CN1653609A - 制造半导体非易失性存储器的方法 - Google Patents
制造半导体非易失性存储器的方法 Download PDFInfo
- Publication number
- CN1653609A CN1653609A CNA038102080A CN03810208A CN1653609A CN 1653609 A CN1653609 A CN 1653609A CN A038102080 A CNA038102080 A CN A038102080A CN 03810208 A CN03810208 A CN 03810208A CN 1653609 A CN1653609 A CN 1653609A
- Authority
- CN
- China
- Prior art keywords
- conductive traces
- layer
- conductor tracks
- conductive
- conductors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 239000004020 conductor Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000003860 storage Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 40
- 230000004888 barrier function Effects 0.000 claims description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000001465 metallisation Methods 0.000 claims description 6
- 239000012774 insulation material Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 73
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02076830.5 | 2002-05-07 | ||
EP02076830 | 2002-05-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1653609A true CN1653609A (zh) | 2005-08-10 |
CN1315181C CN1315181C (zh) | 2007-05-09 |
Family
ID=29414763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038102080A Expired - Fee Related CN1315181C (zh) | 2002-05-07 | 2003-05-05 | 制造半导体非易失性存储器的方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6991982B2 (zh) |
EP (1) | EP1506574B1 (zh) |
JP (1) | JP2005524992A (zh) |
KR (1) | KR20040111581A (zh) |
CN (1) | CN1315181C (zh) |
AT (1) | ATE419650T1 (zh) |
AU (1) | AU2003223028A1 (zh) |
DE (1) | DE60325581D1 (zh) |
TW (1) | TWI289343B (zh) |
WO (1) | WO2003096413A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100578669C (zh) * | 2008-01-28 | 2010-01-06 | 南京航空航天大学 | 一种非易失存储器 |
CN110021606A (zh) * | 2018-01-10 | 2019-07-16 | 力旺电子股份有限公司 | 单层多晶硅非挥发性内存单元 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100683389B1 (ko) * | 2005-09-20 | 2007-02-15 | 동부일렉트로닉스 주식회사 | 플래시 메모리의 셀 트랜지스터 및 그 제조 방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5712180A (en) * | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
US6063702A (en) * | 1997-01-27 | 2000-05-16 | Chartered Semiconductor Manufacturing, Ltd. | Global planarization method for inter level dielectric layers using IDL blocks |
EP1080490B1 (en) * | 1999-03-10 | 2007-12-26 | Nxp B.V. | Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor |
TW484228B (en) * | 1999-08-31 | 2002-04-21 | Toshiba Corp | Non-volatile semiconductor memory device and the manufacturing method thereof |
EP1183732A1 (en) * | 2000-03-08 | 2002-03-06 | Koninklijke Philips Electronics N.V. | Semiconductor device and method of manufacturing the same |
GB0018028D0 (en) * | 2000-07-24 | 2000-09-13 | Koninkl Philips Electronics Nv | Semiconductor devices and their manufacture |
US6512263B1 (en) * | 2000-09-22 | 2003-01-28 | Sandisk Corporation | Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming |
-
2003
- 2003-05-05 CN CNB038102080A patent/CN1315181C/zh not_active Expired - Fee Related
- 2003-05-05 TW TW092112224A patent/TWI289343B/zh not_active IP Right Cessation
- 2003-05-05 JP JP2004504291A patent/JP2005524992A/ja active Pending
- 2003-05-05 WO PCT/IB2003/001740 patent/WO2003096413A1/en active Application Filing
- 2003-05-05 EP EP03718996A patent/EP1506574B1/en not_active Expired - Lifetime
- 2003-05-05 AU AU2003223028A patent/AU2003223028A1/en not_active Abandoned
- 2003-05-05 DE DE60325581T patent/DE60325581D1/de not_active Expired - Lifetime
- 2003-05-05 US US10/514,022 patent/US6991982B2/en not_active Expired - Fee Related
- 2003-05-05 KR KR10-2004-7017816A patent/KR20040111581A/ko not_active Application Discontinuation
- 2003-05-05 AT AT03718996T patent/ATE419650T1/de not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100578669C (zh) * | 2008-01-28 | 2010-01-06 | 南京航空航天大学 | 一种非易失存储器 |
CN110021606A (zh) * | 2018-01-10 | 2019-07-16 | 力旺电子股份有限公司 | 单层多晶硅非挥发性内存单元 |
Also Published As
Publication number | Publication date |
---|---|
US20050207209A1 (en) | 2005-09-22 |
EP1506574B1 (en) | 2008-12-31 |
TWI289343B (en) | 2007-11-01 |
TW200401410A (en) | 2004-01-16 |
AU2003223028A1 (en) | 2003-11-11 |
DE60325581D1 (de) | 2009-02-12 |
CN1315181C (zh) | 2007-05-09 |
US6991982B2 (en) | 2006-01-31 |
WO2003096413A1 (en) | 2003-11-20 |
JP2005524992A (ja) | 2005-08-18 |
KR20040111581A (ko) | 2004-12-31 |
ATE419650T1 (de) | 2009-01-15 |
EP1506574A1 (en) | 2005-02-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20070907 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20070907 Address after: Holland Ian Deho Finn Patentee after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Patentee before: Koninklijke Philips Electronics N.V. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070509 Termination date: 20130505 |