CN101814482B - Base island lead frame structure and production method thereof - Google Patents
Base island lead frame structure and production method thereof Download PDFInfo
- Publication number
- CN101814482B CN101814482B CN2010101658960A CN201010165896A CN101814482B CN 101814482 B CN101814482 B CN 101814482B CN 2010101658960 A CN2010101658960 A CN 2010101658960A CN 201010165896 A CN201010165896 A CN 201010165896A CN 101814482 B CN101814482 B CN 101814482B
- Authority
- CN
- China
- Prior art keywords
- pin
- metal substrate
- back side
- dao
- photoresist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 120
- 239000002184 metal Substances 0.000 claims abstract description 120
- 239000005022 packaging material Substances 0.000 claims abstract description 22
- 239000000945 filler Substances 0.000 claims abstract description 16
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 76
- 229920002120 photoresistant polymer Polymers 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- -1 Step 4 Substances 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000004134 energy conservation Methods 0.000 abstract 1
- 239000002699 waste material Substances 0.000 abstract 1
- 239000012528 membrane Substances 0.000 description 13
- 238000005538 encapsulation Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention relates to a base island lead frame structure and a production method thereof. The structure comprises a base island (1) and pins (2), wherein a first metal layer (4) is arranged on the front sides of the base island (1) and the pins (2); a second metal layer (5) is arranged on the rear sides of the base island (1) and the pins (2); the front sides of the pins (2) extend to the side of the base island (1) as much as possible; non-filler plastic packaging materials (3) are embedded in the peripheral regions of the pins (2), the region between the base island (1) and the pins (2) and the region between the pin (2) and the pin (2); and the non-filler plastic packaging materials (3) can connect the lower peripheral parts of the pins, the lower parts of the pins (2) and the lower part of the base island (1), as well as the lower part of the pin (2) and the lower part of the pin (2) into a whole and make the size of the back sides of the base island (1) and the pins (2) less than that of the front sides of the base island (1) and the pins (2) so as to form a structure, with a bigger upper part and a smaller lower part, of the base island and the pins. The base island lead frame structure and the production method thereof have the advantages of large restraint capacity of the plastic packaging body and the pins, reduction in cost, energy conservation and carbon reduction and reduction in waste.
Description
(1) technical field
The present invention relates to a kind of lead frame structure and production method thereof.Belong to the semiconductor packaging field.
(2) background technology
Traditional lead frame structure mainly contains two kinds:
First kind:
After chemical etching and surface electrical coating are carried out in the front of employing metal substrate, stick the resistant to elevated temperatures glued membrane of one deck at the back side of metal substrate and form the leadframe carrier (shown in figure 14) that to carry out encapsulation process.
Second kind:
After chemical etching and surface electrical coating are carried out in the front of employing metal substrate, promptly accomplish the making (shown in figure 15) of lead frame.Back etched is then carried out at the back side of lead frame again in encapsulation process.
And the not enough point of two kinds of above-mentioned lead frames below in encapsulation process, having existed:
First kind:
1) but this kind lead frame must stick the glued membrane of one deck costliness high temperature resistance because of the back side.So directly increased high cost.
2) but also because the glued membrane of one deck high temperature resistance must be sticked in the back side of this kind lead frame; So the load technology in encapsulation process can only be used conduction or nonconducting resin technology; And the technology that can not adopt eutectic technology and slicken solder is fully carried out load, so selectable product category just has bigger limitation.
3) but again because the glued membrane of one deck high temperature resistance must be sticked in the back side of this kind lead frame; And in the ball bonding bonding technology in encapsulation process; Because but the glued membrane of this high temperature resistance is a soft materials; So caused the instability of ball bonding bonding parameter, seriously influenced the quality of ball bonding and the stability of production reliability.
4) but again because the glued membrane of one deck high temperature resistance must be sticked in the back side of this kind lead frame; And the plastic package process process in encapsulation process; Because the high pressure of plastic packaging relation is easy to cause between lead frame and the glued membrane and infiltrates plastic packaging material, be that the kenel of conduction has become insulation pin (shown in figure 16) on the contrary because of having infiltrated plastic packaging material and will formerly should belong to metal leg (pin).
Second kind:
This kind lead frame structure has carried out etching partially technology in the metal substrate front; Though can solve the problem of first kind of lead frame, because only carried out the work that etches partially in the metal substrate front, and plastic packaging material only envelopes the height of half pin in the plastic packaging process; So the constraint ability of plastic-sealed body and metal leg has just diminished; When if the plastic-sealed body paster is not fine to pcb board, does over again again and heavily paste, with regard to the problem (shown in figure 17) that is easy to generate pin.
Especially the kind of plastic packaging material is to adopt when filler is arranged; Because material is at the environment and the follow-up surface-pasted stress changing relation of production process; Can cause metal and plastic packaging material to produce the crack of vertical-type, its characteristic is the high more then crisp more firmly more crack that is easy to generate more of proportion of filler.
In addition, because the distance between chip and the pin is far away, shown in Figure 18～19, the length of metal wire is longer, metal wire cost higher (the especially metal wire of expensive proof gold matter); Same because the length of metal wire is longer, make that the signal output speed of chip is slow (being the product of storage class and the calculating that needs mass data by it, more outstanding); Too because the length of metal wire is longer, so existing dead resistance/parasitic capacitance of metal wire and parasitic electric pole are also higher to the interference of signal; Because the distance between chip and the pin is far away, make that the volume and the area of encapsulation are bigger again, material cost is higher, and discarded object is more.
(3) summary of the invention
The objective of the invention is to overcome above-mentioned deficiency, provide a kind of and reduce that packaging cost, selectable product category are wide, the constraint ability of good stability, plastic-sealed body and the metal leg of the quality of ball bonding and production reliability is big that base island lead frame structure and production method thereof are arranged.
(3) summary of the invention
The objective of the invention is to realize like this: a kind of have a base island lead frame structure; Comprise Ji Dao and pin; Front at said Ji Dao and pin is provided with the first metal layer; Be provided with second metal level at the back side of said Ji Dao and pin; Said pin front extends to next door, basic island as much as possible, and zone between peripheral zone, pin and the basic island of said pin and the zone between pin and the pin are equipped with packless plastic packaging material, and said packless plastic packaging material links into an integrated entity periphery, pin bottom, pin bottom and Ji Dao bottom and pin bottom and pin bottom; And make said Ji Dao and pin back side size less than Ji Dao and the positive size of pin, form up big and down small Ji Dao and pin configuration.
The present invention has the production method of base island lead frame structure, and said method comprises following processing step:
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of metal substrate,
The metal substrate front that utilizes exposure imaging equipment that step 2 is accomplished the pad pasting operation is carried out exposure imaging and is removed the part photoresist film, exposing the zone that follow-up needs etch partially on the metal substrate,
The positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially,, forms the back side of Ji Dao and pin simultaneously relatively in the positive half-etched regions that forms depression of metal substrate,
The film operation is taken off at step 5, the positive back side of metal substrate
The positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed.
In the positive half-etched regions that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material.
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of the metal substrate of accomplishing the packless soft gap filler operation of full-filling,
The part photoresist film is removed at the front and the back side at metal substrate, and purpose is the back side and the front of exposing Ji Dao and pin.
The Ji Dao that exposes in step 8 and the back side of pin plate second metal level, plate the first metal layer in the front of Ji Dao and pin
Remove metal substrate back portion photoresist film, with zone between zone, pin and the basic island of exposing pin periphery, the metal substrate back side and the zone between pin and the pin,
At the back side of metal substrate to being not the front that the metal etch of step 4 remaining part goes out described Ji Dao and pin by the photoresist film region covered; Simultaneously the pin front is extended to next door, basic island as much as possible; And make said Ji Dao and pin back side size less than Ji Dao and the positive size of pin, form up big and down small Ji Dao and pin configuration.
The film operation is taken off at step 12, the positive back side of metal substrate
The photoresist film that the metal substrate front and back is remaining removes.
The invention has the beneficial effects as follows:
1) but the glued membrane of one deck costliness high temperature resistance need not sticked in the back side of this kind lead frame.So directly reduced high cost.
2) but because the glued membrane of one deck high temperature resistance need not sticked in the back side of this kind lead frame yet; So the load technology in encapsulation process is except using conduction or nonconducting resin technology; Can also adopt the technology of eutectic technology and slicken solder to carry out load, so selectable product category is just wide.
3) but again because the glued membrane of one deck high temperature resistance need not sticked in the back side of this kind lead frame, guaranteed the stability of ball bonding bonding parameter, guaranteed the quality of ball bonding and the stability of production reliability.
4) but again because this kind lead frame need not stick the glued membrane of one deck high temperature resistance, and the plastic package process process in encapsulation process can not cause between lead frame and the glued membrane fully and infiltrate plastic packaging material.
5) because the zone between said pin (pin) and pin is equipped with packless soft gap filler; This packless soft gap filler has the filler plastic packaging material to envelope the height of whole pin with the routine in the plastic packaging process; So the constraint ability of plastic-sealed body and pin just becomes big, do not have the problem that produces pin again.
6) owing to adopted positive method of separating the etching operation with the back side; So in the etching operation, can form slightly little and the structure that positive pin size is big slightly of the size of back side pin, and slided by the tighter more difficult generation that packless plastic packaging material coated and falling pin with the size that varies in size up and down of a pin.
7) separate etched technology owing to used the back side with the front; So can the pin in lead frame front be extended to as much as possible the next door of Ji Dao; Impel chip and pin distance significantly to shorten; Shown in Figure 20～21, so the cost of metal wire also can significantly reduce (the especially metal wire of expensive proof gold matter).
8) also because the shortening of metal wire makes also significantly speedup (the especially product of storage class and the calculating that needs mass data of signal output speed of chip; More outstanding); Because the length of metal wire has shortened, so existing dead resistance/parasitic capacitance of metal wire and parasitic electric pole are to the also significantly reduction of interference of signal.
9) because of having used the elongation technology of pin,, make the volume and the area of encapsulation significantly to dwindle so can be easy to produce the distance between high pin number and highdensity pin and the pin.
10) because volume after being encapsulated is significantly dwindled, more directly embody material cost significantly descend with because the minimizing of material usage also significantly reduces the puzzlement of discarded object environmental protection.
(4) description of drawings
Fig. 1～12 do not have each operation sketch map of production method that Ji Dao encloses the pin base island lead frame more for the present invention.
Figure 13 has the base island lead frame structure sketch map for the present invention.
Figure 14 was for sticked the resistant to elevated temperatures glued membrane figure of one deck operation in the past at the back side of metal substrate.
Figure 15 was for to adopt the front of metal substrate to carry out chemical etching and surface electrical coating flow diagram in the past.
Figure 16 was for formed insulation pin sketch map in the past.
Figure 17 pin figure for what formed in the past.
Figure 18 is an encapsulating structure sketch map in the past.
Figure 19 is 18 vertical view.
Figure 20 is for adopting the encapsulating structure sketch map of lead frame of the present invention.
Figure 21 is 20 vertical view.
Reference numeral among the figure:
(5) embodiment
The present invention does not have Ji Dao, and to enclose pin base island lead frame production method following more:
Referring to Fig. 1, get the suitable metal substrate of a slice thickness 6.The material of metal substrate 6 can be carried out conversion according to the function and the characteristic of chip, for example: copper, aluminium, iron, copper alloy or dilval etc.
Referring to Fig. 2, utilize film sticking equipment to stick the photoresist film 7 and 8 that can carry out exposure imaging respectively, to protect follow-up etch process operation at the front and the back side of metal substrate.
Referring to Fig. 3, exposure imaging removal part photoresist film is carried out in the metal substrate front that utilizes exposure imaging equipment that step 2 is accomplished the pad pasting operation, to expose the zone that follow-up needs etch partially on the metal substrate.
Referring to Fig. 4; The positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially; In the positive half-etched regions 9 that forms depression of metal substrate, form the back side of basic island 1 and pin 2 simultaneously relatively, its purpose mainly is to avoid in subsequent job, occurring the glue that overflows.
The film operation is taken off at step 5, the positive back side of metal substrate
Referring to Fig. 5, the positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed.
Referring to Fig. 6, in the positive half-etched regions 9 that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material 3.
Referring to Fig. 7, utilize film sticking equipment to stick the photoresist film 10 and 11 that can carry out exposure imaging respectively, to protect follow-up metal cladding process operation at the front and the back side of the metal substrate of accomplishing the packless soft gap filler operation of full-filling.
Referring to Fig. 8, remove the part photoresist film at the front and the back side of metal substrate, purpose is the back side and the front of exposing Ji Dao and pin.
Referring to Fig. 9; The Ji Dao that exposes in step 8 and the back side of pin plate second metal level 5; Plate the first metal layer 4 in the front of Ji Dao and pin; Can be tightr, firm between metal wire and chip region and the routing Nei Jiao district during in order to follow-up bonding wire engage is increased in the conjugation that impels in the encapsulating process between Packed plastic packaging material simultaneously.And the one-tenth branch of metal level can be to adopt golden nickel gold, golden ambrose alloy nickel gold, NiPdAu, golden NiPdAu, nickel gold, silver or tin etc. because of different chip materials.
Referring to Figure 10, remove metal substrate back portion photoresist film, with zone between zone, pin and the basic island of exposing pin periphery, the metal substrate back side and the zone between pin and the pin,
Referring to Figure 11; At the back side of metal substrate to being not the front that the metal etch of step 4 remaining part goes out described Ji Dao and pin by the photoresist film region covered; Simultaneously the pin front is extended to next door, basic island as much as possible; And make said Ji Dao and pin back side size less than Ji Dao and the positive size of pin, form up big and down small Ji Dao and pin configuration.
The film operation is taken off at step 12, the positive back side of metal substrate
Referring to Figure 12, the photoresist film that the metal substrate front and back is remaining removes.
End product is referring to Figure 13: among Figure 13; Base island 1, pin 2, packless plastic packaging material 3, the first metal layer 4 and second metal level 5; Can find out by Figure 13; The present invention has base island lead frame structure, comprises basic island 1 and pin 2, and said pin 2 fronts extend to 1 next door, basic island as much as possible; Front at said basic island 1 and pin 2 is provided with the first metal layer 4; The back side at said basic island 1 and pin 2 is provided with second metal level 5, and zone between peripheral zone, pin 2 and the basic island 1 of said pin 2 and the zone between pin 2 and the pin 2 are equipped with packless plastic packaging material 3, and said packless plastic packaging material 3 links into an integrated entity periphery, pin bottom, pin 2 bottoms and 1 bottom, basic island and pin 2 bottoms and pin 2 bottoms; And make said Ji Dao and pin back side size less than Ji Dao and the positive size of pin, form up big and down small Ji Dao and pin configuration.
The present invention can electroplate the making that the first metal layer 4 or regional area are electroplated the first metal layer 4 because of the Zone Full that need carry out in the front of above-mentioned pin 2 of chip functions.
Claims (2)
1. one kind has base island lead frame structure; Comprise Ji Dao (1) and pin (2); Front at said Ji Dao (1) and pin (2) is provided with the first metal layer (4); The back side at said Ji Dao (1) and pin (2) is provided with second metal level (5); It is characterized in that: said pin (2) front extends to Ji Dao (1) next door; Zone between peripheral zone, pin (2) and the Ji Dao (1) of said pin (2) and the zone between pin (2) and the adjacent leads (2) are equipped with packless plastic packaging material (3), and said packless plastic packaging material (3) links into an integrated entity periphery, pin bottom, pin (2) bottom and Ji Dao (1) bottom and pin (2) bottom and adjacent leads (2) bottom, and makes said Ji Dao (1) and pin (2) back side size less than Ji Dao (1) and the positive size of pin (2); Form up big and down small Ji Dao and pin configuration, the material of said pin (2) adopts copper, aluminium, iron, copper alloy or dilval.
2. production method that base island lead frame structure is arranged as claimed in claim 1 is characterized in that said method comprises following processing step:
Step 1, get metal substrate
Step 2, pad pasting operation
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of metal substrate,
Step 3, the positive part photoresist film of removing of metal substrate
The metal substrate front that utilizes exposure imaging equipment that step 2 is accomplished the pad pasting operation is carried out exposure imaging and is removed the part photoresist film, exposing the zone that follow-up needs etch partially on the metal substrate,
Step 4, metal substrate front etch partially
The positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially,, forms the back side of Ji Dao and pin simultaneously relatively in the positive half-etched regions that forms depression of metal substrate,
The film operation is taken off at step 5, the positive back side of metal substrate
The positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed,
Step 6, the packless soft gap filler of the positive half-etched regions full-filling of metal substrate
In the positive half-etched regions that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material,
Step 7, the pad pasting operation of the positive back side of metal substrate
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of the metal substrate of accomplishing the packless soft gap filler operation of full-filling,
Step 8, removal part photoresist film
The part photoresist film is removed at the front and the back side at metal substrate, and purpose is the back side and the front of exposing Ji Dao and pin,
Step 9, metal cladding
The Ji Dao that exposes in step 8 and the back side of pin plate second metal level, plate the first metal layer in the front of Ji Dao and pin,
Step 10, removal metal substrate back portion photoresist film
Remove metal substrate back portion photoresist film, with zone between zone, pin and the basic island of exposing pin periphery, the metal substrate back side and the zone between pin and the adjacent leads,
Step 11, the metal substrate back side etch partially
At the back side of metal substrate to being not the front that the metal etch of step 4 remaining part goes out described Ji Dao and pin by the photoresist film region covered; Simultaneously the pin front is extended to next door, basic island as much as possible; And make said Ji Dao and pin back side size less than Ji Dao and the positive size of pin; Form up big and down small Ji Dao and pin configuration
The film operation is taken off at step 12, the positive back side of metal substrate
The photoresist film that the metal substrate front and back is remaining removes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101658960A CN101814482B (en) | 2010-04-30 | 2010-04-30 | Base island lead frame structure and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101658960A CN101814482B (en) | 2010-04-30 | 2010-04-30 | Base island lead frame structure and production method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101814482A CN101814482A (en) | 2010-08-25 |
| CN101814482B true CN101814482B (en) | 2012-04-25 |
Family
ID=42621679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101658960A Active CN101814482B (en) | 2010-04-30 | 2010-04-30 | Base island lead frame structure and production method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101814482B (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101969032B (en) * | 2010-09-04 | 2012-04-11 | 江苏长电科技股份有限公司 | Double-sided graphic chip right-handed electroplating-etching module packaging method |
| US8309400B2 (en) * | 2010-10-15 | 2012-11-13 | Advanced Semiconductor Engineering, Inc. | Leadframe package structure and manufacturing method thereof |
| US8735224B2 (en) | 2011-02-14 | 2014-05-27 | Stats Chippac Ltd. | Integrated circuit packaging system with routed circuit lead array and method of manufacture thereof |
| CN102324414B (en) * | 2011-09-13 | 2013-06-26 | 江苏长电科技股份有限公司 | Sequentially etched and plated lead frame structure with island prepacked plastic sealed material and producing method thereof |
| CN102324413B (en) * | 2011-09-13 | 2013-03-06 | 江苏长电科技股份有限公司 | Sequentially etched and plated lead frame structure with island prepacked plastic sealed material and producing method thereof |
| US9275877B2 (en) | 2011-09-20 | 2016-03-01 | Stats Chippac, Ltd. | Semiconductor device and method of forming semiconductor package using panel form carrier |
| CN102403282B (en) * | 2011-11-22 | 2013-08-28 | 江苏长电科技股份有限公司 | Packaging structure with basic islands and without pins at four sides and manufacturing method thereof |
| CN102403283B (en) * | 2011-11-25 | 2013-08-07 | 江苏长电科技股份有限公司 | Ball grid array packaging structure with basic islands and manufacturing method thereof |
| CN102683315B (en) * | 2011-11-30 | 2015-04-29 | 江苏长电科技股份有限公司 | Barrel-plating four-side pinless packaging structure and manufacturing method thereof |
| CN102522394A (en) * | 2011-12-30 | 2012-06-27 | 北京工业大学 | On-chip chip package and production method thereof |
| CN103681581B (en) * | 2013-12-05 | 2016-04-27 | 江苏长电科技股份有限公司 | Once after first erosion, plating frame subtraction buries the flat leg structure of flip-chip and process |
| CN103681580B (en) * | 2013-12-05 | 2016-07-06 | 江苏长电科技股份有限公司 | Etching-prior-to-plametal metal frame subtraction imbedded chip flipchip bump structure and process |
| CN103646938B (en) * | 2013-12-05 | 2016-02-24 | 江苏长电科技股份有限公司 | Once first plate and lose metal frame subtraction afterwards and bury flip-chip bump structure and process |
| CN103681583B (en) * | 2013-12-05 | 2016-04-27 | 江苏长电科技股份有限公司 | Once after first erosion, plating frame subtraction buries the flat leg structure of chip formal dress and process |
| CN103646937B (en) * | 2013-12-05 | 2016-02-24 | 江苏长电科技股份有限公司 | Secondary etching-prior-to-plametal metal frame subtraction buries flip-chip bump structure and process |
| CN103646930B (en) * | 2013-12-05 | 2016-02-24 | 江苏长电科技股份有限公司 | Secondary etching-prior-to-plametal metal frame subtraction buries the flat leg structure of flip-chip and process |
| CN107492536B (en) * | 2017-08-09 | 2019-08-23 | 林英洪 | Lead frame and its manufacture craft |
| CN113097076A (en) * | 2020-01-09 | 2021-07-09 | 珠海格力电器股份有限公司 | QFN frame structure, QFN packaging structure and manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201038153Y (en) * | 2007-04-29 | 2008-03-19 | 江苏长电科技股份有限公司 | Package method for preventing element lamination in semiconductor plastic package |
| CN201048130Y (en) * | 2007-04-29 | 2008-04-16 | 江苏长电科技股份有限公司 | Packing method capable of preventing component delamination in semiconductor plastic package |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100781149B1 (en) * | 2001-12-21 | 2007-11-30 | 삼성테크윈 주식회사 | Lead-frame strip and process for manufacturing semiconductor packages using the same |
| JP2006108306A (en) * | 2004-10-04 | 2006-04-20 | Yamaha Corp | Lead frame and semiconductor package employing it |
| CN101308830A (en) * | 2007-05-18 | 2008-11-19 | 飞思卡尔半导体（中国）有限公司 | Lead frame for semiconductor encapsulation |
| CN201681893U (en) * | 2010-04-30 | 2010-12-22 | 江苏长电科技股份有限公司 | Lead frame structure with base islands |
-
2010
- 2010-04-30 CN CN2010101658960A patent/CN101814482B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201038153Y (en) * | 2007-04-29 | 2008-03-19 | 江苏长电科技股份有限公司 | Package method for preventing element lamination in semiconductor plastic package |
| CN201048130Y (en) * | 2007-04-29 | 2008-04-16 | 江苏长电科技股份有限公司 | Packing method capable of preventing component delamination in semiconductor plastic package |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101814482A (en) | 2010-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101814482B (en) | Base island lead frame structure and production method thereof | |
| CN101814481B (en) | No-pad lead frame structure and production method thereof | |
| CN101840901B (en) | Lead frame structure of static release ring without paddle and production method thereof | |
| CN102376672B (en) | Foundation island-free ball grid array packaging structure and manufacturing method thereof | |
| CN101814446B (en) | Island expose and multi-salient-point island expose lead frame structure and carving and plating method thereof | |
| CN201752013U (en) | Packaging structure capable of directly placing multi-ring pin by chip and passive device | |
| CN201681936U (en) | Passive component packaging structure without substrate | |
| CN102420206B (en) | Four-side pin-free packaging structure subjected to plating and etching sequentially and manufacturing method thereof | |
| CN201838581U (en) | Encapsulation structure without pin around | |
| CN201752004U (en) | Packaging structure for arranging chip directly | |
| CN201681895U (en) | Lead frame structure without base island | |
| CN101840902B (en) | Direct chip placing lead frame structure and production method thereof | |
| CN201681890U (en) | Lead frame structure for direct placement by chip | |
| CN201681893U (en) | Lead frame structure with base islands | |
| CN101853832B (en) | Base island exposed type and embedded type base island lead frame structure and first-engraving last-plating method thereof | |
| CN201681873U (en) | Multiple base island exposing type single-ring pin packaging structure | |
| CN201681896U (en) | No-paddle dap packaging structure | |
| CN201752008U (en) | Paddle-free lead frame structure with static discharge ring | |
| CN201752011U (en) | Foundation island-free and multi-ring pin packaging structure | |
| CN201681897U (en) | Non-base island multi-pin static releasing coil packing structure | |
| CN201681935U (en) | Non-paddle multiturn pin static release ring passive device packaging structure | |
| CN201681933U (en) | Pin-type packaging structure with direct placement of chip and reactive device | |
| CN101826503B (en) | Sinking pad and multi-bump pad lead frame structure and method for carving before plating | |
| CN201752006U (en) | Encapsulation structure with base island and multiple circles of pins | |
| CN101826502B (en) | Island-exposed and submerged island-exposed type lead frame structure and method for sequentially etching and plating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20161230 Address after: The 300000 Tianjin FTA test area (Dongjiang Bonded Port) No. 6865 North Road, 1-1-1802-7 financial and trade center of Asia Patentee after: Xin Xin finance leasing (Tianjin) Co., Ltd. Address before: 214434 Binjiang Middle Road, Jiangyin Development Zone, Jiangsu, China, 275 Patentee before: Jiangsu Changdian Sci. & Tech. Co., Ltd. |
|
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20100825 Assignee: Jiangsu Changjiang Electronics Technology Co., Ltd. Assignor: Xin Xin finance leasing (Tianjin) Co., Ltd. Contract record no.: 2017320000152 Denomination of invention: Base island lead frame structure and production method thereof Granted publication date: 20120425 License type: Exclusive License Record date: 20170614 |
|
| EC01 | Cancellation of recordation of patent licensing contract | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY Co.,Ltd. Assignor: Xin Xin finance leasing (Tianjin) Co., Ltd. Contract record no.: 2017320000152 Date of cancellation: 20200416 |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200423 Address after: 214434, No. 78, mayor road, Chengjiang, Jiangsu, Jiangyin, Wuxi Patentee after: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 1-1-1802-7, North Zone, financial and Trade Center, No. 6865, Asia Road, Tianjin pilot free trade zone (Dongjiang Free Trade Port Area) Patentee before: Xin Xin finance leasing (Tianjin) Co., Ltd. |