CN1619798A - 具散热器的球门阵列封装体及其形成方法 - Google Patents
具散热器的球门阵列封装体及其形成方法 Download PDFInfo
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- CN1619798A CN1619798A CNA2004100913270A CN200410091327A CN1619798A CN 1619798 A CN1619798 A CN 1619798A CN A2004100913270 A CNA2004100913270 A CN A2004100913270A CN 200410091327 A CN200410091327 A CN 200410091327A CN 1619798 A CN1619798 A CN 1619798A
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Abstract
本发明揭示一种具散热器的球门阵列封装体及其形成方法。其形成方法包含:提供一半导体芯片,其固定于一球门阵列基板;在上述球门阵列基板上,将上述半导体芯片封入一封装胶体;将一散热器置于上述球门阵列基板上,并使上述封装胶体与上述散热器之间具有一间隔;以及至少于上述散热器与上述封装胶体之间的上述间隔内,置入一散热膏(thermal grease);从而形成本发明的具散热器的球门阵列封装体,可以先将散热膏置于上述封装胶体,再将上述散热器置于上述球门阵列基板上。
Description
技术领域
本发明有关于半导体芯片的封装,特别是关于一种球门阵列(ball gridarray;BGA)封装体。
背景技术
因为具有高接脚数与高速的性能,球门阵列封装体已成为先进集成电路产品主流的封装型式。上述先进集成电路产品在运作过程中会产生大量的热,因此需要加上散热器(heat spreader)而成为具散热器的球门阵列(heatspreader ball grid array;HSBGA)封装体,以帮助散热。然而,上述具散热器的球门阵列封装体会在热循环/热冲击试验时产生较高的应力,且低介电常数(low k;LK)材料的强度较低,而在上述具散热器的球门阵列封装体中发生龟裂或脱层,而在上述检定试验中被判定拒收。低介电常数材料的介电常数小于3.9(二氧化硅的介电常数),在先进的微电子组件中作为隔离相邻的金属导线的材料(称为层间介电层或金属间介电层)。低介电常数材料可降低导线间的串音效应(cross talk)。所谓的低介电常数芯片(LK die),即为具有低介电常数的金属间介电层的芯片,亦即,其金属间介电层是使用低介电常数材料。
热循环试验是用以测试受测物在极高温与极低温下的耐受能力,并使其曝露在极高温与极低温之间的温度循环。热冲击试验是用以评估凝态组件曝露在大幅度的温差之下,抵抗作用于其上的热应力的能力。热冲击会导致芯片的龟裂或脱层、封装材的开口或封装体的裂缝、以及电性的改变。当热循环/热冲击试验超过30次循环时,就视为破坏性的试验。
覆晶封装体的成本约为具散热器的球门阵列封装体的10倍,将其取代具散热器的球门阵列封装体时,并不具成本效益。
Suzuki等人在美国专利US 5,977,633中揭露一半导体组件,其具有镂空的金属基封装基板;Bechtel等人在美国专利US 5,223,741中揭露一集成电路的封装结构;Nahesh等人在美国专利US 5,585,671中揭露一低热绝缘性(thermal resistance)的封装体,适用于高能覆晶芯片;Novotny等人在美国专利US 6,462,410中揭露具散热器的集成电路组件;Kucharek在美国专利US 4,748,495中揭露具散热器的多芯片模块的封装体。
发明内容
有鉴于此,本发明的主要目的是提供一种具散热器的球门阵列封装体及其形成方法,以改善其热循环/热冲击试验时的可靠度。
为达成本发明的上述目的,本发明提供一种具散热器的球门阵列封装体及其形成方法,如以下所述。首先,提供一半导体芯片,其固定于一球门阵列基板。接下来,在上述球门阵列基板上,将上述半导体芯片封入一封装胶体。然后,将一散热器置于上述球门阵列基板上,并使上述封装胶体与上述散热器之间具有一间隔。以及,至少于上述散热器与上述封装胶体之间的上述间隔内,置入一散热膏(thermal grease),而藉以形成本发明的具散热器的球门阵列封装体。亦可以将散热膏置于上述封装胶体上后,再将上述散热器置于上述球门阵列基板上。本发明亦包含上述方法所形成的具散热器的球门阵列封装体。
附图说明
图1为一剖面图,是显示用于本发明第一与第二实施例的球门阵列封装结构。
图2A为一剖面图,是显示本发明第一实施例的结构。
图2B为一剖面图,是显示本发明第二实施例的结构。
符号说明:
10~半导体芯片 12~球门阵列基板
14~球状接合物 16~导线
18~封装胶体 20~散热器
21~周边延伸部 22~环氧树脂黏着剂
24~散热器 30~间隔
32~散热膏 34~间隔
36~散热膏 40~支柱
42~强化材 44~环氧树脂黏着剂
46~环氧树脂黏着剂 100~球门阵列封装结构
102、104~具散热器的球门阵列封装体
具体实施方式
为了让本发明的上述和其它目的、特征、和优点能更明显易懂,下文特举一较佳实施例,并配合所附图标,作详细说明如下:
请参考图1,为一剖面图,是显示使用于下列本发明的第一及第二实施例的球门阵列封装结构100。
球门阵列封装结构100包含一半导体芯片10,置于并藉由例如导线16电性连接于一基板12上。基板12包含多个球状接合物14,置于与半导体芯片10所在,相反侧的表面上。
半导体芯片10较好是包含硅、锗、或硅锗(silicon germanium;SiGe),而更好为硅。当半导体芯片10为硅时,其热膨胀系数较好为2.5~3.5,更好为2.8;当半导体芯片10为锗时,其热膨胀系数较好为5.5~6.5,更好为6.1。
球状接合物较好为含铅的锡铅共晶合金(63% Sn-37% Pb)、无铅的锡银合金(96.5% Sn-3.5% Ag)、锡银铜合金(95.5%Sn-3.8%Ag-0.7%Cu)、或锡银铜锑合金(96.2%Sn-2.5%Ag-0.8%Cu-0.5%Sb),如果有环保的考量时,较好以锡银合金取代目前最常使用的锡铅共晶合金。
将半导体芯片10与导线16封入封装胶体18内。封装胶体18较好为包含:
(a)环氧树脂:其含量较好为10~20wt%。其作为黏结剂(binder),可增加成型性(moldability)、硬化速度、液化时的黏度、与抗孔洞性(resistanceto voiding)。其亦可减少封装胶体偏移与导线偏移(wire sweep);其又可以控制离子浓度,例如为酚醛树脂(Cresol-Novolac epoxy)(高温)或双酚醛类树酯(Diglycidyl Ether of Bisphenol A;DGEBA)。
(b)固化剂(curing agent):其含量较好为5~15wt%。其功能为增加成型性、改善电性、增加抗热性与抗湿性。例如为胺类、酚类、或酸酐(acidanhydrides)类。
(c)催化剂:低含量,较好为约1wt%。其功能为增加聚合率以减少封胶时的硬化时间。例如为胺类、咪唑类(imidazoles)、有机磷化氢类(organophosphines)、尿素类(ureas)、路易士酸类(Lewis acids)、或较好为上述的有机盐类。
(d)偶合剂(coupling agent):低含量,较好为小于2wt%。其功能为提升聚合物本体与无机填充物之间的界面黏着性(interfacial adhesion)、调整封装胶体的黏度。例如为硅烷类、钛酸盐类、铝的螯合物(aluminumchelates)、或锆铝酸盐类(zircoaluminates)。
(e)填充物(filler):其含量较好为50~75wt%。其功能为降低封装胶体的热膨胀系数、增加导热性、改善电性与机械性质、减少在分模线(partingline)的溢胶(resin bleed)、及减少收缩量。例如为磨碎的熔化硅砂(groundfused silica)(被广泛使用)、氧化铝。
(f)防火剂(flame retardant):其含量较好为2~5wt%。其功能为延缓着火的时间。例如为溴化环氧树脂、三氧化二锑。
(g)脱膜剂(mold-release agent):微量。其功能为帮助将封装体与模具分离、减少水气入侵与腐蚀。例如为聚硅氧(silicone)、碳氢化合物蜡(hydrocarbon waxes)、含有机酸根的盐类。
(h)着色剂:其含量较好为约5wt%。其功能为降低光活性(photonicactivity)、提供组件可见度及/或美观性(aesthetics)。例如为碳黑。
(i)应力松弛剂:其含量较好为约1wt%。其功能为抑制裂缝的增殖、减少裂缝的产生、降低热机械收缩。例如为聚硅氧、丙烯睛-丁二烯(Acrylontrile-Butadiene)橡胶、聚丁基甲酯(polybutyl acrylate)
封装胶体18的热膨胀系数较好为5~12或15,更好则约为7.0。
第一实施例
请参考图2A,为一剖面图,是显示本发明第一实施例的具散热器的球门阵列封装体102。
散热器20是置于并覆于球门阵列封装结构100上,并与封入半导体芯片10的封装胶体18之间具有一间隔30。散热器20是类似于倒的方形烤盘的形状,并具有一周边延伸部21。周边延伸部21是如图2A所示,藉由环氧树脂黏着剂22固定于基板12。
散热器20较好为包含铜、铝、镀铬的铜、镀铬的铝、镀镍的铜、镀镍的铝、不锈钢、或其它材料,而更好为铜。散热器20的热膨胀系数依材质不同,较好为10~25,更好约为17,即是其材质为铜时。
之后更可以在进行其它制程。例如可使用黏着剂将散热器20置于一印刷电路板或一强化材上。
本发明的一重要特征,是将散热膏32置入并填入散热器20与封装胶体18之间的间隔30。虽然不需要使散热膏32完全填满间隔30,但是填满度愈高,效果愈好。较好为在开始充填散热膏32之处,留下一小段间隔30,预留散热膏32膨胀的空间以释放应力。
亦可以先将散热膏32置于封装胶体18上后,在将散热器20置于其上。
散热膏32,亦称为热导接口物质(therma linterface materials;TIM),较好为一胶体(硅胶),内含导热粒子例如氧化锌、氧化铝、氮化铝、氮化硼、陶瓷填充物、或其它具导热性的材料。
散热膏32为一导热性的材料,在热膨胀系数例如约为17的散热器20与热膨胀系数例如约为7的封装胶体18之间,作为一导热界面。如此可减少两者间的热应力,并已证实在本发明第一实施例的具散热器的球门阵列封装体102中,减少了50%~90%(依据所选择的散热膏32种类及其填充方式而定)的裂缝与脱层的情形。具散热器的球门阵列封装体的散热性能优于覆晶型式的球门阵列封装体,且不会受到高应力而损伤到具低介电常数材料的芯片。
第二实施例
请参考图2B,为一剖面图,是显示本发明第一实施例的具散热器的球门阵列封装体104。
在球门阵列封装结构100的封装胶体18的周为形成一支柱40与其间隔配置(支柱40大体呈四方环状)。支柱40包含一强化材42,藉由环氧树脂黏着剂44固定于基板12。强化材42较好是包含铜、铝、镀铬的铜、镀铬的铝、镀镍的铜、镀镍的铝、或其它材料例如不锈钢,更好为铜。
散热器24是藉由环氧树脂黏着剂,固定于支柱40的上端,因此散热器24是覆于球门阵列封装结构100上而与封入半导体芯片10的封装胶体18之间具有一间隔34。
散热器24较好为包含铜、铝、镀铬的铜、镀铬的铝、镀镍的铜、或镀镍的铝,而更好为铜。散热器20的热膨胀系数依材质不同,较好为10~25,更好约为17,即是其材质为铜时。
之后更可以在进行其它制程。例如可使用黏着剂将散热器24置于一印刷电路板或一强化材上。
本发明的一重要特征,是将散热膏36置入并填入散热器24与封装胶体18之间的间隔34。较好为在开始充填散热膏36之处,留下一小段间隔34,预留散热膏36膨胀的空间以释放应力。
亦可以先将散热膏36置于封装胶体18上后,在将散热器24置于其上。
散热膏36,亦称为热导接口物质(thermal interface materials;TIM),较好为一胶体(硅胶),内含导热粒子例如氧化锌、氧化铝、氮化铝、氮化硼、陶瓷填充物、或其它具导热性的材料。
散热膏36为一导热性的材料,在热膨胀系数例如约为17的散热器24与热膨胀系数例如约为7的封装胶体18之间,作为一导热界面。如此可减少两者间的热应力,并已证实在本发明第二实施例的具散热器的球门阵列封装体104中,减少了50%~90%(依据所选择的散热膏36种类及其填充方式而定)的裂缝与脱层的情形。具散热器的球门阵列封装体的散热性能优于覆晶型式的球门阵列封装体,且不会受到高应力而损伤到具低介电常数材料的芯片。
在本发明第一、二实施例的具散热器的球门阵列封装体102、104中,散热膏32、36是作为缓冲层以释放分别来自散热器20、24的应力,并将热量由封装胶体18传导至散热器20、24,而将热量自半导体芯片10/封装胶体18排除。散热膏32、36须具有高导热性、高黏度、与高弹性。
本发明是具有以下优点:
(1)可将具散热器的球门阵列封装应用于具低介电常数材料的芯片;
(2)降低具低介电常数材料的芯片所受的应力冲击;
(3)高散热性;
(4)降低封装成本;
(5)不须变更现有制程设备;
(6)封装胶体的选择性较大。
虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明,任何熟习此技艺者,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,因此本发明的保护范围当视所附的权利要求范围所界定者为准。
Claims (30)
1.一种具散热器的球门阵列封装体的形成方法,包含:
提供一半导体芯片,其固定于一球门阵列基板;
在该球门阵列基板上,将该半导体芯片封入一封装胶体;
将一散热器置于该球门阵列基板上,并使该封装胶体与该散热器之间具有一间隔;以及
至少于该散热器与该封装胶体之间的该间隔内,置入一散热膏。
2.根据权利要求1所述的具散热器的球门阵列封装体的形成方法,其中该封装胶体包含环氧树脂与固化剂;该散热器包含铜、铝、镀铬的铜、镀铬的铝、镀镍的铜、或镀镍的铝。
3.根据权利要求1所述的具散热器的球门阵列封装体的形成方法,其中散热膏具有内含导热粒子的硅胶。
4.根据权利要求1所述的具散热器的球门阵列封装体的形成方法,更包含于该半导体芯片与该封装胶体以外的该球门阵列基板上,形成一支柱,且该散热器是置于该支柱上。
5.根据权利要求1所述的具散热器的球门阵列封装体的形成方法,更包含于该半导体芯片与该封装胶体以外的该球门阵列基板上,形成一支柱,且该支柱包含一强化材,而该散热器是置于该支柱上。
6.一种具散热器的球门阵列封装体的形成方法,包含:
提供一半导体芯片,其固定于一球门阵列基板;
在该球门阵列基板上,将该半导体芯片封入一封装胶体;
将一散热膏置于该半导体芯片上;
将一散热器置于该球门阵列基板与该散热膏上;以及
将该散热器置于一印刷电路板或具有强化材的黏着剂上。
7.根据权利要求6所述的具散热器的球门阵列封装体的形成方法,其中该封装胶体包含环氧树脂与固化剂;该散热器包含铜、铝、镀铬的铜、镀铬的铝、镀镍的铜、或镀镍的铝。
8.根据权利要求6所述的具散热器的球门阵列封装体的形成方法,其中散热膏具有内含导热粒子的硅胶。
9.根据权利要求6所述的具散热器的球门阵列封装体的形成方法,更包含于该半导体芯片与该封装胶体以外的该球门阵列基板上,形成一支柱,且该散热器是置于该支柱上。
10.根据权利要求6所述的具散热器的球门阵列封装体的形成方法,更包含于该半导体芯片与该封装胶体以外的该球门阵列基板上,形成一支柱,且该散热器包含一强化材,而该散热器是置于该支柱上。
11.一种具散热器的球门阵列封装体,包含:
一球门阵列基板;
一半导体芯片,其固定于一球门阵列基板;
一封装胶体在该球门阵列基板上,将该半导体芯片封入于其中;
一散热器置于该球门阵列基板上,与该封装胶体之间具有一间隔;以及
一散热膏,至少于该散热器与该封装胶体之间的该间隔内。
12.根据权利要求11所述的具散热器的球门阵列封装体,其中该封装胶体包含环氧树脂与固化剂;该散热器包含铜、铝、镀铬的铜、镀铬的铝、镀镍的铜、或镀镍的铝。
13.根据权利要求11所述的具散热器的球门阵列封装体,其中散热膏具有内含导热粒子的硅胶,该导热粒子包含氧化锌、氧化铝、氮化铝、氮化硼、陶瓷填充物、或其它具导热性的材料。
14.根据权利要求11所述的具散热器的球门阵列封装体,其中该封装胶体的热膨胀系数为5~15;该散热器的热膨胀系数为10~25。
15.根据权利要求11所述的具散热器的球门阵列封装体,其中该半导体芯片为硅芯片,其热膨胀系数为2.5~3.5。
16.根据权利要求11所述的具散热器的球门阵列封装体,其中该散热器具有倒的方形烤盘的形状,并具有一周边延伸部;该散热器是藉由该周边延伸部,并使用一环氧树脂黏着剂置于该球门阵列基板上。
17.根据权利要求11所述的具散热器的球门阵列封装体,其中该散热器具有倒的方形烤盘的形状,并具有一周边延伸部;且该散热膏填满该间隔。
18.根据权利要求11所述的具散热器的球门阵列封装体,更包含一支柱,形成于该半导体芯片与该封装胶体以外的该球门阵列基板上,且该散热器是置于该支柱上。
19.根据权利要求11所述的具散热器的球门阵列封装体,更包含一支柱,形成于该半导体芯片与该封装胶体以外的该球门阵列基板上,且该支柱包含一强化材,而该散热器是置于该支柱上。
20.根据权利要求11所述的具散热器的球门阵列封装体,更包含一支柱,形成于该半导体芯片与该封装胶体以外的该球门阵列基板上,且该支柱包含一铜强化材,而该散热器是置于该支柱上。
21.一种具散热器的球门阵列封装体,包含:
一球门阵列基板;
一半导体芯片,其固定于一球门阵列基板;
一封装胶体在该球门阵列基板上,将该半导体芯片封入于其中;
一散热膏,于该封装胶体上;
一散热器置于该球门阵列基板、该封装胶体、与该散热膏上;以及
一印刷电路板或强化材置于将该散热器上。
22.根据权利要求21所述的具散热器的球门阵列封装体,其中该封装胶体包含环氧树脂与固化剂;该散热器包含铜、铝、镀铬的铜、镀铬的铝、镀镍的铜、或镀镍的铝。
23.根据权利要求21所述的具散热器的球门阵列封装体,其中散热膏具有内含导热粒子的硅胶,该导热粒子包含氧化锌、氧化铝、氮化铝、氮化硼、陶瓷填充物、或其它具导热性的材料。
24.根据权利要求21所述的具散热器的球门阵列封装体,其中该封装胶体的热膨胀系数为5~15;该散热器的热膨胀系数为10~25。
25.根据权利要求21所述的具散热器的球门阵列封装体,其中该半导体芯片为硅芯片,其热膨胀系数为2.5~3.5。
26.根据权利要求21所述的具散热器的球门阵列封装体,其中该散热器具有倒的方形烤盘的形状,并具有一周边延伸部;该散热器是藉由该周边延伸部,并使用一环氧树脂黏着剂置于该球门阵列基板上。
27.根据权利要求21所述的具散热器的球门阵列封装体,其中该散热器具有倒的方形烤盘的形状,并具有一周边延伸部;且该散热膏填满于该封装胶体与该散热器之间。
28.根据权利要求21所述的具散热器的球门阵列封装体,更包含一支柱,形成于该半导体芯片与该封装胶体以外的该球门阵列基板上,且该散热器是置于该支柱上。
29.根据权利要求21所述的具散热器的球门阵列封装体,更包含一支柱,形成于该半导体芯片与该封装胶体以外的该球门阵列基板上,且该支柱包含一强化材,而该散热器是置于该支柱上。
30.根据权利要求21所述的具散热器的球门阵列封装体,更包含一支柱,形成于该半导体芯片与该封装胶体以外的该球门阵列基板上,且该支柱包含一铜强化材,而该散热器是置于该支柱上。
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US10/718,192 US7180173B2 (en) | 2003-11-20 | 2003-11-20 | Heat spreader ball grid array (HSBGA) design for low-k integrated circuits (IC) |
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CNB2004100913270A Expired - Fee Related CN100350599C (zh) | 2003-11-20 | 2004-11-19 | 具散热器的球门阵列封装体及其形成方法 |
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US7180173B2 (en) | 2007-02-20 |
CN2760755Y (zh) | 2006-02-22 |
US20050110140A1 (en) | 2005-05-26 |
TW200527630A (en) | 2005-08-16 |
CN100350599C (zh) | 2007-11-21 |
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