AU2002326709A1 - Utilizing atomic layer deposition for programmable device - Google Patents

Utilizing atomic layer deposition for programmable device

Info

Publication number
AU2002326709A1
AU2002326709A1 AU2002326709A AU2002326709A AU2002326709A1 AU 2002326709 A1 AU2002326709 A1 AU 2002326709A1 AU 2002326709 A AU2002326709 A AU 2002326709A AU 2002326709 A AU2002326709 A AU 2002326709A AU 2002326709 A1 AU2002326709 A1 AU 2002326709A1
Authority
AU
Australia
Prior art keywords
layer deposition
atomic layer
programmable device
utilizing atomic
utilizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002326709A
Other languages
English (en)
Inventor
Charles H. Dennison
Tyler A. Lowrey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ovonyx Inc
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Publication of AU2002326709A1 publication Critical patent/AU2002326709A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AU2002326709A 2002-08-21 2002-08-21 Utilizing atomic layer deposition for programmable device Abandoned AU2002326709A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/026552 WO2004032256A1 (fr) 2002-08-21 2002-08-21 Utilisation de depot en couche atomique pour dispositif programmable

Publications (1)

Publication Number Publication Date
AU2002326709A1 true AU2002326709A1 (en) 2004-04-23

Family

ID=32067651

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002326709A Abandoned AU2002326709A1 (en) 2002-08-21 2002-08-21 Utilizing atomic layer deposition for programmable device

Country Status (7)

Country Link
EP (1) EP1559146A1 (fr)
JP (1) JP2005536071A (fr)
CN (1) CN1650443A (fr)
AU (1) AU2002326709A1 (fr)
DE (1) DE10297784T5 (fr)
GB (1) GB2407705A (fr)
WO (1) WO2004032256A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE48202E1 (en) 2002-12-19 2020-09-08 Iii Holdings 6, Llc Electric device comprising phase change material
US7348590B2 (en) * 2005-02-10 2008-03-25 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
KR100663358B1 (ko) * 2005-02-24 2007-01-02 삼성전자주식회사 셀 다이오드들을 채택하는 상변이 기억소자들 및 그 제조방법들
JP4817410B2 (ja) * 2005-09-12 2011-11-16 エルピーダメモリ株式会社 相変化メモリ素子およびその製造方法
JP4628935B2 (ja) * 2005-11-19 2011-02-09 エルピーダメモリ株式会社 不揮発性半導体記憶装置
JP4860248B2 (ja) * 2005-11-26 2012-01-25 エルピーダメモリ株式会社 相変化メモリ装置および相変化メモリ装置の製造方法
JP4939324B2 (ja) * 2005-12-02 2012-05-23 シャープ株式会社 可変抵抗素子及びその製造方法
JP4691454B2 (ja) * 2006-02-25 2011-06-01 エルピーダメモリ株式会社 相変化メモリ装置およびその製造方法
US7750333B2 (en) 2006-06-28 2010-07-06 Intel Corporation Bit-erasing architecture for seek-scan probe (SSP) memory storage
KR100911473B1 (ko) * 2007-06-18 2009-08-11 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
US8956939B2 (en) * 2013-04-29 2015-02-17 Asm Ip Holding B.V. Method of making a resistive random access memory device
US9362475B2 (en) 2014-03-24 2016-06-07 GM Global Technology Operations LLC Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition
US9741930B2 (en) 2015-03-27 2017-08-22 Intel Corporation Materials and components in phase change memory devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268908A (en) * 1979-02-26 1981-05-19 International Business Machines Corporation Modular macroprocessing system comprising a microprocessor and an extendable number of programmed logic arrays
AU1208201A (en) * 1999-10-15 2001-04-30 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
WO2002009206A1 (fr) * 2000-07-22 2002-01-31 Ovonyx, Inc. Element de memoire programmable electriquement
US6563164B2 (en) * 2000-09-29 2003-05-13 Ovonyx, Inc. Compositionally modified resistive electrode
US6511867B2 (en) * 2001-06-30 2003-01-28 Ovonyx, Inc. Utilizing atomic layer deposition for programmable device

Also Published As

Publication number Publication date
JP2005536071A (ja) 2005-11-24
CN1650443A (zh) 2005-08-03
GB0501967D0 (en) 2005-03-09
EP1559146A1 (fr) 2005-08-03
WO2004032256A1 (fr) 2004-04-15
GB2407705A (en) 2005-05-04
DE10297784T5 (de) 2005-07-14

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase