CN101853832B - Base island exposed type and embedded type base island lead frame structure and first-engraving last-plating method thereof - Google Patents
Base island exposed type and embedded type base island lead frame structure and first-engraving last-plating method thereof Download PDFInfo
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- CN101853832B CN101853832B CN2010101636389A CN201010163638A CN101853832B CN 101853832 B CN101853832 B CN 101853832B CN 2010101636389 A CN2010101636389 A CN 2010101636389A CN 201010163638 A CN201010163638 A CN 201010163638A CN 101853832 B CN101853832 B CN 101853832B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention relates to a base island exposed type and embedded type base island lead frame structure and a first-engraving last-plating method thereof. The structure comprises base islands (1) and pins (2), wherein two groups of base islands (1) are provided, and one group consists of first base islands (1.1), while the other group consists of second base islands (1.2); the front sides of the first base islands (1.1), the second base islands (1.2) and the pins (2) are provided with a first metal layer (4), and the back sides of the first base islands (1.1) and the pins (2) are provided with a second metal layer (5); areas on the periphery of the pins (2), areas between the pins (2) and the base islands, areas between the first base islands and the second base islands, the back sides of the second base islands (1.2) and areas between the pins are embedded with packless plastic package materials (3); and the sizes of the back sides of the first base islands (1.1) and the pins (2) are smaller than the sizes of the front sides of the first base islands and the pins so as to form a first base island and pin structure which is big on the top and small at the bottom. The invention has the advantage of large constraint capacity of the plastic package body and the metal pins.
Description
(1) technical field
The present invention relates to a kind of base island exposed type and baried type base island lead frame structure and first-engraving last-plating method thereof.Belong to the semiconductor packaging field.
(2) background technology
Traditional lead frame structure, detailed following explanation:
After chemical etching and surface electrical coating are carried out in the front of employing metal substrate, promptly finish the making (as shown in figure 14) of lead frame.Back etched is then carried out at the back side of lead frame again in encapsulation process.
And the not enough point of above-mentioned lead frame below in encapsulation process, having existed:
The lead frame structure of this kind has carried out etching partially technology in the metal substrate front, because only carried out the work that etches partially in the metal substrate front, and plastic packaging material only envelopes the height of half pin in the plastic packaging process, so the constraint ability of plastic-sealed body and metal leg has just diminished, when if the plastic-sealed body paster is not fine to pcb board, do over again again and heavily paste, with regard to the problem (as shown in figure 15) that is easy to generate pin.
Especially the kind of plastic packaging material is to adopt when filler is arranged, because material is at the environment and the follow-up surface-pasted stress changing relation of production process, can cause metal and plastic packaging material to produce the crack of vertical-type, its characteristic is the high more then hard more crisp more crack that is easy to generate more of proportion of filler.
(3) summary of the invention
The objective of the invention is to overcome above-mentioned deficiency, big the exposing and baried type base island lead frame structure and first-engraving last-plating method thereof of constraint ability of a kind of plastic-sealed body and metal leg is provided.
The object of the present invention is achieved like this: a kind of exposing and the baried type base island lead frame structure, comprise Ji Dao and pin, described Ji Dao has two groups, one group is first Ji Dao, another group is second Ji Dao, at described first Ji Dao, the front of second Ji Dao and pin is provided with the first metal layer, the back side at described first Ji Dao and pin is provided with second metal level, zone in described pin periphery, zone between pin and the basic island, zone between first Ji Dao and the second basic island, zone between the second Ji Dao back side and pin and the pin is equipped with packless plastic packaging material, described packless plastic packaging material is with periphery, pin bottom, the pin and the first Ji Dao bottom, the second Ji Dao back side, the second Ji Dao back side and the first Ji Dao bottom, the second Ji Dao back side and pin bottom and pin and pin bottom link into an integrated entity, and make described first Ji Dao and pin back side size less than first Ji Dao and the positive size of pin, form up big and down small first Ji Dao and pin configuration.
The present invention exposes and baried type base island lead frame carving before plating production method, and described method comprises following processing step:
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of metal substrate.
Exposure imaging removal part photoresist film is carried out in the metal substrate front that utilizes exposure imaging equipment that step 2 is finished the pad pasting operation, to expose the zone that follow-up needs etch partially on the metal substrate.
Step 4, metal substrate front etch partially
The positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially,, form Ji Dao and pin simultaneously relatively in the positive half-etched regions that forms depression of metal substrate, described Ji Dao has two groups, one group is first Ji Dao, and another group is second Ji Dao
The film operation is taken off at step 5, the positive back side of metal substrate
The positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed.
In the positive half-etched regions that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material.
Step 7, the pad pasting operation of the positive back side of metal substrate
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of the metal substrate of finishing the packless soft gap filler operation of full-filling.
Step 8, removal part photoresist film
In the front of metal substrate and the back side remove the part photoresist film, with the back side of exposing first Ji Dao and pin and the front of first Ji Dao, second Ji Dao and pin.
First Ji Dao that exposes in step 8 and the back side of pin plate second metal level, plate the first metal layer in the front of first Ji Dao, second Ji Dao and pin.
Remove metal substrate back portion photoresist film, with zone between the zone between zone, pin and the basic island of exposing pin periphery, the metal substrate back side, first Ji Dao and the second basic island and the zone between pin and the pin.
Is the front that the metal of step 4 remaining part etches described first Ji Dao, second Ji Dao and pin simultaneously at the back side of metal substrate to the zone that is not covered by photoresist film, and make the positive size of the size at described first Ji Dao and the pin back side, form up big and down small structure less than first Ji Dao and pin.
The film operation is taken off at step 12, the positive back side of metal substrate
The photoresist film of metal substrate front and back remainder is removed.
The invention has the beneficial effects as follows:
1) because the zone between described metal leg and metal leg is equipped with packless soft gap filler, this packless soft gap filler has the filler plastic packaging material to envelope the height of whole metal leg with the routine in the plastic packaging process, so the constraint ability of plastic-sealed body and metal leg just becomes big, do not have the problem that produces pin again.
2) owing to adopted positive method of separating the etching operation with the back side, so in the etching operation, can form the slightly little and big slightly structure of positive basic island size of the size of back side Ji Dao, and slided by the tighter more difficult generation that packless plastic packaging material coated and falling pin with the size that varies in size up and down of a Ji Dao.
(4) description of drawings
Fig. 1～12 are the base island exposed type of the present invention and each operation schematic diagram of baried type base island lead frame carving before plating production method.
Figure 13 is base island exposed type of the present invention and baried type base island lead frame structure schematic diagram.
Figure 14 was for formed insulation pin schematic diagram in the past.
Figure 15 pin figure for what formed in the past.
Reference numeral among the figure:
1.1, the second basic island 1.2,1, the first basic island, base island, pin 2, packless plastic packaging material 3, the first metal layer 4, second metal level 5, metal substrate 6, photoresist film 7 and 8, half-etched regions 9, photoresist film 10 and 11.
(5) embodiment
The present invention expose and baried type base island lead frame first-engraving last-plating method as follows:
Referring to Fig. 1, get the suitable metal substrate of a slice thickness 6.The material of metal substrate 6 can be carried out conversion according to the function and the characteristic of chip, for example: copper, aluminium, iron, copper alloy or dilval etc.
Referring to Fig. 2, utilize film sticking equipment to stick the photoresist film 7 and 8 that can carry out exposure imaging respectively, to protect follow-up etch process operation at the front and the back side of metal substrate.
Referring to Fig. 3, exposure imaging removal part photoresist film is carried out in the metal substrate front that utilizes exposure imaging equipment that step 2 is finished the pad pasting operation, to expose the zone that follow-up needs etch partially on the metal substrate.
Step 4, metal substrate front etch partially
Referring to Fig. 4, the positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially, in the positive half-etched regions 9 that forms depression of metal substrate, form basic island 1 and pin 2 simultaneously relatively, its purpose mainly is to avoid occurring in subsequent job the glue that overflows.Described basic island 1 has two groups, and one group is the first basic island 1.1, and another group is the second basic island 1.2.
The film operation is taken off at step 5, the positive back side of metal substrate
Referring to Fig. 5, the positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed.
Referring to Fig. 6, in the positive half-etched regions 9 that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material 3.
Step 7, the pad pasting operation of the positive back side of metal substrate
Referring to Fig. 7, utilize film sticking equipment to stick the photoresist film 10 and 11 that can carry out exposure imaging respectively, to protect follow-up metal cladding process operation at the front and the back side of the metal substrate of finishing the packless soft gap filler operation of full-filling.
Step 8, removal part photoresist film
Referring to Fig. 8, remove the part photoresist film at the front and the back side of metal substrate, purpose is to expose the back side of first Ji Dao and pin and the front of first Ji Dao, second Ji Dao and pin.
Referring to Fig. 9, first Ji Dao that exposes in step 8 and the back side of pin plate second metal level 5, plate the first metal layer 4 in the front of first Ji Dao, second Ji Dao and pin, can be tightr, firm between metal wire and chip region and the routing Nei Jiao district during in order to follow-up bonding wire engage is increased in the conjugation that impels in the encapsulating process between Packed plastic packaging material simultaneously.And the one-tenth branch of metal level can be to adopt golden nickel gold, golden ambrose alloy nickel gold, NiPdAu, golden NiPdAu, nickel gold, silver or tin etc. because of different chip materials.
Referring to Figure 10, remove metal substrate back portion photoresist film, draw to expose the metal substrate back side
Zone between zone between the zone of pin periphery, pin and the basic island, first Ji Dao and the second basic island and the zone between pin and the pin.
Referring to Figure 11, is the front that the metal of step 4 remaining part etches described first 1.1, the second basic island 1.2, basic island and pin 2 simultaneously at the back side of metal substrate to the zone that is not covered by photoresist film, and make the positive size of the size at the described first basic island 1.1 and pin 2 back sides, form up big and down small structure less than the first basic island 1.1 and pin 2.
The film operation is taken off at step 12, the positive back side of metal substrate
Referring to Figure 12, the photoresist film of metal substrate front and back remainder is removed.
End product is referring to Figure 13: among Figure 13, base island 1, pin 2, packless plastic packaging material 3, the first metal layer 4 and second metal level 5, as seen from Figure 13, base island exposed type of the present invention and baried type base island lead frame structure, comprise basic island 1 and pin 2, described basic island 1 has two groups, one group is the first basic island 1.1, another group is the second basic island 1.2, on the described first basic island 1.1, the front of the second basic island 1.2 and pin 2 is provided with the first metal layer 4, the back side at the described first basic island 1.1 and pin 2 is provided with second metal level 5, zone in described pin 2 peripheries, zone between pin and the basic island, zone between first Ji Dao and the second basic island, zone between second 1.2 back sides, basic island and pin and the pin is equipped with packless plastic packaging material 3, described packless plastic packaging material 3 is with periphery, pin bottom, pin 2 and 1.1 bottoms, the first basic island, 1.2 back sides, the second basic island, the second Ji Dao back side 1.2 and 1.1 bottoms, the first basic island, second 1.2 back sides, basic island and pin 2 bottoms and pin 2 link into an integrated entity with pin 2 bottoms, and make the described first basic island 1.1 and pin 2 back side sizes less than the first basic island 1.1 and pin 2 positive sizes, form up big and down small first Ji Dao and pin configuration.
Claims (2)
1. base island exposed type and baried type base island lead frame structure, comprise Ji Dao (1) and pin (2), it is characterized in that: described Ji Dao (1) has two groups, one group is first Ji Dao (1.1), another group is second Ji Dao (1.2), at described first Ji Dao (1.1), the front of second Ji Dao (1.2) and pin (2) is provided with the first metal layer (4), the back side at described first Ji Dao (1.1) and pin (2) is provided with second metal level (5), in the peripheral zone of described pin (2), zone between pin (2) and the Ji Dao (1), zone between first Ji Dao (1.1) and second Ji Dao (1.2), zone between second Ji Dao (1.2) back side and pin (2) and the pin (2) is equipped with packless plastic packaging material (3), described packless plastic packaging material (3) is with periphery, pin bottom, pin (2) and first Ji Dao (1.1) bottom, second Ji Dao (1.2) back side, the second Ji Dao back side (1.2) and first Ji Dao (1.1) bottom, second Ji Dao (1.2) back side and pin (2) bottom and pin (2) link into an integrated entity with pin (2) bottom, and make described first Ji Dao (1.1) and pin (2) back side size less than first Ji Dao (1.1) and the positive size of pin (2), form up big and down small first Ji Dao and pin configuration.
2. first-engraving last-plating method for preparing base island exposed type as claimed in claim 1 and baried type base island lead frame structure is characterized in that described method comprises following processing step:
Step 1, get metal substrate,
Step 2, pad pasting operation
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of metal substrate,
Step 3, the positive part photoresist film of removing of metal substrate
The metal substrate front that utilizes exposure imaging equipment that step 2 is finished the pad pasting operation is exposed apparent
Shadow is removed the part photoresist film, exposing the zone that follow-up needs etch partially on the metal substrate,
Step 4, metal substrate front etch partially
The positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially,, form Ji Dao and pin simultaneously relatively in the positive half-etched regions that forms depression of metal substrate, described Ji Dao has two groups, one group is first Ji Dao, and another group is second Ji Dao
The film operation is taken off at step 5, the positive back side of metal substrate
The positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed,
Step 6, the packless soft gap filler of the positive half-etched regions full-filling of metal substrate
In the positive half-etched regions that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material,
Step 7, the pad pasting operation of the positive back side of metal substrate
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of the metal substrate of finishing the packless soft gap filler operation of full-filling,
Step 8, removal part photoresist film
In the front of metal substrate and the back side remove the part photoresist film, with the back side of exposing first Ji Dao and pin and the front of first Ji Dao, second Ji Dao and pin,
Step 9, metal cladding
First Ji Dao that exposes in step 8 and the back side of pin plate second metal level, plate the first metal layer in the front of first Ji Dao, second Ji Dao and pin,
Step 10, removal metal substrate back portion photoresist film
Remove metal substrate back portion photoresist film, with zone between the zone between zone, pin and the basic island of exposing pin periphery, the metal substrate back side, first Ji Dao and the second basic island and the zone between pin and the pin,
Step 11, the metal substrate back side etch partially
Is the front that the metal of step 4 remaining part etches described first Ji Dao, second Ji Dao and pin simultaneously at the back side of metal substrate to the zone that is not covered by photoresist film, and make the positive size of the size at described first Ji Dao and the pin back side less than first Ji Dao and pin, form up big and down small structure
The film operation is taken off at step 12, the positive back side of metal substrate
The photoresist film of metal substrate front and back remainder is removed.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101636389A CN101853832B (en) | 2010-04-28 | 2010-04-28 | Base island exposed type and embedded type base island lead frame structure and first-engraving last-plating method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101636389A CN101853832B (en) | 2010-04-28 | 2010-04-28 | Base island exposed type and embedded type base island lead frame structure and first-engraving last-plating method thereof |
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| CN101853832A CN101853832A (en) | 2010-10-06 |
| CN101853832B true CN101853832B (en) | 2011-12-07 |
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| CN107644839B (en) | 2017-08-31 | 2018-10-02 | 长江存储科技有限责任公司 | Wafer three-dimensional integration lead technique and its structure for three-dimensional storage |
| US10679941B2 (en) | 2017-08-31 | 2020-06-09 | Yangtze Memory Technologies Co., Ltd. | Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof |
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| JPH07335804A (en) * | 1994-06-14 | 1995-12-22 | Dainippon Printing Co Ltd | Lead frame and its manufacture |
| CN100370589C (en) * | 2005-04-07 | 2008-02-20 | 江苏长电科技股份有限公司 | Novel integrated circuit or discrete components ultra-thin non-pin packing technology and packing arrangement |
| US8084299B2 (en) * | 2008-02-01 | 2011-12-27 | Infineon Technologies Ag | Semiconductor device package and method of making a semiconductor device package |
| US7786557B2 (en) * | 2008-05-19 | 2010-08-31 | Mediatek Inc. | QFN Semiconductor package |
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