CN1628370B - 处理碳化硅衬底改善外延沉积的方法与形成的结构和器件 - Google Patents

处理碳化硅衬底改善外延沉积的方法与形成的结构和器件 Download PDF

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Publication number
CN1628370B
CN1628370B CN038034689A CN03803468A CN1628370B CN 1628370 B CN1628370 B CN 1628370B CN 038034689 A CN038034689 A CN 038034689A CN 03803468 A CN03803468 A CN 03803468A CN 1628370 B CN1628370 B CN 1628370B
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silicon carbide
implanted
carbide wafer
wafer
ions
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CN1628370A (zh
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戴维斯·安德鲁·麦克卢尔
亚历山大·苏沃洛夫
约翰·亚当·埃德蒙
小戴维·比尔兹利·斯莱特
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Wolfspeed Inc
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Cree Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
CN038034689A 2002-02-08 2003-02-07 处理碳化硅衬底改善外延沉积的方法与形成的结构和器件 Expired - Lifetime CN1628370B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35503402P 2002-02-08 2002-02-08
US60/355,034 2002-02-08
PCT/US2003/003602 WO2003067637A2 (en) 2002-02-08 2003-02-07 Methods of treating a silicon carbide substrate for improved epitaxial deposition

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CN201110068455.3A Division CN102163664B (zh) 2002-02-08 2003-02-07 处理碳化硅衬底改善外延沉积的方法与形成的结构和器件

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CN1628370A CN1628370A (zh) 2005-06-15
CN1628370B true CN1628370B (zh) 2011-05-18

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CN038034689A Expired - Lifetime CN1628370B (zh) 2002-02-08 2003-02-07 处理碳化硅衬底改善外延沉积的方法与形成的结构和器件
CN201110068455.3A Expired - Lifetime CN102163664B (zh) 2002-02-08 2003-02-07 处理碳化硅衬底改善外延沉积的方法与形成的结构和器件

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EP (1) EP1488450B1 (enExample)
JP (2) JP4846981B2 (enExample)
KR (1) KR20040093712A (enExample)
CN (2) CN1628370B (enExample)
AU (1) AU2003210882A1 (enExample)
CA (1) CA2474883A1 (enExample)
WO (1) WO2003067637A2 (enExample)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
CN101673673B (zh) * 2009-09-22 2013-02-27 上海宏力半导体制造有限公司 外延片形成方法及使用该方法形成的外延片
JP5717674B2 (ja) * 2012-03-02 2015-05-13 株式会社東芝 半導体装置の製造方法
KR101926694B1 (ko) * 2012-05-30 2018-12-07 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 및 이의 제조 방법
DE102016107557A1 (de) * 2016-04-22 2017-10-26 Nexwafe Gmbh Siliziumwafer für ein elektronisches Bauelement und Verfahren zu dessen Herstellung
CN110006727A (zh) * 2019-04-10 2019-07-12 深圳市锐骏半导体股份有限公司 一种离子注入机稳定性的监控方法
CN112522781B (zh) * 2021-02-18 2021-04-23 中芯集成电路制造(绍兴)有限公司 碳化硅衬底上的缓冲层及其形成方法
EP4324961A1 (en) * 2022-08-17 2024-02-21 SiCrystal GmbH Method for producing a bulk sic single crystal with improved quality using a sic seed crystal with a temporary protective oxide layer, and sic seed crystal with protective oxide layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US6187606B1 (en) * 1997-10-07 2001-02-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
DE19944144A1 (de) * 1999-09-15 2001-04-12 Rossendorf Forschzent Verfahren zur Herstellung von Kontakten und Leitbahnen in oder auf kristallinen Siliziumkarbid-Halbleitersubstraten

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104324A (ja) * 1986-10-20 1988-05-09 Fujitsu Ltd 半導体結晶の成長方法
JPH02240988A (ja) * 1989-03-15 1990-09-25 Hitachi Ltd 半導体レーザ
JPH07326793A (ja) * 1994-05-31 1995-12-12 Showa Denko Kk 化合物半導体発光ダイオード
JPH08222812A (ja) * 1995-02-17 1996-08-30 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体の結晶成長方法
JPH08288500A (ja) * 1995-04-20 1996-11-01 Hitachi Ltd 炭化珪素半導体素子とその製造法及び用途
JPH098353A (ja) * 1995-06-14 1997-01-10 Hitachi Cable Ltd エピタキシャルウェハ及びその製造方法並びに発光ダイオード
JP4166885B2 (ja) * 1998-05-18 2008-10-15 富士通株式会社 光半導体装置およびその製造方法
JP3956487B2 (ja) * 1998-06-22 2007-08-08 富士電機デバイステクノロジー株式会社 炭化けい素半導体素子の製造方法
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
US6329088B1 (en) * 1999-06-24 2001-12-11 Advanced Technology Materials, Inc. Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>
JP2001237248A (ja) * 2000-02-21 2001-08-31 Mitsubishi Heavy Ind Ltd 半導体装置及びその製造方法
JP3889910B2 (ja) * 2000-03-10 2007-03-07 三菱化学株式会社 半導体発光装置およびその製造方法
JP4403629B2 (ja) * 2000-04-06 2010-01-27 株式会社デンソー 半導体発光装置
JP2001332508A (ja) * 2000-05-23 2001-11-30 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP2002016013A (ja) * 2000-06-27 2002-01-18 Nissan Motor Co Ltd 炭化珪素半導体装置の製造方法
KR100522758B1 (ko) * 2000-06-28 2005-10-21 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP2002223040A (ja) * 2001-01-29 2002-08-09 Ricoh Co Ltd 半導体発光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US6187606B1 (en) * 1997-10-07 2001-02-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
DE19944144A1 (de) * 1999-09-15 2001-04-12 Rossendorf Forschzent Verfahren zur Herstellung von Kontakten und Leitbahnen in oder auf kristallinen Siliziumkarbid-Halbleitersubstraten

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
CAMPOS F J ET AL.CONFOCAL MICRO-RAMAN CHARACTERIZATIONOFLATTICE DAMAGE IN HIGH ENERGYALUMINUMIMPLANTED 6H-SIC.JOURNAL OF APPLIED PHYSICS85 1.1999,85(1),99-104.
CAMPOS F J ET AL.CONFOCAL MICRO-RAMAN CHARACTERIZATIONOFLATTICE DAMAGE IN HIGH ENERGYALUMINUMIMPLANTED 6H-SIC.JOURNAL OF APPLIED PHYSICS85 1.1999,85(1),99-104. *
DUNCAN W M ET AL.A SINGLE STEP SELECTIVE IMPLANTATIONTECHNOLOGY FOR MULTIPLE DOPED LAYERS USINGPROXIMITY ANNEALING.IEEE ELECTRON DEVICE LETTERS1 12.1981,1(12),309-311.
DUNCAN W M ET AL.A SINGLE STEP SELECTIVE IMPLANTATIONTECHNOLOGY FOR MULTIPLE DOPED LAYERS USINGPROXIMITY ANNEALING.IEEE ELECTRON DEVICE LETTERS1 12.1981,1(12),309-311. *
HOVEL H J.IMPLANT PROFILE ADJUSTMENT WITH GAALAS CAPS.IBM TECHNICAL DISCLOSURE BULLETIN27 9.1985,27(9),5360-5361.
HOVEL H J.IMPLANT PROFILE ADJUSTMENT WITH GAALAS CAPS.IBM TECHNICAL DISCLOSURE BULLETIN27 9.1985,27(9),5360-5361. *
SCOTT M B ET AL.HIGH TEMPERATURE IMPLANTATION STUDY OF P+ANDN+ IMPLANTED EPITAXIAL N-TYPE 4H-SIC.PROCEEDINGS OF THE 25TH INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS162.1998,162763-768. *

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Publication number Publication date
CN1628370A (zh) 2005-06-15
EP1488450B1 (en) 2015-04-08
AU2003210882A1 (en) 2003-09-02
KR20040093712A (ko) 2004-11-08
JP2005517296A (ja) 2005-06-09
JP4846981B2 (ja) 2011-12-28
CN102163664B (zh) 2014-07-23
EP1488450A2 (en) 2004-12-22
WO2003067637A3 (en) 2004-01-15
JP2010118672A (ja) 2010-05-27
CA2474883A1 (en) 2003-08-14
JP5528120B2 (ja) 2014-06-25
AU2003210882A8 (en) 2003-09-02
CN102163664A (zh) 2011-08-24
WO2003067637A2 (en) 2003-08-14

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