AU2002368177A1 - Modified contact for programmable devices - Google Patents

Modified contact for programmable devices

Info

Publication number
AU2002368177A1
AU2002368177A1 AU2002368177A AU2002368177A AU2002368177A1 AU 2002368177 A1 AU2002368177 A1 AU 2002368177A1 AU 2002368177 A AU2002368177 A AU 2002368177A AU 2002368177 A AU2002368177 A AU 2002368177A AU 2002368177 A1 AU2002368177 A1 AU 2002368177A1
Authority
AU
Australia
Prior art keywords
programmable devices
modified contact
modified
contact
programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002368177A
Inventor
Stephen J. Hudgens
Tyler A. Lowrey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ovonyx Inc
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Publication of AU2002368177A1 publication Critical patent/AU2002368177A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Contacts (AREA)
AU2002368177A 2002-08-14 2002-08-14 Modified contact for programmable devices Abandoned AU2002368177A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/025895 WO2004017437A1 (en) 2002-08-14 2002-08-14 Modified contact for programmable devices

Publications (1)

Publication Number Publication Date
AU2002368177A1 true AU2002368177A1 (en) 2004-03-03

Family

ID=31886103

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002368177A Abandoned AU2002368177A1 (en) 2002-08-14 2002-08-14 Modified contact for programmable devices

Country Status (6)

Country Link
JP (1) JP2005536052A (en)
CN (1) CN1650442A (en)
AU (1) AU2002368177A1 (en)
DE (1) DE10297772T5 (en)
GB (1) GB2407706A (en)
WO (1) WO2004017437A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6875651B2 (en) * 2003-01-23 2005-04-05 Sharp Laboratories Of America, Inc. Dual-trench isolated crosspoint memory array and method for fabricating same
US6849564B2 (en) * 2003-02-27 2005-02-01 Sharp Laboratories Of America, Inc. 1R1D R-RAM array with floating p-well
KR100593750B1 (en) * 2004-11-10 2006-06-28 삼성전자주식회사 Cross-point nonvolatile memory device adopting binary metal oxide film as data storage material film and manufacturing method
CN100389507C (en) * 2004-12-07 2008-05-21 旺宏电子股份有限公司 Sulfur compound random access internal memory and mfg. method thereof
KR100694188B1 (en) 2005-03-22 2007-03-14 한국표준과학연구원 Memory and manufacturing method thereof
US7601995B2 (en) * 2005-10-27 2009-10-13 Infineon Technologies Ag Integrated circuit having resistive memory cells
US7479671B2 (en) * 2006-08-29 2009-01-20 International Business Machines Corporation Thin film phase change memory cell formed on silicon-on-insulator substrate
KR100764056B1 (en) 2006-09-14 2007-10-08 삼성전자주식회사 Phase changeable device and method of fabricating the same
KR100782496B1 (en) 2006-11-09 2007-12-05 삼성전자주식회사 Methods fabricating of semiconductor devices having self-aligned cell diodes and methods fabricating of phase change memory devices using the same
DE102007021761B4 (en) * 2007-05-09 2015-07-16 Adesto Technology Corp., Inc. Resistor switching element, memory devices, memory module, method for producing a resistive switching element and method for producing a resistive memory device
TW200847398A (en) * 2007-05-16 2008-12-01 Ind Tech Res Inst Phase-change memory element
JP4636133B2 (en) * 2008-07-22 2011-02-23 東京エレクトロン株式会社 Method and apparatus for modifying titanium nitride film
JP5342189B2 (en) * 2008-08-06 2013-11-13 株式会社日立製作所 Nonvolatile memory device and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL61678A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Programmable cell and programmable electronic arrays comprising such cells
US6563164B2 (en) * 2000-09-29 2003-05-13 Ovonyx, Inc. Compositionally modified resistive electrode
US6555860B2 (en) * 2000-09-29 2003-04-29 Intel Corporation Compositionally modified resistive electrode
US6511862B2 (en) * 2001-06-30 2003-01-28 Ovonyx, Inc. Modified contact for programmable devices

Also Published As

Publication number Publication date
GB0501969D0 (en) 2005-03-09
DE10297772T5 (en) 2005-11-03
GB2407706A (en) 2005-05-04
WO2004017437A1 (en) 2004-02-26
CN1650442A (en) 2005-08-03
JP2005536052A (en) 2005-11-24

Similar Documents

Publication Publication Date Title
AU2003289047A1 (en) Needle-insertion device
AU2003237647A1 (en) Lid-positioning device
AU2003281272A1 (en) Fireblocking device
AU2003216002A1 (en) Efficient mmicrofluidic devices
AU2003293034A1 (en) Trans-thermoelectric device
AU2003304110A1 (en) Programmable semiconductor device
AU2003245720A1 (en) Electroptic device
AU2003271698A1 (en) Displacing device
AU2003285825A1 (en) Electrical contact
AU2003241030A1 (en) Opteolectronic devices
AU2003244130A1 (en) Switch device
AU2002368177A1 (en) Modified contact for programmable devices
AU2003264733A1 (en) Photorefractive devices
TW551630U (en) Contact
EP1341200A3 (en) Switch device
AU2003266556A1 (en) Stocker apparatus
AU2003247851A1 (en) Camera-attachable device
AU2003202491A1 (en) Electrode device for iontoforesis
AU2003246290A1 (en) Box-assembling device
AU2002336023A1 (en) Contact screw
AU2003265689A1 (en) Replacement memory device
AU2003242918A1 (en) Module-testing device
AU2003304212A1 (en) Explosive-activated safe-arm device
AU2003246529A1 (en) Paletting device
AU2003286097A1 (en) Moving device

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase