CN102420206B - Four-side pin-free packaging structure subjected to plating and etching sequentially and manufacturing method thereof - Google Patents

Four-side pin-free packaging structure subjected to plating and etching sequentially and manufacturing method thereof Download PDF

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CN102420206B
CN102420206B CN201110389758.5A CN201110389758A CN102420206B CN 102420206 B CN102420206 B CN 102420206B CN 201110389758 A CN201110389758 A CN 201110389758A CN 102420206 B CN102420206 B CN 102420206B
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island
metal substrate
pin
chip
back side
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CN102420206A (en
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王新潮
梁志忠
谢洁人
吴昊
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Priority to PCT/CN2012/000019 priority patent/WO2013078750A1/en
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    • H01L2924/30107—Inductance

Abstract

The invention relates to a four-side pin-free packaging structure subjected to plating and etching sequentially and a manufacturing method thereof. The packaging structure comprises an outer pin (2), wherein an inner pin (4) is formed on a front side of the outer pin (2) in a multilayer electroplating mode; a chip (5) is arranged between the outer pin (2) and the inner pin (4); the front side of the inner pin (4) extends next to the chip (5); the front side of the chip (5) is connected with the front side of the inner pin (4) through a metal wire (6); plastic encapsulation materials (7) are encapsulated outside the inner pin (4), the chip (5) and the metal wire (6); and the back of the outer pin (2) is provided with a second metal layer (9). The invention has the advantages that: double-sided etching working procedures of a metal substrate are saved, the operating cost of the procedures is reduced, and because the inner pin is formed in the multilayer electroplating mode and the outer pin is formed in a mode of plating and etching sequentially, so high density capacities of the inner pin and the outer pin are achieved.

Description

First plate and carve afterwards four sides non-leaded package and manufacture method thereof
Technical field
The present invention relates to one and first plate and carve afterwards four sides non-leaded package and manufacture method thereof, belong to semiconductor packaging field.
Background technology
Traditional lead frame structure mainly contains two kinds:
The first: adopt metal substrate to carry out, after chemical etching and plating, sticking the resistant to elevated temperatures glued membrane of one deck at the back side of metal substrate and forming the leadframe carrier (as shown in Figure 83) that can carry out encapsulation process;
The second: adopt metal substrate first to carry out chemistry at the back side of metal substrate and etch partially, again plastic packaging material being carried out in the aforementioned region having etched partially through chemistry seals, the chemistry that afterwards front of metal substrate is carried out to interior pin etches partially, after completing, carry out again the plating work on pin surface in lead frame, complete the making (as shown in Figure 85) of lead frame.
And above-mentioned two kinds of lead frames foot point not below having existed in encapsulation process:
The first:
1), the lead frame of this kind is because sticking the glued membrane that one deck costliness can high temperature resistance in the back side, so directly increased high cost;
2), also because must stick the glued membrane that one deck can high temperature resistance for the back side of the lead frame of this kind, so the load technique in encapsulation process can only be used conduction or non-conductive bonding material, and the technique that can not adopt eutectic technology and slicken solder is completely carried out load, so selectable product category just has larger limitation;
3), again because must stick the glued membrane that one deck can high temperature resistance for the back side of the lead frame of this kind, and in metal wire bonding technology in encapsulation process, because glued membrane that for this reason can high temperature resistance is soft materials, so caused the unstable of metal wire bonding parameter, serious impact the quality of metal wire bonding and the stability of production reliability;
4), again because must stick the glued membrane that one deck can high temperature resistance for the back side of the lead frame of this kind, and plastic package process process in encapsulation process, infiltrate plastic packaging material because injection pressure when plastic packaging is easy to cause between lead frame and glued membrane, and be that the kenel of conduction has become insulation pin (as shown in Figure 84) on the contrary because infiltrated plastic packaging material by the former metal leg that should belong to.
The second:
1), because carried out the etching operation of secondary respectively, so increased the cost of procedures more;
2), the composition of lead frame be metallics add epoxy resin material (plastic packaging material) thus under the operational environment of high temperature and low temperature easily because the Swelling and contraction stress of different material not identical produces lead frame warpage issues;
3) thereby, also because the warpage of lead frame directly has influence on the precision of the device chip in packaging process and the smooth and easy impact production yield of lead frame transport process;
4) thereby, also because the warpage of lead frame directly has influence on the aligning accuracy of the metal wire bonding in packaging process and the smooth and easy impact production yield of lead frame transport process;
5), because the interior pin in lead frame front is to adopt etched technology, must be greater than 100 μ m so the pin of pin is wide in etching, and the gap of interior pin and interior pin also must be greater than 100 μ m, accomplishes the high density ability of interior pin so more difficult.
In order to address the above problem, the applicant's earlier application name be called the patent of invention of " having base island lead frame structure and production method thereof ", its application number is 20101027029.9, it has following beneficial effect:
1), the back side of this kind of lead frame do not need to stick one deck costliness can high temperature resistance glued membrane, so directly reduced high cost;
2), because do not need to stick the glued membrane that one deck can high temperature resistance for the back side of this kind of lead frame yet, so the technique in encapsulation process is except being used conduction or nonconducting resin technique, can also adopt the technique of eutectic technology and slicken solder to carry out load, so selectable kind is wider;
3), again because do not need to stick the glued membrane that one deck can high temperature resistance for the back side of the lead frame of this kind, guaranteed the stability of ball bonding parameter, guaranteed the stability of the quality of ball bonding and the reliability of product;
4), again because do not need to stick the glued membrane that one deck can high temperature resistance for the back side of the lead frame of this kind, thereby in the technical process of encapsulation, can not cause completely and between lead frame and glued membrane, infiltrate plastic packaging material;
5), plastic packaging material is set in the region between described metal leg (pin) and metal leg (pin), this plastic packaging material envelopes the height of whole metal leg together with plastic packaging material in plastic packaging process, so the constraint ability of plastic-sealed body and metal leg just becomes large, there will be no the problem that produces pin;
6), owing to having applied plating mode and the back etched technology of positive interior pin, so the pin in lead frame front can be extended to as much as possible to the side of Ji Dao, impel chip and pin distance significantly to shorten, so the cost of metal wire also can significantly reduce (the especially metal wire of expensive proof gold matter);
7), also because also speedup (especially the product of storage class and need the calculating of mass data more outstanding) significantly of the signal output speed that the shortening of metal wire makes chip, because the length of metal wire has shortened, so the interference of signal is also significantly reduced in the existing dead resistance of metal wire, parasitic capacitance and stray inductance;
8), because having used the plating elongation technology of interior pin, so can be easy to produce the distance between high pin number and highdensity pin and pin, make encapsulation volume and area can significantly dwindle;
9), because the volume after encapsulation is significantly dwindled, more directly embody material cost and significantly decline, due to the minimizing of material usage, also reduced significantly the puzzlement of the environmental issue such as discarded object.
But, still have following deficiency:
1), metal substrate carries out after two-sided etching operation, follow-uply also will carry out etching operation for the second time, therefore increased the cost of procedures, also more serious to the pollution of environment;
2), the interior pin in lead frame front adopts is etching technique, must be greater than 100 μ m so the pin of pin is wide in etching, and gap between interior pin and interior pin is also greater than 100 μ m, accomplishes the high density ability of interior pin so more difficult;
3), the outer pin at the lead frame back side is also to adopt etching technique, must be greater than 100 μ m so the pin of the outer pin of etching is wide, and gap between outer pin and outer pin is also greater than 100 μ m, accomplishes the high density ability of outer pin so more difficult.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, provide one first to plate and carve afterwards four sides non-leaded package and manufacture method thereof, it has saved the two-sided etched flow chart of metal substrate, reduce the cost of procedures, and because adopting multilayer plating mode, interior pin forms, outer pin employing is first plated the mode of carving afterwards and is formed, and has therefore realized the high density ability of interior pin and outer pin.
The object of the present invention is achieved like this: one is first plated and carved afterwards four sides non-leaded package, be characterized in: it comprises outer pin, described outer pin front forms interior pin by multilayer plating mode, between described interior pin and interior pin, be provided with a chip by conduction or non-conductive bonding material, described interior pin front extends to chip side, between described chip front side and interior pin front, be connected with metal wire, described interior pin, chip and metal wire outer encapsulating have plastic packaging material, region between region and outer pin and the outer pin of described outer pin periphery is equipped with gap filler, and expose outside gap filler at the back side of outer pin, be provided with the second metal level at the back side of exposing the outer pin outside gap filler.
The present invention first plates the manufacture method of carving afterwards four sides non-leaded package, and described method comprises following processing step:
Step 1, get metal substrate
Step 2, pad pasting operation
Utilize film sticking equipment to stick respectively the photoresist film that can carry out exposure imaging at front and the back side of metal substrate,
Step 3, the positive photoresist film of removing part figure of metal substrate
The metal substrate front that utilizes exposure imaging equipment that step 2 is completed to pad pasting operation carry out figure exposure, develop and the photoresist film of removing part figure, the regional graphics of electroplating to expose the follow-up needs in metal substrate front,
Step 4, plating the first metal layer
To forming the first metal layer by multilayer plating mode in the positive graphics field of removing part photoresist film of metal substrate in step 3,
Step 5, metal substrate front and back side striping operation
The photoresist film of metal substrate front and back side remainder is removed, is formed interior pin at metal substrate vis-a-vis,
Step 6, load routing
The implantation of chip is carried out by conduction or non-conductive bonding material in metal substrate front between the interior pin forming in step 5, and carries out the operation of bonding metal wire between chip front side and interior pin front,
Step 7, seal
Utilize plastic packaging material injection device, the metal substrate that completes implanted chip and the operation of bonding metal wire sealed to plastic packaging material operation, and carry out the curing operation after plastic packaging material is sealed,
Step 8, pad pasting operation
Utilize film sticking equipment complete seal and the metal substrate of curing operation in front and the back side stick respectively the photoresist film that can carry out exposure imaging,
The photoresist film of part figure is removed at step 9, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 8 is completed to pad pasting operation carry out figure exposure, develop and the photoresist film of removal part figure, the regional graphics of electroplating to expose the follow-up needs in the metal substrate back side,
Step 10, plating the second metal level
In step 9, in the graphics field of metal substrate back side removal part photoresist film, electroplate the second metal level 9,
Step 11, metal substrate front and back side striping operation
The photoresist film of metal substrate front and back side remainder is removed,
Step 12: pad pasting operation
Utilize film sticking equipment again to stick the photoresist film that can carry out exposure imaging completing front and the back side of electroplating the second metal level and remove the metal substrate after remaining photoresist film,
Part photoresist film is removed at step 13, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 12 is completed to pad pasting operation is carried out exposure, the development of figure and removes part figure photoresist film, and to expose, the metal substrate back side is follow-up need to carry out etched regional graphics,
Step 14, the metal substrate back side are carried out total eclipse quarter or are etched partially operation
The metal substrate back side in step 13 is removed to the graphics field of part photoresist film and carries out total eclipse quarter simultaneously or etch partially, form the etching area of depression at the metal substrate back side, relatively form outer pin simultaneously,
Step 15, metal substrate front and back side striping operation
The photoresist film of metal substrate front and back side remainder is removed,
Step 10 six, metal substrate back etched area filling gap filler
In the etching area at the described metal substrate back side, utilize pad device to carry out filling gap filler, and carry out gap filler filling or seal after rear curing operation,
Step 10 seven, cutting finished product
Step 10 six is completed and sealed and the semi-finished product of curing operation carry out cutting operation, more than cuttings of the plastic-sealed body module that contains chip that script is integrated in array aggregate mode are independent, make first to plate to carve afterwards four sides non-leaded package finished product.
Compared with prior art, the invention has the beneficial effects as follows:
1, it has saved the two-sided and etching flow chart of secondary respectively of metal substrate, has reduced cost, time, personnel, power, the material of procedures, has also reduced the pollution of issuable harmful substance to environment in etching work procedure simultaneously;
2, because lead frame front has adopted fine rule electric plating method, so positive pin widths minimum can reach 25 μ m, the distance minimum between interior pin and interior pin reaches 25 μ m, embodies fully the high density ability of pin in lead frame.
3, first plate the method for carving afterwards because the lead frame back side has adopted, so the pin widths minimum at the back side can reach 25 μ m, the distance minimum between outer pin and outer pin reaches 25 μ m, embodies fully the high density ability of the outer pin of lead frame.
4, only has a kind of material of lead frame when load routing, in the processing procedure process of 380 and 420 degrees Celsius of use superhigh temperature, because not having the Swelling and contraction that the difference of the multiple material coefficient of expansion is brought to impact, guarantee superhigh temperature resistant (be the generally 200 ℃ following) performance of lead frame, can Yin Gaowen thermal strain shape and produce the warpage issues of lead frame.
Accompanying drawing explanation
Fig. 1 ~ Figure 18 is that the present invention first plates each operation schematic diagram of carving afterwards four sides non-leaded package embodiment 1 manufacture method.
Figure 19 (A) carves the structural representation of four sides non-leaded package embodiment 1 afterwards for the present invention first plates.
Figure 19 (B) is the vertical view of Figure 19 (A).
Figure 20 (A) carves the structural representation of four sides non-leaded package embodiment 2 afterwards for the present invention first plates.
Figure 20 (B) is the vertical view of Figure 20 (A).
Figure 21 (A) carves the structural representation of four sides non-leaded package embodiment 3 afterwards for the present invention first plates.
Figure 21 (B) is the vertical view of Figure 21 (A).
Figure 22 (A) carves the structural representation of four sides non-leaded package embodiment 4 afterwards for the present invention first plates.
Figure 22 (B) is the vertical view of Figure 22 (A).
Figure 23 (A) carves the structural representation of four sides non-leaded package embodiment 5 afterwards for the present invention first plates.
Figure 23 (B) is the vertical view of Figure 23 (A).
Figure 24 (A) carves the structural representation of four sides non-leaded package embodiment 6 afterwards for the present invention first plates.
Figure 24 (B) is the vertical view of Figure 24 (A).
Figure 25 (A) carves the structural representation of four sides non-leaded package embodiment 7 afterwards for the present invention first plates.
Figure 25 (B) is the vertical view of Figure 25 (A).
Figure 26 (A) carves the structural representation of four sides non-leaded package embodiment 8 afterwards for the present invention first plates.
Figure 26 (B) is the vertical view of Figure 26 (A).
Figure 27 (A) carves the structural representation of four sides non-leaded package embodiment 9 afterwards for the present invention first plates.
Figure 27 (B) is the vertical view of Figure 27 (A).
Figure 28 (A) carves the structural representation of four sides non-leaded package embodiment 10 afterwards for the present invention first plates.
Figure 28 (B) is the vertical view of Figure 28 (A).
Figure 29 (A) carves the structural representation of four sides non-leaded package embodiment 11 afterwards for the present invention first plates.
Figure 29 (B) is the vertical view of Figure 29 (A).
Figure 30 (A) carves the structural representation of four sides non-leaded package embodiment 12 afterwards for the present invention first plates.
Figure 30 (B) is the vertical view of Figure 30 (A).
Figure 31 (A) carves the structural representation of four sides non-leaded package embodiment 13 afterwards for the present invention first plates.
Figure 31 (B) is the vertical view of Figure 31 (A).
Figure 32 (A) carves the structural representation of four sides non-leaded package embodiment 14 afterwards for the present invention first plates.
Figure 32 (B) is the vertical view of Figure 32 (A).
Figure 33 (A) carves the structural representation of four sides non-leaded package embodiment 15 afterwards for the present invention first plates.
Figure 33 (B) is the vertical view of Figure 33 (A).
Figure 34 (A) carves the structural representation of four sides non-leaded package embodiment 16 afterwards for the present invention first plates.
Figure 34 (B) is the vertical view of Figure 34 (A).
Figure 35 (A) carves the structural representation of four sides non-leaded package embodiment 17 afterwards for the present invention first plates.
Figure 35 (B) is the vertical view of Figure 35 (A).
Figure 36 (A) carves the structural representation of four sides non-leaded package embodiment 18 afterwards for the present invention first plates.
Figure 36 (B) is the vertical view of Figure 36 (A).
Figure 37 (A) carves the structural representation of four sides non-leaded package embodiment 19 afterwards for the present invention first plates.
Figure 37 (B) is the vertical view of Figure 37 (A).
Figure 38 (A) carves the structural representation of four sides non-leaded package embodiment 20 afterwards for the present invention first plates.
Figure 38 (B) is the vertical view of Figure 38 (A).
Figure 39 (A) carves the structural representation of four sides non-leaded package embodiment 21 afterwards for the present invention first plates.
Figure 39 (B) is the vertical view of Figure 39 (A).
Figure 40 (A) carves the structural representation of four sides non-leaded package embodiment 22 afterwards for the present invention first plates.
Figure 40 (B) is the vertical view of Figure 40 (A).
Figure 41 (A) carves the structural representation of four sides non-leaded package embodiment 23 afterwards for the present invention first plates.
Figure 41 (B) is the vertical view of Figure 41 (A).
Figure 42 (A) carves the structural representation of four sides non-leaded package embodiment 24 afterwards for the present invention first plates.
Figure 42 (B) is the vertical view of Figure 42 (A).
Figure 43 (A) carves the structural representation of four sides non-leaded package embodiment 25 afterwards for the present invention first plates.
Figure 43 (B) is the vertical view of Figure 43 (A).
Figure 44 (A) carves the structural representation of four sides non-leaded package embodiment 26 afterwards for the present invention first plates.
Figure 44 (B) is the vertical view of Figure 44 (A).
Figure 45 (A) carves the structural representation of four sides non-leaded package embodiment 27 afterwards for the present invention first plates.
Figure 45 (B) is the vertical view of Figure 45 (A).
Figure 46 (A) carves the structural representation of four sides non-leaded package embodiment 28 afterwards for the present invention first plates.
Figure 46 (B) is the vertical view of Figure 46 (A).
Figure 47 (A) carves the structural representation of four sides non-leaded package embodiment 29 afterwards for the present invention first plates.
Figure 47 (B) is the vertical view of Figure 47 (A).
Figure 48 (A) carves the structural representation of four sides non-leaded package embodiment 30 afterwards for the present invention first plates.
Figure 48 (B) is the vertical view of Figure 48 (A).
Figure 49 (A) carves the structural representation of four sides non-leaded package embodiment 31 afterwards for the present invention first plates.
Figure 49 (B) is the vertical view of Figure 49 (A).
Figure 50 (A) carves the structural representation of four sides non-leaded package embodiment 32 afterwards for the present invention first plates.
Figure 50 (B) is the vertical view of Figure 50 (A).
Figure 51 (A) carves the structural representation of four sides non-leaded package embodiment 33 afterwards for the present invention first plates.
Figure 51 (B) is the vertical view of Figure 51 (A).
Figure 52 (A) carves the structural representation of four sides non-leaded package embodiment 34 afterwards for the present invention first plates.
Figure 52 (B) is the vertical view of Figure 52 (A).
Figure 53 (A) carves the structural representation of four sides non-leaded package embodiment 35 afterwards for the present invention first plates.
Figure 53 (B) is the vertical view of Figure 53 (A).
Figure 54 (A) carves the structural representation of four sides non-leaded package embodiment 36 afterwards for the present invention first plates.
Figure 54 (B) is the vertical view of Figure 54 (A).
Figure 55 (A) carves the structural representation of four sides non-leaded package embodiment 37 afterwards for the present invention first plates.
Figure 55 (B) is the vertical view of Figure 55 (A).
Figure 56 (A) carves the structural representation of four sides non-leaded package embodiment 38 afterwards for the present invention first plates.
Figure 56 (B) is the vertical view of Figure 56 (A).
Figure 57 (A) carves the structural representation of four sides non-leaded package embodiment 39 afterwards for the present invention first plates.
Figure 57 (B) is the vertical view of Figure 57 (A).
Figure 58 (A) carves the structural representation of four sides non-leaded package embodiment 40 afterwards for the present invention first plates.
Figure 58 (B) is the vertical view of Figure 58 (A).
Figure 59 (A) carves the structural representation of four sides non-leaded package embodiment 41 afterwards for the present invention first plates.
Figure 59 (B) is the vertical view of Figure 59 (A).
Figure 60 (A) carves the structural representation of four sides non-leaded package embodiment 42 afterwards for the present invention first plates.
Figure 60 (B) is the vertical view of Figure 60 (A).
Figure 61 (A) carves the structural representation of four sides non-leaded package embodiment 43 afterwards for the present invention first plates.
Figure 61 (B) is the vertical view of Figure 61 (A).
Figure 62 (A) carves the structural representation of four sides non-leaded package embodiment 44 afterwards for the present invention first plates.
Figure 62 (B) is the vertical view of Figure 62 (A).
Figure 63 (A) carves the structural representation of four sides non-leaded package embodiment 45 afterwards for the present invention first plates.
Figure 63 (B) is the vertical view of Figure 63 (A).
Figure 64 (A) carves the structural representation of four sides non-leaded package embodiment 46 afterwards for the present invention first plates.
Figure 64 (B) is the vertical view of Figure 64 (A).
Figure 65 (A) carves the structural representation of four sides non-leaded package embodiment 47 afterwards for the present invention first plates.
Figure 65 (B) is the vertical view of Figure 65 (A).
Figure 66 (A) carves the structural representation of four sides non-leaded package embodiment 48 afterwards for the present invention first plates.
Figure 66 (B) is the vertical view of Figure 66 (A).
Figure 67 (A) carves the structural representation of four sides non-leaded package embodiment 49 afterwards for the present invention first plates.
Figure 67 (B) is the vertical view of Figure 67 (A).
Figure 68 (A) carves the structural representation of four sides non-leaded package embodiment 50 afterwards for the present invention first plates.
Figure 68 (B) is the vertical view of Figure 68 (A).
Figure 69 (A) carves the structural representation of four sides non-leaded package embodiment 51 afterwards for the present invention first plates.
Figure 69 (B) is the vertical view of Figure 69 (A).
Figure 70 (A) carves the structural representation of four sides non-leaded package embodiment 52 afterwards for the present invention first plates.
Figure 70 (B) is the vertical view of Figure 70 (A).
Figure 71 (A) carves the structural representation of four sides non-leaded package embodiment 53 afterwards for the present invention first plates.
Figure 71 (B) is the vertical view of Figure 71 (A).
Figure 72 (A) carves the structural representation of four sides non-leaded package embodiment 54 afterwards for the present invention first plates.
Figure 72 (B) is the vertical view of Figure 72 (A).
Figure 73 (A) carves the structural representation of four sides non-leaded package embodiment 55 afterwards for the present invention first plates.
Figure 73 (B) is the vertical view of Figure 73 (A).
Figure 74 (A) carves the structural representation of four sides non-leaded package embodiment 56 afterwards for the present invention first plates.
Figure 74 (B) is the vertical view of Figure 74 (A).
Figure 75 (A) carves the structural representation of four sides non-leaded package embodiment 57 afterwards for the present invention first plates.
Figure 75 (B) is the vertical view of Figure 75 (A).
Figure 76 (A) carves the structural representation of four sides non-leaded package embodiment 58 afterwards for the present invention first plates.
Figure 76 (B) is the vertical view of Figure 76 (A).
Figure 77 (A) carves the structural representation of four sides non-leaded package embodiment 59 afterwards for the present invention first plates.
Figure 77 (B) is the vertical view of Figure 77 (A).
Figure 78 (A) carves the structural representation of four sides non-leaded package embodiment 60 afterwards for the present invention first plates.
Figure 78 (B) is the vertical view of Figure 78 (A).
Figure 79 (A) carves the structural representation of four sides non-leaded package embodiment 61 afterwards for the present invention first plates.
Figure 79 (B) is the vertical view of Figure 79 (A).
Figure 80 (A) carves the structural representation of four sides non-leaded package embodiment 62 afterwards for the present invention first plates.
Figure 80 (B) is the vertical view of Figure 80 (A).
Figure 81 (A) carves the structural representation of four sides non-leaded package embodiment 63 afterwards for the present invention first plates.
Figure 81 (B) is the vertical view of Figure 81 (A).
Figure 82 (A) carves the structural representation of four sides non-leaded package embodiment 64 afterwards for the present invention first plates.
Figure 82 (B) is the vertical view of Figure 82 (A).
Figure 83 is the schematic diagram that in the past sticked high temperature resistant glued membrane on four sides without the pin lead frame back side.
Figure 84 is the schematic diagram of high temperature resistant glued membrane is sticked at the back side in the past four sides flash during without pin leadframe package.
Figure 85 is the structural representation of in the past sealing in advance two-sided etched lead frame.
Wherein:
Wai Ji island 1, outer pin 2, Nei Ji island 3, interior pin 4, chip 5, metal wire 6, plastic packaging material 7, conduction or non-conductive bonding material 8, the second metal level 9, gap filler 10, metal substrate 11, photoresist film 12 or 13, the first metal layer 14, passive device 15, outer static release ring 16, interior static release ring 17.
Embodiment
The present invention first plate carve afterwards four sides non-leaded package and manufacture method as follows:
Embodiment 1: Wu Ji island single-chip individual pen pin (Wu Neiji island)
Referring to Figure 19 (A) and Figure 19 (B), Figure 19 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 1.Figure 19 (B) is the vertical view of Figure 19 (A).Can be found out by Figure 19 (A) and Figure 19 (B), the present invention first plates and carves afterwards four sides non-leaded package, it comprises outer pin 2, described outer pin 2 fronts form interior pin 4 by multilayer plating mode, described interior pin 4 is referred to as the first metal layer 14, between described interior pin 4 and interior pin 4, be provided with a chip 5 by conduction or non-conductive bonding material 8, described interior pin 4 fronts extend to chip 5 sides, between described chip 5 fronts and interior pin 4 fronts, be connected with metal wire 6, described interior pin 4, chip 5 and metal wire 6 outer encapsulatings have plastic packaging material 7, region between region and outer pin 2 and the outer pin 2 of described outer pin 2 peripheries is equipped with gap filler 10, and expose outside gap filler 10 at the back side of outer pin 2, be provided with the second metal level 9 at the back side of exposing the outer pin 2 outside gap filler 10.
Its manufacture method is as follows:
Step 1, get metal substrate
Referring to Fig. 1, get the metal substrate 11 that a slice thickness is suitable, the material of metal substrate 11 can convert according to the function of chip and characteristic, for example: copper, aluminium, iron, copper alloy, stainless steel or dilval etc.
Step 2, pad pasting operation
Referring to Fig. 2; utilize film sticking equipment to stick respectively the photoresist film 12 and 13 that can carry out exposure imaging at front and the back side of metal substrate 11; to protect follow-up electroplated metal layer process operation, therefore photoresist film can be that dry lithography glued membrane can be also wet type photoresist film.
Step 3, the positive photoresist film of removing part figure of metal substrate
Referring to Fig. 3, metal substrate 11 fronts that utilize exposure imaging equipment that step 2 is completed to pad pasting operation carry out figure exposure, develop and the photoresist film of removal part figure, the regional graphics of electroplating to expose the positive follow-up needs of metal substrate 11.
Step 4, plating the first metal layer
Referring to Fig. 4, in step 3, in the positive graphics field of removing part photoresist film of metal substrate 11, form the first metal layer 14 by multilayer plating mode, described the first metal layer 14 can adopt and be followed successively by nickel, copper, nickel, palladium, five layers of metal level of gold or nickel, copper, silver-colored three-layer metal layer from bottom to top, or other similar structures.Take nickel, copper, nickel, palladium, five layers of metal level of gold as example, wherein ground floor nickel dam mainly plays the effect on anti-etching barrier layer, and middle copper layer, nickel dam and palladium layer mainly play a part in conjunction with increasing, outermost gold layer mainly plays the effect with metal wire bonding.
Step 5, metal substrate front and back side striping operation
Referring to Fig. 5, the photoresist film of metal substrate 11 fronts and back side remainder is removed, form interior pin 4 at metal substrate 11 vis-a-vis.
Step 6, load routing
Referring to Fig. 6 ~ Fig. 7, the implantation of chip 5 is carried out by conduction or non-conductive bonding material 8 in metal substrate 11 fronts between the interior pin 4 forming in step 5, and carries out 6 operations of bonding metal wire between chip 5 fronts and interior pin 4 fronts.
Step 7, seal
Referring to Fig. 8, utilize plastic packaging material injection device, the metal substrate 11 that completes implanted chip and the operation of bonding metal wire is sealed to plastic packaging material operation, and carry out plastic packaging material and seal rear curing operation.
Step 8, pad pasting operation
Referring to Fig. 9; utilize film sticking equipment complete seal and curing operation after metal substrate 11 in front and the back side stick respectively the photoresist film 12 and 13 that can carry out exposure imaging; to protect follow-up electroplated metal layer process operation, therefore photoresist film can be that dry lithography glued membrane can be also wet type photoresist film.
The photoresist film of part figure is removed at step 9, the metal substrate back side
Referring to Figure 10, metal substrate 11 back sides that utilize exposure imaging equipment that step 8 is completed to pad pasting operation carry out figure exposure, develop and the photoresist film of removal part figure, the regional graphics of electroplating to expose the metal substrate 11 follow-up needs in the back side.
Step 10, plating the second metal level
Referring to Figure 11, the composition of electroplating the second metal level 9, the second metal levels 9 in step 9 in the graphics field of metal substrate 11 back sides removal part photoresist films can adopt golden nickel gold, golden ambrose alloy nickel gold, NiPdAu, golden NiPdAu, nickel gold, silver or tin etc. according to the function of different chips.
Step 11, metal substrate front and back side striping operation
Referring to Figure 12, the photoresist film of metal substrate front and back side remainder is removed.
Step 12: pad pasting operation
Referring to Figure 13; utilize film sticking equipment to electroplate the second metal level and remove metal substrate 11 after remaining photoresist film in front and the photoresist film 12 and 13 that can carry out exposure imaging is sticked at the back side again completing; to protect follow-up etch process operation, therefore photoresist film can be that dry lithography glued membrane can be also wet type photoresist film.
The photoresist film of part figure is removed at step 13, the metal substrate back side
Referring to Figure 14, metal substrate 11 back sides that utilize exposure imaging equipment that step 12 is completed to pad pasting operation carry out figure exposure, develop and the photoresist film of removal part figure, to expose, metal substrate 11 back sides are follow-up need to carry out etched regional graphics.
Step 14, the metal substrate back side are carried out total eclipse quarter or are etched partially operation
The graphics field of removing part photoresist film referring to Figure 15, to the metal substrate back side in step 13 is carried out total eclipse quarter simultaneously or etches partially, and forms the etching area of depression at the metal substrate back side, relatively forms outer pin 2 simultaneously.
Step 15, metal substrate front and back side striping operation
Referring to Figure 16, the photoresist film of metal substrate front and back side remainder is removed.
Step 10 six, metal substrate back etched area filling gap filler
Referring to Figure 17, in the etching area at the described metal substrate back side, utilize pad device to carry out filling gap filler 10, and carry out gap filler 10 fillings or seal after curing operation, described gap filler can be to have filler or packless gap filler.
Step 10 seven, cutting finished product
Referring to Figure 18, step 10 six is completed and sealed and the semi-finished product of curing operation carry out cutting operation, more than cuttings of plastic-sealed body module that script integrated and contain chip in array aggregate mode are independent, make first to plate to carve afterwards four sides non-leaded package finished product.
Embodiment 2: Wu Ji island single-chip individual pen pin (You Neiji island)
Referring to Figure 20 (A) and Figure 20 (B), Figure 20 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 2.Figure 20 (B) is the vertical view of Figure 20 (A).Can be found out by Figure 20 (A) and Figure 20 (B), embodiment 2 is only with the difference of embodiment 1: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 3: Wu Ji island single-chip individual pen pin passive device (Wu Neiji island)
Referring to Figure 21 (A) and Figure 21 (B), Figure 21 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 3.Figure 21 (B) is the vertical view of Figure 21 (A).Can be found out by Figure 21 (A) and Figure 21 (B), the difference of embodiment 3 and embodiment 1 is only: between described interior pin 4 and interior pin 4, have passive device 15 by conduction or 8 cross-over connections of non-conductive bonding material.
Embodiment 4: Wu Ji island single-chip individual pen pin passive device (You Neiji island)
Referring to Figure 22 (A) and Figure 22 (B), Figure 22 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 4.Figure 22 (B) is the vertical view of Figure 22 (A).Can be found out by Figure 22 (A) and Figure 22 (B), embodiment 4 is only with the difference of embodiment 3: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 5: Wu Ji island single-chip individual pen pin static release ring (Wu Neiji island)
Referring to Figure 23 (A) and Figure 23 (B), Figure 23 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 5.Figure 23 (B) is the vertical view of Figure 23 (A).Can be found out by Figure 23 (A) and Figure 23 (B), the difference of embodiment 5 and embodiment 1 is only: between described outer pin 2 and outer pin 2, be provided with outer static release ring 16, described outer static release ring 16 fronts form interior static release ring 17 by multilayer plating mode, between described interior static release ring 17 fronts and chip 5 fronts, are connected by metal wire 6.
Embodiment 6: Wu Ji island single-chip individual pen pin static release ring (You Neiji island)
Referring to Figure 24 (A) and Figure 24 (B), Figure 24 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 6.Figure 24 (B) is the vertical view of Figure 24 (A).Can be found out by Figure 24 (A) and Figure 24 (B), embodiment 6 is only with the difference of embodiment 1: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 7: Wu Ji island single-chip individual pen pin static release ring passive device (Wu Neiji island)
Referring to Figure 25 (A) and Figure 25 (B), Figure 25 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 7.Figure 25 (B) is the vertical view of Figure 25 (A).Can be found out by Figure 25 (A) and Figure 25 (B), the difference of embodiment 7 and embodiment 5 is only: between described interior pin 4 and interior pin 4, have passive device 15 by conduction or 8 cross-over connections of non-conductive bonding material.
Embodiment 8: Wu Ji island single-chip individual pen pin static release ring passive device (You Neiji island)
Referring to Figure 26 (A) and Figure 26 (B), Figure 26 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 8.Figure 26 (B) is the vertical view of Figure 26 (A).Can be found out by Figure 26 (A) and Figure 26 (B), embodiment 8 is only with the difference of embodiment 7: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 9: Wu Ji island single-chip multi-circle pin (Wu Neiji island)
Referring to Figure 27 (A) and Figure 27 (B), Figure 27 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 9.Figure 27 (B) is the vertical view of Figure 27 (A).Can be found out by Figure 27 (A) and Figure 27 (B), embodiment 9 is only with the difference of embodiment 1: described outer pin 2 has multi-turn, and the outer pin of described multi-turn 2 fronts form interior pin 4 by multilayer plating mode.
Embodiment 10: Wu Ji island single-chip multi-circle pin (You Neiji island)
Referring to Figure 28 (A) and Figure 28 (B), Figure 28 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 10.Figure 28 (B) is the vertical view of Figure 28 (A).Can be found out by Figure 28 (A) and Figure 28 (B), embodiment 10 is only with the difference of embodiment 9: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 11: Wu Ji island single-chip multi-circle pin passive device (Wu Neiji island)
Referring to Figure 29 (A) and Figure 29 (B), Figure 29 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 11.Figure 29 (B) is the vertical view of Figure 29 (A).Can be found out by Figure 29 (A) and Figure 29 (B), the difference of embodiment 11 and embodiment 9 is only: between described interior pin 4 and interior pin 4, have passive device 15 by conduction or 8 cross-over connections of non-conductive bonding material.
Embodiment 12: Wu Ji island single-chip multi-circle pin passive device (You Neiji island)
Referring to Figure 30 (A) and Figure 30 (B), Figure 30 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 12.Figure 30 (B) is the vertical view of Figure 30 (A).Can be found out by Figure 30 (A) and Figure 30 (B), embodiment 12 is only with the difference of embodiment 11: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 13: Wu Ji island single-chip multi-circle pin static release ring (Wu Neiji island)
Referring to Figure 31 (A) and Figure 31 (B), Figure 31 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 13.Figure 31 (B) is the vertical view of Figure 31 (A).Can be found out by Figure 31 (A) and Figure 31 (B), the difference of embodiment 13 and embodiment 9 is only: between described outer pin 2 and outer pin 2, be provided with outer static release ring 16, described outer static release ring 16 fronts form interior static release ring 17 by multilayer plating mode, between described interior static release ring 17 fronts and chip 5 fronts, are connected by metal wire 6.
Embodiment 14: Wu Ji island single-chip multi-circle pin static release ring (You Neiji island)
Referring to Figure 32 (A) and Figure 32 (B), Figure 32 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 14.Figure 32 (B) is the vertical view of Figure 32 (A).Can be found out by Figure 32 (A) and Figure 32 (B), embodiment 14 is only with the difference of embodiment 13: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 15: Wu Ji island single-chip multi-circle pin static release ring passive device (Wu Neiji island)
Referring to Figure 33 (A) and Figure 33 (B), Figure 33 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 15.Figure 33 (B) is the vertical view of Figure 33 (A).Can be found out by Figure 33 (A) and Figure 33 (B), the difference of embodiment 15 and embodiment 13 is only: between described interior pin 4 and interior pin 4, have passive device 15 by conduction or 8 cross-over connections of non-conductive bonding material.
Embodiment 16: Wu Ji island single-chip multi-circle pin static release ring passive device (You Neiji island)
Referring to Figure 34 (A) and Figure 34 (B), Figure 34 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 16.Figure 34 (B) is the vertical view of Figure 34 (A).Can be found out by Figure 34 (A) and Figure 34 (B), embodiment 16 is only with the difference of embodiment 15: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 17: Wu Ji island multi-chip individual pen pin (Wu Neiji island)
Referring to Figure 35 (A) and Figure 35 (B), Figure 35 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 17.Figure 35 (B) is the vertical view of Figure 35 (A).Can be found out by Figure 35 (A) and Figure 35 (B), embodiment 17 is only with the difference of embodiment 1: described chip 5 has multiple, between described chip 5 fronts and chip 5 fronts, is connected by metal wire 6.
Embodiment 18: Wu Ji island multi-chip individual pen pin (You Neiji island)
Referring to Figure 36 (A) and Figure 36 (B), Figure 36 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 18.Figure 36 (B) is the vertical view of Figure 36 (A).Can be found out by Figure 36 (A) and Figure 36 (B), embodiment 18 is only with the difference of embodiment 17: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 19: Wu Ji island multi-chip individual pen pin passive device (Wu Neiji island)
Referring to Figure 37 (A) and Figure 37 (B), Figure 37 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 19.Figure 37 (B) is the vertical view of Figure 37 (A).Can be found out by Figure 37 (A) and Figure 37 (B), embodiment 19 is only with the difference of embodiment 3: described chip 5 has multiple, between described chip 5 fronts and chip 5 fronts, is connected by metal wire 6.
Embodiment 20: Wu Ji island multi-chip individual pen pin passive device (You Neiji island)
Referring to Figure 38 (A) and Figure 38 (B), Figure 38 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 20.Figure 38 (B) is the vertical view of Figure 38 (A).Can be found out by Figure 38 (A) and Figure 38 (B), embodiment 20 is only with the difference of embodiment 19: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 21: Wu Ji island multi-chip individual pen pin static release ring (Wu Neiji island)
Referring to Figure 39 (A) and Figure 39 (B), Figure 39 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 21.Figure 39 (B) is the vertical view of Figure 39 (A).Can be found out by Figure 39 (A) and Figure 39 (B), embodiment 21 is only with the difference of embodiment 5: described chip 5 has multiple, between described chip 5 fronts and chip 5 fronts, is connected by metal wire 6.
Embodiment 22: Wu Ji island multi-chip individual pen pin static release ring (You Neiji island)
Referring to Figure 40 (A) and Figure 40 (B), Figure 40 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 22.Figure 40 (B) is the vertical view of Figure 40 (A).Can be found out by Figure 40 (A) and Figure 40 (B), embodiment 22 is with the difference of embodiment 21: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 23: Wu Ji island multi-chip individual pen pin static release ring passive device (Wu Neiji island)
Referring to Figure 41 (A) and Figure 41 (B), Figure 41 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 23.Figure 41 (B) is the vertical view of Figure 41 (A).Can be found out by Figure 41 (A) and Figure 41 (B), embodiment 23 is only with the difference of embodiment 7: described chip 5 has multiple, between described chip 5 fronts and chip 5 fronts, is connected by metal wire 6.
Embodiment 24: Wu Ji island multi-chip individual pen pin static release ring passive device (You Neiji island)
Referring to Figure 42 (A) and Figure 42 (B), Figure 42 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 24.Figure 42 (B) is the vertical view of Figure 42 (A).Can be found out by Figure 42 (A) and Figure 42 (B), embodiment 24 is only with the difference of embodiment 23: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 25: Wu Ji island multi-chip multi-circle pin (Wu Neiji island)
Referring to Figure 43 (A) and Figure 43 (B), Figure 43 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 25.Figure 43 (B) is the vertical view of Figure 43 (A).Can be found out by Figure 43 (A) and Figure 43 (B), embodiment 25 is only with the difference of embodiment 17: described outer pin 2 has multi-turn, and the outer pin of described multi-turn 2 fronts form interior pin 4 by multilayer plating mode.
Embodiment 26: Wu Ji island multi-chip multi-circle pin (You Neiji island)
Referring to Figure 44 (A) and Figure 44 (B), Figure 44 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 26.Figure 44 (B) is the vertical view of Figure 44 (A).Can be found out by Figure 44 (A) and Figure 44 (B), embodiment 26 is only with the difference of embodiment 25: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 27: Wu Ji island multi-chip multi-circle pin passive device (Wu Neiji island)
Referring to Figure 45 (A) and Figure 45 (B), Figure 45 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 27.Figure 45 (B) is the vertical view of Figure 45 (A).Can be found out by Figure 45 (A) and Figure 45 (B), embodiment 27 is only with the difference of embodiment 19: described outer pin 2 has multi-turn, and the outer pin of described multi-turn 2 fronts form interior pin 4 by multilayer plating mode.
Embodiment 28: Wu Ji island multi-chip multi-circle pin passive device (You Neiji island)
Referring to Figure 46 (A) and Figure 46 (B), Figure 46 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 28.Figure 46 (B) is the vertical view of Figure 46 (A).Can be found out by Figure 46 (A) and Figure 46 (B), embodiment 28 is only with the difference of embodiment 27: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 29: Wu Ji island multi-chip multi-circle pin static release ring (Wu Neiji island)
Referring to Figure 47 (A) and Figure 47 (B), Figure 47 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 29.Figure 47 (B) is the vertical view of Figure 47 (A).Can be found out by Figure 47 (A) and Figure 47 (B), embodiment 29 is with the difference of embodiment 21: described outer pin 2 has multi-turn, and the outer pin of described multi-turn 2 fronts form interior pin 4 by multilayer plating mode.
Embodiment 30: Wu Ji island multi-chip multi-circle pin static release ring (You Neiji island)
Referring to Figure 48 (A) and Figure 48 (B), Figure 48 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 30.Figure 48 (B) is the vertical view of Figure 48 (A).Can be found out by Figure 48 (A) and Figure 48 (B), embodiment 30 is with the difference of embodiment 29: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 31: Wu Ji island multi-chip multi-circle pin static release ring passive device (Wu Neiji island)
Referring to Figure 49 (A) and Figure 49 (B), Figure 49 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 31.Figure 49 (B) is the vertical view of Figure 49 (A).Can be found out by Figure 49 (A) and Figure 49 (B), embodiment 31 is with the difference of embodiment 23: described outer pin 2 has multi-turn, and the outer pin of described multi-turn 2 fronts form interior pin 4 by multilayer plating mode.
Embodiment 32: Wu Ji island multi-chip multi-circle pin static release ring passive device (You Neiji island)
Referring to Figure 50 (A) and Figure 50 (B), Figure 50 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 32.Figure 50 (B) is the vertical view of Figure 50 (A).Can be found out by Figure 50 (A) and Figure 50 (B), embodiment 32 is with the difference of embodiment 31: described chip 5 bottoms form Nei Ji island 3 by multilayer plating mode, and now chip 5 is arranged at 3 fronts, Nei Ji island by conduction or non-conductive bonding material 8.
Embodiment 33: Dan Ji island individual pen pin (Wu Neiji island)
Referring to Figure 51 (A) and Figure 51 (B), Figure 51 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 33.Figure 51 (B) is the vertical view of Figure 51 (A).Can be found out by Figure 51 (A) and Figure 51 (B), the difference of embodiment 33 and embodiment 1 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 34: Dan Ji island individual pen pin (You Neiji island)
Referring to Figure 52 (A) and Figure 52 (B), Figure 52 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 34.Figure 52 (B) is the vertical view of Figure 52 (A).Can be found out by Figure 52 (A) and Figure 52 (B), the difference of embodiment 34 and embodiment 2 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 35: Dan Ji island individual pen pin passive device (Wu Neiji island)
Referring to Figure 53 (A) and Figure 53 (B), Figure 53 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 35.Figure 53 (B) is the vertical view of Figure 53 (A).Can be found out by Figure 53 (A) and Figure 53 (B), the difference of embodiment 35 and embodiment 3 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 36: Dan Ji island individual pen pin passive device (You Neiji island)
Referring to Figure 54 (A) and Figure 54 (B), Figure 54 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 36.Figure 54 (B) is the vertical view of Figure 54 (A).Can be found out by Figure 54 (A) and Figure 54 (B), the difference of embodiment 36 and embodiment 4 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 37: Dan Ji island individual pen pin static release ring (Wu Neiji island)
Referring to Figure 55 (A) and Figure 55 (B), Figure 55 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 37.Figure 55 (B) is the vertical view of Figure 55 (A).Can be found out by Figure 55 (A) and Figure 55 (B), the difference of embodiment 37 and embodiment 5 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 38: Dan Ji island individual pen pin static release ring (You Neiji island)
Referring to Figure 56 (A) and Figure 56 (B), Figure 56 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 38.Figure 56 (B) is the vertical view of Figure 56 (A).Can be found out by Figure 56 (A) and Figure 56 (B), the difference of embodiment 38 and embodiment 6 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 39: Dan Ji island individual pen pin static release ring passive device (Wu Neiji island)
Referring to Figure 57 (A) and Figure 57 (B), Figure 57 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 39.Figure 57 (B) is the vertical view of Figure 57 (A).Can be found out by Figure 57 (A) and Figure 57 (B), the difference of embodiment 39 and embodiment 7 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 40: Dan Ji island individual pen pin static release ring passive device (You Neiji island)
Referring to Figure 58 (A) and Figure 58 (B), Figure 58 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 40.Figure 58 (B) is the vertical view of Figure 58 (A).Can be found out by Figure 58 (A) and Figure 58 (B), the difference of embodiment 40 and embodiment 8 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 41: Dan Ji island multi-circle pin (Wu Neiji island)
Referring to Figure 59 (A) and Figure 59 (B), Figure 59 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 41.Figure 59 (B) is the vertical view of Figure 59 (A).Can be found out by Figure 59 (A) and Figure 59 (B), the difference of embodiment 41 and embodiment 9 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 42: Dan Ji island multi-circle pin (You Neiji island)
Referring to Figure 60 (A) and Figure 60 (B), Figure 60 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 42.Figure 60 (B) is the vertical view of Figure 60 (A).Can be found out by Figure 60 (A) and Figure 60 (B), the difference of embodiment 42 and embodiment 10 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 43: Dan Ji island multi-circle pin passive device (Wu Neiji island)
Referring to Figure 61 (A) and Figure 61 (B), Figure 61 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 43.Figure 61 (B) is the vertical view of Figure 61 (A).Can be found out by Figure 61 (A) and Figure 61 (B), the difference of embodiment 43 and embodiment 11 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 44: Dan Ji island multi-circle pin passive device (You Neiji island)
Referring to Figure 62 (A) and Figure 62 (B), Figure 62 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 44.Figure 62 (B) is the vertical view of Figure 62 (A).Can be found out by Figure 62 (A) and Figure 62 (B), the difference of embodiment 44 and embodiment 12 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 45: Dan Ji island multi-circle pin static release ring (Wu Neiji island)
Referring to Figure 63 (A) and Figure 63 (B), Figure 63 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 45.Figure 63 (B) is the vertical view of Figure 63 (A).Can be found out by Figure 63 (A) and Figure 63 (B), the difference of embodiment 45 and embodiment 13 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 46: Dan Ji island multi-circle pin static release ring (You Neiji island)
Referring to Figure 64 (A) and Figure 64 (B), Figure 64 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 46.Figure 64 (B) is the vertical view of Figure 64 (A).Can be found out by Figure 64 (A) and Figure 64 (B), the difference of embodiment 46 and embodiment 14 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 47: Dan Ji island multi-circle pin static release ring passive device (Wu Neiji island)
Referring to Figure 65 (A) and Figure 65 (B), Figure 65 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 47.Figure 65 (B) is the vertical view of Figure 65 (A).Can be found out by Figure 65 (A) and Figure 65 (B), the difference of embodiment 47 and embodiment 15 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 48: Dan Ji island multi-circle pin static release ring passive device (You Neiji island)
Referring to Figure 66 (A) and Figure 66 (B), Figure 66 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 48.Figure 66 (B) is the vertical view of Figure 66 (A).Can be found out by Figure 66 (A) and Figure 66 (B), the difference of embodiment 48 and embodiment 16 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has one, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 49: Duo Ji island individual pen pin (Wu Neiji island)
Referring to Figure 67 (A) and Figure 67 (B), Figure 67 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 49.Figure 67 (B) is the vertical view of Figure 67 (A).Can be found out by Figure 67 (A) and Figure 67 (B), the difference of embodiment 49 and embodiment 17 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 50: Duo Ji island individual pen pin (You Neiji island)
Referring to Figure 68 (A) and Figure 68 (B), Figure 68 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 50.Figure 68 (B) is the vertical view of Figure 68 (A).Can be found out by Figure 68 (A) and Figure 68 (B), the difference of embodiment 50 and embodiment 18 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 51: Duo Ji island individual pen pin passive device (Wu Neiji island)
Referring to Figure 69 (A) and Figure 69 (B), Figure 69 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 51.Figure 69 (B) is the vertical view of Figure 69 (A).Can be found out by Figure 69 (A) and Figure 69 (B), the difference of embodiment 51 and embodiment 19 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 52: Duo Ji island individual pen pin passive device (You Neiji island)
Referring to Figure 70 (A) and Figure 70 (B), Figure 70 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 52.Figure 70 (B) is the vertical view of Figure 70 (A).Can be found out by Figure 70 (A) and Figure 70 (B), the difference of embodiment 52 and embodiment 20 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 53: Duo Ji island individual pen pin static release ring (Wu Neiji island)
Referring to Figure 71 (A) and Figure 71 (B), Figure 71 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 53.Figure 71 (B) is the vertical view of Figure 71 (A).Can be found out by Figure 71 (A) and Figure 71 (B), the difference of embodiment 53 and embodiment 21 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 54: Duo Ji island individual pen pin static release ring (You Neiji island)
Referring to Figure 72 (A) and Figure 72 (B), Figure 72 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 54.Figure 72 (B) is the vertical view of Figure 72 (A).Can be found out by Figure 72 (A) and Figure 72 (B), the difference of embodiment 54 and embodiment 22 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 55: Duo Ji island individual pen pin static release ring passive device (Wu Neiji island)
Referring to Figure 73 (A) and Figure 73 (B), Figure 73 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 55.Figure 73 (B) is the vertical view of Figure 73 (A).Can be found out by Figure 73 (A) and Figure 73 (B), the difference of embodiment 55 and embodiment 23 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 56: Duo Ji island individual pen pin static release ring passive device (You Neiji island)
Referring to Figure 74 (A) and Figure 74 (B), Figure 74 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 56.Figure 74 (B) is the vertical view of Figure 74 (A).Can be found out by Figure 74 (A) and Figure 74 (B), the difference of embodiment 56 and embodiment 24 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 57: Duo Ji island multi-circle pin (Wu Neiji island)
Referring to Figure 75 (A) and Figure 75 (B), Figure 75 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 57.Figure 75 (B) is the vertical view of Figure 75 (A).Can be found out by Figure 75 (A) and Figure 75 (B), the difference of embodiment 57 and embodiment 25 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 58: Duo Ji island multi-circle pin (You Neiji island)
Referring to Figure 76 (A) and Figure 76 (B), Figure 76 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 58.Figure 76 (B) is the vertical view of Figure 76 (A).Can be found out by Figure 76 (A) and Figure 76 (B), the difference of embodiment 58 and embodiment 26 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 59: Duo Ji island multi-circle pin passive device (Wu Neiji island)
Referring to Figure 77 (A) and Figure 77 (B), Figure 77 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 59.Figure 77 (B) is the vertical view of Figure 77 (A).Can be found out by Figure 77 (A) and Figure 77 (B), the difference of embodiment 59 and embodiment 27 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 60: Duo Ji island multi-circle pin passive device (You Neiji island)
Referring to Figure 78 (A) and Figure 78 (B), Figure 78 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 60.Figure 78 (B) is the vertical view of Figure 78 (A).Can be found out by Figure 78 (A) and Figure 78 (B), the difference of embodiment 60 and embodiment 28 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 61: Duo Ji island multi-circle pin static release ring (Wu Neiji island)
Referring to Figure 79 (A) and Figure 79 (B), Figure 79 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 61.Figure 79 (B) is the vertical view of Figure 79 (A).Can be found out by Figure 79 (A) and Figure 79 (B), the difference of embodiment 61 and embodiment 29 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 62: Duo Ji island multi-circle pin static release ring (You Neiji island)
Referring to Figure 80 (A) and Figure 80 (B), Figure 80 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 62.Figure 80 (B) is the vertical view of Figure 80 (A).Can be found out by Figure 80 (A) and Figure 80 (B), the difference of embodiment 62 and embodiment 30 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.
Embodiment 63: Duo Ji island multi-circle pin static release ring passive device (Wu Neiji island)
Referring to Figure 81 (A) and Figure 81 (B), Figure 81 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 63.Figure 81 (B) is the vertical view of Figure 81 (A).Can be found out by Figure 81 (A) and Figure 81 (B), the difference of embodiment 63 and embodiment 31 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and now chip 5 is arranged at 1 front, Wai Ji island by conduction or non-conductive bonding material 8.
Embodiment 64: Duo Ji island multi-circle pin static release ring passive device (You Neiji island)
Referring to Figure 82 (A) and Figure 82 (B), Figure 82 (A) the present invention first plates the structural representation of carving afterwards four sides non-leaded package embodiment 64.Figure 82 (B) is the vertical view of Figure 82 (A).Can be found out by Figure 82 (A) and Figure 82 (B), the difference of embodiment 64 and embodiment 32 is: between described outer pin 2 and outer pin 2, be provided with Wai Ji island 1, described Wai Ji island 1 has multiple, and described Nei Ji island 3 is arranged at 1 front, Wai Ji island by multilayer plating mode.

Claims (9)

1. first plate a manufacture method of carving afterwards four sides non-leaded package, it is characterized in that described method comprises following processing step:
Step 1, get metal substrate
Step 2, pad pasting operation
Utilize film sticking equipment to stick respectively the photoresist film that can carry out exposure imaging at front and the back side of metal substrate,
Step 3, the positive photoresist film of removing part figure of metal substrate
The metal substrate front that utilizes exposure imaging equipment that step 2 is completed to pad pasting operation carry out figure exposure, develop and the photoresist film of removing part figure, the regional graphics of electroplating to expose the follow-up needs in metal substrate front,
Step 4, plating the first metal layer
To forming the first metal layer by multilayer plating mode in the positive graphics field of removing part photoresist film of metal substrate in step 3,
Step 5, metal substrate front and back side striping operation
The photoresist film of metal substrate front and back side remainder is removed, is formed interior pin at metal substrate vis-a-vis,
Step 6, load routing
The implantation of chip is carried out by conduction or non-conductive bonding material in metal substrate front between the interior pin forming in step 5, and carries out the operation of bonding metal wire between chip front side and interior pin front,
Step 7, seal
Utilize plastic packaging material injection device, the metal substrate that completes implanted chip and the operation of bonding metal wire sealed to plastic packaging material operation, and carry out the curing operation after plastic packaging material is sealed,
Step 8, pad pasting operation
Utilize film sticking equipment complete seal and the metal substrate of curing operation in front and the back side stick respectively the photoresist film that can carry out exposure imaging,
The photoresist film of part figure is removed at step 9, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 8 is completed to pad pasting operation carry out figure exposure, develop and the photoresist film of removal part figure, the regional graphics of electroplating to expose the follow-up needs in the metal substrate back side,
Step 10, plating the second metal level
In step 9, in the graphics field of metal substrate back side removal part photoresist film, electroplate the second metal level,
Step 11, metal substrate front and back side striping operation
The photoresist film of metal substrate front and back side remainder is removed,
Step 12: pad pasting operation
Utilize film sticking equipment to electroplate the second metal level and remove metal substrate after remaining photoresist film in front and the photoresist film that can carry out exposure imaging is sticked at the back side again completing,
The photoresist film of part figure is removed at step 13, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 12 is completed to pad pasting operation carry out figure exposure, develop and the photoresist film of removal part figure, to expose, the metal substrate back side is follow-up need to carry out etched regional graphics,
Step 14, the metal substrate back side are carried out total eclipse quarter or are etched partially operation
The metal substrate back side in step 13 is removed to the graphics field of part photoresist film and carries out total eclipse quarter simultaneously or etch partially, form the etching area of depression at the metal substrate back side, relatively form outer pin simultaneously,
Step 15, metal substrate front and back side striping operation
The photoresist film of metal substrate front and back side remainder is removed,
Step 10 six, metal substrate back etched area filling gap filler
In the etching area at the described metal substrate back side utilize fill equipment carry out filling gap filler, and carry out gap filler filling or seal after rear curing operation,
Step 10 seven, cutting finished product
Step 10 six is completed and sealed and the semi-finished product of curing operation carry out cutting operation, more than cuttings of plastic-sealed body module that script integrated and contain chip in array aggregate mode are independent, make first to plate to carve afterwards four sides non-leaded package finished product.
2. the manufacture method of carving afterwards four sides non-leaded package of first plating according to claim 1, is characterized in that: described chip back forms Nei Ji island by multilayer plating mode, and now chip is arranged at front, Nei Ji island by conduction or non-conductive bonding material.
3. the manufacture method of carving afterwards four sides non-leaded package of first plating according to claim 1, is characterized in that: between described interior pin and interior pin, have passive device by conduction or non-conductive bonding material cross-over connection.
4. the manufacture method of carving afterwards four sides non-leaded package of first plating according to claim 1, it is characterized in that: between described outer pin and outer pin, be provided with outer static release ring, described outer static release ring front forms interior static release ring by multilayer plating mode, between described interior static release ring front and chip front side, is connected by metal wire.
5. the manufacture method that first plating described in one of them carved four sides non-leaded package afterwards according to claim 1 ~ 4, is characterized in that: described chip has single, described outer pin has multi-turn.
6. the manufacture method that first plating described in one of them carved four sides non-leaded package afterwards according to claim 1 ~ 4, is characterized in that: described chip has multiple, described outer pin has individual pen.
7. the manufacture method that first plating described in one of them carved four sides non-leaded package afterwards according to claim 1 ~ 4, is characterized in that: described chip has multiple, described outer pin has multi-turn.
8. the manufacture method that first plating described in one of them carved four sides non-leaded package afterwards according to claim 1 ~ 4, it is characterized in that: between described outer pin and outer pin, be provided with one or more Wai Ji island, described chip is arranged at front, Wai Ji island by conduction or non-conductive bonding material.
9. the manufacture method of carving afterwards four sides non-leaded package of first plating according to claim 8, is characterized in that: front, described Wai Ji island forms Nei Ji island by multilayer plating mode, and chip is arranged at front, Nei Ji island by conduction or non-conductive bonding material.
CN201110389758.5A 2011-11-30 2011-11-30 Four-side pin-free packaging structure subjected to plating and etching sequentially and manufacturing method thereof Active CN102420206B (en)

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PCT/CN2012/000019 WO2013078750A1 (en) 2011-11-30 2012-01-06 First-plating-then-etching quad flat no-lead (qfn) packaging structures and method for manufacturing the same

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