WO2013075384A1 - Ball grid array (bga) packaging structures and method for manufacruring the same - Google Patents

Ball grid array (bga) packaging structures and method for manufacruring the same Download PDF

Info

Publication number
WO2013075384A1
WO2013075384A1 PCT/CN2012/000023 CN2012000023W WO2013075384A1 WO 2013075384 A1 WO2013075384 A1 WO 2013075384A1 CN 2012000023 W CN2012000023 W CN 2012000023W WO 2013075384 A1 WO2013075384 A1 WO 2013075384A1
Authority
WO
WIPO (PCT)
Prior art keywords
leads
packaging structure
die
metal substrate
bga packaging
Prior art date
Application number
PCT/CN2012/000023
Other languages
French (fr)
Inventor
Xinchao Wang
Zhizhong Liang
Original Assignee
Jiangsu Changjiang Electronics Technology Co. Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co. Ltd filed Critical Jiangsu Changjiang Electronics Technology Co. Ltd
Publication of WO2013075384A1 publication Critical patent/WO2013075384A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4821Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4828Etching
    • H01L21/4832Etching a temporary substrate after encapsulation process to form leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49579Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582Metallic layers on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49589Capacitor integral with or on the leadframe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92Specific sequence of method steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance

Definitions

  • the present invention generally relates to the field of semiconductor assembly or packaging and, more particularly, to ball grid array (BGA) packaging technologies.
  • BGA ball grid array
  • the molding pressure during the molding process may cause certain mold bleeding between the lead frame and the high-temperature resistant film, which may change a conductive metal lead into an insulated lead, as shown in Figure 50 (certain metal leads on the left side of the drawing are insulated by bleeding material).
  • the issues may include:
  • the composition of the lead frame is metal material and compound, when operated in a high and low temperature environment, the lead frame may be warping due to the different expansion and shrinkage stress of the different materials;
  • the warpage of the lead frame may impact the accuracy of die attaching process and may also affect the production yield due to the impact on the smooth transferring of the warping lead frames in the die attaching process;
  • the warpage of the lead frame may also impact the alignment accuracy of the wire bonding and may also affect the production yield due to the impact on the smooth transferring of the warping lead frames in the wire bonding process; and 5) Because the inner leads on the top surface of the lead frame are formed using etching technique, the width of the inner leads might have to be greater than lOOim and the distance between two adjacent inner leads also must have to be greater than lOOim. Thus, it may be difficult to achieve high density for the inner leads.
  • the BGA packaging structure includes a metal substrate, a first outer die pad formed based on the metal substrate, and a first die coupled to a top surface of the outer die pad.
  • the BGA packaging structure also includes a plurality of outer leads formed based on the metal substrate, and a metal layer containing a plurality of inner leads corresponding to the plurality of outer leads and extending to proximity of the die.
  • the metal layer is formed on the metal substrate by a multi-layer electrical plating process such that a lead pitch of the plurality of inner leads is significantly reduced.
  • the BGA packaging structure includes metal wires connecting die and the plurality of inner leads, and a plurality of solder balls attached to a back surface of the plurality of outer leads and the die pad.
  • the die, the plurality of inner leads, and metal wires are sealed with a molding compound.
  • Another aspect of the present disclosure includes a method for manufacturing a base ball grid array (BGA) packaging structure.
  • the method includes providing a metal substrate, forming a first photoresist film on a top surface of the metal substrate, and forming a plating pattern in the first photoresist film using photolithography.
  • the method also includes forming a metal layer containing a plurality of inner leads by a multi-layer electrical plating process using the plating pattern in the first photoresist film as a mask, such that a lead pitch of the plurality of inner leads is significantly reduced.
  • the method includes attaching a die in a predetermined region on the top surface of the metal substrate, connecting die and the plurality of inner leads using metal wires by a wire bonding process, and sealing the die, the plurality of inner leads, and metal wires with a molding compound.
  • the method also includes etching the metal substrate from a back surface of the metal substrate to form an outer die pad, corresponding to the predetermined area mounted with the die, and a plurality of outer leads corresponding to the plurality of inner leads.
  • the method includes attaching a plurality of solder balls to a back surface of the plurality of outer leads and the outer die pad.
  • Figures 1-16 illustrate an exemplary process for manufacturing an exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 17(A)- 17(B) illustrate an exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 18(A)- 18(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 19(A)- 19(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 20(A)-20(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 21 (A)-21 (B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 22(A)-22(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 23(A)-23(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 24(A)-24(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 25(A)-25(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 26(A)-26(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 27(A)-27(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 28(A)-28(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 29(A)-29(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 30(A)-30(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 31 (A)-31 (B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 32(A)-32(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 33(A)-33(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 34(A)-34(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 35(A)-35(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 36(A)-36(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 37(A)-37(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 38(A)-38(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 39(A)-39(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 40(A)-40(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 41 (A)-41 (B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 42(A)-42(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 43(A)-43(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 44(A)-44(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 45(A)-45(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 46(A)-46(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 47(A)-47(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figures 48(A)-48(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments
  • Figure 49 shows a high-temperature resistant film affixed on a lead frame
  • Figure 50 shows molding material infiltrated the high-temperature resistant film affixed on the lead frame; and [0046] Figure 51 shows a two-side etched lead frame.
  • Figure 17(A) and Figure 17(B) illustrate an exemplary BGA packaging structure with single die pad consistent with the disclosed embodiments.
  • Figure 17(A) is a cross-section view of Figure 17(B).
  • the BGA packaging structure includes outer die pad 1, outer lead(s) 2, inner lead(s) 4, die 5, metal wire(s) 6, and encapsulation material 7, such as EMC compound. Certain components may be omitted and other components may be added.
  • Outer die pad 1 may include any structure to be configured as a die pad to provide contact (e.g., thermal, electrical, etc.) to the die 5, and the outer die pad 1 may be in any appropriate shape, such as a rectangle.
  • Die 5 may include any pre-made semiconductor chip to be assembled or packaged.
  • outer leads 2 may include a plurality of metal pads or traces to provide external connections to the die 5 or any other components inside the BGA packaging structure through inner leads 4.
  • the plurality of leads of the outer leads 2 may be arranged in an array configuration or any other appropriate configuration. For example, in certain embodiments, as shown in Figure 17(B), the outer leads 2 are arranged in a single ring configuration.
  • the die 5 may be mounted on the top surface of the outer die pad 1 through conductive or non-conductive adhesive material 8, such as epoxy, soft solder, or other
  • an electrical plating (or simply plating) process such as multi-plating may be used to form inner leads 4. More specifically, multiple metal layers may be formed by plating such that the distance between adjacent inner leads (i.e., inner lead pitch) may be substantially reduced.
  • the top surface of the inner leads 4 and the top surface of die 5 may be connected by the metal wires 6. Further, the inner leads 4 may be formed significantly close to the die 5 via lead traces, such that the length of metal wires 6 connecting the die 5 to the inner leads 4 may also be substantially reduced.
  • All inner leads 4 may be referred as the first metal layer 14. That is, the first metal layer 14 includes all leads of inner leads 4.
  • the inner leads 4, the die 5, and the metal wires 6 are covered with encapsulation material 7, such as EMC compound.
  • sealant 10 are filled in the peripheral areas of the outer die pad 1 and outer leads 2, in the area between the outer die pad 1 and outer leads 2, and the area between adjacent outer leads 2.
  • the back surface of the outer die pad 1 and outer leads 2 are exposed from the sealant 10 and solder balls 9 are formed on the back surface of the outer die pad 1 and outer leads 2.
  • Sealant 10 may include any appropriate type of sealant, such as a no-filler compound or a small-filler compound.
  • Metal substrate 11 is provided for the lead frame manufacturing and packaging process.
  • Metal substrate 1 1 may have a desired thickness and be made from various metal materials depending on particular types of die 5.
  • metal substrate 1 1 may be made from one of copper, aluminum, iron, copper alloy, stainless steel or nickel-iron alloy. Other materials may also be used.
  • a layer of photoresist film 12 and a layer of photoresist film 13 may be formed on the top surface and the back surface of the metal substrate 1 1, respectively.
  • the photoresist film 12 and/or photoresist film 13 may be formed using various ways. For example, photoresist film 12 and/or photoresist film 13 may be coated on the surface or may be pasted on the surface.
  • the photoresist films 12 and 13 may be used to protect the metal substrate 11 in subsequent plating processes, and the photoresist films 12 or 13 may include a dry photoresist film or a wet photoresist film. Other types of photoresist films may also be used.
  • portions of the photoresist film 12 on the top surface of the metal substrate 1 1 may be removed to form a pattern by photolithography.
  • photolithography equipment may be used to perform exposure, development, and etching on the photoresist film 12 using a corresponding mask to form a plating pattern in the photoresist film 12.
  • the plating pattern may expose the predetermined areas of the metal substrate 11 for subsequent plating process to form the first metal layer 14, i.e., a first metal layer pattern.
  • a multi-layer plating process may be performed to form the first metal layer 14 in the areas of the metal substrate 11 exposed by the plating pattern in the photoresist film 12.
  • the multi-layer plating process is performed on the top surface of the metal substrate 1 1 using the pattern in the photoresist film 12 as a mask to form inner leads 4 (the first metal layer 14).
  • the inner leads 4 may also be formed corresponding to the outer leads 2 and may also be arranged in a corresponding shape (e.g., a rectangle) and configuration (e.g., a single ring configuration). Other shapes and configurations may also be used.
  • the lead pitch of the inner leads 4 and the distance between the inner leads 4 and the die 5 may be substantially reduced.
  • the inner leads 4 may be formed by a thin-line plating method on the top surface of the metal substrate 1 1.
  • the width of the inner leads 4 may be approximately 25um, and the lead pitch of the inner leads 4 may also be approximately 25 ⁇ . Comparing the lead pitch of about ⁇ in conventional lead frames, the width of the inner leads 4 and the lead pitch of the inner leads 4 may be significantly reduced, which may achieve high density for inner leads 4. Further, the inner leads 4 may extend to the proximity of the die 5 via lead traces.
  • the distance between the die and the inner leads 4 can also be significantly reduced such that the inner leads 4 can extend substantially close to the die 5, which can substantially reduce the package size.
  • the first metal layer 14 may include any appropriate number of layers of metal materials and/or metal layer structure.
  • the first metal layer 14 may include, from bottom to the top, a total of five layers of nickel, copper, nickel, palladium, and gold, respectively, or a total of three layers of nickel, copper, and silver. Other materials and number of layers and/or layer structures may also be used.
  • Different metal layers in the first metal layer 14 may provide different functionalities.
  • the bottom layer of nickel may be used as an erosion resistant and barrier layer
  • the middle layers of copper, nickel and palladium may be used to increase the thickness of the first metal layer 14
  • the top layer of gold may be used for wire bonding.
  • Other functionalities may also be provided and other metal layer structures may also be used.
  • the remaining top surface photoresist film 12 is removed and inner leads 4 are formed on the metal substrate 1 1.
  • the back surface photoresist film 13 is also removed.
  • the die 5 may be mounted on a
  • the predetermined die area of the metal substrate 1 1 may correspond to the outer die pad 1 to be formed in a subsequent process.
  • the top surface of die 5 and the top surface of the inner leads 4 are connected with metal wires 6 in a wire bonding process, as shown in Figure 7.
  • the inner leads 4, the die 5, and the metal wires 6 are then encapsulated using encapsulation material, as shown in Figure 8.
  • molding equipment may be used to seal or encapsulate the metal substrate 11 completed with die attaching and wire bonding by a molding compound. Post-molding curing may also be performed such that the molding compound or other encapsulation materials may also be cured before the next manufacturing process.
  • a layer of photoresist film 13 may be formed on the top surface of the metal substrate 11 and another layer of photoresist film 13 may be formed on the back surface of the metal substrate 11.
  • the photoresist films may be used to protect the metal substrate 11 in subsequent etching processes, and the photoresist films may include a dry photoresist film or a wet photoresist film. Other types of photoresist films may also be used.
  • portion of the photoresist film 13 on the back surface of the metal substrate 11 may be removed to form a pattern using photolithography.
  • photolithography equipment may be used to perform exposure, development, and etching on the photoresist film 13 on the back surface of the metal substrate 11 using a corresponding mask to form an etching pattern in the photoresist film 13.
  • the etching pattern may expose the predetermined areas on the back surface of the metal substrate 11 for subsequent etching process to form outer die pad 1 and outer leads 2, i.e., the die pad and outer lead pattern.
  • an etching process may be performed on the areas of the metal substrate 1 1 exposed by the etching pattern in the photoresist film 13.
  • the etching process is performed on the metal substrate 1 1 using the pattern in the photoresist film 13 as a mask.
  • the etching process may be full etching or half etching. Etched areas are thus formed at the back surface of the metal substrate 11, and the outer die pad 1 and the outer leads 2 are also formed after the etching process.
  • the remaining photoresist film 13 on the back surface of the metal substrate 11 is removed to expose the etched areas on the back surface of the metal substrate 11 including the areas outside the outer die pad 1 and the outer leads 2, between the outer die pad 1 and the outer leads 2, and between leads of the outer leads 2.
  • the photoresist film 13 on the top surface of the metal substrate 11 is also removed.
  • the etched areas on the back surface of the metal substrate 11 are filled with sealant 10 using filling equipment.
  • Post-molding curing may be performed on the sealant 10.
  • the sealant 10 may include any appropriate sealant, such a no- filler compound or a small-filler compound.
  • a micro-etching process may be performed on the back surface of the metal substrate 1 1, i.e., the back surface of the outer die pad 1 and outer leads 2 to form micro-etched surface.
  • solder balls 9 may be formed on the back surface of the outer die pad 1 and outer leads 2. More specifically, solder glue may be filled into the micro- etched back surface of the outer die pad 1 and outer leads 2, and a reflow soldering process may be performed to form solder balls 9 on the back surface of the outer die pad 1 and outer leads 2. Other methods may also be used to form solder balls 9.
  • a BGA packaging structure with single die pad and single lead ring may be formed.
  • the plurality of encapsulated components formed on the metal substrate 11 may be individually cut to obtain individual packaged ICs or individual BGA packaging structures in a package sawing process. Other cutting methods may also be used.
  • the BGA packaging structure may also include various different structures and configurations.
  • Figure 18(A) and Figure 18(B) illustrate another exemplary BGA packaging structure.
  • Figure 18(A) is a cross-section view of Figure 18(B).
  • the BGA packaging structure in Figure 18(A) and Figure 18(B) is similar to the BGA packaging structure in Figure 17(A) and Figure 17(B).
  • the BGA packaging structure in Figure 18(A) also includes an inner die pad 3 formed on the top surface of the outer die pad 1. That is, the inner die pad 3 may also be formed by the multi-layer plating process for forming the inner leads 4.
  • the inner die pad 3 may also be included in the first metal layer 14.
  • the die 5 is attached at the top surface of the inner die pad 3 via the conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with outer and inner die pads and single lead ring may be formed.
  • Figure 19(A) and Figure 19(B) illustrate another exemplary BGA packaging structure.
  • Figure 19(A) is a cross-section view of Figure 19(B).
  • the BGA packaging structure in Figure 19(A) and Figure 19(B) is similar to the BGA packaging structure in Figure 17(A) and Figure 17(B).
  • the BGA packaging structure in Figure 19(A) also includes one or more passive device 15 coupled between inner leads 4 using conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with single die pad and single lead ring coupled with passive device may be formed.
  • Figure 20(A) and Figure 20(B) illustrate another exemplary BGA packaging structure.
  • Figure 20(A) is a cross-section view of Figure 20(B).
  • the BGA packaging structure in Figure 20(A) and Figure 20(B) is similar to the BGA packaging structure in Figure 19(A) and Figure 19(B).
  • the BGA packaging structure in Figure 20(A) also includes inner die pad 3 formed on the top surface of the outer die pad 1. That is, the inner die pad 3 may also be formed by the multi-layer plating process for forming the inner leads 4.
  • the inner die pad 3 may also be included in the first metal layer 14.
  • the die 5 is attached at the top surface of the inner die pad 3 via the conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with outer and inner die pads and single lead ring coupled with passive device may be formed.
  • Figure 21(A) and Figure 21 (B) illustrate another exemplary BGA packaging structure.
  • Figure 21 (A) is a cross-section view of Figure 21 (B).
  • the BGA packaging structure in Figure 21(A) and Figure 21(B) is similar to the BGA packaging structure in Figure 17(A) and Figure 17(B).
  • the BGA packaging structure in Figure 21(A) and Figure 21(B) also includes an outer electrostatic discharge ring 16 arranged between the outer die pad 1 and outer leads 2.
  • an inner electrostatic discharge ring 17 may be formed on the top surface of the outer electrostatic discharge ring 16. That is, the inner electrostatic discharge ring 17 may also be formed by the multi-layer plating process for forming the first metal layer 14.
  • the inner electrostatic discharge ring 17 may also be arranged between the inner die pad 3 and inner leads 4.
  • top surface of the die 5 is connected to the top surface of the inner electrostatic discharge ring 17 by the metal wire 6 such that the die 5 may be protected from the static by the internal and outer electrostatic discharge rings 16 and 17.
  • a BGA packaging structure with single die pad, single lead ring, and electrostatic discharge ring may be formed.
  • Figure 22(A) and Figure 22(B) illustrate another exemplary BGA packaging structure.
  • Figure 22(A) is a cross-section view of Figure 22(B).
  • the BGA packaging structure in Figure 22(A) and Figure 22(B) is similar to the BGA packaging structure in Figure 21(A) and Figure 21(B).
  • the BGA packaging structure in Figure 22(A) also includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with outer and inner die pads, single lead ring, and electrostatic discharge ring may be formed.
  • Figure 23(A) and Figure 23(B) illustrate another exemplary BGA packaging structure.
  • Figure 23(A) is a cross-section view of Figure 23(B).
  • the BGA packaging structure in Figure 23(A) and Figure 23(B) is similar to the BGA packaging structure in Figure 21(A) and Figure 21(B).
  • the BGA packaging structure in Figure 23(A) also includes one or more passive device 15 coupled between inner leads 4 using conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with single die pad, single lead ring coupled with passive device, and electrostatic discharge ring may be formed.
  • Figure 24(A) and Figure 24(B) illustrate another exemplary BGA packaging structure.
  • Figure 24(A) is a cross-section view of Figure 24(B).
  • the BGA packaging structure in Figure 24(A) and Figure 24(B) is similar to the BGA packaging structure in Figure 23(A) and Figure 23(B).
  • the BGA packaging structure in Figure 24(A) also includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8.
  • Figure 25(A) and Figure 25(B) illustrate another exemplary BGA packaging structure.
  • Figure 25(A) is a cross-section view of Figure 25(B).
  • the BGA packaging structure in Figure 25(A) and Figure 25(B) is similar to the BGA packaging structure in Figure 17(A) and Figure 17(B).
  • the BGA packaging structure in Figure 25(A) and 25(B) includes multiple rings of outer leads 2.
  • outer leads 2 are arranged in a multiple-ring configuration.
  • multiple rings of inner leads 4 may be formed on the top surface of the outer leads 2. That is, multiple rings of inner leads 4 may also be formed by the multi-layer plating process for forming the first metal layer 14.
  • the lead pitch of inner leads from a same ring and the lead pitch of inner leads from different rings may be significantly reduced.
  • a BGA packaging structure with single die pad and multiple lead rings may be formed.
  • Figure 26(A) and Figure 26(B) illustrate another exemplary BGA packaging structure.
  • Figure 26(A) is a cross-section view of Figure 26(B).
  • the BGA packaging structure in Figure 26(A) and Figure 26(B) is similar to the BGA packaging structure in Figure 25(A) and Figure 25(B).
  • the BGA packaging structure in Figure 26(A) and 26(B) includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with outer and inner die pads and multiple lead rings may be formed.
  • Figure 27(A) and Figure 27(B) illustrate another exemplary BGA packaging structure.
  • Figure 27(A) is a cross-section view of Figure 27(B).
  • the BGA packaging structure in Figure 27(A) and Figure 27(B) is similar to the BGA packaging structure in Figure 25(A) and Figure 25(B).
  • the BGA packaging structure in Figure 27(A) and 27(B) includes one or more passive device 15 coupled between inner leads 4 using conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with single die pad and multiple lead rings coupled with passive device may be formed.
  • Figure 28(A) and Figure 28(B) illustrate another exemplary BGA packaging structure.
  • Figure 28(A) is a cross-section view of Figure 28(B).
  • the BGA packaging structure in Figure 28(A) and 28(B) includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with outer and inner die pads and multiple lead rings coupled with passive device may be formed.
  • Figure 29(A) and Figure 29(B) illustrate another exemplary BGA packaging structure.
  • Figure 29(A) is a cross-section view of Figure 29(B).
  • the BGA packaging structure in Figure 29(A) and Figure 29(B) is similar to the BGA packaging structure in Figure 25(A) and Figure 25(B).
  • the BGA packaging structure in Figure 29(A) and 29(B) includes an outer electrostatic discharge ring 16 arranged between the outer die pad 1 and outer leads 2.
  • an inner electrostatic discharge ring 17 may be formed on the top surface of the outer electrostatic discharge ring 16. That is, the inner electrostatic discharge ring 17 may also be formed by the multi-layer plating process for forming the first metal layer 14.
  • top surface of the die 5 is connected to the top surface of the inner electrostatic discharge ring 17 by the metal wire 6 such that the die 5 may be protected from the static by the internal and outer electrostatic discharge rings 16 and 17.
  • a BGA packaging structure with single die pad, multiple lead rings, and electrostatic discharge ring may be formed.
  • Figure 30(A) and Figure 30(B) illustrate another exemplary BGA packaging structure.
  • Figure 30(A) is a cross-section view of Figure 30(B).
  • the BGA packaging structure in Figure 30(A) and 30(B) includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with outer and inner die pads, multiple lead rings, and electrostatic discharge ring may be formed.
  • Figure 31 (A) and Figure 31 (B) illustrate another exemplary BGA packaging structure.
  • Figure 31 (A) is a cross-section view of Figure 31 (B).
  • the BGA packaging structure in Figure 31(A) and Figure 31(B) is similar to the BGA packaging structure in Figure 29(A) and Figure 29(B).
  • the BGA packaging structure in Figure 31(A) and 31(B) includes one or more passive device 15 coupled between inner leads 4 using conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with single die pad, multiple lead rings coupled with passive device, and electrostatic discharge ring may be formed.
  • Figure 32(A) and Figure 32(B) illustrate another exemplary BGA packaging structure.
  • Figure 32(A) is a cross-section view of Figure 32(B).
  • the BGA packaging structure in Figure 32(A) and Figure 32(B) is similar to the BGA packaging structure in Figure 31(A) and Figure 31(B).
  • the BGA packaging structure in Figure 32(A) and 32(B) includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8.
  • Figure 33(A) and Figure 33(B) illustrate another exemplary BGA packaging structure.
  • Figure 33(A) is a cross-section view of Figure 33(B).
  • the BGA packaging structure in Figure 33(A) and Figure 33(B) is similar to the BGA packaging structure in Figure 17(A) and Figure 17(B).
  • the BGA packaging structure in Figure 33(A) and 33(B) includes a plurality of outer die pads 1 and a plurality of dies 5.
  • Each of the plurality of dies 5 is attached on the top surface of a corresponding outer die pad 1 by conductive or non-conductive adhesive material 8.
  • a second outer die pad 1 is arranged in a side-by-side configuration with respect to the first or the original outer die pad 1, and a second die is attached on the top surface of the corresponding second outer die pad 1.
  • the top surface of each die 5 may be connected by metal wires 6.
  • a BGA packaging structure with multiple die pads and single lead ring may be formed.
  • Figure 34(A) and Figure 34(B) illustrate another exemplary BGA packaging structure.
  • Figure 34(A) is a cross-section view of Figure 34(B).
  • the BGA packaging structure in Figure 34(A) and Figure 34(B) is similar to the BGA packaging structure in Figure 33(A) and Figure 33(B).
  • the BGA packaging structure in Figure 34(A) and 34(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14.
  • Figure 35(A) and Figure 35(B) illustrate another exemplary BGA packaging structure.
  • Figure 35(A) is a cross-section view of Figure 35(B).
  • the BGA packaging structure in Figure 35(A) and Figure 35(B) is similar to the BGA packaging structure in Figure 19(A) and Figure 19(B).
  • the BGA packaging structure in Figure 35(A) and 35(B) includes a plurality of outer die pads 1 and a plurality of dies 5.
  • Each of the plurality of dies 5 is attached on the top surface of a corresponding outer die pad 1 by conductive or non-conductive adhesive material 8. Further, the top surface of each die 5 may be connected by metal wires 6. Other configurations may also be used.
  • a BGA packaging structure with multiple die pads and single lead ring coupled with passive device may be formed.
  • Figure 36(A) and Figure 36(B) illustrate another exemplary BGA packaging structure.
  • Figure 36(A) is a cross-section view of Figure 36(B).
  • the BGA packaging structure in Figure 36(A) and Figure 36(B) is similar to the BGA packaging structure in Figure 35(A) and Figure 35(B).
  • the BGA packaging structure in Figure 36(A) and 36(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with multiple outer and inner die pads and single lead ring coupled with passive device may be formed.
  • Figure 37(A) and Figure 37(B) illustrate another exemplary BGA packaging structure.
  • Figure 37(A) is a cross-section view of Figure 37(B).
  • the BGA packaging structure in Figure 37(A) and Figure 37(B) is similar to the BGA packaging structure in Figure 21(A) and Figure 21(B).
  • the BGA packaging structure in Figure 37(A) and 37(B) includes a plurality of outer die pads 1 and a plurality of dies 5.
  • Each of the plurality of dies 5 is attached on the top surface of a corresponding outer die pad 1 by conductive or non-conductive adhesive material 8. Further, the top surface of each die 5 may be connected by metal wires 6. Other configurations may also be used.
  • a BGA packaging structure with multiple die pads, single lead ring, and electrostatic discharge ring may be formed.
  • Figure 38(A) and Figure 38(B) illustrate another exemplary BGA packaging structure.
  • Figure 38(A) is a cross-section view of Figure 38(B).
  • the BGA packaging structure in Figure 38(A) and Figure 38(B) is similar to the BGA packaging structure in Figure 37(A) and Figure 37(B).
  • the BGA packaging structure in Figure 38(A) and 38(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8.
  • Figure 39(A) and Figure 39(B) illustrate another exemplary BGA packaging structure.
  • Figure 39(A) is a cross-section view of Figure 39(B).
  • the BGA packaging structure in Figure 39(A) and Figure 39(B) is similar to the BGA packaging structure in Figure 23(A) and Figure 23(B).
  • the BGA packaging structure in Figure 39(A) and 39(B) includes a plurality of outer die pads 1 and a plurality of dies 5.
  • Each of the plurality of dies 5 is attached on the top surface of a corresponding outer die pad 1 by conductive or non-conductive adhesive material 8. Further, the top surface of each die 5 may be connected by metal wires 6. Other configurations may also be used.
  • a BGA packaging structure with multiple die pads, single lead ring coupled with passive device, and electrostatic discharge ring may be formed.
  • Figure 40(A) and Figure 40(B) illustrate another exemplary BGA packaging structure.
  • Figure 40(A) is a cross-section view of Figure 40(B).
  • the BGA packaging structure in Figure 40(A) and Figure 40(B) is similar to the BGA packaging structure in Figure 39(A) and Figure 39(B).
  • the BGA packaging structure in Figure 40(A) and 40(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with multiple outer and inner die pads, single lead ring coupled with passive device, and electrostatic discharge ring may be formed.
  • Figure 41 (A) and Figure 41 (B) illustrate another exemplary BGA packaging structure.
  • Figure 41(A) is a cross-section view of Figure 41(B).
  • the BGA packaging structure in Figure 41(A) and Figure 41(B) is similar to the BGA packaging structure in Figure 33(A) and Figure 33(B).
  • the BGA packaging structure in Figure 41(A) and 41(B) includes multiple rings of outer leads 2.
  • outer leads 2 are arranged in a multiple-ring configuration.
  • multiple rings of inner leads 4 may be formed on the top surface of the outer leads 2. That is, multiple rings of inner leads 4 may also be formed by the multi-layer plating process for forming the first metal layer 14.
  • the lead pitch of inner leads from a same ring and the lead pitch of inner leads from different rings may be significantly reduced.
  • a BGA packaging structure with multiple die pads and multiple lead rings may be formed.
  • Figure 42(A) and Figure 42(B) illustrate another exemplary BGA packaging structure.
  • Figure 42(A) is a cross-section view of Figure 42(B).
  • the BGA packaging structure in Figure 42(A) and Figure 42(B) is similar to the BGA packaging structure in Figure 41(A) and Figure 41(B).
  • the BGA packaging structure in Figure 42(A) and 42(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with multiple outer and inner die pads and multiple lead rings may be formed.
  • Figure 43(A) and Figure 43(B) illustrate another exemplary BGA packaging structure.
  • Figure 43(A) is a cross-section view of Figure 43(B).
  • the BGA packaging structure in Figure 43(A) and Figure 43(B) is similar to the BGA packaging structure in Figure 35(A) and Figure 35(B).
  • the BGA packaging structure in Figure 43(A) and 43(B) includes multiple rings of outer leads 2.
  • outer leads 2 are arranged in a multiple-ring configuration.
  • multiple rings of inner leads 4 may be formed on the top surface of the outer leads 2. That is, multiple rings of inner leads 4 may also be formed by the multi-layer plating process for forming the first metal layer 14.
  • the lead pitch of inner leads from a same ring and the lead pitch of inner leads from different rings may be significantly reduced.
  • a BGA packaging structure with multiple die pads and multiple lead rings coupled with passive device may be formed.
  • Figure 44(A) and Figure 44(B) illustrate another exemplary BGA packaging structure.
  • Figure 44(A) is a cross-section view of Figure 44(B).
  • the BGA packaging structure in Figure 44(A) and Figure 44(B) is similar to the BGA packaging structure in Figure 43(A) and Figure 43(B).
  • the BGA packaging structure in Figure 44(A) and 44(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14.
  • the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with multiple outer and inner die pads and multiple lead rings coupled with passive device may be formed.
  • Figure 45(A) and Figure 45(B) illustrate another exemplary BGA packaging structure.
  • Figure 45(A) is a cross-section view of Figure 45(B).
  • the BGA packaging structure in Figure 45(A) and Figure 45(B) is similar to the BGA packaging structure in Figure 37(A) and Figure 37(B).
  • the BGA packaging structure in Figure 45(A) and 45(B) includes multiple rings of outer leads 2.
  • outer leads 2 are arranged in a multiple-ring configuration.
  • multiple rings of inner leads 4 may be formed on the top surface of the outer leads 2. That is, multiple rings of inner leads 4 may also be formed by the multi-layer plating process for forming the first metal layer 14.
  • the lead pitch of inner leads from a same ring and the lead pitch of inner leads from different rings may be significantly reduced.
  • a BGA packaging structure with multiple die pads, multiple lead rings, and electrostatic discharge ring may be formed.
  • Figure 46(A) and Figure 46(B) illustrate another exemplary BGA packaging structure.
  • Figure 46(A) is a cross-section view of Figure 46(B).
  • the BGA packaging structure in Figure 46(A) and Figure 46(B) is similar to the BGA packaging structure in Figure 45(A) and Figure 45(B).
  • the BGA packaging structure in Figure 46(A) and 46(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8.
  • Figure 47(A) and Figure 47(B) illustrate another exemplary BGA packaging structure.
  • Figure 47(A) is a cross-section view of Figure 47(B).
  • the BGA packaging structure in Figure 47(A) and Figure 47(B) is similar to the BGA packaging structure in Figure 39(A) and Figure 39(B).
  • the BGA packaging structure in Figure 47(A) and 47(B) includes multiple rings of outer leads 2.
  • outer leads 2 are arranged in a multiple-ring configuration.
  • multiple rings of inner leads 4 may be formed on the top surface of the outer leads 2. That is, multiple rings of inner leads 4 may also be formed by the multi-layer plating process for forming the first metal layer 14.
  • Figure 48(A) and Figure 48(B) illustrate another exemplary BGA packaging structure.
  • Figure 48(A) is a cross-section view of Figure 48(B).
  • the BGA packaging structure in Figure 48(A) and Figure 48(B) is similar to the BGA packaging structure in Figure 47(A) and Figure 47(B).
  • the BGA packaging structure in Figure 48(A) and 48(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8.
  • a BGA packaging structure with multiple outer and inner die pads, multiple lead rings coupled with passive device, and electrostatic discharge ring may be formed.
  • the disclosed methods, processes, and devices various advantageous applications may be implemented. For example, using the disclosed processes and devices, separate etching processes on both sides of the metal substrate can be avoided, and the process cost, time, personnel, power, and materials can be reduced. At the same time, the amount of potential environment-harmful substances generated in the etching processes can also be reduced. Further, because the use of the thin-line plating method on the top surface of the substrate, the minimum width of the inner leads may be approximately 25 ⁇ , and the lead pitch of the inner leads may be as small as approximately 25 ⁇ . Thus, the lead density in the lead frame can be significantly increased.
  • the lead frame may be tolerant
  • substantially high temperature such as in a range of approximately 380 - 420 Celsius degrees, without warping.
  • the distance between the back surface of the packaging body and the PCB board is increased.
  • the problem of unable to melt solder in the outer lead area or the die pad area by hot air is less likely to happen.
  • such structures may make rework much easier when the packaging structure is not well-mounted on the PCB board.

Abstract

A ball grid array (BGA) packaging structure is disclosed. The BGA packaging structure includes a metal substrate, a first outer die pad (1) formed based on the metal substrate, and a first die (5) coupled to a top surface of the outer die pad (1). The BGA packaging structure also includes a plurality of outer leads (2) formed based on the metal substrate, and a metal layer containing a plurality of inner leads (4) corresponding to the plurality of outer leads (2) and extending to proximity of the die (5). The metal layer is formed on the metal substrate by a multi-layer electrical plating process such that a lead pitch of the plurality of inner leads (4) is significantly reduced. Further, the BGA packaging structure includes metal wires (6) connecting die (5) and the plurality of outer leads (2) and a plurality of solder balls (9) attached to a back surface of the plurality of outer leads (2) and the die pad (1). The die (5), the plurality of inner leads (4), and metal wires (6) are sealed with a molding compound (10).

Description

BALL GRID ARRAY (BGA) PACKAGING STRUCTURES AND METHOD FOR
MANUFACTURING THE SAME
CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] This application claims the priority of Chinese patent application
no. 201110378797.5 . filed on semiconductor packaging technology the entire contents of which are incorporated herein by reference.
FIELD OF THE INVENTION
[0002] The present invention generally relates to the field of semiconductor assembly or packaging and, more particularly, to ball grid array (BGA) packaging technologies.
BACKGROUND
[0003] There are mainly two types of conventional lead frame structures used in semiconductor packaging processes. For the first type, as shown in Figure 49, after performing chemical etching and electrical plating (or simply plating) on the metal substrate, a layer of high- temperature resistant film is affixed on the back surface of the metal substrate to form the lead frame carrier to be used in the packaging process.
[0004] For the second type, as shown in Figure 51, chemical half etching is first performed on the back surface of the metal substrate, and the chemically half etched areas are sealed with encapsulation material. Further, chemical half etching for inner leads is performed on the top surface of the metal substrate and followed by plating on the surface of inner leads of the lead frame so as to complete the lead frame. [0005] However, both of these two types of lead frames may have certain disadvantages the packaging process. For example, for the first type, the issues may include:
1) Because an expensive high-temperature film must be affixed on the back surface of the metal substrate, the manufacturing cost is directly increased;
2) In the die attaching process of the packaging process, also because a high-temperature resistant film must be affixed on the back surface of the metal substrate, only epoxy may be used in the die attaching process, and certain techniques such as the eutectic process or soft solder technique cannot be used, which greatly limits choices of available products;
3) In the wire bonding process of the packaging process, also because a high-temperature resistant film must be affixed on the back surface of the metal substrate and the high- temperature resistant film is a kind of soft material, the wire bonding parameters may become unstable, which seriously impacts on the quality of wire bonding and the reliability and stability of the product; and
4) In the molding process, also because a high-temperature resistant film must be affixed on the back surface of the metal substrate, the molding pressure during the molding process may cause certain mold bleeding between the lead frame and the high-temperature resistant film, which may change a conductive metal lead into an insulated lead, as shown in Figure 50 (certain metal leads on the left side of the drawing are insulated by bleeding material).
[0006] For the second type conventional lead frame structure, the issues may include:
1) Because the etching process was carried out twice, manufacturing cost may be increased; 2) Because the composition of the lead frame is metal material and compound, when operated in a high and low temperature environment, the lead frame may be warping due to the different expansion and shrinkage stress of the different materials;
3) The warpage of the lead frame may impact the accuracy of die attaching process and may also affect the production yield due to the impact on the smooth transferring of the warping lead frames in the die attaching process;
4) The warpage of the lead frame may also impact the alignment accuracy of the wire bonding and may also affect the production yield due to the impact on the smooth transferring of the warping lead frames in the wire bonding process; and 5) Because the inner leads on the top surface of the lead frame are formed using etching technique, the width of the inner leads might have to be greater than lOOim and the distance between two adjacent inner leads also must have to be greater than lOOim. Thus, it may be difficult to achieve high density for the inner leads.
[0007] The disclosed methods and systems are directed to solve one or more problems set forth above and other problems.
BRIEF SUMMARY OF THE DISCLOSURE
[0008] One aspect of the present disclosure includes a ball grid array (BGA) packaging structure. The BGA packaging structure includes a metal substrate, a first outer die pad formed based on the metal substrate, and a first die coupled to a top surface of the outer die pad. The BGA packaging structure also includes a plurality of outer leads formed based on the metal substrate, and a metal layer containing a plurality of inner leads corresponding to the plurality of outer leads and extending to proximity of the die. The metal layer is formed on the metal substrate by a multi-layer electrical plating process such that a lead pitch of the plurality of inner leads is significantly reduced. Further, the BGA packaging structure includes metal wires connecting die and the plurality of inner leads, and a plurality of solder balls attached to a back surface of the plurality of outer leads and the die pad. The die, the plurality of inner leads, and metal wires are sealed with a molding compound.
[0009] Another aspect of the present disclosure includes a method for manufacturing a base ball grid array (BGA) packaging structure. The method includes providing a metal substrate, forming a first photoresist film on a top surface of the metal substrate, and forming a plating pattern in the first photoresist film using photolithography. The method also includes forming a metal layer containing a plurality of inner leads by a multi-layer electrical plating process using the plating pattern in the first photoresist film as a mask, such that a lead pitch of the plurality of inner leads is significantly reduced. Further, the method includes attaching a die in a predetermined region on the top surface of the metal substrate, connecting die and the plurality of inner leads using metal wires by a wire bonding process, and sealing the die, the plurality of inner leads, and metal wires with a molding compound. The method also includes etching the metal substrate from a back surface of the metal substrate to form an outer die pad, corresponding to the predetermined area mounted with the die, and a plurality of outer leads corresponding to the plurality of inner leads. In addition, the method includes attaching a plurality of solder balls to a back surface of the plurality of outer leads and the outer die pad. [0010] Other aspects of the present disclosure can be understood by those skilled in the art in light of the description, the claims, and the drawings of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS
[0011 ] Figures 1-16 illustrate an exemplary process for manufacturing an exemplary BGA packaging structure consistent with the disclosed embodiments;
[0012] Figures 17(A)- 17(B) illustrate an exemplary BGA packaging structure consistent with the disclosed embodiments;
[0013] Figures 18(A)- 18(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0014] Figures 19(A)- 19(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments; [0015] Figures 20(A)-20(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0016] Figures 21 (A)-21 (B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0017] Figures 22(A)-22(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0018] Figures 23(A)-23(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0019] Figures 24(A)-24(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments; [0020] Figures 25(A)-25(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments; [0021] Figures 26(A)-26(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0022] Figures 27(A)-27(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments; [0023] Figures 28(A)-28(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0024] Figures 29(A)-29(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0025] Figures 30(A)-30(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0026] Figures 31 (A)-31 (B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0027] Figures 32(A)-32(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments; [0028] Figures 33(A)-33(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0029] Figures 34(A)-34(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0030] Figures 35(A)-35(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments; [0031] Figures 36(A)-36(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0032] Figures 37(A)-37(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments; [0033] Figures 38(A)-38(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0034] Figures 39(A)-39(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0035] Figures 40(A)-40(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0036] Figures 41 (A)-41 (B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0037] Figures 42(A)-42(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments; [0038] Figures 43(A)-43(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0039] Figures 44(A)-44(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0040] Figures 45(A)-45(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments; [0041] Figures 46(A)-46(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0042] Figures 47(A)-47(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments; [0043] Figures 48(A)-48(B) illustrate another exemplary BGA packaging structure consistent with the disclosed embodiments;
[0044] Figure 49 shows a high-temperature resistant film affixed on a lead frame;
[0045] Figure 50 shows molding material infiltrated the high-temperature resistant film affixed on the lead frame; and [0046] Figure 51 shows a two-side etched lead frame.
DETAILED DESCRIPTION
[0047] Reference will now be made in detail to exemplary embodiments of the invention, which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. [0048] Figure 17(A) and Figure 17(B) illustrate an exemplary BGA packaging structure with single die pad consistent with the disclosed embodiments. Figure 17(A) is a cross-section view of Figure 17(B). As shown in Figure 17(A) and Figure 17(B), the BGA packaging structure includes outer die pad 1, outer lead(s) 2, inner lead(s) 4, die 5, metal wire(s) 6, and encapsulation material 7, such as EMC compound. Certain components may be omitted and other components may be added. [0049] Outer die pad 1 may include any structure to be configured as a die pad to provide contact (e.g., thermal, electrical, etc.) to the die 5, and the outer die pad 1 may be in any appropriate shape, such as a rectangle. Die 5 may include any pre-made semiconductor chip to be assembled or packaged. Further, outer leads 2 may include a plurality of metal pads or traces to provide external connections to the die 5 or any other components inside the BGA packaging structure through inner leads 4. The plurality of leads of the outer leads 2 may be arranged in an array configuration or any other appropriate configuration. For example, in certain embodiments, as shown in Figure 17(B), the outer leads 2 are arranged in a single ring configuration.
[0050] The die 5 may be mounted on the top surface of the outer die pad 1 through conductive or non-conductive adhesive material 8, such as epoxy, soft solder, or other
conductive or non-conductive material. Further, from the top surface of the outer leads 2, an electrical plating (or simply plating) process such as multi-plating may be used to form inner leads 4. More specifically, multiple metal layers may be formed by plating such that the distance between adjacent inner leads (i.e., inner lead pitch) may be substantially reduced. The top surface of the inner leads 4 and the top surface of die 5 may be connected by the metal wires 6. Further, the inner leads 4 may be formed significantly close to the die 5 via lead traces, such that the length of metal wires 6 connecting the die 5 to the inner leads 4 may also be substantially reduced.
[0051] All inner leads 4 may be referred as the first metal layer 14. That is, the first metal layer 14 includes all leads of inner leads 4. The inner leads 4, the die 5, and the metal wires 6 are covered with encapsulation material 7, such as EMC compound. Further, at the backside of the substrate, sealant 10 are filled in the peripheral areas of the outer die pad 1 and outer leads 2, in the area between the outer die pad 1 and outer leads 2, and the area between adjacent outer leads 2. The back surface of the outer die pad 1 and outer leads 2 are exposed from the sealant 10 and solder balls 9 are formed on the back surface of the outer die pad 1 and outer leads 2. Sealant 10 may include any appropriate type of sealant, such as a no-filler compound or a small-filler compound. [0052] The process for manufacturing the above described packaging structure may be explained below in detail with corresponding drawings. The process is used to make a plurality of components (packaged ICs). Because each component or packaged IC may be made in a same way, only a single packaged IC may be described for illustrative purposes.
[0053] As shown in Figure 1, at the beginning, a metal substrate 11 is provided for the lead frame manufacturing and packaging process. Metal substrate 1 1 may have a desired thickness and be made from various metal materials depending on particular types of die 5. For example, metal substrate 1 1 may be made from one of copper, aluminum, iron, copper alloy, stainless steel or nickel-iron alloy. Other materials may also be used.
[0054] Further, as shown in Figure 2, a layer of photoresist film 12 and a layer of photoresist film 13 may be formed on the top surface and the back surface of the metal substrate 1 1, respectively. The photoresist film 12 and/or photoresist film 13 may be formed using various ways. For example, photoresist film 12 and/or photoresist film 13 may be coated on the surface or may be pasted on the surface. The photoresist films 12 and 13 may be used to protect the metal substrate 11 in subsequent plating processes, and the photoresist films 12 or 13 may include a dry photoresist film or a wet photoresist film. Other types of photoresist films may also be used.
[0055] Further, as shown in Figure 3, portions of the photoresist film 12 on the top surface of the metal substrate 1 1 may be removed to form a pattern by photolithography. As shown in Figure 3, photolithography equipment may be used to perform exposure, development, and etching on the photoresist film 12 using a corresponding mask to form a plating pattern in the photoresist film 12. The plating pattern may expose the predetermined areas of the metal substrate 11 for subsequent plating process to form the first metal layer 14, i.e., a first metal layer pattern.
[0056] After forming the plating pattern or the first metal layer pattern, as shown in Figure 4, a multi-layer plating process may be performed to form the first metal layer 14 in the areas of the metal substrate 11 exposed by the plating pattern in the photoresist film 12. In other words, the multi-layer plating process is performed on the top surface of the metal substrate 1 1 using the pattern in the photoresist film 12 as a mask to form inner leads 4 (the first metal layer 14). The inner leads 4 may also be formed corresponding to the outer leads 2 and may also be arranged in a corresponding shape (e.g., a rectangle) and configuration (e.g., a single ring configuration). Other shapes and configurations may also be used.
[0057] Because the inner leads 4 are formed by the plating process, the lead pitch of the inner leads 4 and the distance between the inner leads 4 and the die 5 may be substantially reduced. For example, the inner leads 4 may be formed by a thin-line plating method on the top surface of the metal substrate 1 1. The width of the inner leads 4 may be approximately 25um, and the lead pitch of the inner leads 4 may also be approximately 25μπι. Comparing the lead pitch of about ΙΟΟμιη in conventional lead frames, the width of the inner leads 4 and the lead pitch of the inner leads 4 may be significantly reduced, which may achieve high density for inner leads 4. Further, the inner leads 4 may extend to the proximity of the die 5 via lead traces.
Using the plating process, the distance between the die and the inner leads 4 can also be significantly reduced such that the inner leads 4 can extend substantially close to the die 5, which can substantially reduce the package size.
[0058] The first metal layer 14 (e.g., the inner leads 4) may include any appropriate number of layers of metal materials and/or metal layer structure. For example, the first metal layer 14 may include, from bottom to the top, a total of five layers of nickel, copper, nickel, palladium, and gold, respectively, or a total of three layers of nickel, copper, and silver. Other materials and number of layers and/or layer structures may also be used.
[0059] Different metal layers in the first metal layer 14 may provide different functionalities. For example, in a five-layer structure (nickel, copper, nickel, palladium, and gold), the bottom layer of nickel may be used as an erosion resistant and barrier layer, the middle layers of copper, nickel and palladium may be used to increase the thickness of the first metal layer 14, and the top layer of gold may be used for wire bonding. Other functionalities may also be provided and other metal layer structures may also be used.
[0060] Further, as shown in Figure 5, the remaining top surface photoresist film 12 is removed and inner leads 4 are formed on the metal substrate 1 1. The back surface photoresist film 13 is also removed.
[0061] After removing the photoresist films, the die 5 may be mounted on a
predetermined die area of the metal substrate 11 using the conductive or non-conductive adhesive material 8, as shown in Figure 6, in a die attaching process. The predetermined die area of the metal substrate 1 1 may correspond to the outer die pad 1 to be formed in a subsequent process. The top surface of die 5 and the top surface of the inner leads 4 are connected with metal wires 6 in a wire bonding process, as shown in Figure 7. [0062] The inner leads 4, the die 5, and the metal wires 6 are then encapsulated using encapsulation material, as shown in Figure 8. For example, molding equipment may be used to seal or encapsulate the metal substrate 11 completed with die attaching and wire bonding by a molding compound. Post-molding curing may also be performed such that the molding compound or other encapsulation materials may also be cured before the next manufacturing process.
[0063] As shown in Figure 9, after the encapsulation process (e.g., molding and post- molding curing), a layer of photoresist film 13 may be formed on the top surface of the metal substrate 11 and another layer of photoresist film 13 may be formed on the back surface of the metal substrate 11. The photoresist films may be used to protect the metal substrate 11 in subsequent etching processes, and the photoresist films may include a dry photoresist film or a wet photoresist film. Other types of photoresist films may also be used.
[0064] Further, portion of the photoresist film 13 on the back surface of the metal substrate 11 may be removed to form a pattern using photolithography. As shown in Figure 10, photolithography equipment may be used to perform exposure, development, and etching on the photoresist film 13 on the back surface of the metal substrate 11 using a corresponding mask to form an etching pattern in the photoresist film 13. The etching pattern may expose the predetermined areas on the back surface of the metal substrate 11 for subsequent etching process to form outer die pad 1 and outer leads 2, i.e., the die pad and outer lead pattern. [0065] After forming the etching pattern, as shown in Figure 11, an etching process may be performed on the areas of the metal substrate 1 1 exposed by the etching pattern in the photoresist film 13. In other words, the etching process is performed on the metal substrate 1 1 using the pattern in the photoresist film 13 as a mask. The etching process may be full etching or half etching. Etched areas are thus formed at the back surface of the metal substrate 11, and the outer die pad 1 and the outer leads 2 are also formed after the etching process.
[0066] Further, as shown in Figure 12, after the etching process, the remaining photoresist film 13 on the back surface of the metal substrate 11 is removed to expose the etched areas on the back surface of the metal substrate 11 including the areas outside the outer die pad 1 and the outer leads 2, between the outer die pad 1 and the outer leads 2, and between leads of the outer leads 2. The photoresist film 13 on the top surface of the metal substrate 11 is also removed.
[0067] Afterwards, as shown in Figure 13, the etched areas on the back surface of the metal substrate 11 are filled with sealant 10 using filling equipment. Post-molding curing may be performed on the sealant 10. The sealant 10 may include any appropriate sealant, such a no- filler compound or a small-filler compound.
[0068] Further, additionally or optionally, as shown in Figure 14, a micro-etching process may be performed on the back surface of the metal substrate 1 1, i.e., the back surface of the outer die pad 1 and outer leads 2 to form micro-etched surface.
[0069] As shown in Figure 15, solder balls 9 may be formed on the back surface of the outer die pad 1 and outer leads 2. More specifically, solder glue may be filled into the micro- etched back surface of the outer die pad 1 and outer leads 2, and a reflow soldering process may be performed to form solder balls 9 on the back surface of the outer die pad 1 and outer leads 2. Other methods may also be used to form solder balls 9.
[0070] Thus, a BGA packaging structure with single die pad and single lead ring may be formed. Afterwards, as shown in Figure 16, the plurality of encapsulated components formed on the metal substrate 11 may be individually cut to obtain individual packaged ICs or individual BGA packaging structures in a package sawing process. Other cutting methods may also be used.
[0071] Further, the BGA packaging structure may also include various different structures and configurations. For example, Figure 18(A) and Figure 18(B) illustrate another exemplary BGA packaging structure. Figure 18(A) is a cross-section view of Figure 18(B).
[0072] As shown in Figure 18(A) and Figure 18(B), the BGA packaging structure in Figure 18(A) and Figure 18(B) is similar to the BGA packaging structure in Figure 17(A) and Figure 17(B). However, the BGA packaging structure in Figure 18(A) also includes an inner die pad 3 formed on the top surface of the outer die pad 1. That is, the inner die pad 3 may also be formed by the multi-layer plating process for forming the inner leads 4. The inner die pad 3 may also be included in the first metal layer 14. Further, the die 5 is attached at the top surface of the inner die pad 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with outer and inner die pads and single lead ring may be formed.
[0073] Figure 19(A) and Figure 19(B) illustrate another exemplary BGA packaging structure. Figure 19(A) is a cross-section view of Figure 19(B).
[0074] As shown in Figure 19(A) and Figure 19(B), the BGA packaging structure in Figure 19(A) and Figure 19(B) is similar to the BGA packaging structure in Figure 17(A) and Figure 17(B). However, the BGA packaging structure in Figure 19(A) also includes one or more passive device 15 coupled between inner leads 4 using conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with single die pad and single lead ring coupled with passive device may be formed. [0075] Figure 20(A) and Figure 20(B) illustrate another exemplary BGA packaging structure. Figure 20(A) is a cross-section view of Figure 20(B).
[0076] As shown in Figure 20 (A) and Figure 20 (B), the BGA packaging structure in Figure 20(A) and Figure 20(B) is similar to the BGA packaging structure in Figure 19(A) and Figure 19(B). However, the BGA packaging structure in Figure 20(A) also includes inner die pad 3 formed on the top surface of the outer die pad 1. That is, the inner die pad 3 may also be formed by the multi-layer plating process for forming the inner leads 4. The inner die pad 3 may also be included in the first metal layer 14. Further, the die 5 is attached at the top surface of the inner die pad 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with outer and inner die pads and single lead ring coupled with passive device may be formed.
[0077] Figure 21(A) and Figure 21 (B) illustrate another exemplary BGA packaging structure. Figure 21 (A) is a cross-section view of Figure 21 (B).
[0078] As shown in Figure 21 (A) and Figure 21 (B), the BGA packaging structure in Figure 21(A) and Figure 21(B) is similar to the BGA packaging structure in Figure 17(A) and Figure 17(B). However, the BGA packaging structure in Figure 21(A) and Figure 21(B) also includes an outer electrostatic discharge ring 16 arranged between the outer die pad 1 and outer leads 2. Further, an inner electrostatic discharge ring 17 may be formed on the top surface of the outer electrostatic discharge ring 16. That is, the inner electrostatic discharge ring 17 may also be formed by the multi-layer plating process for forming the first metal layer 14. The inner electrostatic discharge ring 17 may also be arranged between the inner die pad 3 and inner leads 4. Further, the top surface of the die 5 is connected to the top surface of the inner electrostatic discharge ring 17 by the metal wire 6 such that the die 5 may be protected from the static by the internal and outer electrostatic discharge rings 16 and 17. Thus, a BGA packaging structure with single die pad, single lead ring, and electrostatic discharge ring may be formed.
[0079] Figure 22(A) and Figure 22(B) illustrate another exemplary BGA packaging structure. Figure 22(A) is a cross-section view of Figure 22(B). [0080] As shown in Figure 22 (A) and Figure 22 (B), the BGA packaging structure in Figure 22(A) and Figure 22(B) is similar to the BGA packaging structure in Figure 21(A) and Figure 21(B). However, the BGA packaging structure in Figure 22(A) also includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with outer and inner die pads, single lead ring, and electrostatic discharge ring may be formed.
[0081] Figure 23(A) and Figure 23(B) illustrate another exemplary BGA packaging structure. Figure 23(A) is a cross-section view of Figure 23(B). [0082] As shown in Figure 23 (A) and Figure 23 (B), the BGA packaging structure in Figure 23(A) and Figure 23(B) is similar to the BGA packaging structure in Figure 21(A) and Figure 21(B). However, the BGA packaging structure in Figure 23(A) also includes one or more passive device 15 coupled between inner leads 4 using conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with single die pad, single lead ring coupled with passive device, and electrostatic discharge ring may be formed.
[0083] Figure 24(A) and Figure 24(B) illustrate another exemplary BGA packaging structure. Figure 24(A) is a cross-section view of Figure 24(B). [0084] As shown in Figure 24(A) and Figure 24(B), the BGA packaging structure in Figure 24(A) and Figure 24(B) is similar to the BGA packaging structure in Figure 23(A) and Figure 23(B). However, the BGA packaging structure in Figure 24(A) also includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with outer and inner die pads, single lead ring coupled with passive device, and electrostatic discharge ring may be formed. [0085] Figure 25(A) and Figure 25(B) illustrate another exemplary BGA packaging structure. Figure 25(A) is a cross-section view of Figure 25(B).
[0086] As shown in Figure 25(A) and Figure 25(B), the BGA packaging structure in Figure 25(A) and Figure 25(B) is similar to the BGA packaging structure in Figure 17(A) and Figure 17(B). However, the BGA packaging structure in Figure 25(A) and 25(B) includes multiple rings of outer leads 2. In other words, outer leads 2 are arranged in a multiple-ring configuration. Further, multiple rings of inner leads 4 may be formed on the top surface of the outer leads 2. That is, multiple rings of inner leads 4 may also be formed by the multi-layer plating process for forming the first metal layer 14. Because the multiple rings of inner leads 4 are formed by the multi-layer plating process, the lead pitch of inner leads from a same ring and the lead pitch of inner leads from different rings may be significantly reduced. Thus, a BGA packaging structure with single die pad and multiple lead rings may be formed.
[0087] Figure 26(A) and Figure 26(B) illustrate another exemplary BGA packaging structure. Figure 26(A) is a cross-section view of Figure 26(B). [0088] As shown in Figure 26(A) and Figure 26(B), the BGA packaging structure in Figure 26(A) and Figure 26(B) is similar to the BGA packaging structure in Figure 25(A) and Figure 25(B). However, the BGA packaging structure in Figure 26(A) and 26(B) includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with outer and inner die pads and multiple lead rings may be formed.
[0089] Figure 27(A) and Figure 27(B) illustrate another exemplary BGA packaging structure. Figure 27(A) is a cross-section view of Figure 27(B).
[0090] As shown in Figure 27(A) and Figure 27(B), the BGA packaging structure in Figure 27(A) and Figure 27(B) is similar to the BGA packaging structure in Figure 25(A) and Figure 25(B). However, the BGA packaging structure in Figure 27(A) and 27(B) includes one or more passive device 15 coupled between inner leads 4 using conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with single die pad and multiple lead rings coupled with passive device may be formed.
[0091] Figure 28(A) and Figure 28(B) illustrate another exemplary BGA packaging structure. Figure 28(A) is a cross-section view of Figure 28(B).
[0092] As shown in Figure 28(A) and Figure 28(B), the BGA packaging structure in Figure 28(A) and Figure 28(B) is similar to the BGA packaging structure in Figure 27(A) and
Figure 27(B). However, the BGA packaging structure in Figure 28(A) and 28(B) includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with outer and inner die pads and multiple lead rings coupled with passive device may be formed.
[0093] Figure 29(A) and Figure 29(B) illustrate another exemplary BGA packaging structure. Figure 29(A) is a cross-section view of Figure 29(B).
[0094] As shown in Figure 29(A) and Figure 29(B), the BGA packaging structure in Figure 29(A) and Figure 29(B) is similar to the BGA packaging structure in Figure 25(A) and Figure 25(B). However, the BGA packaging structure in Figure 29(A) and 29(B) includes an outer electrostatic discharge ring 16 arranged between the outer die pad 1 and outer leads 2. Further, an inner electrostatic discharge ring 17 may be formed on the top surface of the outer electrostatic discharge ring 16. That is, the inner electrostatic discharge ring 17 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the top surface of the die 5 is connected to the top surface of the inner electrostatic discharge ring 17 by the metal wire 6 such that the die 5 may be protected from the static by the internal and outer electrostatic discharge rings 16 and 17. Thus, a BGA packaging structure with single die pad, multiple lead rings, and electrostatic discharge ring may be formed.
[0095] Figure 30(A) and Figure 30(B) illustrate another exemplary BGA packaging structure. Figure 30(A) is a cross-section view of Figure 30(B).
[0096] As shown in Figure 30(A) and Figure 30(B), the BGA packaging structure in Figure 30(A) and Figure 30(B) is similar to the BGA packaging structure in Figure 29(A) and
Figure 29(B). However, the BGA packaging structure in Figure 30(A) and 30(B) includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with outer and inner die pads, multiple lead rings, and electrostatic discharge ring may be formed.
[0097] Figure 31 (A) and Figure 31 (B) illustrate another exemplary BGA packaging structure. Figure 31 (A) is a cross-section view of Figure 31 (B).
[0098] As shown in Figure 31 (A) and Figure 31 (B), the BGA packaging structure in Figure 31(A) and Figure 31(B) is similar to the BGA packaging structure in Figure 29(A) and Figure 29(B). However, the BGA packaging structure in Figure 31(A) and 31(B) includes one or more passive device 15 coupled between inner leads 4 using conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with single die pad, multiple lead rings coupled with passive device, and electrostatic discharge ring may be formed.
[0099] Figure 32(A) and Figure 32(B) illustrate another exemplary BGA packaging structure. Figure 32(A) is a cross-section view of Figure 32(B).
[00100] As shown in Figure 32(A) and Figure 32(B), the BGA packaging structure in Figure 32(A) and Figure 32(B) is similar to the BGA packaging structure in Figure 31(A) and Figure 31(B). However, the BGA packaging structure in Figure 32(A) and 32(B) includes one or more inner die pads 3 formed on the top surface of the outer die pad 1. That is, the one or more inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the die 5 is attached at the top surface of the one or more inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with outer and inner die pads, multiple lead rings coupled with passive device, and electrostatic discharge ring may be formed. [00101] Figure 33(A) and Figure 33(B) illustrate another exemplary BGA packaging structure. Figure 33(A) is a cross-section view of Figure 33(B).
[00102] As shown in Figure 33(A) and Figure 33(B), the BGA packaging structure in Figure 33(A) and Figure 33(B) is similar to the BGA packaging structure in Figure 17(A) and Figure 17(B). However, the BGA packaging structure in Figure 33(A) and 33(B) includes a plurality of outer die pads 1 and a plurality of dies 5. Each of the plurality of dies 5 is attached on the top surface of a corresponding outer die pad 1 by conductive or non-conductive adhesive material 8. For example, a second outer die pad 1 is arranged in a side-by-side configuration with respect to the first or the original outer die pad 1, and a second die is attached on the top surface of the corresponding second outer die pad 1. Further, the top surface of each die 5 may be connected by metal wires 6. Thus, a BGA packaging structure with multiple die pads and single lead ring may be formed.
[00103] Figure 34(A) and Figure 34(B) illustrate another exemplary BGA packaging structure. Figure 34(A) is a cross-section view of Figure 34(B). [00104] As shown in Figure 34(A) and Figure 34(B), the BGA packaging structure in Figure 34(A) and Figure 34(B) is similar to the BGA packaging structure in Figure 33(A) and Figure 33(B). However, the BGA packaging structure in Figure 34(A) and 34(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with multiple outer and inner die pads and single lead ring may be formed. [00105] Figure 35(A) and Figure 35(B) illustrate another exemplary BGA packaging structure. Figure 35(A) is a cross-section view of Figure 35(B).
[00106] As shown in Figure 35(A) and Figure 35(B), the BGA packaging structure in Figure 35(A) and Figure 35(B) is similar to the BGA packaging structure in Figure 19(A) and Figure 19(B). However, the BGA packaging structure in Figure 35(A) and 35(B) includes a plurality of outer die pads 1 and a plurality of dies 5. Each of the plurality of dies 5 is attached on the top surface of a corresponding outer die pad 1 by conductive or non-conductive adhesive material 8. Further, the top surface of each die 5 may be connected by metal wires 6. Other configurations may also be used. Thus, a BGA packaging structure with multiple die pads and single lead ring coupled with passive device may be formed.
[00107] Figure 36(A) and Figure 36(B) illustrate another exemplary BGA packaging structure. Figure 36(A) is a cross-section view of Figure 36(B).
[00108] As shown in Figure 36(A) and Figure 36(B), the BGA packaging structure in Figure 36(A) and Figure 36(B) is similar to the BGA packaging structure in Figure 35(A) and Figure 35(B). However, the BGA packaging structure in Figure 36(A) and 36(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with multiple outer and inner die pads and single lead ring coupled with passive device may be formed.
[00109] Figure 37(A) and Figure 37(B) illustrate another exemplary BGA packaging structure. Figure 37(A) is a cross-section view of Figure 37(B). [00110] As shown in Figure 37(A) and Figure 37(B), the BGA packaging structure in Figure 37(A) and Figure 37(B) is similar to the BGA packaging structure in Figure 21(A) and Figure 21(B). However, the BGA packaging structure in Figure 37(A) and 37(B) includes a plurality of outer die pads 1 and a plurality of dies 5. Each of the plurality of dies 5 is attached on the top surface of a corresponding outer die pad 1 by conductive or non-conductive adhesive material 8. Further, the top surface of each die 5 may be connected by metal wires 6. Other configurations may also be used. Thus, a BGA packaging structure with multiple die pads, single lead ring, and electrostatic discharge ring may be formed.
[0011 1] Figure 38(A) and Figure 38(B) illustrate another exemplary BGA packaging structure. Figure 38(A) is a cross-section view of Figure 38(B).
[00112] As shown in Figure 38(A) and Figure 38(B), the BGA packaging structure in Figure 38(A) and Figure 38(B) is similar to the BGA packaging structure in Figure 37(A) and Figure 37(B). However, the BGA packaging structure in Figure 38(A) and 38(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with multiple outer and inner die pads, single lead ring, and electrostatic discharge ring may be formed. [00113] Figure 39(A) and Figure 39(B) illustrate another exemplary BGA packaging structure. Figure 39(A) is a cross-section view of Figure 39(B).
[00114] As shown in Figure 39(A) and Figure 39(B), the BGA packaging structure in Figure 39(A) and Figure 39(B) is similar to the BGA packaging structure in Figure 23(A) and Figure 23(B). However, the BGA packaging structure in Figure 39(A) and 39(B) includes a plurality of outer die pads 1 and a plurality of dies 5. Each of the plurality of dies 5 is attached on the top surface of a corresponding outer die pad 1 by conductive or non-conductive adhesive material 8. Further, the top surface of each die 5 may be connected by metal wires 6. Other configurations may also be used. Thus, a BGA packaging structure with multiple die pads, single lead ring coupled with passive device, and electrostatic discharge ring may be formed.
[00115] Figure 40(A) and Figure 40(B) illustrate another exemplary BGA packaging structure. Figure 40(A) is a cross-section view of Figure 40(B).
[00116] As shown in Figure 40(A) and Figure 40(B), the BGA packaging structure in Figure 40(A) and Figure 40(B) is similar to the BGA packaging structure in Figure 39(A) and Figure 39(B). However, the BGA packaging structure in Figure 40(A) and 40(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with multiple outer and inner die pads, single lead ring coupled with passive device, and electrostatic discharge ring may be formed.
[00117] Figure 41 (A) and Figure 41 (B) illustrate another exemplary BGA packaging structure. Figure 41(A) is a cross-section view of Figure 41(B). [00118] As shown in Figure 41 (A) and Figure 41 (B), the BGA packaging structure in Figure 41(A) and Figure 41(B) is similar to the BGA packaging structure in Figure 33(A) and Figure 33(B). However, the BGA packaging structure in Figure 41(A) and 41(B) includes multiple rings of outer leads 2. In other words, outer leads 2 are arranged in a multiple-ring configuration. Further, multiple rings of inner leads 4 may be formed on the top surface of the outer leads 2. That is, multiple rings of inner leads 4 may also be formed by the multi-layer plating process for forming the first metal layer 14. Because the multiple rings of inner leads 4 are formed by the multi-layer plating process, the lead pitch of inner leads from a same ring and the lead pitch of inner leads from different rings may be significantly reduced. Thus, a BGA packaging structure with multiple die pads and multiple lead rings may be formed.
[00119] Figure 42(A) and Figure 42(B) illustrate another exemplary BGA packaging structure. Figure 42(A) is a cross-section view of Figure 42(B).
[00120] As shown in Figure 42(A) and Figure 42(B), the BGA packaging structure in Figure 42(A) and Figure 42(B) is similar to the BGA packaging structure in Figure 41(A) and Figure 41(B). However, the BGA packaging structure in Figure 42(A) and 42(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with multiple outer and inner die pads and multiple lead rings may be formed.
[00121] Figure 43(A) and Figure 43(B) illustrate another exemplary BGA packaging structure. Figure 43(A) is a cross-section view of Figure 43(B). [00122] As shown in Figure 43(A) and Figure 43(B), the BGA packaging structure in Figure 43(A) and Figure 43(B) is similar to the BGA packaging structure in Figure 35(A) and Figure 35(B). However, the BGA packaging structure in Figure 43(A) and 43(B) includes multiple rings of outer leads 2. In other words, outer leads 2 are arranged in a multiple-ring configuration. Further, multiple rings of inner leads 4 may be formed on the top surface of the outer leads 2. That is, multiple rings of inner leads 4 may also be formed by the multi-layer plating process for forming the first metal layer 14. Because the multiple rings of inner leads 4 are formed by the multi-layer plating process, the lead pitch of inner leads from a same ring and the lead pitch of inner leads from different rings may be significantly reduced. Thus, a BGA packaging structure with multiple die pads and multiple lead rings coupled with passive device may be formed.
[00123] Figure 44(A) and Figure 44(B) illustrate another exemplary BGA packaging structure. Figure 44(A) is a cross-section view of Figure 44(B). [00124] As shown in Figure 44(A) and Figure 44(B), the BGA packaging structure in Figure 44(A) and Figure 44(B) is similar to the BGA packaging structure in Figure 43(A) and Figure 43(B). However, the BGA packaging structure in Figure 44(A) and 44(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with multiple outer and inner die pads and multiple lead rings coupled with passive device may be formed.
[00125] Figure 45(A) and Figure 45(B) illustrate another exemplary BGA packaging structure. Figure 45(A) is a cross-section view of Figure 45(B).
[00126] As shown in Figure 45(A) and Figure 45(B), the BGA packaging structure in Figure 45(A) and Figure 45(B) is similar to the BGA packaging structure in Figure 37(A) and Figure 37(B). However, the BGA packaging structure in Figure 45(A) and 45(B) includes multiple rings of outer leads 2. In other words, outer leads 2 are arranged in a multiple-ring configuration. Further, multiple rings of inner leads 4 may be formed on the top surface of the outer leads 2. That is, multiple rings of inner leads 4 may also be formed by the multi-layer plating process for forming the first metal layer 14. Because the multiple rings of inner leads 4 are formed by the multi-layer plating process, the lead pitch of inner leads from a same ring and the lead pitch of inner leads from different rings may be significantly reduced. Thus, a BGA packaging structure with multiple die pads, multiple lead rings, and electrostatic discharge ring may be formed.
[00127] Figure 46(A) and Figure 46(B) illustrate another exemplary BGA packaging structure. Figure 46(A) is a cross-section view of Figure 46(B).
[00128] As shown in Figure 46(A) and Figure 46(B), the BGA packaging structure in Figure 46(A) and Figure 46(B) is similar to the BGA packaging structure in Figure 45(A) and Figure 45(B). However, the BGA packaging structure in Figure 46(A) and 46(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with multiple outer and inner die pads, multiple lead rings, and electrostatic discharge ring may be formed. [00129] Figure 47(A) and Figure 47(B) illustrate another exemplary BGA packaging structure. Figure 47(A) is a cross-section view of Figure 47(B).
[00130] As shown in Figure 47(A) and Figure 47(B), the BGA packaging structure in Figure 47(A) and Figure 47(B) is similar to the BGA packaging structure in Figure 39(A) and Figure 39(B). However, the BGA packaging structure in Figure 47(A) and 47(B) includes multiple rings of outer leads 2. In other words, outer leads 2 are arranged in a multiple-ring configuration. Further, multiple rings of inner leads 4 may be formed on the top surface of the outer leads 2. That is, multiple rings of inner leads 4 may also be formed by the multi-layer plating process for forming the first metal layer 14. Because the multiple rings of inner leads 4 are formed by the multi-layer plating process, the lead pitch of inner leads from a same ring and the lead pitch of inner leads from different rings may be significantly reduced. Thus, a BGA packaging structure with multiple die pads, multiple lead rings coupled with passive device, and electrostatic discharge ring may be formed. [00131] Figure 48(A) and Figure 48(B) illustrate another exemplary BGA packaging structure. Figure 48(A) is a cross-section view of Figure 48(B).
[00132] As shown in Figure 48(A) and Figure 48(B), the BGA packaging structure in Figure 48(A) and Figure 48(B) is similar to the BGA packaging structure in Figure 47(A) and Figure 47(B). However, the BGA packaging structure in Figure 48(A) and 48(B) includes a plurality of inner die pads 3 formed on the top surface of the plurality of outer die pads 1. That is, the plurality of inner die pads 3 may also be formed by the multi-layer plating process for forming the first metal layer 14. Further, the plurality of dies 5 are attached at the top surface of the corresponding plurality of inner die pads 3 via the conductive or non-conductive adhesive material 8. Thus, a BGA packaging structure with multiple outer and inner die pads, multiple lead rings coupled with passive device, and electrostatic discharge ring may be formed.
[00133] By using the disclosed methods, processes, and devices, various advantageous applications may be implemented. For example, using the disclosed processes and devices, separate etching processes on both sides of the metal substrate can be avoided, and the process cost, time, personnel, power, and materials can be reduced. At the same time, the amount of potential environment-harmful substances generated in the etching processes can also be reduced. Further, because the use of the thin-line plating method on the top surface of the substrate, the minimum width of the inner leads may be approximately 25μηι, and the lead pitch of the inner leads may be as small as approximately 25μηι. Thus, the lead density in the lead frame can be significantly increased.
[00134] By using the disclosed processes and devices, only lead frame is involved in the die attaching process and wire bonding process. Thus, the lead frame may be tolerant
substantially high temperature, such as in a range of approximately 380 - 420 Celsius degrees, without warping. Further, when the BGA packaging structure is surface-mounted on a PCB board, because of the outer leads and die pad are implanted or coated with solder balls, the distance between the back surface of the packaging body and the PCB board is increased. Thus, the problem of unable to melt solder in the outer lead area or the die pad area by hot air is less likely to happen. In addition, such structures may make rework much easier when the packaging structure is not well-mounted on the PCB board.
[00135] It is understood that the disclosed embodiments may be applied to packaging any semiconductor devices. Various alternations, modifications, or equivalents to the technical solutions of the disclosed embodiments can be obvious to those skilled in the art.

Claims

What is claimed is:
1. A ball grid array (BGA) packaging structure, comprising: a metal substrate;
a first outer die pad formed based on the metal substrate; a first die coupled to a top surface of the outer die pad; a plurality of outer leads formed based on the metal substrate; a metal layer, containing a plurality of inner leads corresponding to the plurality of outer leads and extending to proximity of the die, formed on the metal substrate by a multi-layer electrical plating process such that a lead pitch of the plurality of inner leads is significantly reduced; metal wires connecting die and the plurality of inner leads; and a plurality of solder balls attached to a back surface of the plurality of outer leads and the die pad,
wherein the die, the plurality of inner leads, and metal wires are sealed with a molding compound.
2. The BGA packaging structure according to claim 1, wherein: the die is coupled to the top surface of the outer die pad by an adhesive material.
3. The BGA packaging structure according to claim 1, wherein: a width of the inner leads is approximately 25im; and the lead pitch is approximately 25im.
4. The BGA packaging structure according to claim 1, further including: one or more inner die pads formed on the top surface of the outer die pad by the multilayer electrical plating process, wherein the die is attached to a top surface of the inner die pad by an adhesive material.
5. The BGA packaging structure according to claim 1, wherein: the plurality of outer leads are arranged in a single-ring configuration; and the plurality of inner leads are also arranged in a corresponding single-ring
configuration.
6. The BGA packaging structure according to claim 1, wherein: the plurality outer leads are arranged in a multi-ring configuration; and
the plurality of inner leads are also arranged in a corresponding multi-ring configuration.
7. The BGA packaging structure according to claim 1, further including: one or more passive devices coupled between leads of the plurality of inner leads by an adhesive material.
8. The BGA packaging structure according to claim 1, further including: an outer electrostatic discharge ring formed based on the metal substrate between the outer die pad and the outer leads; and an inner electrostatic discharge ring formed at a top surface of the outer electrostatic discharge ring and connected to the die.
9. The BGA packaging structure according to claim 1, further including: sealant filled in peripheral areas of the outer die pad and the outer leads, areas between the outer die pad and the outer leads, and areas between leads of the outer leads at a back surface of the metal substrate.
10. The BGA packaging structure according to claim 1, further including: a second outer die pad formed in a side-by-side configuration with respect to the first outer die pad; and
a second die coupled to a top surface of the second outer die pad, wherein the first die and the second die are connected with a metal wire.
1 1. A method for manufacturing a ball grid array (BGA) packaging structure, comprising: providing a metal substrate; forming a first photoresist film on a top surface of the metal substrate; forming a plating pattern in the first photoresist film using photolithography; forming a metal layer containing a plurality of inner leads by a multi-layer electrical plating process using the plating pattern in the first photoresist film as a mask, such that a lead pitch of the plurality of inner leads is significantly reduced; attaching a die in a predetermined region on the top surface of the metal substrate; connecting the die and the plurality of inner leads using metal wires by a wire bonding process;
sealing the die, the plurality of inner leads, and metal wires with a molding compound; etching the metal substrate from a back surface of the metal substrate to form an outer die pad, corresponding to the predetermined area mounted with the die, and a plurality of outer leads corresponding to the plurality of inner leads; and attaching a plurality of solder balls to a back surface of the plurality of outer leads and the outer die pad.
12. The method according to claim 11, wherein forming the first photoresist film further includes: forming a second photoresist film on the back surface of the metal substrate to protect the metal substrate during the multi-layer electrical plating process.
13. The method according to claim 1 1, wherein forming the metal layer further includes: removing the first photoresist film and the second photoresist film.
14. The method according to claim 11, wherein etching the metal substrate further includes: forming a third photoresist film on the back surface of the metal substrate; forming an etching pattern in the third photoresist film using photolithography; and etching the metal substrate using the etching pattern in the third photoresist film on the back surface of the metal substrate.
15. The method according to claim 14, wherein forming the third photoresist further
includes: forming a fourth photoresist film on top of the metal substrate including the
encapsulation material to protect the metal substrate from the etching process.
16. The method according to claim 15, wherein etching the metal substrate further includes: removing the third photoresist film and the fourth photoresist film after the metal substrate is etched.
17. The method according to claim 1 1, further including: filling sealant in peripheral areas outside the outer die pad and the outer leads, areas between the outer die pad and the outer leads, and areas between leads of the outer leads at the back surface of the metal substrate.
18. The method according to claim 1 1, wherein attaching the plurality of solder balls further includes: micro-etching the back surface of the outer die pad and the outer leads; and attaching the plurality of solder ball on the micro-etched back surface of the outer die pad and the outer leads.
19. The method according to claim 11, wherein attaching the die further includes: attaching the die in the predetermined region on the top surface of the metal substrate using an adhesive material and corresponding to the outer die pad.
20. The method according to claim 11 , further including: forming one or more inner die pads on the top surface of the outer die pad by the multilayer electrical plating process, wherein the die is attached to the one or more inner die pads by an adhesive material.
21. The method according to claim 1 1, wherein: the plurality of outer leads are arranged in a single-ring configuration; and the plurality of inner leads are also arranged in a corresponding single-ring
configuration.
22. The method according to claim 11, wherein: the plurality outer leads are arranged in a multi-ring configuration; and the plurality of inner leads are also arranged in a corresponding multi-ring configuration.
23. The method according to claim 11, further including: one or more passive devices coupled between the plurality of inner leads by an adhesive material.
24. The method according to claim 10, further including: forming an outer electrostatic discharge ring based on the metal substrate between the outer die pad and the plurality of outer leads; forming an inner electrostatic discharge ring at a top surface of the outer electrostatic discharge ring; and
connecting the inner electrostatic discharge ring and the die.
PCT/CN2012/000023 2011-11-25 2012-01-06 Ball grid array (bga) packaging structures and method for manufacruring the same WO2013075384A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110378797.5 2011-11-25
CN2011103787975A CN102403283B (en) 2011-11-25 2011-11-25 Ball grid array packaging structure with basic islands and manufacturing method thereof

Publications (1)

Publication Number Publication Date
WO2013075384A1 true WO2013075384A1 (en) 2013-05-30

Family

ID=45885347

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2012/000023 WO2013075384A1 (en) 2011-11-25 2012-01-06 Ball grid array (bga) packaging structures and method for manufacruring the same

Country Status (2)

Country Link
CN (1) CN102403283B (en)
WO (1) WO2013075384A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102856267B (en) * 2012-05-09 2015-06-03 江苏长电科技股份有限公司 First packaged and then etched packaging structure with multiple chips reversedly installed and base islands buried and preparation method of structure
CN102856293B (en) * 2012-05-09 2014-10-29 江苏长电科技股份有限公司 First etched and then packaged packaging structure with single chip normally installed and without base islands as well as preparation method thereof
CN102867790B (en) * 2012-05-09 2015-04-29 江苏长电科技股份有限公司 Multi-chip positively-arranged etched-encapsulated base island-exposed encapsulating structure and manufacturing method thereof
CN102881670B (en) * 2012-05-09 2015-03-04 江苏长电科技股份有限公司 Multi-chip positive packaging structure for embedding basic island by first packaging and second etching, and manufacturing method for multi-chip positive packaging structure
CN102867791B (en) * 2012-05-09 2015-06-03 江苏长电科技股份有限公司 Multi-chip reversely-arranged etched-encapsulated base island-buried encapsulating structure and manufacturing method thereof
CN102856283B (en) * 2012-05-09 2015-04-29 江苏长电科技股份有限公司 First packaged and then etched packaging structure with single chip normally installed and base islands buried and preparation method of structure
CN102856269B (en) * 2012-05-09 2014-10-29 江苏长电科技股份有限公司 Single-chip flip, etching-after-packaging and pad exposed packaging structure and manufacturing method thereof
CN102856284B (en) * 2012-05-09 2014-10-29 江苏长电科技股份有限公司 Multi-chip flip, etching-after-packaging and pad exposed packaging structure and manufacturing method thereof
CN102856285B (en) * 2012-05-09 2014-10-29 江苏长电科技股份有限公司 Single-chip flip, etching-after-packaging and pad embedded packaging structure and manufacturing method thereof
CN102856292B (en) * 2012-05-09 2014-10-29 江苏长电科技股份有限公司 Single-chip flip, packaging-after-etching and non-pad packaging structure and manufacturing method thereof
CN102856288B (en) * 2012-05-09 2015-02-11 江苏长电科技股份有限公司 First etched and then packaged packaging structure with multiple chips normally installed and base islands buried as well as preparation method thereof
CN102856270B (en) * 2012-05-09 2015-04-29 江苏长电科技股份有限公司 Single-chip flip, etching-after-packaging and non-pad packaging structure and manufacturing method thereof
CN102867789B (en) * 2012-05-09 2015-03-04 江苏长电科技股份有限公司 Single-chip positively-arranged first-encapsulated second-etched base island-exposed encapsulating structure and manufacturing method thereof
CN112045329B (en) * 2020-09-07 2022-03-11 中国电子科技集团公司第二十四研究所 Flip-chip bonding process method for ball mounting on metal substrate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211274A (en) * 1991-06-07 1993-08-20 Shinko Electric Ind Co Ltd Lead frame and semiconductor device
JPH0964225A (en) * 1995-08-25 1997-03-07 Mitsui High Tec Inc Semiconductor device
KR970077560A (en) * 1996-05-23 1997-12-12 김광호 A ball grid array package using a metal plate on which an embossing metal ball is formed
CN1190258A (en) * 1997-02-05 1998-08-12 华通电脑股份有限公司 Bead array type integrated circuit package method and package part
JPH11186294A (en) * 1997-10-14 1999-07-09 Sumitomo Metal Smi Electron Devices Inc Semiconductor package and manufacture thereof
CN1619798A (en) * 2003-11-20 2005-05-25 台湾积体电路制造股份有限公司 Heat spreader ball grid array package its forming method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1174404A (en) * 1997-08-28 1999-03-16 Nec Corp Ball-grid-array semiconductor device
JP3450279B2 (en) * 2000-07-27 2003-09-22 Necエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
CN1738035A (en) * 2005-07-02 2006-02-22 江苏长电科技股份有限公司 Integrated circuit or discrete component flat array bump package structure
US8779569B2 (en) * 2010-01-18 2014-07-15 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
CN101814482B (en) * 2010-04-30 2012-04-25 江苏长电科技股份有限公司 Base island lead frame structure and production method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211274A (en) * 1991-06-07 1993-08-20 Shinko Electric Ind Co Ltd Lead frame and semiconductor device
JPH0964225A (en) * 1995-08-25 1997-03-07 Mitsui High Tec Inc Semiconductor device
KR970077560A (en) * 1996-05-23 1997-12-12 김광호 A ball grid array package using a metal plate on which an embossing metal ball is formed
CN1190258A (en) * 1997-02-05 1998-08-12 华通电脑股份有限公司 Bead array type integrated circuit package method and package part
JPH11186294A (en) * 1997-10-14 1999-07-09 Sumitomo Metal Smi Electron Devices Inc Semiconductor package and manufacture thereof
CN1619798A (en) * 2003-11-20 2005-05-25 台湾积体电路制造股份有限公司 Heat spreader ball grid array package its forming method

Also Published As

Publication number Publication date
CN102403283B (en) 2013-08-07
CN102403283A (en) 2012-04-04

Similar Documents

Publication Publication Date Title
US9252113B2 (en) No-exposed-pad ball grid array (BGA) packaging structures and method for manufacturing the same
WO2013075384A1 (en) Ball grid array (bga) packaging structures and method for manufacruring the same
JP3575001B2 (en) Semiconductor package and manufacturing method thereof
JP5043743B2 (en) Manufacturing method of semiconductor device
WO2013078752A1 (en) No-exposed-pad quad flat no-lead (qfn) packaging structures and method for manufacturing the same
US7638879B2 (en) Semiconductor package and fabrication method thereof
JP3416737B2 (en) Semiconductor package manufacturing method
TWI397964B (en) Partially patterned lead frames and methods of making and using the same in semiconductor packaging
US20070059865A1 (en) Semiconductor package with a support structure and fabrication method thereof
US8330267B2 (en) Semiconductor package
WO2013037186A1 (en) Islandless pre-encapsulated plating-then-etching lead frame structures and manufacturing method
KR101085185B1 (en) Circuit board structure, packaging structure and method for making the same
WO2013037184A1 (en) Islandless pre-encapsulated etching-then-plating lead frame structures and manufacturing method
US20100219521A1 (en) Window type semiconductor package
KR100292033B1 (en) Semiconductor chip package and method for manufacturing same
US8361841B2 (en) Mold array process method to encapsulate substrate cut edges
US20090134504A1 (en) Semiconductor package and packaging method for balancing top and bottom mold flows from window
US9209115B2 (en) Quad flat no-lead (QFN) packaging structure and method for manufacturing the same
JP2010062316A (en) Semiconductor device and method for manufacturing the semiconductor device
WO2013097580A1 (en) Chip on chip package and manufacturing method
US20150041182A1 (en) Package substrate and chip package using the same
WO2013078750A1 (en) First-plating-then-etching quad flat no-lead (qfn) packaging structures and method for manufacturing the same
WO2013078753A1 (en) Barrel-plating quad flat no-lead(qfn) package structure and method for manufacturing the same
JP2011061055A (en) Method of manufacturing semiconductor device
JP3503502B2 (en) Resin-sealed semiconductor device and method of manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12851598

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12851598

Country of ref document: EP

Kind code of ref document: A1