CN106158742A - A kind of planar salient point type is without Metal Cutting packaging technology and encapsulating structure thereof - Google Patents

A kind of planar salient point type is without Metal Cutting packaging technology and encapsulating structure thereof Download PDF

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Publication number
CN106158742A
CN106158742A CN201610763616.3A CN201610763616A CN106158742A CN 106158742 A CN106158742 A CN 106158742A CN 201610763616 A CN201610763616 A CN 201610763616A CN 106158742 A CN106158742 A CN 106158742A
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metal
pin
chip
dao
layer
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CN106158742B (en
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吴奇斌
吕磊
吴莹莹
吴涛
邱冬冬
李邦杰
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Changjiang Electronics Technology Chuzhou Co Ltd
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Changjiang Electronics Technology Chuzhou Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/301—Disposition
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
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    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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    • H01L2924/181—Encapsulation

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Abstract

The invention discloses a kind of planar salient point type without Metal Cutting packaging technology and encapsulating structure thereof, belong to field of semiconductor manufacture.Step is as follows: 1) take metal basal board；2) photopolymer layer is each sticked at metal basal board front, the back side；3) part photopolymer layer removes；4) prepare the Ji Dao of formation, even muscle on metallic substrates, the front of pin field plates front metal layer, even silver-plated at muscle；5) remove photopolymer layer, spill etching region；6) half-etching, forms the half-etched regions of depression on metallic substrates, forms Ji Dao and pin；7) implanted chip；8) routing；9) encapsulating, solidifies afterwards；10) photopolymer layer is again being pasted；11) gold photopolymer layer is removed；12) at the metal basal board back side, region to not covered by dry film carries out total eclipse quarter, and Shi Ji island and pin protrude plastic-sealed body surface；13) photopolymer layer is removed；14) pin metal level is formed；15) cutting.It is high that it can realize reliability, the advantage that tool wear is low.

Description

A kind of planar salient point type is without Metal Cutting packaging technology and encapsulating structure thereof
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, it relates to a kind of planar salient point type encapsulates without Metal Cutting Technique and encapsulating structure thereof.
Background technology
Recent decades, integrated antenna package technology follows the development of integrated circuit always, and people are always little Best equilibrium point is sought between volume and high-performance.It is encapsulated into the encapsulation of SOP surface patch formula from the DIP plug-in type of the seventies, QFP Flat type patch to the eighties encapsulates again, and the encapsulation volume of chip is always towards miniaturization, and structural behaviour is not yet Promote disconnectedly.To the nineties, the appearance that QFN flat-four-side encapsulates without foot formula, it is will be original at packaging body on the basis of QFP Output pin folding and unfolding around is to package bottom, thus greatly reduces shared space when paster operation.But QFN often has The problems such as interior foot solder joint shakiness, flash, frequency of doing over again are high, encapsulation yield is on the low side.The encapsulation of FBP planar salient point type is then for improving Problems in QFN production process and the new packaging form independently developed.
The encapsulation of FBP (Flat Bump Package) planar salient point type is the newest research results of long electricity science and technology.At volume On, FBP can be less than QFN, thinner, really meets the compact market demand.Its stable unfailing performance, outstanding is low Impedance, high heat radiation, superconduct performance and meet present IC designer trends simultaneously.Button type pin design unique for FBP also makes Welding more simply, more firm.But at present discrete device product (DFN QFN FBP), cutting uses resin cutter, and cutting process will produce Product are separated to be needed to excise substantial amounts of metal material.It is primarily present following not foot point:
A, product are relatively big by stress, cause product layering occur, affect product reliability；
B, excising a large amount of metals due to cutting, cause tool wear very fast, cutter changing frequency is higher.
Chinese patent application, application number 200510040262.1, publication date on February 1st, 2006, disclose a kind of integrated electricity Road or discrete component flat bump package technics, comprise the following steps that: depletion belongs to substrate material, on the two sides of substrate each Sticking photopolymer layer, the two sides correspondence at substrate removes part dry film, prepares to form Ji Dao and pin on substrate, accurate on substrate The standby two sides forming Ji Dao and pin field all plates metal level, removes the remaining dry film of substrate front side, and half-etching, on substrate Form the partially etching area of depression, relatively form Ji Dao and pin with entering, remove the remaining dry film of substrate back, at Ji Dao front gold Belonging to layer and implant chip, break metal wire, encapsulate plastic-sealed body, front print, partially etching area remaining part metal is etched again, moulds Glued membrane is sticked in envelope body front, cutting.Sexuality is strong, best in quality, cost is relatively low, it is smooth and easy to produce in this invention weldering, the suitability is relatively strong, All puzzlements that multi-chip arrangement is flexible, plastic packaging material will not be occurred to permeate.But when producing, cutting attrition is big, cutting Time product relatively big by stress, affect product reliability.
Summary of the invention
1. to solve the technical problem that
For product present in prior art, the problem that layering, poor reliability, tool wear are fast, the present invention easily occur Provide a kind of planar salient point type without Metal Cutting packaging technology and encapsulating structure thereof.It is high that it can realize reliability, and cutter grinds Damage low advantage.
2. technical scheme
The purpose of the present invention is achieved through the following technical solutions.
1, a kind of planar salient point type is without Metal Cutting packaging technology, and its step is as follows:
1) one piece of metal basal board is taken；
2) photopolymer layer is each sticked at metal basal board front, the back side to protect follow-up etch process operation；
3) the part photopolymer layer in metal basal board front is removed, prepare on metallic substrates to form Ji Dao, even muscle, pin；
4) prepare the Ji Dao of formation, even muscle, the front of pin field on metallic substrates and plate front metal layer, be beneficial to During follow-up bonding wire, metal wire pin in chip region and routing is combined closely, even silver-plated for follow-up plated conductive pin at muscle Tin plating；
5) remove the remaining photopolymer layer in metal basal board upper strata, spill etching region；
6) the dry film region removing step 5 carries out half-etching, forms the half-etched regions of depression on metallic substrates, with Time relatively form Ji Dao and pin；
7) on the base island front metal layer of metal basal board, carry out implanted chip, form integrated circuit or the row of discrete component Configuration aggregation semi-finished product；
8) semi-finished product being complete implanted chip operation are carried out routing；
9) encapsulating, solidifies afterwards；
10) photopolymer layer is again pasted at the metal basal board back side；
11) photopolymer layer at the metal basal board half-etched regions back side is removed, to expose the region of follow-up needs etching；
12) at the metal basal board back side, region to not covered by dry film carries out total eclipse quarter, and Shi Ji island and pin protrude plastic packaging Surface；
13) remove the remaining photopolymer layer in the metal basal board back side and be beneficial to follow-up electroplating technology operation；
14) at the Ji Dao protruded, pin plated metal, pin metal level is formed；
15) carrying out cutting operation after plastic-sealed body front being sticked UV film, product separates.
Further, it is characterised in that: step 7) use eutectic welding load to implant on the front metal layer of base island Chip.
Further, the front metal layer of Ji Dao and pin uses gold silver, copper, nickel or NiPdAu to belong to.
Further, the semi-finished product of implanted chip operation carry out routing, and the metal wire of routing is gold thread, silver wire, copper cash Or aluminum steel.
Further, step 4 is silver-plated at even muscle, and on the basis of step 4, plastic-sealed body is leaked outside pin by step 14 Plated metal stannum, forms pin metal level.
A kind of planar salient point type is without Metal Cutting encapsulating structure, including foot bearing base, core in chip bearing substrate, routing Sheet, metal wire and plastic-sealed body, described chip bearing substrate includes Ji Dao and base island front metal layer, in described routing Foot bearing base includes the front metal layer of pin and pin, even has metal level on muscle, the front metal of chip bearing substrate Implant chip, chip front side and pin front metal layer on Ceng to be connected with metal wire two ends respectively and make encapsulating structure semi-finished product, Encapsulating structure semi-finished product front and neighboring plastic-sealed body are encapsulated, and the back side of Bing Shiji island and pin protrudes from plastic packaging body surface Face, the protrusion Ji Dao of plastic-sealed body, pin surface are coated with pin metal level.
Further, described pin metal level is tin layers, and company's muscle of chip is silver layer.Cutting is had only to when cutting Stannum and silver, due to stannum and silver soft, cutting stress is little, and cutting abrasion is little, and chip reliability improves.
Further, the front metal layer of Ji Dao and pin is gold, silver, copper, nickel or nickel palladium.Capsulation material and gold, silver, Copper, nickel or nickel palladium binding ability are good, it is not easy to cause layering.
Further, the metal wire that chip is connected with pin routing is gold thread, silver wire, copper cash or aluminum steel.Material is lazy Property material, the holding time is long, and conductivity and thermal diffusivity are good.
3. beneficial effect
Compared to prior art, it is an advantage of the current invention that:
(1) using this programme, product is through operation 10,11,12,13, and all Copper base material are all corroded, and cuts in operation 15 Cut process, belong to without Metal Cutting, directly the metallic substrates of chip chamber is first removed, when cutting separating chips, cutter Have only to cut plastic packaging material, suffered by cutting process product stress reduce by more than 90%, it is to avoid product occur layering, improve product Reliability；
(2) having only to when cutting cut stannum and silver, owing to stannum and silver ground are soft, cutting stress is little, and cutting is worn and torn little, core Sheet reliability improves, it is possible to reduce the abrasion of cutting tool；
(3) original cutting resin cutter is readily modified as steel edge cutting, and cutting process product surface is more smooth, tool wear Reduction can use the cutter that mesh number is bigger, and cutter mesh number is the biggest, and chip is less, cutting process product surface more light Sliding, chip is less, and product design product design more attractive in appearance is more attractive in appearance；
(4) eutectic welding load is used so that chip is installed more faster, and efficiency is high, good reliability；
(5) prepare the Ji Dao of formation, even muscle, the front of pin field on metallic substrates and plate front metal layer, in order to When follow-up bonding wire, metal wire pin in chip region and routing is combined closely, even silver-plated for follow-up plated conductive pipe at muscle Foot is tin plating, and operation is simple, and cost reduces；
(6) front metal layer of Ji Dao and pin is gold, silver, copper, nickel or nickel palladium, capsulation material and gold, silver, copper, nickel or Nickel palladium binding ability is good, it is not easy to cause layering；
(7) metal wire that chip is connected with pin routing is gold thread, silver wire, copper cash or aluminum steel, and material is inert material, protects Time of depositing is long, and conductivity and thermal diffusivity are good.
Accompanying drawing explanation
Chip structure schematic diagram after each operation of Fig. 1-9 respectively this programme step 1-9；
Figure 10 is chip structure schematic diagram after step this programme 10,11,12,13 operation；
Figure 11 is chip structure schematic diagram after step this programme 14 operation；
Figure 12 is chip structure schematic diagram after step this programme 15 operation；
Figure 13 is chip structure schematic diagram after prior art step 6 operation；
Figure 14 is chip structure schematic diagram after prior art step 10,11,12,13 operations；
Figure 15 is chip structure schematic diagram after prior art step 14 operation；
Figure 16 is chip structure schematic diagram after prior art step 15 operation.
Label declaration in figure:
1, metal basal board；2, photopolymer layer；3, front metal layer；4, etching region；5, pin；6, Ji Dao；7, chip；8, plastic packaging Body；9, pin metal level.
Detailed description of the invention
Below in conjunction with Figure of description and specific embodiment, the present invention is described in detail.
Embodiment 1
Such as Fig. 1-12, a kind of planar salient point type is without Metal Cutting packaging technology, and its step is as follows:
1) one piece of metal basal board 1 is taken；
2) in metal basal board 1 front, the back side each stick photopolymer layer 2 to protect follow-up etch process operation；
3) the part photopolymer layer 2 in metal basal board 1 front is removed, metal basal board 1 prepares form base island 6, even muscle, draw Foot 5；
4) on metal basal board 1, prepare the base island 6 of formation, even muscle, the front in pin 5 region plate front metal layer 3, base The front metal layer 3 of island 6 and pin 5 uses gold, silver, copper, nickel or NiPdAu to belong to.It is beneficial to metal wire and chip during follow-up bonding wire In district and routing, pin combines closely, even silver-plated tin plating for follow-up plated conductive pin at muscle；
5) remove the remaining photopolymer layer in metal basal board 1 upper strata 2, spill etching region 4；
6) the dry film region removing step 5 carries out half-etching, forms the half-etched regions of depression on metal basal board 1, The most relatively form base island 6 and pin 5；
7) on base island 6 front metal layer 3 of metal basal board 1, carry out chip 7 to implant, form integrated circuit or discrete component Array type aggregation semi-finished product；Eutectic welding load is used to implant chip 7.
8) semi-finished product being complete chip 7 and implanting operation are carried out routing；The metal wire of routing is gold thread, silver wire, copper Line or aluminum steel
9) encapsulating, solidifies afterwards；
10) photopolymer layer 2 is again pasted in Metal Substrate backboard 1 face；
11) photopolymer layer 2 at the metal basal board 1 half-etched regions back side is removed, to expose the region of follow-up needs etching；
12) at metal basal board 1 back side, region to not covered by dry film carries out total eclipse quarter, and Shi Ji island 6 and pin 5 protrude to be moulded Envelope body 8 surface；
13) remove the remaining photopolymer layer in metal basal board 1 back side 2 and be beneficial to follow-up electroplating technology operation；
14) at the base island 6 protruded, pin (5) plated metal, pin metal level 9 is formed；Silver-plated at plastic-sealed body connecting at muscle The pin plated metal stannum that leaks outside of 8, forms pin metal level 9.
15) carrying out cutting operation after plastic-sealed body 8 front being sticked UV film, product separates.
Such as Figure 13, in prior art, 6 steps only carry out pin and Ji Dao plating；Such as Figure 14,10-13 step in prior art Part metals is only removed in original etching, and this programme removes all unwanted copper materials.Such as Figure 15, in prior art, 14 steps are with gold Belonging to base material is that even pin, the Ji Dao of product are electroplated by muscle.Form chip as shown in figure 16.Through our scheme, product Through operation 10,11,12,13, all Copper base material are all corroded, and at operation 15 cutting process, belong to without Metal Cutting, directly The metallic substrates of chip chamber first being removed, when cutting separating chips, cutter have only to cut plastic packaging material, cutting process product Suffered stress reduces by more than 90%, it is to avoid layering occurs in product, improves product reliability；Have only to when cutting cut stannum And silver, due to stannum and silver soft, cutting stress is little, and cutting abrasion is little, and chip reliability improves, it is possible to reduce cutting tool Abrasion.
Embodiment 2
A kind of planar salient point type is without Metal Cutting encapsulating structure, including foot bearing base, core in chip bearing substrate, routing Sheet 7, metal wire and plastic-sealed body 8, described chip bearing substrate includes base island 6 and base island front metal layer 3, and described beats In line, foot bearing base includes the front metal layer 3 of pin 5 and pin, even has metal level 3 on muscle, and chip bearing substrate is just Implanting chip 7 on face metal level 3, chip 7 front and pin 5 front metal layer 3 are connected with metal wire two ends respectively makes encapsulation Structure semi-finished product, encapsulating structure semi-finished product front and neighboring plastic-sealed body 8 are encapsulated, Bing Shiji island 6 and the back side of pin 5 Protruding from plastic-sealed body 8 surface, the protrusion base island 6 of plastic-sealed body 8, pin 6 surface are coated with pin metal level 9.Described pin metal Layer 9 is tin layers, and company's muscle of chip 3 is silver layer.The front metal layer 3 of base island 6 and pin 5 is gold silver, copper, nickel or nickel palladium.Chip 7 The metal wire being connected with pin 5 routing is gold thread, silver wire, copper cash or aluminum steel.
Below being schematically described the invention and embodiment thereof, this description does not has restricted, not In the case of deviating from the spirit or essential characteristics of the present invention, it is possible to realize the present invention in other specific forms.Institute in accompanying drawing Show is also one of embodiment of the invention, and actual structure is not limited thereto, any attached in claim Figure labelling should not limit involved claim.So, if those of ordinary skill in the art is enlightened by it, without departing from In the case of this creation objective, design the frame mode similar to this technical scheme and embodiment without creative, all should Belong to the protection domain of this patent.

Claims (9)

1. planar salient point type is without a Metal Cutting packaging technology, and its step is as follows:
1) one piece of metal basal board (1) is taken；
2) in metal basal board (1) front, the back side each stick photopolymer layer (2) to protect follow-up etch process operation；
3) the part photopolymer layer (2) in metal basal board (1) front is removed, form Ji Dao (6) upper preparation of metal basal board (1), connect Muscle, pin (5)；
4) front metal layer is plated in the upper Ji Dao (6) of formation, even muscle, the front in pin (5) region of preparing of metal basal board (1) (3), silver-plated at company's muscle；
5) remove the remaining photopolymer layer in metal basal board (1) upper strata (2), spill etching region (4)；
6) the dry film region removing step 5 carries out half-etching, above forms the half-etched regions of depression at metal basal board (1), with Time relatively form Ji Dao (6) and pin (5)；
7) on Ji Dao (6) front metal layer (3) of metal basal board (1), carry out chip (7) implant, form integrated circuit or discrete The array type aggregation semi-finished product of element；
8) semi-finished product being complete chip (7) implantation operation are carried out routing；
9) encapsulating, solidifies afterwards；
10) photopolymer layer (2) is again pasted in Metal Substrate backboard (1) face；
11) photopolymer layer (2) at metal basal board (1) the half-etched regions back side is removed, to expose the region of follow-up needs etching；
12) at metal basal board (1) back side, region to not covered by dry film carries out total eclipse quarter, and Shi Ji island (6) and pin (5) protrude Plastic-sealed body (8) surface；
13) remove the remaining photopolymer layer in metal basal board (1) back side (2) and be beneficial to follow-up electroplating technology operation；
14) at the Ji Dao (6) protruded, pin (5) plated metal, pin metal level (9) is formed；
15) carrying out cutting operation after plastic-sealed body (8) front being sticked UV film, product separates.
