CN101826502B - Island-exposed and submerged island-exposed type lead frame structure and method for sequentially etching and plating - Google Patents
Island-exposed and submerged island-exposed type lead frame structure and method for sequentially etching and plating Download PDFInfo
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- CN101826502B CN101826502B CN2010101636406A CN201010163640A CN101826502B CN 101826502 B CN101826502 B CN 101826502B CN 2010101636406 A CN2010101636406 A CN 2010101636406A CN 201010163640 A CN201010163640 A CN 201010163640A CN 101826502 B CN101826502 B CN 101826502B
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000007747 plating Methods 0.000 title claims abstract description 8
- 238000005530 etching Methods 0.000 title abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 115
- 239000002184 metal Substances 0.000 claims abstract description 115
- 239000005022 packaging material Substances 0.000 claims abstract description 22
- 239000000945 filler Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 76
- 229920002120 photoresistant polymer Polymers 0.000 claims description 39
- 239000012528 membrane Substances 0.000 claims description 15
- 238000003384 imaging method Methods 0.000 claims description 12
- 238000011112 process operation Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005253 cladding Methods 0.000 claims description 4
- -1 Step 4 Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention relates to an island-exposed and submerged island-exposed type lead frame structure and a method for sequentially etching and plating. The lead frame structure comprises two groups of islands (1) and lead pins (2), wherein the two groups of islands (1) comprise a group of first island (1.1) and a group of second island (1.2), the central area of the second island (1.2) sinks, first metal layers (4) are arranged on the fronts of the first island (1.1) and the lead pins (2), second metal layers (5) are arranged on the backs of the first island (1.1), the second island (1.2) and the lead pins (2), plastic packaging materials (3) without fillers are embedded in an area at the periphery of the lead pins (2), areas between the lead pins (2) and the first island (1.1), an area between the first island (1.1) and the second island (1.2), areas between the second island (1.2) and the lead pins (2) and areas between the lead pins (2), and the back sizes of the islands (1) and the lead pins (2) are enabled to be smaller than the front sizes of the islands (1) and the lead pins (2) so as to form a big end up island and lead pin structure. The invention has the advantages that the restraint capability of the plastic packaging materials and the metal pins is huge.
Description
(1) technical field
The present invention relates to a kind of base island exposed and sink base island exposed type lead frame structure and method thereof.Belong to the semiconductor packaging field.
(2) background technology
Traditional lead frame structure mainly contains two kinds:
First kind:
After chemical etching and surface electrical coating are carried out in the front of employing metal substrate, stick the resistant to elevated temperatures glued membrane of one deck at the back side of metal substrate and form the leadframe carrier (as shown in figure 14) that to carry out encapsulation process.
Second kind:
After chemical etching and surface electrical coating are carried out in the front of employing metal substrate, promptly finish the making (as shown in figure 15) of lead frame.Back etched is then carried out at the back side of lead frame again in encapsulation process.
And the not enough point of two kinds of above-mentioned lead frames below in encapsulation process, having existed:
First kind:
1) but the lead frame of this kind must stick the glued membrane of one deck costliness high temperature resistance because of the back side.So directly increased high cost.
2) but also because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, so the load technology in encapsulation process can only be used conduction or nonconducting resin technology, and the technology that can not adopt eutectic technology and slicken solder is fully carried out load, so selectable product category just has bigger limitation.
3) but again because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, and in the ball bonding bonding technology in encapsulation process, because but the glued membrane of this high temperature resistance is a soft materials, so caused the instability of ball bonding bonding parameter, seriously influenced the quality of ball bonding and the stability of production reliability.
4) but again because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, and the plastic package process process in encapsulation process, because the high pressure of plastic packaging relation is easy to cause between lead frame and the glued membrane and infiltrates plastic packaging material, be that the kenel of conduction has become insulation pin (as shown in figure 16) on the contrary because of having infiltrated plastic packaging material and will formerly should belong to metal leg.
Second kind:
The lead frame structure of this kind has carried out etching partially technology in the metal substrate front, though can solve the problem of first kind of lead frame, but because only carried out the work that etches partially in the metal substrate front, and plastic packaging material only envelopes the height of half pin in the plastic packaging process, so the constraint ability of plastic-sealed body and metal leg has just diminished, when if the plastic-sealed body paster is not fine to pcb board, does over again again and heavily paste, with regard to the problem (as shown in figure 17) that is easy to generate pin.
Especially the kind of plastic packaging material is to adopt when filler is arranged, because material is at the environment and the follow-up surface-pasted stress changing relation of production process, can cause metal and plastic packaging material to produce the crack of vertical-type, its characteristic is the high more then hard more crisp more crack that is easy to generate more of proportion of filler.
(3) summary of the invention
The objective of the invention is to overcome above-mentioned deficiency, provide a kind of and reduce that packaging cost, selectable product category are wide, big base island exposed and the sink base island exposed type lead frame structure and the first-engraving last-plating method thereof of constraint ability of good stability, plastic-sealed body and the metal leg of the quality of ball bonding and production reliability.
