CN1725460A - Plane button type packing technology of integrated circuit or discrete component and its packing structure - Google Patents

Plane button type packing technology of integrated circuit or discrete component and its packing structure Download PDF

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Publication number
CN1725460A
CN1725460A CNA2005100402617A CN200510040261A CN1725460A CN 1725460 A CN1725460 A CN 1725460A CN A2005100402617 A CNA2005100402617 A CN A2005100402617A CN 200510040261 A CN200510040261 A CN 200510040261A CN 1725460 A CN1725460 A CN 1725460A
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China
Prior art keywords
pin
plastic
chip
integrated circuit
metal
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CNA2005100402617A
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Chinese (zh)
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CN100369223C (en
Inventor
王新潮
于燮康
梁志忠
谢洁人
陶玉娟
葛海波
王达
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Changdian Technology Management Co ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CNB2005100402617A priority Critical patent/CN100369223C/en
Publication of CN1725460A publication Critical patent/CN1725460A/en
Priority to US11/910,893 priority patent/US20080285251A1/en
Priority to US11/910,885 priority patent/US20080315412A1/en
Priority to PCT/CN2006/000610 priority patent/WO2006122467A1/en
Priority to PCT/CN2006/000609 priority patent/WO2006105735A1/en
Priority to PCT/CN2006/000608 priority patent/WO2006105734A1/en
Priority to US11/910,878 priority patent/US20080258273A1/en
Priority to PCT/CN2006/000607 priority patent/WO2006105733A1/en
Application granted granted Critical
Publication of CN100369223C publication Critical patent/CN100369223C/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
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    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

This invention relates to a plane salient point encapsulation technology and its structure of IC or discrete components, among which, the technology includes: taking a base plate, dry-film layers are pasted to the front and back side of the base plate, removing part of the upper layer for the preparation of forming a basic island and pins, plating metal layers on the front, removing the rest dry film on the upper layer of the base plate, semi-etching it, removing the dry film on the back, implanting the chip, wiring, packaging with plastic capsule, pasting a dry film on the back of the base plate again, etching the dry film at the back and the rest of the metal of the semi-etched zone again so as to enable the back of the basic island and the pin projecting over the plastic capsule, removing the rest dry film, plating metal layers on the surface, pasting film on the front of the plastic capsule then cutting.

Description

Integrated circuit or discrete component flat bump package technics and encapsulating structure thereof
Technical field:
The present invention relates to a kind of integrated circuit or discrete component flat bump package technics and encapsulating structure thereof.Belong to integrated circuit or discrete component encapsulation technology field.
Background technology:
Traditional integrated circuit or discrete components ultra-thin non-pin packing technology and encapsulating structure thereof, its encapsulation pattern does not have the encapsulation of pin surface patch formula for the four sides, is listed as old formula aggregate through being cut into single unit.Its substrate pattern is the lead-in wire frame.It mainly has the following disadvantages:
1, lead frame: adopt the etched mode of penetration to make lead frame.
2, chemical glued membrane:, in encapsulation process, can cause flash because of adopting the penetration etching mode.
3, pollute: because adopt chemical adhesive tape, and the stick of glued membrane is easy to gasify out because of high temperature in various high-temperature technologies, and indirect pollution or cover the nip of chip and the surface in routing district usually causes the instability of routing ability.
4, wire ball bonding: because of adopting the penetration etching mode, the glued membrane that prevents that flash from using must be sticked in the back side.And in meetings such as the pressure parameter of bonding wire process setting, parameter of oscillation because glued membrane is soft, having part is absorbed, so actual force value is compared with set point with shake number and is had discrepancy, thereby causes the bonding wire point to get loose, and has had a strong impact on the reliability and the production stability of bonding wire.
5, reliability
Though A. pasted chemical glued membrane, in the high temperature encapsulation process, still had flash in various degree;
B. because worry to produce a large amount of operations of doing over again behind the flash, thus dare not be with the bigger pressure of sealing, and the result has caused that plastic packaging material is loose, water absorption rate increases, density reduces, and has seriously increased production cost and yield cost;
C. the part of the bottom output pin of four sides surface patch formula encapsulation pattern is with high or even depression with the plastic packaging surface, can produce the problem of loose contact because the sole coplanarity is bad in the surface mount process; Simultaneously,, have air in the surface mount operation and residue in the depression, after high temperature air expands, can cause bursting apart of contact because outer pin is depressed in the plane of plastic-sealed body;
D. because of output pin and plastic-sealed body in same plane or even depression, in the surface mount process, be easy to cause protruding pin surface tin cream to link and short circuit mutually;
E. the interior pin of routing adopts silver coating in principle, yet the joint capacity of silver layer and plastic packaging material is also bad, is easy to cause the problem of the delamination between plastic packaging material and silver layer;
F. electrically the outer pin of output adopts materials such as tin lead, pure tin in principle, and because of material oxidation easily itself, so can have influence on the ability of solderability, and the time of preserving is also shorter.
G. because the outer pin of electrical output pin adopts materials such as tin lead, pure tin in principle, and the fusing point of tin is relatively low, when cutting action, be easy to like this because cutter friction generates heat and cause the oxidation or even the fusing of tin, and then influenced the solderability of output pin and electrical transmission stability greatly.
6, thermal diffusivity, conductance: the lead frame of four sides surface patch formula encapsulation all adopts complete etched copper alloy, and its conductance/heat-sinking capability only has about 65%, if adopt the material of fine copper, its conductance/heat-sinking capability can reach more than 99% at least; But because of the intensity of fine copper too soft, so be easy to generate in process of production because of the too soft and yielding puzzlement of lead frame.
Summary of the invention:
The objective of the invention is to overcome above-mentioned deficiency, provide a kind of production smooth and easy, yield improves, and is with low cost, best in quality, reliability height, integrated circuit that conductance/thermal diffusivity is high or discrete component flat bump package technics and encapsulating structure thereof.
The object of the present invention is achieved like this: a kind of integrated circuit or discrete component flat bump package technics comprise following processing step:
---get a slice Metal Substrate sheet material,
---metal substrate just, back of the body two sides sticks photopolymer layer separately protecting follow-up etch process operation,
---the part dry film on metal substrate upper strata is got rid of, prepare to be formed Ji Dao and pin on metal substrate, purpose is to expose the follow-up zone that needs metal cladding, substrate upper strata,
---the Ji Dao that prepare to form on metal substrate and the front of pin field plate metal level, when being beneficial to follow-up bonding wire between metal wire and chip region and the routing Nei Jiao district with tightr, firm engaging, the conjugation between increase and plastic packaging material cake simultaneously,
---remove the dry film of metal substrate upper strata remainder, exposing the follow-up required zone that etches partially technology,
---the zone of removing dry film in the last process is etched partially, on metal substrate, forms the partially etching area of depression, form Ji Dao and pin simultaneously relatively,
---remove the photopolymer layer of substrate back,
---on the front metal layer of the basic island of metal substrate, carry out the implantation of chip, make the old formula aggregate of the row semi-finished product of integrated circuit or discrete component,
---the semi-finished product of finishing chip implantation operation are played the metal wire operation,
---will be the routing semi-finished product front of finishing seal the plastic-sealed body operation, and carry out curing operation after the plastic encapsulation according to the characteristic of plastic packaging material, with protection metal wire, chip and in the safety of pin,
---will finish the semi-finished product of plastic encapsulation and back curing operation, carry out the front print operation, in order to the function and the characteristic of identification chip,
---stick photopolymer layer once more at the metal substrate back side,
---remove the dry film at the metal substrate partially etching area back side, exposing the required zone of subsequent etch,
---is that the metal of partially etching area remaining part carries out etching once more at the metal substrate back side to the zone that is not covered by dry film, thereby makes the back side of Ji Dao and pin protrude from plastic-sealed body,
---the dry film of removing the substrate back remainder is beneficial to follow-up electroplating technology operation,
---plate metal level on the Ji Dao and the pin surface of protruding the plastic-sealed body outside, make the exposed surface of part outside of Ji Dao and pin that the layer of metal layer all be arranged,
---glued membrane is sticked in the plastic-sealed body front, prepares to carry out follow-up plastic-sealed body cutting operation,
---the semi-finished product that stick glued membrane are carried out cutting operation, make script independent with more than of the chips that array formula aggregate mode connects together,
---the product utilization that will finish cutting picks and places plastic-sealed body one by one the sucking-off glued membrane of conversion equipment with single integrated circuit or discrete component.
Integrated circuit of the present invention or discrete component flat bump package technics, the implantation of chip can be directly carried out in the implantation of described chip on the front metal layer of basic island, also can on the front metal layer of basic island, be coated with elargol earlier, on the elargol of just finishing the elargol coating, carry out the implantation of chip again, carry out the operation of solidifying behind the elargol after finishing again.
Integrated circuit of the present invention or discrete component flat bump package technics, described Ji Dao and pin front metal layer are gold or silver, copper, nickel, nickel palladium.
Integrated circuit of the present invention or discrete component flat bump package technics, described metal wire are gold thread or silver-colored line, copper cash, aluminum steel.
Integrated circuit of the present invention or discrete component flat bump package technics, the metal level on described Ji Dao that protrudes from the plastic-sealed body outside and pin surface is gold or silver, copper, tin, nickel, nickel palladium etc.
Integrated circuit of the present invention or discrete component flat bump formula encapsulating structure, comprise the chip bearing base, pin carrying base in the routing, chip, metal wire and plastic-sealed body, it is characterized in that: described chip bearing base comprises intermediate base island and basic island front metal layer, pin and pin front metal layer in the middle of pin carrying base comprises in the described routing, implant chip on the front metal layer of chip bearing base, chip front side is connected with the metal wire two ends respectively with pin front metal layer makes the encapsulating structure semi-finished product, seal with plastic-sealed body encapsulating structure semi-finished product front and neighboring, and the back side that makes Ji Dao and pin protrudes from the plastic-sealed body surface, and the surface, basic island and the pin surface of protruding plastic-sealed body are coated with metal level.
Integrated circuit of the present invention or discrete component flat bump package technics and encapsulating structure thereof, its encapsulation pattern adopts the encapsulation of plane formula salient point, is listed as old formula aggregate through being cut into single unit.Its substrate pattern is for first is etched with and exposes needed Ji Dao and pin relatively at substrate.Do not have the encapsulation of pin surface patch formula with the four sides and compare, the present invention has following advantage:
1, lead frame: adopt the mode of etching partially to make lead frame.
2, chemical glued membrane: because of employing etches partially mode, thus in encapsulation process, do not have the generation of flash fully, and need not to stick the glued membrane that prevents that flash from using fully.
3, pollute: need not to use any chemical glued membrane but still can prevent the generation of flash in the encapsulation process, so do not have pollution problems fully, produces smooth and easy, the yield raising, with low cost.
4, wire bonding wire: the solder joint of exporting in the plane formula salient point encapsulating structure protrudes from the plastic-sealed body surface, and twice etching guaranteed the absolute coplanarity between solder joint in addition.Single-point like this independently welding manner can be kept at present the generally weldering sexuality of chip, does not worry also whether surface mount can be unstable, and it is more stable that quality encapsulates pattern than traditional four sides surface patch formula.
5, reliability
A. can not produce excessive glue fully;
B. the mode that etches partially because of employing produces so adopt big again pressure also not have flash in encapsulation process, and every reliability is ensured, and production is more smooth, and cost also can descend thereupon;
The part of its bottom output pin of C planar salient point type encapsulation pattern is to protrude plastic-sealed body; Simultaneously, because the mode that etches partially, so can guarantee the absolute coplane of sole;
D. the output pin because of the plastic-sealed body bottom is a size of protruding plastic-sealed body 0.05 ± 0.025mm, and its tin cream residual volume can be not easy to produce the tin cream short circuit attached to around the protruding pin, and then has increased the solder attachment ability of protruding pin solder joint;
E. the interior pin in routing district can not adopt silver coating and uses Gold plated Layer, nickel coating or nickel plating palladium floor instead, because plastic packaging material is well more a lot of than silver with the binding ability of gold, nickel or nickel palladium, and then is not easy to cause the puzzlement of layering;
When F. electrically the outer pin of output adopts Gold plated Layer, nickel dam or nickel palladium layer, because this material belongs to inert material, can oxidation because of gas in the environment or temperature, so the time of preserving is very long;
When G. electrically the outer pin of output adopts Gold plated Layer, nickel dam or nickel palladium layer, because this material all belongs to the inert metal material, fusing point is higher, so can not cause the oxidation or even the fusing of solder joint because of friction generates heat when cutting, thereby guaranteed the solderability of output pin and the stability of electrically transmitting, and product quality is able to good assurance.
6, thermal diffusivity, conductance: can adopt the technology of fine copper, because the lead frame of plane formula salient point encapsulation is the mode that adopts substrate to etch partially, so the intensity of its lead frame and structure exceed one times at least with respect to the etched lead frame of penetration; Simultaneously, conductance/thermal diffusivity also promotes more than 30% at least, thereby the electrical transmission rate of product is also a lot of fast.
Description of drawings:
Fig. 1～21 are respectively integrated circuit of the present invention or each operation schematic diagram of discrete component flat bump package technics.
Figure 22 is integrated circuit of the present invention or discrete component flat bump formula encapsulating structure schematic diagram.
Embodiment:
Integrated circuit of the present invention or discrete component flat bump package technics are made up of following operation:
1) substrate---referring to Fig. 1, get the suitable Metal Substrate sheet material 1 of a slice thickness.The material of metal substrate 1 can be carried out conversion according to the function and the characteristic of chip, for example: dilval, fine copper or copper alloy etc.
2) paste dry film---referring to Fig. 2, stick photopolymer layer 2,3 separately at the tow sides of metal substrate, to protect follow-up etch process operation.
3) remove the top section dry film---referring to Fig. 3, metal substrate 1 top section dry film is got rid of, prepared to form Ji Dao and pin on metal substrate 1, purpose is to expose the follow-up zone that needs metal cladding, substrate upper strata.
4) substrate top metallization layer---referring to Fig. 4, non-dry film zone on the substrate upper strata plates required metal level 4.1,4.2, for example gold, silver, copper, nickel, nickel palladium etc., can be tightr, firm between metal wire and chip region and the routing Nei Jiao district during in order to follow-up bonding wire engage, increase simultaneously and the plastic packaging material cake between conjugation.
5) remove the remaining dry film in upper strata---referring to Fig. 5, remove the remaining dry film 3 in metal substrate upper strata.
6) the substrate upper strata etches partially---and referring to Fig. 6, the zone of removing dry film in the last process is etched partially, on metal substrate 1, form the partially etching area 1.3 of depression, form basic island 1.1 and pin 1.2 simultaneously relatively.
7) dry film of removal substrate back---referring to Fig. 7, remove the photopolymer layer 3 of substrate back.
8) elargol coating---referring to Fig. 8, on the metal level 2 of chip region, coat elargol 5 (conducting resinl/non-conductive adhesive).If adopt the mode of eutectic, then need not to be coated with elargol.
9) paster operation---referring to Fig. 9, carry out the implantation of chip 6, carry out the operation of solidifying behind the elargol according to the characteristic of elargol again after finishing, make the old formula aggregate of the row semi-finished product of integrated circuit or discrete component at the chip area of just finishing the elargol coating.
10) metal wire ball bonding---referring to Figure 10, according to product performance, the semi-finished product of finishing chip implantation operation are played metal wire 7 operations, metal wire rod has gold thread, silver-colored line, copper cash or aluminum steel.
11) seal operation---referring to Figure 11, plastic-sealed body 8 operations are sealed in the semi-finished product front that routing is finished, and carry out curing operation after the plastic encapsulation according to the characteristic of plastic packaging material, with protection metal wire, chip and in the safety of pin.
12) print job---referring to Figure 12,, carry out front print 9 operations, in order to the function and the characteristic of identification chip with finishing the semi-finished product of plastic encapsulation and back curing operation.
13) paste dry film once more at substrate back---referring to Figure 13, stick dry film 10 once more at substrate 1 back side.
14) remove the unwanted dry film in the back side---referring to Figure 14, removing substrate back is the dry film at partially etching area 1.3 back sides, to expose the required zone of subsequent etch.
15) substrate back etching---referring to Figure 15, the zone that the last process metacoxal plate back side is not covered by dry film is that partially etching area remaining metal 1.4 in substrate upper strata carries out the etch process operation once more, so that plastic-sealed body 8 is protruded at the back side of Ji Dao and pin.
16) remove the remaining dry film of substrate back---referring to Figure 16, remove the remaining dry film 10 in substrate 1 back side and be beneficial to follow-up electroplating technology operation.
17) electroplating activity---referring to Figure 17, plate metal level 11.1,11.2 on the basic island 1.1 and pin 1.2 surfaces of protruding plastic-sealed body 8 outsides, for example gold, silver, copper, tin, nickel, nickel palladium layer make the exposed surface of part outside of Ji Dao and pin that one deck inert metal layer all be arranged.
18) plastic-sealed body sticking operation---referring to Figure 18, after the operation of finishing function pin plating metal on surface layer, again glued membrane 12 is sticked in half-finished plastic-sealed body front, prepare to carry out follow-up colloid cutting operation.
19) plastic-sealed body cutting---referring to Figure 19, utilize cutting machine that the semi-finished product that stick glued membrane are carried out cutting operation, make script independent with more than of the chips that array formula aggregate mode connects together.
20) plastic-sealed body separates with adhesive film---and referring to Figure 20, the product utilization of finishing cutting is picked and placeed plastic-sealed body one by one the sucking-off glued membrane of conversion equipment with single integrated circuit or discrete component, and be placed in plastics carrier, plastics carrying sebific duct, the braid.
21) end product---referring to Figure 21,13 is the chip rest area among the figure, and 14 is the function pin.
Referring to Figure 22, integrated circuit or discrete component flat bump formula encapsulating structure mainly are made up of pin carrying base 16, chip 6, metal wire 7 and plastic-sealed body 8 in chip bearing base 15, the routing.
Described chip bearing base 15 comprises intermediate base island 1.1 and basic island front metal layer 4.1.
Pin 1.2 and pin front metal layer 4.2 in the middle of pin carrying base 16 comprises in the described routing.
Coating elargol 5 on the front metal layer 4.1 of chip bearing base 15 is implanted chip 6 on the elargol 5.
6 positive connections with metal wire 7 two ends respectively with pin 1.2 front metal layers 4.2 of chip are made the encapsulating structure semi-finished product.
Seal with plastic-sealed body 8 encapsulating structure semi-finished product front and neighboring, and make the back side of basic island 1.1 and pin 1.2 protrude from plastic-sealed body 8 surfaces.
The surface, basic island of protruding plastic-sealed body 8 is coated with metal level 11.1, and the pin surface of protruding plastic-sealed body 8 is coated with metal level 11.2.

Claims (9)

1, a kind of integrated circuit or discrete component flat bump package technics is characterized in that it comprises following processing step:
---get a slice Metal Substrate sheet material (1),
---metal substrate (1) just, the back of the body two sides stick photopolymer layer (2,3) separately,
---the part dry film on metal substrate (1) upper strata is got rid of, is gone up at metal substrate (1) and prepare to form Ji Dao and pin,
---upward prepare the Ji Dao of formation and the front of pin field at metal substrate (1) and plate metal level (4.1,4.2),
---remove the dry film of metal substrate (1) upper strata remainder,
---the zone of removing dry film in the last process is etched partially, goes up the partially etching area (1.3) that forms depression, form Ji Dao (1.1) and pin (1.2) simultaneously relatively at metal substrate (1),
---remove the photopolymer layer (3) of substrate back,
---on Ji Dao (1.1) the front metal layer (4.1) of metal substrate (1), carry out the implantation of chip (6), make the old formula aggregate of the row semi-finished product of integrated circuit or discrete component,
---the semi-finished product that will finish chip implantation operation are played metal wire (7) operation,
---will be the routing semi-finished product front of finishing seal plastic-sealed body (8) operation, and carry out curing operation after the plastic encapsulation,
---will finish the semi-finished product of plastic encapsulation and back curing operation, carry out front print (9) operation,
---stick photopolymer layer (10) once more at metal substrate (1) back side,
---remove the dry film at partially etching area (1.3) back side of metal substrate (1),
---is that the metal (1.4) of partially etching area (1.3) remaining part carries out etching once more at the back side of metal substrate (1) to the zone that is not covered by dry film, thereby makes the back side of Ji Dao (1.1) and pin (1.2) protrude from plastic-sealed body (8),
---remove the dry film of metal substrate (1) back side remainder,
---plate metal level (11.1,11.2) on the Ji Dao (1.1) and pin (1.2) surface of protruding plastic-sealed body (8) outside,
---glued membrane (12) is sticked in plastic-sealed body (9) front,
---the semi-finished product that stick glued membrane are carried out cutting operation, make script independent with more than of the chips that array formula aggregate mode connects together,
---the product utilization that will finish cutting picks and places the plastic-sealed body sucking-off glued membrane of conversion equipment with single integrated circuit or discrete component.
2, a kind of integrated circuit according to claim 1 or discrete component flat bump package technics is characterized in that directly carrying out the implantation of chip (6) on Ji Dao (1.1) front metal layer (4.1).
3, a kind of integrated circuit according to claim 1 or discrete component flat bump package technics, it is characterized in that on Ji Dao (1.1) front metal layer (4.1), being coated with earlier elargol (5), on the elargol (5) of just finishing the elargol coating, carry out the implantation of chip (6) again, carry out the operation of solidifying behind the elargol after finishing again.
4,, it is characterized in that Ji Dao (1.1) and pin (1.2) front metal layer (4.1,4.2) are golden or silver, copper, nickel, nickel palladium according to claim 1 or 2,3 described a kind of integrated circuit or discrete component flat bump package technics.
5,, it is characterized in that metal wire (7) is gold thread or silver-colored line, copper cash, aluminum steel according to claim 1 or 2,3 described a kind of integrated circuit or discrete component flat bump package technics.
6,, it is characterized in that the metal level (11.1,11.2) that protrudes outside Ji Dao (1.1) of plastic-sealed body (8) and pin (1.2) surface is golden or silver, copper, tin, nickel, nickel palladium layer according to claim 1 or 2,3 described a kind of integrated circuit or discrete component flat bump package technics.
7, a kind of integrated circuit or discrete component flat bump formula encapsulating structure, comprise chip bearing base (15), pin carrying base (16) in the routing, chip (6), metal wire (7) and plastic-sealed body (8), it is characterized in that: described chip bearing base (15) comprises intermediate base island (1.1) and basic island front metal layer (4.1), pin (1.2) and pin front metal layer (4.2) in the middle of pin carrying base (16) comprises in the described routing, the front metal layer (4.1) of chip bearing base (15) is gone up and is implanted chip (6), the positive connection with metal wire (7) two ends respectively with pin (1.2) front metal layer (4.2) of chip (6) made the encapsulating structure semi-finished product, seal with plastic-sealed body (8) encapsulating structure semi-finished product front and neighboring, and the back side that makes Ji Dao (1.1) and pin (1.2) protrudes from plastic-sealed body (8) surface, Ji Dao (1.1) surface of protruding plastic-sealed body (8) is coated with metal level (11.1), and pin (1.2) surface of protruding plastic-sealed body (8) is coated with metal level (11.2).
8, a kind of integrated circuit according to claim 7 or discrete component flat bump formula encapsulating structure is characterized in that directly carrying out on chip bearing base (15) the front metal layer (4.1) implantation of chip (6).
9, a kind of integrated circuit according to claim 7 or discrete component flat bump formula encapsulating structure is characterized in that chip bearing base (15) front metal layer (4.1) upward is coated with one deck elargol layer (5) earlier, go up at elargol layer (5) and implant chip (6).
CNB2005100402617A 2005-04-07 2005-05-27 Plane button type packing technology of integrated circuit or discrete component and its packing structure Active CN100369223C (en)

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Application Number Priority Date Filing Date Title
CNB2005100402617A CN100369223C (en) 2005-05-27 2005-05-27 Plane button type packing technology of integrated circuit or discrete component and its packing structure
PCT/CN2006/000609 WO2006105735A1 (en) 2005-04-07 2006-04-06 Package structure with flat bumps for integrate circuit or discrete device and method of manufacture the same
US11/910,885 US20080315412A1 (en) 2005-04-07 2006-04-06 Package Structure with Flat Bumps for Integrate Circuit or Discrete Device and Method of Manufacture the Same
PCT/CN2006/000610 WO2006122467A1 (en) 2005-04-07 2006-04-06 A packaging substrate with flat bumps for ic or discrete device and method of manufacturing the same
US11/910,893 US20080285251A1 (en) 2005-04-07 2006-04-06 Packaging Substrate with Flat Bumps for Electronic Devices and Method of Manufacturing the Same
PCT/CN2006/000608 WO2006105734A1 (en) 2005-04-07 2006-04-06 A packaging substrate with flat bumps for electronic devices and method of manufacturing the same
US11/910,878 US20080258273A1 (en) 2005-04-07 2006-04-06 Package Structure With Flat Bumps For Electronic Device and Method of Manufacture the Same
PCT/CN2006/000607 WO2006105733A1 (en) 2005-04-07 2006-04-06 Package structure with flat bumps for electronic device and method of manufacture the same

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