A kind of planar salient point type the most according to claim 1 is without Metal Cutting packaging technology, it is characterised in that: step 7) Ji Dao (6) front metal layer (3) is upper uses eutectic welding load to implant chip (7).
A kind of planar salient point type the most according to claim 1 is without Metal Cutting packaging technology, it is characterised in that: Ji Dao (6) And the front metal layer (3) of pin (5) uses gold, silver, copper, nickel or NiPdAu to belong to.
4. according to a kind of planar salient point type described in claim 1 or 2 or 3 without Metal Cutting packaging technology, it is characterised in that: core Sheet (7) is implanted the semi-finished product of operation and is carried out routing, and the metal wire of routing is gold thread, silver wire, copper cash or aluminum steel.
A kind of planar salient point type the most according to claim 1 is without Metal Cutting packaging technology, it is characterised in that: step 4 exists Even silver-plated at muscle, on the basis of step 4, plastic-sealed body (8) is leaked outside pin plated metal stannum by step 14, forms pin metal Layer (9).
6. a planar salient point type is without Metal Cutting encapsulating structure, it is characterised in that: in including chip bearing substrate, routing, foot holds Carrying base, chip (7), metal wire and plastic-sealed body (8), described chip bearing substrate includes Ji Dao (6) and Ji Dao front Metal level (3), in described routing, foot bearing base includes the front metal layer (3) of pin (5) and pin, even has gold on muscle Belong to layer (3), the front metal layer (3) of chip bearing substrate is implanted chip (7), chip (7) front and pin (5) front metal Layer (3) is connected with metal wire two ends respectively makes encapsulating structure semi-finished product, and encapsulating structure semi-finished product front and neighboring are used Plastic-sealed body (8) is encapsulated, and the back side of Bing Shiji island (6) and pin (5) protrudes from plastic-sealed body (8) surface, protrudes the base of plastic-sealed body (8) Island (6), pin (6) surface are coated with pin metal level (9).
A kind of planar salient point type the most according to claim 6 is without Metal Cutting encapsulating structure, it is characterised in that: described pipe Foot metal level (9) is tin layers, and company's muscle of chip (3) is silver layer.
A kind of planar salient point type the most according to claim 6 is without Metal Cutting encapsulating structure, it is characterised in that: Ji Dao (6) And the front metal layer (3) of pin (5) is gold silver, copper, nickel or nickel palladium.
A kind of planar salient point type the most according to claim 6 is without Metal Cutting packaging technology, it is characterised in that: chip (7) The metal wire being connected with pin (5) routing is gold thread, silver wire, copper cash or aluminum steel.
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CN108389805A (en) * 2018-04-28 2018-08-10 长电科技（滁州）有限公司 A kind of high reliability planar salient point type encapsulating method and structure
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CN106409689B (en) * 2016-09-30 2019-11-01 乐依文半导体(东莞)有限公司 High-density circuit chip packaging process
CN108389805A (en) * 2018-04-28 2018-08-10 长电科技（滁州）有限公司 A kind of high reliability planar salient point type encapsulating method and structure
CN109002806A (en) * 2018-07-27 2018-12-14 星科金朋半导体（江阴）有限公司 A kind of rear road packaging method of QFN product
CN109585568A (en) * 2018-11-29 2019-04-05 丽智电子(昆山)有限公司 A kind of diode component and its manufacturing method based on laser processing
CN111987002A (en) * 2020-09-04 2020-11-24 长电科技（滁州）有限公司 Package forming method
CN116207057A (en) * 2023-03-21 2023-06-02 深圳市芯友微电子科技有限公司 Processing structure and processing method of microminiature package
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