CN101819958A - Lead frame structure for flip chip and etching-plating production method thereof - Google Patents
Lead frame structure for flip chip and etching-plating production method thereof Download PDFInfo
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- CN101819958A CN101819958A CN201010158778A CN201010158778A CN101819958A CN 101819958 A CN101819958 A CN 101819958A CN 201010158778 A CN201010158778 A CN 201010158778A CN 201010158778 A CN201010158778 A CN 201010158778A CN 101819958 A CN101819958 A CN 101819958A
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- metal
- metal substrate
- back side
- photoresist film
- leg
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention relates to a lead frame structure for a flip chip, which comprises a plurality of metal pins (1), wherein the front side and the back side of each metal pin (1) are respectively provided with a first metal layer (3) and a second metal layer (4).The lead frame structure is characterized in that a molding compound (2) with no padding is embedded in the periphery of the metal pins (1) and the area between the metal pins (1), wherein the lower parts of the metal pins (1) are connected into a whole by the molding compound (2) with no padding, and the size of the back side of the metal pin (4) is smaller than that of the front side of the metal pin (4) to form a big-end-up metal pin (4) structure. The invention can reduce the encapsulation cost, can be applicable to varieties of products, and has good flip-chip quality, stable product reliability and large bonding strength between the molding compound and the metal pins.
Description
(1) technical field
The present invention relates to a kind of flip-chip lead frame structure and production method thereof.Belong to the semiconductor packaging field.
(2) background technology
Traditional flip-chip mainly contains two kinds with lead frame structure:
First kind of flip-chip lead frame structure:
After chemical etching and surface electrical coating are carried out in the front of employing metal substrate, stick the resistant to elevated temperatures glued membrane of one deck at the back side of metal substrate and form the leadframe carrier (as shown in figure 14) that to carry out encapsulation process.
Second kind of flip-chip lead frame structure:
After chemical etching and surface electrical coating are carried out in the front of employing metal substrate, promptly finish the making (as shown in figure 15) of lead frame.Back etched is then carried out at the back side of lead frame again in encapsulation process.
And the not enough point of two kinds of above-mentioned lead frames below in encapsulation process, having existed:
First kind of flip-chip put following explanation with the lead frame deficiency of lead frame structure:
1) but the lead frame of this kind must stick the glued membrane of one deck costliness high temperature resistance because of the back side.So directly increased high cost.
2) but also because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, so the load technology in encapsulation process can only be used conduction or nonconducting resin technology, and the technology that can not adopt eutectic technology and slicken solder is fully carried out load, so selectable product category just has bigger limitation.
3) but again because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, and in the flip-chip bonding technology in encapsulation process, because but the glued membrane of this high temperature resistance is a soft materials, so caused the instability of flip-chip bonding parameter, seriously influenced the stability of flip-chip quality and production reliability.
4) but again because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, and the plastic package process process in encapsulation process, because the high pressure of plastic packaging relation is easy to cause between lead frame and the glued membrane and infiltrates plastic packaging material, be that the kenel of conduction has become insulation pin (as shown in figure 16) on the contrary because of having infiltrated plastic packaging material and will formerly should belong to metal leg.
Second kind of flip-chip put following explanation with the lead frame deficiency of lead frame structure:
The lead frame structure of this kind has carried out etching partially technology in the metal substrate front, though can solve the problem of first kind of lead frame, but because only carried out the work that etches partially in the metal substrate front, and plastic packaging material only envelopes the height of half pin in the plastic packaging process, so the constraint ability of plastic-sealed body and metal leg has just diminished, when if the plastic-sealed body paster is not fine to pcb board, does over again again and heavily paste, with regard to the problem (as shown in figure 17) that is easy to generate pin.
Especially the kind of plastic packaging material is to adopt when filler is arranged, because material is at the environment and the follow-up surface-pasted stress changing relation of production process, can cause metal and plastic packaging material to produce the crack of vertical-type, its characteristic is the high more then hard more crisp more crack that is easy to generate more of proportion of filler.
(3) summary of the invention
The objective of the invention is to overcome above-mentioned deficiency, a kind of flip-chip usefulness lead frame structure and carving before plating production method thereof that packaging cost, selectable product category are wide, flip-chip quality is big with the constraint ability of good stability, plastic-sealed body and the metal leg of production reliability that reduce is provided.
The object of the present invention is achieved like this: a kind of flip-chip lead frame structure, comprise the number of metal pin, front and back at described metal leg is respectively arranged with the first metal layer and second metal level, zone between described metal leg periphery and metal leg and metal leg is equipped with packless plastic packaging material, described packless plastic packaging material links into an integrated entity the bottom of metal leg, and make described metal leg back side size less than the positive size of metal leg, form up big and down small metal leg structure.
Flip-chip of the present invention lead frame carving before plating production method, described method comprises following processing step:
Step 1, get metal substrate
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of metal substrate,
The metal substrate front that utilizes exposure imaging equipment that step 2 is finished the pad pasting operation is carried out exposure imaging and is removed the part photoresist film, exposing the zone that follow-up needs etch partially on the metal substrate,
The positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially,, forms the number of metal pin simultaneously relatively in the positive half-etched regions that forms depression of metal substrate,
The film operation is taken off at step 5, the positive back side of metal substrate
The positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed,
In the positive half-etched regions that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material,
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of the metal substrate of finishing the packless soft gap filler operation of full-filling, protecting follow-up metal cladding process operation,
Step 8, removal part photoresist film
In the front of metal substrate and the corresponding part photoresist film of removing in the back side, purpose is the back side and the front of exposing metal leg, preparing the zone of follow-up metal cladding,
The back side and the front of the metal leg that exposes in step 8 plate second metal level and the first metal layer respectively,
Remove metal substrate back portion photoresist film, exposing the metal substrate back side and the corresponding zone of described packless plastic packaging material,
Step 11, the metal substrate back side etch partially
Metal at the back side of metal substrate to step 4 half-etched regions remaining part carries out the etch process operation once more, the metal of described remaining part is all etched away, and make described metal leg back side size less than the positive size of metal leg, form up big and down small metal leg structure
The film operation is taken off at step 12, the positive back side of metal substrate
The photoresist film of metal substrate front and back remainder is removed.
The invention has the beneficial effects as follows:
1) but the glued membrane of one deck costliness high temperature resistance need not sticked in the back side of the lead frame of this kind.So directly reduced high cost.
2) but because the glued membrane of one deck high temperature resistance need not sticked in the back side of the lead frame of this kind yet, so the load technology in encapsulation process is except using conduction or nonconducting resin technology, can also adopt the technology of eutectic technology and slicken solder to carry out load, so selectable product category is just wide.
3) but again because the glued membrane of one deck high temperature resistance need not sticked in the back side of the lead frame of this kind, guaranteed the stability of flip-chip bonding parameter, guaranteed the stability of flip-chip quality and production reliability.
4) but again because the lead frame of this kind need not stick the glued membrane of one deck high temperature resistance, and the plastic package process process in encapsulation process can not cause between lead frame and the glued membrane fully and infiltrate plastic packaging material.
5) because the zone between described metal leg and metal leg is equipped with packless soft gap filler, this packless soft gap filler has the filler plastic packaging material to envelope the height of whole metal leg with the routine in the plastic packaging process, so the constraint ability of plastic-sealed body and metal leg just becomes big, do not have the problem that produces pin again.
(4) description of drawings
Fig. 1～12 are flip-chip of the present invention each operation schematic diagram of lead frame carving before plating production method.
Figure 13 is flip-chip of the present invention lead frame structure schematic diagram.
Figure 14 was for sticked the resistant to elevated temperatures glued membrane figure of one deck operation in the past at the back side of metal substrate.
Figure 15 was for to adopt the front of metal substrate to carry out chemical etching and surface electrical coating flow diagram in the past.
Figure 16 was for formed insulation pin schematic diagram in the past.
Figure 17 pin figure for what formed in the past.
Reference numeral among the figure:
Metal leg 1, packless plastic packaging material 2, the first metal layer 3, second metal level 4, metal substrate 5, photoresist film 6 and 7, half-etched regions 8, photoresist film 9 and 10.
(5) embodiment
Flip-chip of the present invention is as follows with lead frame carving before plating production method:
Step 1, get metal substrate
Referring to Fig. 1, get the suitable metal substrate of a slice thickness 5.The material of metal substrate 5 can be carried out conversion according to the function and the characteristic of chip, for example: copper, aluminium, iron, copper alloy or dilval etc.
Referring to Fig. 2, utilize film sticking equipment to stick the photoresist film 6 and 7 that can carry out exposure imaging respectively, to protect follow-up etch process operation at the front and the back side of metal substrate.
Referring to Fig. 3, exposure imaging removal part photoresist film is carried out in the metal substrate front that utilizes exposure imaging equipment that step 2 is finished the pad pasting operation, to expose the zone that follow-up needs etch partially on the metal substrate.
Referring to Fig. 4, the positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially, in the positive half-etched regions 8 that forms depression of metal substrate, form number of metal pin 1 simultaneously relatively, its purpose mainly is to avoid occurring in subsequent job the glue that overflows.
The film operation is taken off at step 5, the positive back side of metal substrate
The positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed, as Fig. 5.
Referring to Fig. 6, in the positive half-etched regions 8 that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material 2.
Referring to Fig. 7, utilize film sticking equipment to stick the photoresist film 9 and 10 that can carry out exposure imaging respectively, to protect follow-up metal cladding process operation at the front and the back side of the metal substrate of finishing the packless soft gap filler operation of full-filling.
Step 8, removal part photoresist film
Referring to Fig. 8, at the corresponding part photoresist film of removing in the front and the back side of metal substrate, purpose is the back side and the front of exposing metal leg, to prepare the zone of follow-up metal cladding.
Referring to Fig. 9, the back side and the front of the metal leg 1 that exposes in step 8, plate second metal level 4 and the first metal layer 3 respectively, can be tightr, firm between metal wire and chip region and the routing Nei Jiao district during in order to follow-up bonding wire engage is increased in the conjugation that impels in the encapsulating process between Packed plastic packaging material simultaneously.And the one-tenth branch of metal level can be to adopt golden nickel gold, golden ambrose alloy nickel gold, NiPdAu, golden NiPdAu, nickel gold, silver or tin etc. because of different chip materials.
Referring to Figure 10, remove metal substrate back portion photoresist film, exposing the metal substrate back side and the corresponding zone of described packless plastic packaging material,
Step 11, the metal substrate back side etch partially
Referring to Figure 11, metal at the back side of metal substrate to step 4 half-etched regions remaining part carries out the etch process operation once more, the metal of described remaining part is all etched away, and make described metal leg back side size, form up big and down small metal leg structure less than the positive size of metal leg.
The film operation is taken off at step 12, the positive back side of metal substrate
Referring to Figure 12, the photoresist film of metal substrate front and back remainder is removed.
End product is referring to Figure 13: among Figure 13, and metal leg 1, packless plastic packaging material 2, second metal level 4 and the first metal layer 3.As seen from Figure 13, flip-chip lead frame structure of the present invention, comprise number of metal pin 1, front and back at described metal leg 1 is respectively arranged with the first metal layer 3 and second metal level 4, zone between described metal leg 1 periphery and metal leg 1 and metal leg 1 is equipped with packless plastic packaging material 2, and described packless plastic packaging material 2 links into an integrated entity the bottom of metal leg 1.
Claims (2)
1. flip-chip lead frame structure, comprise number of metal pin (1), front and back at described metal leg (1) is respectively arranged with the first metal layer (3) and second metal level (4), it is characterized in that: the zone between described metal leg (1) periphery and metal leg (1) and metal leg (1) is equipped with packless plastic packaging material (2), described packless plastic packaging material (2) links into an integrated entity the bottom of metal leg (1), and make described metal leg (4) back side size less than the positive size of metal leg (4), form up big and down small metal leg (4) structure.
2. a flip-chip as claimed in claim 1 is characterized in that described method comprises following processing step with lead frame carving before plating production method:
Step 1, get metal substrate
Step 2, pad pasting operation
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of metal substrate,
Step 3, the positive part photoresist film of removing of metal substrate
The metal substrate front that utilizes exposure imaging equipment that step 2 is finished the pad pasting operation is carried out exposure imaging and is removed the part photoresist film, exposing the zone that follow-up needs etch partially on the metal substrate,
Step 4, metal substrate front etch partially
The positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially,, forms the number of metal pin simultaneously relatively in the positive half-etched regions that forms depression of metal substrate,
The film operation is taken off at step 5, the positive back side of metal substrate
The positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed,
Step 6, the packless soft gap filler of the positive half-etched regions full-filling of metal substrate
In the positive half-etched regions that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material,
Step 7, the pad pasting operation of the positive back side of metal substrate
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of the metal substrate of finishing the packless soft gap filler operation of full-filling, protecting follow-up metal cladding process operation,
Step 8, removal part photoresist film
In the front of metal substrate and the corresponding part photoresist film of removing in the back side, purpose is the back side and the front of exposing metal leg, preparing the zone of follow-up metal cladding,
Step 9, metal cladding
The back side and the front of the metal leg that exposes in step 8 plate second metal level and the first metal layer respectively,
Step 10, removal metal substrate back portion photoresist film
Remove metal substrate back portion photoresist film, exposing the metal substrate back side and the corresponding zone of described packless plastic packaging material,
Step 11, the metal substrate back side etch partially
Metal at the back side of metal substrate to step 4 half-etched regions remaining part carries out the etch process operation once more, the metal of described remaining part is all etched away, and make described metal leg back side size less than the positive size of metal leg, form up big and down small metal leg structure
The film operation is taken off at step 12, the positive back side of metal substrate
The photoresist film of metal substrate front and back remainder is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010158778A CN101819958A (en) | 2010-04-21 | 2010-04-21 | Lead frame structure for flip chip and etching-plating production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010158778A CN101819958A (en) | 2010-04-21 | 2010-04-21 | Lead frame structure for flip chip and etching-plating production method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101819958A true CN101819958A (en) | 2010-09-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010158778A Pending CN101819958A (en) | 2010-04-21 | 2010-04-21 | Lead frame structure for flip chip and etching-plating production method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN101819958A (en) |
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2010
- 2010-04-21 CN CN201010158778A patent/CN101819958A/en active Pending
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Open date: 20100901 |