AU2002368177A1 - Modified contact for programmable devices - Google Patents
Modified contact for programmable devicesInfo
- Publication number
- AU2002368177A1 AU2002368177A1 AU2002368177A AU2002368177A AU2002368177A1 AU 2002368177 A1 AU2002368177 A1 AU 2002368177A1 AU 2002368177 A AU2002368177 A AU 2002368177A AU 2002368177 A AU2002368177 A AU 2002368177A AU 2002368177 A1 AU2002368177 A1 AU 2002368177A1
- Authority
- AU
- Australia
- Prior art keywords
- programmable devices
- modified contact
- modified
- contact
- programmable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/52—Structure characterized by the electrode material, shape, etc.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Contacts (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2002/025895 WO2004017437A1 (en) | 2002-08-14 | 2002-08-14 | Modified contact for programmable devices |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002368177A1 true AU2002368177A1 (en) | 2004-03-03 |
Family
ID=31886103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002368177A Abandoned AU2002368177A1 (en) | 2002-08-14 | 2002-08-14 | Modified contact for programmable devices |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP2005536052A (en) |
CN (1) | CN1650442A (en) |
AU (1) | AU2002368177A1 (en) |
DE (1) | DE10297772T5 (en) |
GB (1) | GB2407706A (en) |
WO (1) | WO2004017437A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6875651B2 (en) * | 2003-01-23 | 2005-04-05 | Sharp Laboratories Of America, Inc. | Dual-trench isolated crosspoint memory array and method for fabricating same |
US6849564B2 (en) * | 2003-02-27 | 2005-02-01 | Sharp Laboratories Of America, Inc. | 1R1D R-RAM array with floating p-well |
KR100593750B1 (en) * | 2004-11-10 | 2006-06-28 | 삼성전자주식회사 | Cross-point nonvolatile memory device adopting binary metal oxide film as data storage material film and manufacturing method |
CN100389507C (en) * | 2004-12-07 | 2008-05-21 | 旺宏电子股份有限公司 | Sulfur compound random access internal memory and mfg. method thereof |
KR100694188B1 (en) | 2005-03-22 | 2007-03-14 | 한국표준과학연구원 | Memory and manufacturing method thereof |
US7601995B2 (en) * | 2005-10-27 | 2009-10-13 | Infineon Technologies Ag | Integrated circuit having resistive memory cells |
US7479671B2 (en) * | 2006-08-29 | 2009-01-20 | International Business Machines Corporation | Thin film phase change memory cell formed on silicon-on-insulator substrate |
KR100764056B1 (en) | 2006-09-14 | 2007-10-08 | 삼성전자주식회사 | Phase changeable device and method of fabricating the same |
KR100782496B1 (en) | 2006-11-09 | 2007-12-05 | 삼성전자주식회사 | Methods fabricating of semiconductor devices having self-aligned cell diodes and methods fabricating of phase change memory devices using the same |
DE102007021761B4 (en) * | 2007-05-09 | 2015-07-16 | Adesto Technology Corp., Inc. | Resistor switching element, memory devices, memory module, method for producing a resistive switching element and method for producing a resistive memory device |
TW200847398A (en) * | 2007-05-16 | 2008-12-01 | Ind Tech Res Inst | Phase-change memory element |
JP4636133B2 (en) * | 2008-07-22 | 2011-02-23 | 東京エレクトロン株式会社 | Method and apparatus for modifying titanium nitride film |
JP5342189B2 (en) | 2008-08-06 | 2013-11-13 | 株式会社日立製作所 | Nonvolatile memory device and manufacturing method thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL61678A (en) * | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Programmable cell and programmable electronic arrays comprising such cells |
US6555860B2 (en) * | 2000-09-29 | 2003-04-29 | Intel Corporation | Compositionally modified resistive electrode |
US6563164B2 (en) * | 2000-09-29 | 2003-05-13 | Ovonyx, Inc. | Compositionally modified resistive electrode |
US6511862B2 (en) * | 2001-06-30 | 2003-01-28 | Ovonyx, Inc. | Modified contact for programmable devices |
-
2002
- 2002-08-14 DE DE10297772T patent/DE10297772T5/en not_active Withdrawn
- 2002-08-14 GB GB0501969A patent/GB2407706A/en not_active Withdrawn
- 2002-08-14 CN CN02829457.2A patent/CN1650442A/en active Pending
- 2002-08-14 AU AU2002368177A patent/AU2002368177A1/en not_active Abandoned
- 2002-08-14 JP JP2004529027A patent/JP2005536052A/en active Pending
- 2002-08-14 WO PCT/US2002/025895 patent/WO2004017437A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN1650442A (en) | 2005-08-03 |
GB2407706A (en) | 2005-05-04 |
WO2004017437A1 (en) | 2004-02-26 |
JP2005536052A (en) | 2005-11-24 |
GB0501969D0 (en) | 2005-03-09 |
DE10297772T5 (en) | 2005-11-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |