AU2002326709A1 - Utilizing atomic layer deposition for programmable device - Google Patents
Utilizing atomic layer deposition for programmable deviceInfo
- Publication number
- AU2002326709A1 AU2002326709A1 AU2002326709A AU2002326709A AU2002326709A1 AU 2002326709 A1 AU2002326709 A1 AU 2002326709A1 AU 2002326709 A AU2002326709 A AU 2002326709A AU 2002326709 A AU2002326709 A AU 2002326709A AU 2002326709 A1 AU2002326709 A1 AU 2002326709A1
- Authority
- AU
- Australia
- Prior art keywords
- layer deposition
- atomic layer
- programmable device
- utilizing atomic
- utilizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000231 atomic layer deposition Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2002/026552 WO2004032256A1 (fr) | 2002-08-21 | 2002-08-21 | Utilisation de depot en couche atomique pour dispositif programmable |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002326709A1 true AU2002326709A1 (en) | 2004-04-23 |
Family
ID=32067651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002326709A Abandoned AU2002326709A1 (en) | 2002-08-21 | 2002-08-21 | Utilizing atomic layer deposition for programmable device |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1559146A1 (fr) |
JP (1) | JP2005536071A (fr) |
CN (1) | CN1650443A (fr) |
AU (1) | AU2002326709A1 (fr) |
DE (1) | DE10297784T5 (fr) |
GB (1) | GB2407705A (fr) |
WO (1) | WO2004032256A1 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003282323A1 (en) * | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Electric device comprising phase change material |
US7348590B2 (en) * | 2005-02-10 | 2008-03-25 | Infineon Technologies Ag | Phase change memory cell with high read margin at low power operation |
KR100663358B1 (ko) * | 2005-02-24 | 2007-01-02 | 삼성전자주식회사 | 셀 다이오드들을 채택하는 상변이 기억소자들 및 그 제조방법들 |
JP4817410B2 (ja) * | 2005-09-12 | 2011-11-16 | エルピーダメモリ株式会社 | 相変化メモリ素子およびその製造方法 |
JP4628935B2 (ja) * | 2005-11-19 | 2011-02-09 | エルピーダメモリ株式会社 | 不揮発性半導体記憶装置 |
JP4860248B2 (ja) * | 2005-11-26 | 2012-01-25 | エルピーダメモリ株式会社 | 相変化メモリ装置および相変化メモリ装置の製造方法 |
JP4939324B2 (ja) * | 2005-12-02 | 2012-05-23 | シャープ株式会社 | 可変抵抗素子及びその製造方法 |
JP4691454B2 (ja) * | 2006-02-25 | 2011-06-01 | エルピーダメモリ株式会社 | 相変化メモリ装置およびその製造方法 |
US7750333B2 (en) | 2006-06-28 | 2010-07-06 | Intel Corporation | Bit-erasing architecture for seek-scan probe (SSP) memory storage |
KR100911473B1 (ko) * | 2007-06-18 | 2009-08-11 | 삼성전자주식회사 | 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법 |
US8956939B2 (en) * | 2013-04-29 | 2015-02-17 | Asm Ip Holding B.V. | Method of making a resistive random access memory device |
US9362475B2 (en) | 2014-03-24 | 2016-06-07 | GM Global Technology Operations LLC | Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition |
US9741930B2 (en) | 2015-03-27 | 2017-08-22 | Intel Corporation | Materials and components in phase change memory devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4268908A (en) * | 1979-02-26 | 1981-05-19 | International Business Machines Corporation | Modular macroprocessing system comprising a microprocessor and an extendable number of programmed logic arrays |
AU1208201A (en) * | 1999-10-15 | 2001-04-30 | Asm America, Inc. | Method for depositing nanolaminate thin films on sensitive surfaces |
US6203613B1 (en) * | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
WO2002009206A1 (fr) * | 2000-07-22 | 2002-01-31 | Ovonyx, Inc. | Element de memoire programmable electriquement |
US6563164B2 (en) * | 2000-09-29 | 2003-05-13 | Ovonyx, Inc. | Compositionally modified resistive electrode |
US6511867B2 (en) * | 2001-06-30 | 2003-01-28 | Ovonyx, Inc. | Utilizing atomic layer deposition for programmable device |
-
2002
- 2002-08-21 AU AU2002326709A patent/AU2002326709A1/en not_active Abandoned
- 2002-08-21 EP EP02761442A patent/EP1559146A1/fr not_active Withdrawn
- 2002-08-21 GB GB0501967A patent/GB2407705A/en not_active Withdrawn
- 2002-08-21 JP JP2004541413A patent/JP2005536071A/ja active Pending
- 2002-08-21 DE DE10297784T patent/DE10297784T5/de not_active Withdrawn
- 2002-08-21 WO PCT/US2002/026552 patent/WO2004032256A1/fr not_active Application Discontinuation
- 2002-08-21 CN CN02829486.6A patent/CN1650443A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2005536071A (ja) | 2005-11-24 |
EP1559146A1 (fr) | 2005-08-03 |
WO2004032256A1 (fr) | 2004-04-15 |
DE10297784T5 (de) | 2005-07-14 |
GB2407705A (en) | 2005-05-04 |
GB0501967D0 (en) | 2005-03-09 |
CN1650443A (zh) | 2005-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |