热解法二氧化硅可以包括在本发明的组合物中。
本发明也提供使用所述的组合物将集成电路,如智能卡模块连接到载体衬底,如花线或智能卡带的方法。更具体地,该方法包括如下步骤:将这样的组合物施用到载体花线或智能卡带上,在其施用之前或之后通过对电磁谱中如波长为200-600nm的辐射的曝光而活化所述组合物到一定的程度,使得保持所需的初始粘合性并在组合物表面上不出现皮层形成,将集成电路布置到电路板上,并通过导线接头建立电互连,和非必要地,在约60-约140℃之间,如约80℃的温度下固化所述组合物。
参考图1,显示智能卡模块组件1的横截面视图,其中载体衬底,如模块载体带2(如玻璃增强的环氧化合物)与接合片3A,3B和3C接触。芯片4布置在接合片3C上和在芯片4和接合片3A和3B之间建立导线连接5。本发明的可光固化包封剂组合物6作为包封剂团块分配在智能卡模块组件1上。
更具体地,将导线连接的半导体芯片组件面朝上结合到智能卡带上,其中五个导线从半导体芯片上的接合点连接到智能卡带连接上的接合片。这些接头和面朝上的导线连接的半导体芯片组件由本发明的包封剂组合物保护免受环境和其它污染物,和机械应力的影响。如所述,可以由团块,或对于更大的器件由堤坝和填充达到封装,该更大器件的导线连成的回路高于更小器件的那些。
本发明的组合物可应用于其它集成电路组件,其中期望在通过光固化工艺的加工期间在芯片和衬底之间保持固定的位置关系,特别地其中存储设备如EPROM包含在组件,如可光固化的各向异性导电的糊剂和可光固化芯片连接材料中。
给出如下实施例以进一步说明本发明,而不希望变窄或背离它的范围。
实施例
实施例1
在此实施例中,制备基于碘鎓芯阳离子(结构
IV)、锍芯阳离子(结构
V)和二茂铁鎓芯阳离子(结构
VI)的某些阳离子光敏引发剂,它们中每个的反荷离子包括至少一个共价键合到反荷离子的碳原子上的卤原子(在此为氟),用于作为智能卡包封剂的评价以证实可以从其反应产物中观察到的低水平卤离子。为了对比的目的,采用带有反荷离子的阳离子光敏引发剂制备智能卡包封剂,该反荷离子具有阴离子方式键合的卤化物。使用带有反荷离子的光敏引发剂制备样品1、3和5,该反荷离子的卤原子是共价键合的,四(五氟苯基)硼酸根反荷离子,而使用带有反荷离子的光敏引发剂制备样品2、4和6,该反荷离子的卤离子是阴离子方式键合物。在下表1a-1c中说明包含所述阳离子光敏引发剂的这些样品的组分。
表1a
样品1-碘鎓B(C6F5)4 | ||
组分 | wt% | |
类型 | 具体化合物 | |
环氧 | 己二酸双(3,4-环氧环己基酯) | 60.47 |
环脂族环氧树脂 | 36.16 | |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 2.85 |
光敏剂 | 异丙基噻吨酮 | 0.02 |
光敏引发剂 | 碘鎓B(C6F5)4 | 0.50(0.52毫摩尔) |
结果(固化配方中F-的ppm)=5.88ppm |
样品2-碘鎓SbF6 | ||
组分 | wt% | |
类型 | 具体化合物 | |
环氧 | 己二酸双(3,4-环氧环己基酯) | 60.82 |
环脂族环氧树脂 | 36.08 | |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 2.82 |
光敏剂 | 异丙基噻吨酮 | 0.02 |
光敏引发剂 | 碘鎓SbF6 | 0.26(0.26毫摩尔) |
结果(固化配方中F-的ppm)=39.20ppm |
在表1a中,样品1的光敏引发剂是四(五氟苯基)硼酸(甲苯基枯基)碘鎓。对于样品2,光敏引发剂是六氟锑酸二苯基碘鎓。
表1b
样品3-锍B(C6F5)4 | ||
组分 | wt% | |
类型 | 具体化合物 | |
环氧 | 己二酸双(3,4-环氧环己基酯) | 56.84 |
环脂族环氧树脂 | 38.32 | |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 2.87 |
光敏引发剂 | 锍B(C6F5)4 | 1.97(2.29毫摩尔) |
结果(固化配方中F-的ppm)=10ppm |
样品4-锍SbF6 | ||
组分 | wt% | |
类型 | 具体化合物 | |
环氧 | 己二酸双(3,4-环氧环己基酯) | 57.42 |
环脂族环氧树脂 | 38.72 | |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 2.90 |
光敏引发剂 | 锍SbF6 | 0.96(2.29毫摩尔) |
结果(固化配方中F-的ppm)=1002ppm |
在表1b中,样品3的光敏引发剂是四(五氟苯基)硼酸二甲基苯基酰基锍,和对于样品4,光敏引发剂是六氟锑酸二甲基苯基酰基锍。
表1c
样品5-二茂铁鎓B(C6F5)4 | ||
组分 | wt% | |
类型 | 具体化合物 | |
环氧 | 己二酸双(3,4-环氧环己基酯) | 57.49 |
环脂族环氧树脂 | 38.31 | |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 2.97 |
光敏引发剂 | 二茂铁鎓B(C6F5)4 | 1.22(1.35毫摩尔) |
结果(固化配方中F-的ppm)=70ppm |
样品6-二茂铁鎓PF6 | ||
组分 | wt% | |
类型 | 具体化合物 | |
环氧 | 己二酸双(3,4-环氧环己基酯) | 57.90 |
环脂族环氧树脂 | 38.58 | |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 3.00 |
光敏引发剂 | 二茂铁鎓PF6 | 0.52(1.35毫摩尔) |
结果(固化配方中F-的ppm)=2234ppm |
在表1c中,对于样品5,光敏引发剂是四(五氟苯基)硼酸二茂铁鎓,和对于样品6,光敏引发剂是以IRGACURE261购自Vantico,Inc的六氟磷酸二茂铁鎓。
在表1a中,采用光敏剂,异丙基噻吨酮制备样品1和2,以在350nm区域中引发光解。相反,在表1b和1c中,不采用光敏剂而制备样品3-6。表1a中所示的碘鎓基光敏引发剂使用光敏剂以移动光解的波长。在这些样品中使用的锍和二茂铁鎓基光敏引发剂吸收在310nm波长下的辐射;310nm大于290nm并足够远离254nm,使得不会提高对智能卡组件中EPROM擦除的关注。
使用常规技术制备样品,将其分配到玻璃上,并使用Oriel灯作为强度为850mW/cm2的UV光源固化一定的时间,依赖于光敏引发剂的具体化合物,该时间为约2秒-约35秒。
如可从表1a-1c中每个表看出的那样,分别与样品2、4和6相比,样品1、3和5中每个样品从智能卡包封剂的反应产物抽出的氟离子数量急剧更少。
也评价表1a-1c中每个表中说明的样品的消粘时间。表1d说明当曝光于以上UV光源时的消粘时间观察结果。评价样品三次,和呈现的观察结果是评价的那些结果的上限值和下限值。
表1d
物理性能 | 样品编号/(秒) | |||||
消粘时间 | 1 | 2 | 3 | 4 | 5 | 6 |
1.9-2.3 | 13.1-13.8 | 6.4-7.1 | 10.2-10.6 | 21-24 | 32-35 |
分别与样品2、4和6相比,样品1、3和5证实在确立消粘时间的速度方面有明显的百分比值基改进。
实施例2
在此实施例中,采用以下表1a中确定的组分和数量制备样品7和8,目的在于确定当曝光于UV光时,采用带有反荷离子的阳离子光敏引发剂制备的组合物是否会通过体积固化(″CTV″)和固化到什么程度,该反荷离子含有共价键合的氟离子,并且将这样的组合物与采用含有离子方式键合的氟离子的光敏引发剂制备的组合物加以比较。
表2a
组分 | 样品编号/(wt%) | ||
类型 | 具体化合物 | 7 | 8 |
环氧 | 己二酸双(3,4-环氧环己基酯) | 76.2 | 76.2 |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 2.87 | 2.87 |
光敏引发剂 | 四(五氟苯基)硼酸二芳基碘鎓 | -- | 2.16 |
混合六氟锑酸三芳基锍 | 2.16 | -- | |
增塑剂 | 蓖麻油衍生物 | 19.39 | 19.39 |
在对源自UVALOC 1000的强度为100mW/cm2的UV光曝光所示时间之后的CTV在下表1b中说明。
表2b
时间(秒) | 样品编号/CTV(mm) | |
7 | 8 | |
10 | -- | -- |
15 | 4.1 | 皮层 |
20 | 4.1 | 1.93 |
30 | >4.6 | 2.72 |
40 | >4.6 | 3.51 |
根据这些结果,清楚的是带有反荷离子的阳离子光敏引发剂的使用通过体积固化(样品8),该反荷离子具有共价键合的氟化物,尽管未达到与带有反荷离子的更常规阳离子光敏引发剂的使用相同的程度,该反荷离子具有阴离子方式键合的氟化物。
实施例3
此实施例说明包含光敏剂的益处,由于H2滤光器阻断在290nm和以下波长的所有光,该光敏剂将波长吸收点移动到约365nm。
在此实施例中,采用下表3a中确定的相对数量的组分制备样品9和10,目的在于确定当曝光于经过滤的UV光(通过H2滤光器)以10秒的时间时,采用带有反荷离子的阳离子光敏引发剂制备的样品是否会固化和固化到什么程度,该反荷离子具有共价键合的氟化物。此滤光器阻断在290nm和以下波长的所有光,和因此仅长于290nm的光通过用于对样品的曝光。
表3a
组分 | 样品编号/(份) | ||
类型 | 具体化合物 | 9 | 10 |
环氧 | UVR 6128 | 75.44 | 75.44 |
UCB CAT 002 | 45.24 | 45.24 | |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 1.63 | 1.63 |
光敏引发剂 | 四(五氟苯基)硼酸二芳基碘鎓 | 0.57 | 0.57 |
光敏剂 | 异丙基噻吨酮 | 0.06 | -- |
如可以从表3a看出的那样,样品9和10的不同之处仅在于样品9中光敏剂的存在,它的存在允许发生固化,甚至在不对254nm或其左右的光曝光的情况下。即光敏剂的存在允许固化在290nm和以上发生。
下表3b中的结果表明,光敏剂的存在促进在对通过H2滤光器的UV光曝光之后的固化,而没有光敏剂,则样品不固化。
表3b
时间(秒) | 样品编号/CTV(mm) | |
3 | 4 | |
10 | 2.48 | -- |
实施例4
此实施例说明降低光敏引发剂和光敏剂数量的益处。在样品11和13中,以及在与常规可光固化包封剂组合物的比较中(在样品12和13中)。
因此,在此实施例中,采用无机填料组分制备样品11、12和13,在此情况下当样品用于组装微电子器件时,将微粉化石英加入以辅助CTE匹配。在这些样品中,在下表4a中确定相对数量的各组分。
表4a
组分 | 样品编号/(wt%) | |||
类型 | 具体化合物 | 11 | 12 | 13 |
环氧 | UVR 6128 | 34.89 | 34.89 | 34.89 |
UCB CAT 002 | 20.92 | 20.92 | 20.92 | |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 1.63 | 1.63 | 1.63 |
光敏引发剂 | 四(五氟苯基)硼酸二芳基碘鎓 | 0.57 | -- | 0.19 |
混合六氟锑酸三芳基锍 | -- | 0.57 | -- | |
光敏剂 | 异丙基噻吨酮 | 0.06 | -- | 0.01 |
无机填料 | 微粉化石英 | 42 | 42 | 42 |
样品11-13每个用作智能卡包封剂,其中在组装期间将智能卡组件曝光于许多不同的光照条件。为模拟这些光照条件,一系列滤光器用于阻断某些强度的光。BL滤光器阻断除320-400范围以外的所有光;H1滤光器阻断310nm以下的所有光;和如上所述H2滤光器阻断290nm以下的所有光。
表4b
时间(秒) | 样品编号/滤光器类型/CTV(mm) | |||||||||||
11 | 12 | 13 | ||||||||||
无 | BL | H1 | H2 | 无 | BL | H1 | H2 | 无 | BL | H1 | H2 | |
5 | 0.67 | - | - | - | 1.07 | 0.4 | 0.91 | 0.86 | 1.11 | - | - | - |
15 | 2.8 | 0.91 | 2.11 | 2.3 | 2.09 | 0.61 | 1.80 | 1.74 | 3.13 | 1.66 | - | - |
30 | 3.18 | 2.44 | 3.68 | 3.49 | 2.31 | 0.97 | 2.55 | 2.52 | 4.37 | 2.7 | - | - |
另外,由在去离子水中高温回流萃取16小时的时间,随后使用装填一定数量二乙烯基苯基体的Dionex离子装填柱A515用38mN NaOH作为洗脱剂进行离子交换色谱,测量样品11、12和13的固化产物中可抽出氟离子水平的降低。样品11的可抽出氟离子水平测定为36ppm,它几乎是相对于从常规智能卡包封剂(样品12)观察到的300ppm水平的十倍改进。
从样品11中0.57wt%到样品13中0.19wt%的光敏引发剂的降低证实从36ppm到10ppm的可抽出氟离子降低方面的进一步改进。
实施例5
UV ACP
在可光固化的各向异性导电糊剂(″ACP″)应用中,石英填料由作为导电粒子的金涂覆聚合物粒子代替。ACP适于与至少一种存在的UV光透射衬底一起使用,使得如果合适地布置辐射源,则辐射可达到ACP分配在随后成对的衬底之间。这样的UV ACP的商业应用是对液晶显示器为软性的电路。从所示数量的列出组分制备样品14。
表5
组分 | 样品编号/(wt%) | |
类型 | 具体化合物 | 14 |
环氧 | 己二酸双(3,4-环氧环己基酯) | 57.2 |
环脂族环氧树脂 | 34.3 | |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 2.63 |
光敏引发剂 | 四(五氟苯基)硼酸二芳基碘鎓(RHODOSIL 2074) | 0.92 |
光敏剂 | 异丙基噻吨酮 | 0.095 |
导电填料 | 金粒子 | 4.75 |
在Finetech倒装片结合器上采用约20牛顿的施加压力(基于芯片面积)生产组件。使用EFOS Ultracore 100SS Plus灯将组件通过组件的玻璃衬底固化约30秒的时间。平均接触电阻测定为3.8千欧。
实施例6
UV芯片连接粘合剂
在用于智能卡的UV芯片连接粘合剂应用中,将下表6中说明的UV芯片连接粘合剂(样品15)分配在芯片将就位之处。
表6
组分 | 样品编号/(wt%) | |
类型 | 具体化合物 | 15 |
环氧 | 己二酸双(3,4-环氧环己基酯) | 60.84 |
环脂族环氧树脂 | 36.07 | |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 2.84 |
光敏引发剂 | 四(五氟苯基)硼酸二芳基碘鎓(RHODOSIL 2074) | 0.26 |
光敏剂 | 异丙基噻吨酮 | 0.02 |
在450mW/cm2的强度下,将芯片连接粘合剂曝光于来自装配有UV氙弧灯的Oriel型号71446的UV辐射400毫秒,及2-3秒的晾置时间以光活化该粘合剂。然后将芯片放置在光活化的芯片连接粘合剂上。芯片连接粘合剂的固化迅速在芯片放置于其上之后发生。然后可以将组件暴露于110℃下1分钟和/或进一步的UV辐射。
一旦固化的UV芯片连接粘合剂证实可接受的芯片剪切强度测量值。
实施例7
在UV ACP应用中,可以在倒装片或软性电路的组装之前将ACP曝光于高能光源,如EFOS Ultracore 100SS Plus灯。在此情况下,可以使用ACP,其中两个衬底都从基本不是辐射透射性的材料构成。辐射曝光通常是毫秒量级,和达到需要后固化的程度,选择的温度可以低至约80℃。因此,此组装工艺适用于温度敏感性的衬底。在下表7中,采用所示的组分和数量将样品16制备为UV ACP。
表7
组分 | 样品编号/(wt%) | |
类型 | 具体化合物 | 16 |
环氧 | 己二酸双(3,4-环氧环己基酯) | 56.0 |
环脂族环氧树脂 | 33.6 | |
粘合促进剂 | γ-环氧丙氧丙基三甲氧基硅烷 | 2.57 |
光敏引发剂 | 四(五氟苯基)硼酸二芳基碘鎓(RHODOSIL 2074) | 0.90 |
光敏剂 | 异丙基噻吨酮 | 0.093 |
导电填料 | 金粒子 | 4.90 |
触变胶 | 热解法二氧化硅 | 1.94 |
将样品16如制备时那样通过丝网印刷过程分配到FR4各向异性的导电粘合剂试件上。试件上的导电轨迹由金构成。将倒装片的突出处与FR4上的金轨迹对齐。然后将样品16曝光于来自EFOS Ultracure 100SSPlus灯的UV光200毫秒。在310nm和365nm下测量的强度分别是225mW/cm2和100mW/cm2。然后在40N压力下将芯片保持就位5秒。然后测量电阻和记录在24个读数和两个样品试件范围内的平均数字。试件的平均值是:0.47和0.67千欧。
然后将样品16丝网印刷到ITO涂覆的玻璃试件上。对齐,UV曝光和压力施加如上进行,且电阻测量如上进行。每个试件上的平均电阻是:3.6千欧。
尽管已显示和描述本发明的具体实施方案,但进一步的改变和改进对本领域技术人员是显而易见的。因此地,本发明不限于显示和描述的特定实施方案,和因此权利要求意于覆盖不背离本发明主旨和范围的所有这样的改变和改进。
Claims (23)
1.一种在对电磁谱中的辐射曝光下可以固化的可光固化组合物,其反应产物具有低水平的可抽出卤离子,包含:
(i)环氧树脂组分,
(ii)非必要地,光敏剂,和
(iii)阳离子光敏引发剂,它的反荷离子包括至少一个共价键合到反荷离子的碳原子上的卤原子。
2.根据权利要求1的组合物,进一步包含粘合促进剂。
3.根据权利要求1的组合物,其中该组合物能够通过至少约1mm的体积固化。
4.根据权利要求1的组合物,其中该组合物能够在至少290nm波长的辐射下固化。
5.根据权利要求1的组合物,进一步包含无机填料组分。
6.根据权利要求1的组合物,其中可抽出卤离子的低水平为小于100ppm。
7.根据权利要求1的组合物,其中该组合物能够在小于约15秒的时间内固化。
8.根据权利要求1的组合物,其中环氧树脂组分是选自如下的一种:环脂族环氧树脂;C4-C28烷基缩水甘油醚;C2-C28烷基-和烯基-缩水甘油酯;C1-C28烷基-,单-和多-酚缩水甘油醚;如下物质的多缩水甘油醚:焦儿茶酚、间苯二酚、对苯二酚、4,4′-二羟基二苯基甲烷、4,4′-二羟基-3,3′-二甲基二苯基甲烷、4,4′-二羟基二苯基二甲基甲烷、4,4′-二羟基二苯基甲基甲烷、4,4’-二羟基二苯基环己烷、4,4′-二羟基-3,3′-二甲基二苯基丙烷、4,4’-二羟基二苯基砜和三(4-羟苯基)甲烷;上述二酚的氯化和溴化产物的多缩水甘油醚;线性酚醛清漆的多缩水甘油醚;通过将二酚的醚酯化获得的二酚的多缩水甘油醚,该二酚的醚通过用二卤代烷烃或二卤素二烷基醚将芳族氢羧酸的盐酯化获得;通过将苯酚和包含至少两个卤素原子的长链卤素链烷烃缩合获得的多酚的多缩水甘油醚;苯酚线性酚醛清漆环氧树脂;甲酚线性酚醛清漆环氧树脂;及其组合。
9.根据权利要求1的组合物,其中环氧树脂组分是环脂族环氧树脂、双酚A环氧树脂、双酚F环氧树脂及其组合。
10.根据权利要求1的组合物,其中以基于总组合物计最多至约98wt%的数量使用环氧树脂组分。
11.根据权利要求1的组合物,其中光敏剂选自噻吨酮、蒽、苝、吩噻嗪、1,2-苯并蒽、晕苯、芘、并四苯及其组合。
12.根据权利要求1的组合物,其中光敏剂是噻吨酮。
13.根据权利要求1的组合物,其中以约0.01-1wt%的数量使用光敏剂。
14.根据权利要求1的组合物,其中阳离子光敏引发剂包括如下结构中的阳离子反荷离子:
其中R1,R2,R3,R4,R5和R5’可以存在或可以不存在,但当不存在时是氢和当存在任何时可单独选自C1-6烷基、C2-6烯基、卤素、羟基和羧基,其中R1,R2,R5和R5’在它们所连接到的每个芳族环上单独存在最多至5次,和R3和R4在它们所连接到的每个芳族环上单独存在最多至4次,n是0-3和m是0-1。
16.根据权利要求1的组合物,其中阳离子光敏引发剂包括选自如下的反荷离子:
其中对于结构
IV,R6,R7,R8,R9和R10可以存在或可以不存在,但当不存在时是氢和当存在任何时可以单独地选自1-5个碳原子的烷基、卤素、羟基和羧基,对于结构
V,R6,R7,R8,R9,R10,R6’,R7’,R8’,R9’和R10’可以存在或可以不存在,但当不存在时是氢和当存在任何时可以单独地选自1-5个碳原子的烷基、卤素、羟基和羧基,和对于结构
VI,R11,R12,R13,R14,R15,R16,R17,R18,R18,R20和R21可以存在或可以不存在,但当不存在时是氢和当存在任何时可以单独地选自1-5个碳原子的烷基、卤素、羟基和羧基。
17.根据权利要求1的组合物,其中阳离子光敏引发剂包括选自如下的反荷离子:
18.根据权利要求1的组合物,其中以基于总组合物计为约0.1-约2wt%的数量使用阳离子光敏引发剂。
19,根据权利要求1的组合物,其中阳离子光敏引发剂的反荷离子是卤化四苯基硼酸根。
20.根据权利要求1的组合物,其中阳离子光敏引发剂的反荷离子是五氟四苯基硼酸根。
21.一种智能卡模块组件,包括:
加工成所需尺寸以接收芯片的载体衬底;
具有两个表面的芯片,其中第一个表面含有位于其上的接合片和其中第二个表面加工成所需尺寸用于放置在载体衬底上,其中将芯片的第二表面置于载体衬底上使得在芯片第一表面上的接合片处于相对于载体衬底上的接合片的位置,以通过导线连接器使其之间电连接;
多个接合片,其中一些接合片位于芯片的一个表面上和其中其它接合片位于载体衬底上;
多个导线连接器;和
根据权利要求1的组合物,其中将芯片的第二表面置于载体衬底上,使得芯片的第一表面上的接合片处于相对于载体衬底上的接合片的位置,以通过导线连接器使其之间电连接,和其中将组合物置于智能卡模块组件的至少一部分上以覆盖建立的导线接头连接。
22.一种智能卡,包括:
塑料卡;和
权利要求21的智能卡模块组件,该模块组件已曝光于波长至少为290nm的电磁辐射中的辐射,其包封在塑料卡中。
23.一种将集成电路连接到载体衬底上的方法,该方法的步骤包括:
将根据权利要求1的组合物施用到载体衬底上;
在其施用之前或之后,通过对电磁谱中的辐射曝光而活化该组合物;和
将集成电路布置到电路板上并在其间建立电连接;和
非必要地,在60-140℃的温度下固化该组合物。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/176,648 | 2002-06-24 | ||
US10/176,648 US6918984B2 (en) | 2002-06-24 | 2002-06-24 | Photocurable adhesive compositions, reaction products of which have low halide ion content |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1668716A true CN1668716A (zh) | 2005-09-14 |
CN100408647C CN100408647C (zh) | 2008-08-06 |
Family
ID=29999068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038171414A Expired - Fee Related CN100408647C (zh) | 2002-06-24 | 2003-06-24 | 可光固化的粘合剂组合物及其具有低卤离子含量的反应产物 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6918984B2 (zh) |
EP (1) | EP1516030A1 (zh) |
JP (1) | JP2005530886A (zh) |
CN (1) | CN100408647C (zh) |
AU (1) | AU2003253228A1 (zh) |
WO (1) | WO2004000965A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103849327A (zh) * | 2012-11-30 | 2014-06-11 | 乐金显示有限公司 | 用于电连接的粘合材料,使用该粘合材料的显示装置以及制造该显示装置的方法 |
CN104922725A (zh) * | 2015-06-08 | 2015-09-23 | 苏州乔纳森新材料科技有限公司 | 一种光固化粘合剂及其制备方法 |
CN105489562A (zh) * | 2015-10-18 | 2016-04-13 | 魏赛琦 | 一种智能卡卡芯及其制备方法 |
CN106165074A (zh) * | 2014-03-19 | 2016-11-23 | 三星电子株式会社 | 制造半导体装置的方法 |
CN108018011A (zh) * | 2017-12-05 | 2018-05-11 | 烟台德邦科技有限公司 | 一种适用于非透光材质粘接的紫外光固化胶黏剂 |
CN108663900A (zh) * | 2017-03-29 | 2018-10-16 | 台虹科技股份有限公司 | 感光性绝缘组成物 |
CN108913072A (zh) * | 2018-05-10 | 2018-11-30 | 昆山西微美晶电子新材料科技有限公司 | 用于智能卡芯片保护包封胶及其制备方法 |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6674158B2 (en) * | 1998-09-03 | 2004-01-06 | Micron Technology, Inc. | Semiconductor die package having a UV cured polymeric die coating |
SE528250C2 (sv) * | 2004-02-27 | 2006-10-03 | Calignum Technologies Ab | Komposition innefattande en initiator och ett förfarande för att behandla trä med kompositionen |
JP2005281611A (ja) * | 2004-03-30 | 2005-10-13 | Toho Tenax Co Ltd | エポキシ樹脂組成物を用いたプリプレグ |
JP2005281606A (ja) * | 2004-03-30 | 2005-10-13 | Toho Tenax Co Ltd | 放射線硬化用エポキシ樹脂組成物 |
EP1619726A1 (fr) * | 2004-07-22 | 2006-01-25 | St Microelectronics S.A. | Boîtier optique pour capteur semiconducteur |
WO2007017341A1 (de) * | 2005-08-11 | 2007-02-15 | Siemens Aktiengesellschaft | Fluxing encapsulants - giessharze für dca-anwendungen auf basis kationisch härtbarer epoxidharze |
US8581108B1 (en) | 2006-08-23 | 2013-11-12 | Rockwell Collins, Inc. | Method for providing near-hermetically coated integrated circuit assemblies |
US8166645B2 (en) | 2006-08-23 | 2012-05-01 | Rockwell Collins, Inc. | Method for providing near-hermetically coated, thermally protected integrated circuit assemblies |
US8637980B1 (en) | 2007-12-18 | 2014-01-28 | Rockwell Collins, Inc. | Adhesive applications using alkali silicate glass for electronics |
US8174830B2 (en) * | 2008-05-06 | 2012-05-08 | Rockwell Collins, Inc. | System and method for a substrate with internal pumped liquid metal for thermal spreading and cooling |
US8084855B2 (en) * | 2006-08-23 | 2011-12-27 | Rockwell Collins, Inc. | Integrated circuit tampering protection and reverse engineering prevention coatings and methods |
US8617913B2 (en) * | 2006-08-23 | 2013-12-31 | Rockwell Collins, Inc. | Alkali silicate glass based coating and method for applying |
US7915527B1 (en) | 2006-08-23 | 2011-03-29 | Rockwell Collins, Inc. | Hermetic seal and hermetic connector reinforcement and repair with low temperature glass coatings |
US8076185B1 (en) | 2006-08-23 | 2011-12-13 | Rockwell Collins, Inc. | Integrated circuit protection and ruggedization coatings and methods |
US8363189B2 (en) * | 2007-12-18 | 2013-01-29 | Rockwell Collins, Inc. | Alkali silicate glass for displays |
US8084553B2 (en) * | 2008-01-10 | 2011-12-27 | Trillion Science, Inc. | Curable adhesive compositions, process, and applications |
US8017872B2 (en) * | 2008-05-06 | 2011-09-13 | Rockwell Collins, Inc. | System and method for proportional cooling with liquid metal |
US8616266B2 (en) * | 2008-09-12 | 2013-12-31 | Rockwell Collins, Inc. | Mechanically compliant thermal spreader with an embedded cooling loop for containing and circulating electrically-conductive liquid |
US8221089B2 (en) * | 2008-09-12 | 2012-07-17 | Rockwell Collins, Inc. | Thin, solid-state mechanism for pumping electrically conductive liquids in a flexible thermal spreader |
US8650886B2 (en) * | 2008-09-12 | 2014-02-18 | Rockwell Collins, Inc. | Thermal spreader assembly with flexible liquid cooling loop having rigid tubing sections and flexible tubing sections |
US8205337B2 (en) * | 2008-09-12 | 2012-06-26 | Rockwell Collins, Inc. | Fabrication process for a flexible, thin thermal spreader |
US8309633B2 (en) * | 2008-07-17 | 2012-11-13 | Henkel Ireland Ltd. | Low temperature, cationically curable compositions with improved cure speed and toughness |
US8119040B2 (en) | 2008-09-29 | 2012-02-21 | Rockwell Collins, Inc. | Glass thick film embedded passive material |
WO2010068488A1 (en) * | 2008-11-25 | 2010-06-17 | Lord Corporation | Methods for protecting a die surface with photocurable materials |
US9093448B2 (en) | 2008-11-25 | 2015-07-28 | Lord Corporation | Methods for protecting a die surface with photocurable materials |
JP5444702B2 (ja) * | 2008-12-05 | 2014-03-19 | デクセリアルズ株式会社 | 新規なスルホニウムボレート錯体 |
CN102842566A (zh) * | 2011-06-21 | 2012-12-26 | 上海长丰智能卡有限公司 | 一种带线圈的智能卡载带 |
CN102842565A (zh) * | 2011-06-21 | 2012-12-26 | 上海长丰智能卡有限公司 | 一种带线圈的智能卡模块及其实现方式 |
CN102311681A (zh) * | 2011-08-25 | 2012-01-11 | 浙江科创新材料科技有限公司 | Uv固化型银纳米线墨水及其制备方法和使用方法 |
US10147660B2 (en) | 2011-10-27 | 2018-12-04 | Global Circuits Innovations, Inc. | Remapped packaged extracted die with 3D printed bond connections |
US9935028B2 (en) | 2013-03-05 | 2018-04-03 | Global Circuit Innovations Incorporated | Method and apparatus for printing integrated circuit bond connections |
US10109606B2 (en) | 2011-10-27 | 2018-10-23 | Global Circuit Innovations, Inc. | Remapped packaged extracted die |
US9870968B2 (en) | 2011-10-27 | 2018-01-16 | Global Circuit Innovations Incorporated | Repackaged integrated circuit and assembly method |
US10128161B2 (en) | 2011-10-27 | 2018-11-13 | Global Circuit Innovations, Inc. | 3D printed hermetic package assembly and method |
US9966319B1 (en) | 2011-10-27 | 2018-05-08 | Global Circuit Innovations Incorporated | Environmental hardening integrated circuit method and apparatus |
US10177054B2 (en) | 2011-10-27 | 2019-01-08 | Global Circuit Innovations, Inc. | Method for remapping a packaged extracted die |
US10002846B2 (en) | 2011-10-27 | 2018-06-19 | Global Circuit Innovations Incorporated | Method for remapping a packaged extracted die with 3D printed bond connections |
KR101355855B1 (ko) * | 2011-12-19 | 2014-01-29 | 제일모직주식회사 | 이방성 도전 필름 |
US9594999B2 (en) | 2012-04-03 | 2017-03-14 | X-Card Holdings, Llc | Information carrying card comprising crosslinked polymer composition, and method of making the same |
US9122968B2 (en) | 2012-04-03 | 2015-09-01 | X-Card Holdings, Llc | Information carrying card comprising a cross-linked polymer composition, and method of making the same |
US9435915B1 (en) | 2012-09-28 | 2016-09-06 | Rockwell Collins, Inc. | Antiglare treatment for glass |
WO2014149926A1 (en) | 2013-03-15 | 2014-09-25 | X-Card Holdings, Llc | Methods of making a core layer for an information carrying card, and resulting products |
WO2018058135A1 (en) | 2016-09-26 | 2018-03-29 | University Of Washington | Pdms resin for stereolithographic 3d-printing of pdms |
WO2018095856A1 (de) | 2016-11-22 | 2018-05-31 | Basf Se | Verfahren zur herstellung von 1,3-butadien aus n-butenen durch oxidative dehydrierung umfassend eine methacrolein-abtrennung bei der aufarbeitung |
US10115645B1 (en) | 2018-01-09 | 2018-10-30 | Global Circuit Innovations, Inc. | Repackaged reconditioned die method and assembly |
CN111819577A (zh) | 2018-03-07 | 2020-10-23 | X卡控股有限公司 | 金属卡 |
EP3747925A1 (en) | 2019-06-07 | 2020-12-09 | Henkel AG & Co. KGaA | Radiation-curable composition by anionic polymerization |
US11508680B2 (en) | 2020-11-13 | 2022-11-22 | Global Circuit Innovations Inc. | Solder ball application for singular die |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3806738C1 (zh) | 1988-03-02 | 1989-09-07 | Espe Stiftung & Co Produktions- Und Vertriebs Kg, 8031 Seefeld, De | |
JPH0491118A (ja) * | 1990-08-06 | 1992-03-24 | Yokohama Rubber Co Ltd:The | 光硬化性樹脂組成物 |
US6147184A (en) | 1992-03-23 | 2000-11-14 | Rhone-Poulenc Chimie | Onium borates/borates of organometallic complexes and cationic initiation of polymerization therewith |
FR2688783A1 (fr) | 1992-03-23 | 1993-09-24 | Rhone Poulenc Chimie | Nouveaux borates d'onium ou de complexe organometallique amorceurs cationiques de polymerisation. |
US5721289A (en) * | 1994-11-04 | 1998-02-24 | Minnesota Mining And Manufacturing Company | Stable, low cure-temperature semi-structural pressure sensitive adhesive |
SG48462A1 (en) * | 1995-10-26 | 1998-04-17 | Ibm | Lead protective coating composition process and structure thereof |
US5863970A (en) | 1995-12-06 | 1999-01-26 | Polyset Company, Inc. | Epoxy resin composition with cycloaliphatic epoxy-functional siloxane |
US5777903A (en) | 1996-01-22 | 1998-07-07 | Motorola, Inc. | Solar cell powered smart card with integrated display and interface keypad |
US5721451A (en) | 1996-12-02 | 1998-02-24 | Motorola, Inc. | Integrated circuit assembly adhesive and method thereof |
FR2761368B1 (fr) | 1997-03-25 | 2005-10-21 | Rhodia Chimie Sa | Composition (e. g. encre ou vernis) polymerisable et/ou reticulable sous irradiation par voie cationique et/ou radicalaire, a base d'une matrice organique, d'un diluant silicone et d'un photo-amorceur |
SG91249A1 (en) * | 1999-01-14 | 2002-09-17 | Lintec Corp | Process for producing non-contact data carrier |
JP2002062649A (ja) * | 2000-08-21 | 2002-02-28 | Ngk Spark Plug Co Ltd | プリント配線基板用感光性樹脂組成物、プリント配線基板 |
JP2002097443A (ja) * | 2000-09-21 | 2002-04-02 | Hitachi Chem Co Ltd | 接着剤組成物及びこれを用いた回路接続材料並びに接続体 |
-
2002
- 2002-06-24 US US10/176,648 patent/US6918984B2/en not_active Expired - Fee Related
-
2003
- 2003-06-24 WO PCT/IE2003/000096 patent/WO2004000965A1/en not_active Application Discontinuation
- 2003-06-24 CN CNB038171414A patent/CN100408647C/zh not_active Expired - Fee Related
- 2003-06-24 JP JP2004515393A patent/JP2005530886A/ja active Pending
- 2003-06-24 EP EP03760851A patent/EP1516030A1/en not_active Withdrawn
- 2003-06-24 AU AU2003253228A patent/AU2003253228A1/en not_active Abandoned
-
2004
- 2004-11-08 US US10/982,840 patent/US20050133152A1/en not_active Abandoned
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103849327A (zh) * | 2012-11-30 | 2014-06-11 | 乐金显示有限公司 | 用于电连接的粘合材料,使用该粘合材料的显示装置以及制造该显示装置的方法 |
CN103849327B (zh) * | 2012-11-30 | 2017-03-01 | 乐金显示有限公司 | 用于电连接的粘合材料,使用该粘合材料的显示装置以及制造该显示装置的方法 |
CN106165074A (zh) * | 2014-03-19 | 2016-11-23 | 三星电子株式会社 | 制造半导体装置的方法 |
CN104922725A (zh) * | 2015-06-08 | 2015-09-23 | 苏州乔纳森新材料科技有限公司 | 一种光固化粘合剂及其制备方法 |
CN105489562A (zh) * | 2015-10-18 | 2016-04-13 | 魏赛琦 | 一种智能卡卡芯及其制备方法 |
CN108663900A (zh) * | 2017-03-29 | 2018-10-16 | 台虹科技股份有限公司 | 感光性绝缘组成物 |
CN108018011A (zh) * | 2017-12-05 | 2018-05-11 | 烟台德邦科技有限公司 | 一种适用于非透光材质粘接的紫外光固化胶黏剂 |
CN108018011B (zh) * | 2017-12-05 | 2021-03-30 | 烟台德邦科技股份有限公司 | 一种适用于非透光材质粘接的紫外光固化胶黏剂 |
CN108913072A (zh) * | 2018-05-10 | 2018-11-30 | 昆山西微美晶电子新材料科技有限公司 | 用于智能卡芯片保护包封胶及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US20050133152A1 (en) | 2005-06-23 |
EP1516030A1 (en) | 2005-03-23 |
AU2003253228A1 (en) | 2004-01-06 |
CN100408647C (zh) | 2008-08-06 |
JP2005530886A (ja) | 2005-10-13 |
US6918984B2 (en) | 2005-07-19 |
WO2004000965A1 (en) | 2003-12-31 |
US20040006150A1 (en) | 2004-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1668716A (zh) | 可光固化的粘合剂组合物及其具有低卤离子含量的反应产物 | |
CN1106418C (zh) | 密封剂在密封电子封装体的焊料连接件中的应用及密封方法 | |
US6921782B2 (en) | Adhesive and electric device | |
EP2017295A1 (en) | Thermosetting composition for optical semiconductor, die bond material for optical semiconductor device, underfill material for optical semiconductor device, sealing agent for optical semiconductor device, and optical semiconductor device | |
CN102002209A (zh) | 一种用于倒装芯片型半导体封装用底部填充胶 | |
KR101076077B1 (ko) | 반도체 봉지용 에폭시 수지 조성물 및 반도체 장치 | |
KR20160030527A (ko) | 반도체 장치의 제조 방법 및 반도체 장치 | |
EP1911784A1 (en) | Silica nanoparticles thermoset resin compositions | |
US6790473B2 (en) | Lead protective coating composition, process and structure thereof | |
CN106062118B (zh) | 各向异性导电粘接剂、连接体的制造方法及电子部件的连接方法 | |
Chen et al. | Effect of chain flexibility of epoxy encapsulants on the performance and reliability of light-emitting diodes | |
EP1432774B1 (en) | Adhesive sheet of cross-linked silicone, method of manufacturing thereof and device comprising the sheet | |
JP2003321594A (ja) | 封止用エポキシ樹脂成形材料及び電子部品装置 | |
EP1502922A1 (en) | Curable encapsulant compositions | |
JP2005054045A (ja) | 封止用エポキシ樹脂成形材料及び電子部品装置 | |
JP2009185131A (ja) | 光半導体用熱硬化性組成物、光半導体素子用封止剤及び光半導体装置 | |
JP6518100B2 (ja) | 光硬化性導電材料、接続構造体及び接続構造体の製造方法 | |
EP0827993A2 (en) | Electrical components and method for the fabrication thereof | |
JP5070692B2 (ja) | 半導体封止用エポキシ樹脂組成物および半導体装置 | |
JP2005320491A (ja) | 接着剤組成物、それを用いたフィルム状接着剤及び回路接続材料、並びに回路部材の接続構造及びその製造方法 | |
JP5251949B2 (ja) | 基板およびプリント回路板 | |
KR20190133022A (ko) | 접착제 조성물 및 구조체 | |
JPH06196513A (ja) | 接着剤および半導体装置 | |
CN102533166B (zh) | 半导体组装用粘结膜组合物和由该组合物形成的粘结膜 | |
JP2007321012A (ja) | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080806 |