CN1650443A - 对于可编程器件使用原子层沉积 - Google Patents

对于可编程器件使用原子层沉积 Download PDF

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Publication number
CN1650443A
CN1650443A CN02829486.6A CN02829486A CN1650443A CN 1650443 A CN1650443 A CN 1650443A CN 02829486 A CN02829486 A CN 02829486A CN 1650443 A CN1650443 A CN 1650443A
Authority
CN
China
Prior art keywords
electrode
ald
programmable material
nitride
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN02829486.6A
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English (en)
Chinese (zh)
Inventor
T·A·劳里
C·H·丹尼森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ovonyx Inc
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Publication of CN1650443A publication Critical patent/CN1650443A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN02829486.6A 2002-08-21 2002-08-21 对于可编程器件使用原子层沉积 Pending CN1650443A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/026552 WO2004032256A1 (fr) 2002-08-21 2002-08-21 Utilisation de depot en couche atomique pour dispositif programmable

Publications (1)

Publication Number Publication Date
CN1650443A true CN1650443A (zh) 2005-08-03

Family

ID=32067651

Family Applications (1)

Application Number Title Priority Date Filing Date
CN02829486.6A Pending CN1650443A (zh) 2002-08-21 2002-08-21 对于可编程器件使用原子层沉积

Country Status (7)

Country Link
EP (1) EP1559146A1 (fr)
JP (1) JP2005536071A (fr)
CN (1) CN1650443A (fr)
AU (1) AU2002326709A1 (fr)
DE (1) DE10297784T5 (fr)
GB (1) GB2407705A (fr)
WO (1) WO2004032256A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1933208B (zh) * 2005-09-12 2012-06-27 尔必达存储器股份有限公司 相变存储器装置及其制造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050092017A (ko) 2002-12-19 2005-09-16 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 위상 변경 물질을 포함하는 전기 디바이스와 이를 포함하는장치
US7348590B2 (en) * 2005-02-10 2008-03-25 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
KR100663358B1 (ko) * 2005-02-24 2007-01-02 삼성전자주식회사 셀 다이오드들을 채택하는 상변이 기억소자들 및 그 제조방법들
JP4628935B2 (ja) * 2005-11-19 2011-02-09 エルピーダメモリ株式会社 不揮発性半導体記憶装置
JP4860248B2 (ja) * 2005-11-26 2012-01-25 エルピーダメモリ株式会社 相変化メモリ装置および相変化メモリ装置の製造方法
JP4939324B2 (ja) * 2005-12-02 2012-05-23 シャープ株式会社 可変抵抗素子及びその製造方法
JP4691454B2 (ja) * 2006-02-25 2011-06-01 エルピーダメモリ株式会社 相変化メモリ装置およびその製造方法
US7750333B2 (en) 2006-06-28 2010-07-06 Intel Corporation Bit-erasing architecture for seek-scan probe (SSP) memory storage
KR100911473B1 (ko) * 2007-06-18 2009-08-11 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
US8956939B2 (en) * 2013-04-29 2015-02-17 Asm Ip Holding B.V. Method of making a resistive random access memory device
US9362475B2 (en) 2014-03-24 2016-06-07 GM Global Technology Operations LLC Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition
US9741930B2 (en) 2015-03-27 2017-08-22 Intel Corporation Materials and components in phase change memory devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268908A (en) * 1979-02-26 1981-05-19 International Business Machines Corporation Modular macroprocessing system comprising a microprocessor and an extendable number of programmed logic arrays
EP1221178A1 (fr) * 1999-10-15 2002-07-10 ASM America, Inc. Procede de depot de couches minces nanostratifiees sur des surfaces sensibles
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
WO2002009206A1 (fr) * 2000-07-22 2002-01-31 Ovonyx, Inc. Element de memoire programmable electriquement
US6563164B2 (en) * 2000-09-29 2003-05-13 Ovonyx, Inc. Compositionally modified resistive electrode
US6511867B2 (en) * 2001-06-30 2003-01-28 Ovonyx, Inc. Utilizing atomic layer deposition for programmable device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1933208B (zh) * 2005-09-12 2012-06-27 尔必达存储器股份有限公司 相变存储器装置及其制造方法

Also Published As

Publication number Publication date
GB0501967D0 (en) 2005-03-09
DE10297784T5 (de) 2005-07-14
GB2407705A (en) 2005-05-04
AU2002326709A1 (en) 2004-04-23
EP1559146A1 (fr) 2005-08-03
JP2005536071A (ja) 2005-11-24
WO2004032256A1 (fr) 2004-04-15

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication