ATE419650T1 - Herstellungsverfahren eines halbleiterfestwertspeichers - Google Patents
Herstellungsverfahren eines halbleiterfestwertspeichersInfo
- Publication number
- ATE419650T1 ATE419650T1 AT03718996T AT03718996T ATE419650T1 AT E419650 T1 ATE419650 T1 AT E419650T1 AT 03718996 T AT03718996 T AT 03718996T AT 03718996 T AT03718996 T AT 03718996T AT E419650 T1 ATE419650 T1 AT E419650T1
- Authority
- AT
- Austria
- Prior art keywords
- conductors
- memory
- active regions
- planarized
- conductive layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000007787 solid Substances 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 10
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02076830 | 2002-05-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE419650T1 true ATE419650T1 (de) | 2009-01-15 |
Family
ID=29414763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03718996T ATE419650T1 (de) | 2002-05-07 | 2003-05-05 | Herstellungsverfahren eines halbleiterfestwertspeichers |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6991982B2 (de) |
| EP (1) | EP1506574B1 (de) |
| JP (1) | JP2005524992A (de) |
| KR (1) | KR20040111581A (de) |
| CN (1) | CN1315181C (de) |
| AT (1) | ATE419650T1 (de) |
| AU (1) | AU2003223028A1 (de) |
| DE (1) | DE60325581D1 (de) |
| TW (1) | TWI289343B (de) |
| WO (1) | WO2003096413A1 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100683389B1 (ko) * | 2005-09-20 | 2007-02-15 | 동부일렉트로닉스 주식회사 | 플래시 메모리의 셀 트랜지스터 및 그 제조 방법 |
| CN100578669C (zh) * | 2008-01-28 | 2010-01-06 | 南京航空航天大学 | 一种非易失存储器 |
| US10797063B2 (en) * | 2018-01-10 | 2020-10-06 | Ememory Technology Inc. | Single-poly nonvolatile memory unit |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5712180A (en) * | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
| US6063702A (en) * | 1997-01-27 | 2000-05-16 | Chartered Semiconductor Manufacturing, Ltd. | Global planarization method for inter level dielectric layers using IDL blocks |
| EP1080490B1 (de) * | 1999-03-10 | 2007-12-26 | Nxp B.V. | Verfahren zur herstellung eines halbleiterbauelements mit einem bipolartransistor und einem kondensator |
| TW484228B (en) * | 1999-08-31 | 2002-04-21 | Toshiba Corp | Non-volatile semiconductor memory device and the manufacturing method thereof |
| KR100841891B1 (ko) * | 2000-03-08 | 2008-06-30 | 엔엑스피 비 브이 | 반도체 디바이스 및 그 제조 방법 |
| GB0018028D0 (en) * | 2000-07-24 | 2000-09-13 | Koninkl Philips Electronics Nv | Semiconductor devices and their manufacture |
| US6512263B1 (en) * | 2000-09-22 | 2003-01-28 | Sandisk Corporation | Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming |
-
2003
- 2003-05-05 EP EP03718996A patent/EP1506574B1/de not_active Expired - Lifetime
- 2003-05-05 AU AU2003223028A patent/AU2003223028A1/en not_active Abandoned
- 2003-05-05 US US10/514,022 patent/US6991982B2/en not_active Expired - Fee Related
- 2003-05-05 JP JP2004504291A patent/JP2005524992A/ja active Pending
- 2003-05-05 DE DE60325581T patent/DE60325581D1/de not_active Expired - Lifetime
- 2003-05-05 CN CNB038102080A patent/CN1315181C/zh not_active Expired - Fee Related
- 2003-05-05 AT AT03718996T patent/ATE419650T1/de not_active IP Right Cessation
- 2003-05-05 WO PCT/IB2003/001740 patent/WO2003096413A1/en active Application Filing
- 2003-05-05 KR KR10-2004-7017816A patent/KR20040111581A/ko not_active Application Discontinuation
- 2003-05-05 TW TW092112224A patent/TWI289343B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN1653609A (zh) | 2005-08-10 |
| EP1506574B1 (de) | 2008-12-31 |
| DE60325581D1 (de) | 2009-02-12 |
| JP2005524992A (ja) | 2005-08-18 |
| US20050207209A1 (en) | 2005-09-22 |
| TW200401410A (en) | 2004-01-16 |
| WO2003096413A1 (en) | 2003-11-20 |
| EP1506574A1 (de) | 2005-02-16 |
| KR20040111581A (ko) | 2004-12-31 |
| CN1315181C (zh) | 2007-05-09 |
| TWI289343B (en) | 2007-11-01 |
| AU2003223028A1 (en) | 2003-11-11 |
| US6991982B2 (en) | 2006-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101719374B1 (ko) | 개선된 ｓｓｌ 및 ｂｌ 콘트래스트 레이아웃을 구비한 3ｄ 메모리 어레이 | |
| US5541130A (en) | Process for making and programming a flash memory array | |
| CN1320639C (zh) | 用于使位线不会短路的存储器装置的硬掩膜方法 | |
| US7139188B2 (en) | Memory architecture and method of manufacture and operation thereof | |
| JP2002208682A5 (de) | ||
| JPH1092962A (ja) | Ｅｅｐｒｏｍ | |
| CN103165610B (zh) | 半导体器件及其制造方法 | |
| JPH11261039A (ja) | 不揮発性半導体記憶装置とその製造方法 | |
| CN102760723A (zh) | 半导体器件 | |
| CN101702327B (zh) | 一种存储器阵列 | |
| KR20050002876A (ko) | 메모리 워드라인 하드 마스크 확장 | |
| TW200518268A (en) | Improved method for manufacturing a 2-transistor memory cell, and improved memory cell thus obtained | |
| JP2005522880A (ja) | ビットライン絶縁を有するメモリの製造方法 | |
| CN102800673B (zh) | 半导体存储单元阵列和半导体器件 | |
| CN1971883A (zh) | 制造闪存器件的方法 | |
| US11930644B2 (en) | Semiconductor structure and storage circuit | |
| KR100634006B1 (ko) | 스플리트 게이트형 비휘발성 기억 장치 및 그 제조방법 | |
| ATE419650T1 (de) | Herstellungsverfahren eines halbleiterfestwertspeichers | |
| TW344144B (en) | Nonvolatile memory device and process for producing the same | |
| US20150147858A1 (en) | Methods of manufacturing non-volatile memory devices | |
| JP3086282B2 (ja) | ポリシリコンスペーサを使用した分割ゲートｅｐｒｏｍセル | |
| US6720133B1 (en) | Memory manufacturing process using disposable ARC for wordline formation | |
| CN101118878A (zh) | 单层多晶硅可电除可程序只读存储单元的制造方法 | |
| WO2003005440A3 (en) | Non-volatile memory | |
| JP2021141276A (ja) | 半導体記憶装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |