CN106158742B - Plane bump type metal-free cutting packaging process and packaging structure thereof - Google Patents

Plane bump type metal-free cutting packaging process and packaging structure thereof Download PDF

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Publication number
CN106158742B
CN106158742B CN201610763616.3A CN201610763616A CN106158742B CN 106158742 B CN106158742 B CN 106158742B CN 201610763616 A CN201610763616 A CN 201610763616A CN 106158742 B CN106158742 B CN 106158742B
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metal
pin
chip
dry film
metal substrate
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CN106158742A (en
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吴奇斌
吕磊
吴莹莹
吴涛
邱冬冬
李邦杰
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Changjiang Electronics Technology Chuzhou Co Ltd
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Changjiang Electronics Technology Chuzhou Co Ltd
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    • HELECTRICITY
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    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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    • H01L2224/9222Sequential connecting processes
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Abstract

The invention discloses a plane bump type metal-free cutting packaging process and a packaging structure thereof, belonging to the field of semiconductor manufacturing. The method comprises the following steps: 1) taking a metal substrate; 2) respectively sticking dry film layers on the front surface and the back surface of the metal substrate; 3) removing part of the dry film layer; 4) plating a front metal layer on the front of a base island, a connecting rib and a pin area to be formed on a metal substrate, and plating silver on the connecting rib; 5) removing the dry film layer and leaking out of the etching area; 6) half etching, namely forming a sunken half etching area on the metal substrate to form a base island and a pin; 7) chip implantation; 8) routing; 9) encapsulating and post-curing; 10) sticking a dry film layer again; 11) removing the gold dry film layer; 12) performing full etching on the region which is not covered by the dry film on the back surface of the metal substrate to enable the base island and the pins to protrude out of the surface of the plastic package; 13) removing the dry film layer; 14) forming a pin metal layer; 15) and (6) cutting. It can realize the advantages of high reliability and low cutter abrasion.

Description

Plane bump type metal-free cutting packaging process and packaging structure thereof
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a planar bump type metal-free cutting packaging process and a packaging structure thereof.
Background
For decades, the technology of packaging integrated circuits has been developed following the development of integrated circuits, and people have sought the best balance between small size and high performance. From the DIP plug-in package of the 70 s to the SOP surface mount package and then to the QFP flat type patch package of the 80 s, the package volume of the chip is developing towards miniaturization all the time, and the structural performance is continuously improved. In the past 90 s, the quad flat no-lead package (QFN) appeared, and output pins around the package were originally stored at the bottom of the package on the basis of QFP, so that the occupied space during the chip mounting operation was greatly reduced. However, QFN often has the problems of unstable inner pin solder joint, material overflow, high rework frequency, low packaging yield, etc. FBP plane bump packages are new types of packages that have been independently developed to improve many problems in QFN production.
Fbp (flat Bump package) is the latest research result of long electrical technology. In terms of volume, the FBP can be smaller and thinner than the QFN, and really meets the market demand of being light, thin and small. The stable and reliable performance, the outstanding low impedance, high heat dissipation and superconducting performance simultaneously meet the current IC design trend. The unique bump pin design of FBP also makes soldering simpler and more robust. However, in the current discrete device products (DFN \ QFN \ FBP), a resin knife is used for cutting, and a large amount of metal materials are required to be cut off when the products are separated in the cutting process. It mainly has the following disadvantages:
a. the product is subjected to large stress, so that the product is layered, and the reliability of the product is influenced;
b. due to the fact that a large amount of metal is cut off through cutting, the cutter is abraded quickly, and the cutter replacement frequency is high.
Chinese patent application No. 200510040262.1, published 2006, 2/1, discloses a planar bump package process for integrated circuits or discrete components, comprising the following process steps: taking a metal base plate, respectively pasting dry film layers on two sides of a substrate, correspondingly removing partial dry films on the two sides of the substrate, preparing to form a base island and a pin on the substrate, plating metal layers on the two sides of the area for forming the base island and the pin on the substrate, removing the residual dry film on the front side of the substrate, performing half etching, forming a sunken half etching area on the substrate, forming the base island and the pin in a simultaneous and opposite mode, removing the residual dry film on the back side of the substrate, implanting a chip into the metal layer on the front side of the base island, punching a metal wire, encapsulating a plastic package body, printing the front side, etching the residual metal on the half etching area again, pasting a glue film on the front side of the plastic package body, and cutting. The invention has the advantages of strong welding performance, excellent quality, lower cost, smooth production, stronger applicability, flexible arrangement of multiple chips and no occurrence of various troubles of plastic packaging material permeation. However, in the production process, the cutting abrasion consumption is large, and the product is greatly stressed in the cutting process, so that the reliability of the product is influenced.
Disclosure of Invention
1. Technical problem to be solved
The invention provides a plane bump type metal-free cutting packaging process and a packaging structure thereof, aiming at the problems that products are easy to layer, poor in reliability and fast in cutter abrasion in the prior art. It can realize the advantages of high reliability and low cutter abrasion.
2. Technical scheme
The purpose of the invention is realized by the following technical scheme.
1. A flat bump type metal-free cutting packaging process comprises the following steps:
1) taking a metal substrate;
2) respectively sticking dry film layers on the front surface and the back surface of the metal substrate to protect the subsequent etching process operation;
3) removing part of the dry film layer on the front surface of the metal substrate, and preparing to form a base island, connecting ribs and pins on the metal substrate;
4) plating a front metal layer on the front of a base island, a connecting rib and a pin area to be formed on a metal substrate so as to be beneficial to the tight combination of a metal wire, a chip area and pins in a routing during subsequent wire bonding, and plating silver at the connecting rib for plating tin on a subsequent electroplating conductive pin;
5) removing the residual dry film layer on the upper layer of the metal substrate to leak out of the etching area;
6) performing half etching on the dry film region removed in the step 5, forming a sunken half-etched region on the metal substrate, and simultaneously forming a base island and a pin relatively;
7) chip implantation is carried out on the metal layer on the front surface of the base island of the metal substrate to form an array type aggregate semi-finished product of an integrated circuit or discrete components;
8) routing the semi-finished product which has finished the chip implantation operation;
9) encapsulating and post-curing;
10) sticking a dry film layer on the back of the metal substrate again;
11) removing the dry film layer on the back of the semi-etched region of the metal substrate to expose the subsequent region to be etched;
12) performing full etching on the region which is not covered by the dry film on the back surface of the metal substrate to enable the base island and the pins to protrude out of the surface of the plastic package;
13) removing the residual dry film layer on the back of the metal substrate to facilitate the subsequent electroplating process operation;
14) electroplating metal on the protruded base island and the pins to form a pin metal layer;
15) and (4) attaching a UV film to the front surface of the plastic packaging body, then performing cutting operation, and separating products.
Further, it is characterized in that: and 7) implanting the chip on the metal layer on the front surface of the base island by using eutectic welding mounting.
Furthermore, gold, silver, copper, nickel or nickel-palladium metal is used for the front metal layers of the base island and the pin.
Furthermore, the semi-finished product of the chip implantation operation is subjected to routing, and the metal wire of the routing is a gold wire, a silver wire, a copper wire or an aluminum wire.
Furthermore, step 4 is to plate silver on the connecting rib, and step 14 is to plate metallic tin on the outer leakage pin of the plastic package body on the basis of step 4 to form a pin metal layer.
A plane bump type metal-free cutting packaging structure comprises a chip bearing base, a routing inner foot bearing base, a chip, a metal wire and a plastic package body, wherein the chip bearing base comprises an island and a front metal layer of the island, the routing inner foot bearing base comprises a pin and a front metal layer of the pin, a metal layer is arranged on a connecting rib, the chip is implanted on the front metal layer of the chip bearing base, the front metal layer of the chip and the front metal layer of the pin are respectively connected with two ends of the metal wire to form a semi-finished packaging structure, the front surface and the peripheral edge of the semi-finished packaging structure are packaged by the plastic package body, the back surfaces of the island and the pin protrude out of the surface of the plastic package body, and the base island and the pin surface protruding out of the plastic package body are plated with the.
Furthermore, the pin metal layer is a tin layer, and the connecting ribs of the chip are silver layers. Only tin and silver need be cut during cutting, and because tin and silver are soft, cutting stress is small, cutting abrasion is small, and chip reliability is improved.
Furthermore, the front metal layers of the base island and the pin are gold, silver, copper, nickel or nickel palladium. The plastic packaging material has good binding capacity with gold, silver, copper, nickel or nickel palladium, and is not easy to cause layering.
Furthermore, the metal wire for wire bonding connection between the chip and the pin is a gold wire, a silver wire, a copper wire or an aluminum wire. The material is inert material, and has long storage time, good conductivity and heat dissipation.
3. Advantageous effects
Compared with the prior art, the invention has the advantages that:
(1) by using the scheme, all copper base materials of the product are completely corroded through the working procedures 10, 11, 12 and 13, the metal-free cutting process belongs to the metal-free cutting process in the working procedure 15, the metal base between the chips is directly removed firstly, when the chips are cut and separated, the cutting knife only needs to cut the plastic packaging material, the stress borne by the product in the cutting process is reduced by more than 90%, the product is prevented from layering, and the reliability of the product is improved;
(2) only tin and silver are needed to be cut during cutting, and due to the fact that the tin and the silver are soft, cutting stress is small, cutting abrasion is small, chip reliability is improved, and abrasion of a cutting tool can be reduced;
(3) the original resin cutting knife can be changed into a metal cutting knife for cutting, the surface of a product is smoother in the cutting process, a cutting knife with larger meshes can be adopted for reducing the abrasion of the cutting knife, the larger the mesh of the cutting knife is, the smaller the chip is, the smoother the surface of the product is in the cutting process, the smaller the chip is, the more attractive the appearance of the product is, and the more attractive the appearance of the product is;
(4) the eutectic welding mounting is used, so that the chip mounting is quicker and quicker, the efficiency is high, and the reliability is good;
(5) plating a front metal layer on the front of a base island, a connecting rib and a pin area to be formed on a metal substrate so as to be beneficial to the tight combination of a metal wire with a chip area and pins in a routing during subsequent wire bonding, and plating silver at the connecting rib for plating tin on a subsequent electroplating conductive pin, so that the process is simple and the cost is reduced;
(6) the metal layers on the front sides of the base island and the pins are gold, silver, copper, nickel or nickel-palladium, and the plastic packaging material has good binding capacity with the gold, silver, copper, nickel or nickel-palladium and is not easy to cause layering;
(7) the metal wire for routing connection of the chip and the pins is a gold wire, a silver wire, a copper wire or an aluminum wire, and the metal wire is made of an inert material, so that the storage time is long, and the electric conductivity and the heat dissipation performance are good.
Drawings
FIGS. 1-9 are schematic diagrams of the chip structure after each step of steps 1-9 in the present embodiment, respectively;
FIG. 10 is a schematic diagram of a chip structure after steps of the present embodiment 10, 11, 12, and 13;
FIG. 11 is a schematic diagram of a chip structure after the process of this embodiment 14;
FIG. 12 is a schematic diagram of a chip structure after the process of this embodiment 15;
FIG. 13 is a diagram illustrating a chip structure after step 6 of the prior art;
FIG. 14 is a diagram illustrating a chip structure after steps 10, 11, 12, and 13 of the prior art;
FIG. 15 is a diagram illustrating a chip structure after step 14 of the prior art;
fig. 16 is a schematic diagram of a chip structure after step 15 in the prior art.
The reference numbers in the figures illustrate:
1. a metal substrate; 2. a dry film layer; 3. a front metal layer; 4. an etching region; 5. a pin; 6. a base island; 7. a chip; 8. molding the body; 9. a pin metal layer.
Detailed Description
The invention is described in detail below with reference to the drawings and specific examples.
Example 1
Referring to fig. 1-12, a flat bump type metal-free dicing and packaging process includes the following steps:
1) taking a metal substrate 1;
2) respectively sticking dry film layers 2 on the front surface and the back surface of the metal substrate 1 to protect the subsequent etching process operation;
3) removing part of the dry film layer 2 on the front surface of the metal substrate 1, and preparing to form a base island 6, connecting ribs and pins 5 on the metal substrate 1;
4) the front metal layer 3 is plated on the front surface of the base island 6, the connecting rib and the lead 5 region to be formed on the metal substrate 1, and gold, silver, copper, nickel or nickel-palladium metal is used for the base island 6 and the front metal layer 3 of the lead 5. The metal wire is tightly combined with the chip area and the inner pin of the routing in the subsequent wire bonding process, and the connecting rib is plated with silver for plating tin on the subsequent electroplating conductive pin;
5) removing the residual dry film layer 2 on the upper layer of the metal substrate 1 and leaking out of the etching area 4;
6) performing half etching on the dry film region removed in the step 5, forming a sunken half-etched region on the metal substrate 1, and simultaneously forming a base island 6 and a pin 5 oppositely;
7) implanting a chip 7 on the metal layer 3 on the front surface of the base island 6 of the metal substrate 1 to form an array type aggregate semi-finished product of an integrated circuit or a discrete component; the chip 7 is implanted using eutectic solder mounting.
8) Routing the semi-finished product which has finished the chip 7 implantation operation; the metal wire of the routing is a gold wire, a silver wire, a copper wire or an aluminum wire
9) Encapsulating and post-curing;
10) sticking a dry film layer 2 on the back 1 of the metal substrate again;
11) removing the dry film layer 2 on the back of the half-etched area of the metal substrate 1 to expose the area needing etching subsequently;
12) the back of the metal substrate 1 is fully etched in the area which is not covered by the dry film, so that the base island 6 and the pins 5 protrude out of the surface of the plastic package body 8;
13) removing the residual dry film layer 2 on the back surface of the metal substrate 1 to facilitate the subsequent electroplating process operation;
14) electroplating metal on the protruded base island 6 and the pins (5) to form a pin metal layer 9; and plating metal tin on the outer leakage pin of the plastic package body 8 by silver plating at the connecting rib to form a pin metal layer 9.
15) And (4) sticking a UV film on the front surface of the plastic packaging body 8, then performing cutting operation, and separating products.
Referring to fig. 13, in the prior art, only the pin and pad electroplating is performed in step 6; as shown in fig. 14, the prior art 10-13 steps originally etched only part of the metal, and this scheme removes all the unwanted copper material. Referring to fig. 15, step 14 in the prior art is to electroplate pins and base islands of a product by using a metal substrate as a connecting rib. A chip as shown in fig. 16 is formed. According to the scheme, all copper base materials of the product are completely corroded through the working procedures 10, 11, 12 and 13, the metal-free cutting process is adopted in the working procedure 15, the metal base between chips is directly removed, when the chips are cut and separated, a cutting knife only needs to cut plastic package materials, the stress borne by the product in the cutting process is reduced by more than 90%, the product is prevented from being layered, and the reliability of the product is improved; only tin and silver need be cut during cutting, and because tin and silver are soft, cutting stress is little, cutting abrasion is little, chip reliability improves, can reduce the wearing and tearing of cutting tool.
Example 2
A plane convex point type metal-free cutting packaging structure comprises a chip bearing base, a routing inner foot bearing base, a chip 7, a metal wire and a plastic package body 8, wherein the chip bearing base comprises a base island 6 and a base island front metal layer 3, the routing inner foot bearing base comprises a pin 5 and a front metal layer 3 of the pin, the metal layer 3 is arranged on a connecting rib, the chip 7 is implanted on the front metal layer 3 of the chip bearing base, the front surface of the chip 7 and the front metal layer 3 of the pin 5 are respectively connected with two ends of the metal wire to form a packaging structure semi-finished product, the front surface and the peripheral edge of the packaging structure semi-finished product are packaged by the plastic package body 8, the back surfaces of the base island 6 and the pin 5 protrude out of the surface of the plastic package body 8, and the base island 6 protruding out of the plastic package body 8 and the surface of the pin 6. The pin metal layer 9 is a tin layer, and the connecting ribs of the chip 3 are silver layers. The front metal layers 3 of the base island 6 and the pin 5 are gold, silver, copper, nickel or nickel palladium. The metal wire for routing connection of the chip 7 and the pin 5 is a gold wire, a silver wire, a copper wire or an aluminum wire.
The invention and its embodiments have been described above schematically, without limitation, and the invention can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The representation in the drawings is only one of the embodiments of the invention, the actual construction is not limited thereto, and any reference signs in the claims shall not limit the claims concerned. Therefore, if a person skilled in the art receives the teachings of the present invention, without inventive design, a similar structure and an embodiment to the above technical solution should be covered by the protection scope of the present patent.

Claims (6)

1. A flat bump type metal-free cutting packaging process comprises the following steps:
1) taking a metal substrate (1);
2) respectively sticking dry film layers (2) on the front surface and the back surface of the metal substrate (1) to protect the subsequent etching process operation;
3) removing part of the dry film layer (2) on the front surface of the metal substrate (1), and preparing to form a base island (6), a connecting rib and a pin (5) on the metal substrate (1);
4) plating a front metal layer (3) on the front of a base island (6), a connecting rib and a pin (5) area to be formed on a metal substrate (1), and plating silver on the connecting rib; the pin metal layer (9) is a tin layer;
5) removing the residual dry film layer (2) on the upper layer of the metal substrate (1) and leaking out of the etching area (4);
6) performing half etching on the dry film region removed in the step 5, forming a sunken half-etched region on the metal substrate (1), and simultaneously forming a base island (6) and a pin (5) relatively;
7) implanting a chip (7) on the metal layer (3) on the front surface of a base island (6) of the metal substrate (1) to form an array type aggregate semi-finished product of an integrated circuit or a discrete component; implanting a chip (7) on the metal layer (3) on the front surface of the base island (6) by using eutectic welding mounting;
8) routing the semi-finished product which finishes the chip (7) implantation operation;
9) encapsulating and post-curing;
10) sticking a dry film layer (2) on the back (1) of the metal substrate again;
11) removing the dry film layer (2) on the back of the half-etched area of the metal substrate (1) to expose the area needing etching subsequently;
12) the back of the metal substrate (1) is fully etched in the area which is not covered by the dry film, all unnecessary metal is removed, and the base island (6) and the pins (5) are protruded out of the surface of the plastic package body (8); the connecting ribs of the chip (3) are silver layers and do not comprise a metal substrate;
13) removing the residual dry film layer (2) on the back surface of the metal substrate (1) to facilitate the subsequent electroplating process operation;
14) electroplating metal on the protruded base island (6) and the pins (5) to form a pin metal layer (9); electroplating metal tin on the outer leakage pin of the plastic package body (8);
15) and (3) sticking a UV film on the front surface of the plastic packaging body (8), then performing cutting operation, and separating products.
2. The flat bump type metal-free dicing and packaging process according to claim 1, wherein: the front metal layer (3) of the base island (6) and the pin (5) is made of gold, silver, copper, nickel or nickel-palladium metal.
3. The flat bump type metal-free dicing and packaging process according to claim 1 or 2, wherein: and (3) carrying out routing on the semi-finished product of the chip (7) implantation operation, wherein the metal wire of the routing is a gold wire, a silver wire, a copper wire or an aluminum wire.
4. A package structure manufactured by the flat bump type metal-free dicing package process according to claim 1, wherein: comprises a chip bearing base, a routing inner pin bearing base, a chip (7), a metal wire and a plastic package body (8), the chip bearing base comprises a base island (6) and a base island front metal layer (3), the wire bonding inner pin bearing base comprises pins (5) and a front metal layer (3) of the pins, the metal layer (3) is arranged on the connecting ribs, a chip (7) is implanted on the front metal layer (3) of the chip bearing base, the front surface of the chip (7) and the front metal layer (3) of the pins (5) are respectively connected with two ends of a metal wire to form a semi-finished product of a packaging structure, the front surface and the peripheral edge of the semi-finished product of the packaging structure are encapsulated by plastic encapsulation bodies (8), the back surfaces of the base island (6) and the pin (5) are protruded out of the surface of the plastic package body (8), and the surfaces of the base island (6) and the pin (6) protruded out of the plastic package body (8) are plated with pin metal layers (9); the pin metal layer (9) is a tin layer, the connecting ribs of the chip (3) are silver layers, and the metal substrate is not included.
5. The flat bump type metal-free dicing package according to claim 4, wherein: the front metal layers (3) of the base island (6) and the pins (5) are gold, silver, copper, nickel or nickel palladium.
6. The flat bump type metal-free dicing package according to claim 4, wherein: the metal wire for the routing connection of the chip (7) and the pin (5) is a gold wire, a silver wire, a copper wire or an aluminum wire.
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CN108389805A (en) * 2018-04-28 2018-08-10 长电科技(滁州)有限公司 A kind of high reliability planar salient point type encapsulating method and structure
CN109002806A (en) * 2018-07-27 2018-12-14 星科金朋半导体(江阴)有限公司 A kind of rear road packaging method of QFN product
CN109585568A (en) * 2018-11-29 2019-04-05 丽智电子(昆山)有限公司 A kind of diode component and its manufacturing method based on laser processing
CN111987002A (en) * 2020-09-04 2020-11-24 长电科技(滁州)有限公司 Package forming method
CN116207057B (en) * 2023-03-21 2024-02-02 深圳市芯友微电子科技有限公司 Processing structure and processing method of microminiature package

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