(3) summary of the invention
The object of the present invention is achieved like this: a kind of base island exposed and base island exposed type lead frame structure of sinking, comprise Ji Dao and pin, described Ji Dao has two groups, one group is first Ji Dao, another group is second Ji Dao, the described second basic island middle section sinks, front at described first Ji Dao and pin is provided with the first metal layer, at described first Ji Dao, the back side of second Ji Dao and pin is provided with second metal level, zone in described pin periphery, zone between the pin and the first basic island, zone between first Ji Dao and the second basic island, zone between zone between second Ji Dao and the pin and pin and the pin is equipped with packless plastic packaging material, described packless plastic packaging material is with periphery, pin bottom, the pin and the first Ji Dao bottom, first Ji Dao and the second Ji Dao bottom, second Ji Dao and pin bottom and pin and pin bottom link into an integrated entity, and make described Ji Dao and pin back side size less than Ji Dao and the positive size of pin, form up big and down small Ji Dao and pin configuration.
Base island exposed and the base island exposed type lead frame first-engraving last-plating method that sinks of the present invention, described method comprises following processing step:
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of metal substrate,
The metal substrate front that utilizes exposure imaging equipment that step 2 is finished the pad pasting operation is carried out exposure imaging and is removed the part photoresist film, exposing the zone that follow-up needs etch partially on the metal substrate,
The positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially,, form Ji Dao and pin simultaneously relatively in the positive half-etched regions that forms depression of metal substrate, described Ji Dao has two groups, one group is first Ji Dao, and another group is second Ji Dao
The film operation is taken off at step 5, the positive back side of metal substrate
The positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed,
In the positive half-etched regions that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material,
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of the metal substrate of finishing the packless soft gap filler operation of full-filling,
The part photoresist film is removed at the front and the back side at metal substrate, exposes the back side of first Ji Dao, second Ji Dao and pin and the front of first Ji Dao and pin,
First Ji Dao, second Ji Dao that exposes in step 8 and the back side of pin plate second metal level, plate the first metal layer in the front of first Ji Dao and pin,
Remove metal substrate back portion photoresist film, with zone between zone, second Ji Dao and the pin of the zone between zone, first Ji Dao and the second basic island between zone, pin and the first basic island of exposing pin periphery, the metal substrate back side, the positive central authorities in the second basic island and the zone between pin and the pin
Be that the metal of step 4 half-etched regions remaining part carries out the etch process operation again at the back side of metal substrate to not being lithographic zone that glued membrane covers; The metal of described remaining part is all etched away; Zone to the positive central authorities in the described second basic island etches partially process operation simultaneously; In the positive half-etched regions that forms depression in the second basic island; Front, basic island middle section is sunk; And make described Ji Dao and pin back side size less than Ji Dao and the positive size of pin; Form up big and down small Ji Dao and pin configuration
The film operation is taken off at step 12, the positive back side of metal substrate
The photoresist film of metal substrate front and back remainder is removed.
The invention has the beneficial effects as follows:
1) but the glued membrane of one deck costliness high temperature resistance need not sticked in the back side of the lead frame of this kind.So directly reduced high cost.
2) but because the glued membrane of one deck high temperature resistance need not sticked in the back side of the lead frame of this kind yet, so the load technology in encapsulation process is except using conduction or nonconducting resin technology, can also adopt the technology of eutectic technology and slicken solder to carry out load, so selectable product category is just wide.
3) but again because the glued membrane of one deck high temperature resistance need not sticked in the back side of the lead frame of this kind, guaranteed the stability of ball bonding bonding parameter, guaranteed the quality of ball bonding and the stability of production reliability.
4) but again because the lead frame of this kind need not stick the glued membrane of one deck high temperature resistance, and the plastic package process process in encapsulation process can not cause between lead frame and the glued membrane fully and infiltrate plastic packaging material.
5) because the zone between described metal leg (pin) and metal leg is equipped with packless soft gap filler, this packless soft gap filler has the filler plastic packaging material to envelope the height of whole metal leg with the routine in the plastic packaging process, so the constraint ability of plastic-sealed body and metal leg just becomes big, do not have the problem that produces pin again.
6) owing to adopted positive method of separating the etching operation with the back side, so in the etching operation, can form the slightly little and big slightly structure of positive basic island size of the size of back side Ji Dao, and slided by the tighter more difficult generation that packless plastic packaging material coated and falling pin with the size that varies in size up and down of a Ji Dao.
(4) description of drawings
Fig. 1～12 are base island exposed and base island exposed each the operation schematic diagram of type lead frame first-engraving last-plating method that sinks of the present invention.
Figure 13 is the base island exposed and base island exposed type lead frame structure schematic diagram that sinks of the present invention.
Figure 14 was for sticked the resistant to elevated temperatures glued membrane figure of one deck operation in the past at the back side of metal substrate.
Figure 15 was for to adopt the front of metal substrate to carry out chemical etching and surface electrical coating flow diagram in the past.
Figure 16 was for formed insulation pin schematic diagram in the past.
Figure 17 pin figure for what formed in the past.
Reference numeral among the figure:
1.1, the second basic island 1.2,1, the first basic island, base island, pin 2, packless plastic packaging material 3, the first metal layer 4, second metal level 5, metal substrate 6, photoresist film 7 and 8, half-etched regions 9, photoresist film 10 and 11.
(5) embodiment
The present invention is base island exposed and the base island exposed type lead frame first-engraving last-plating method that sinks is as follows:
Referring to Fig. 1, get the suitable metal substrate of a slice thickness 6.The material of metal substrate 6 can be carried out conversion according to the function and the characteristic of chip, for example: copper, aluminium, iron, copper alloy or dilval etc.
Referring to Fig. 2, utilize film sticking equipment to stick the photoresist film 7 and 8 that can carry out exposure imaging respectively, to protect follow-up etch process operation at the front and the back side of metal substrate.
Referring to Fig. 3, exposure imaging removal part photoresist film is carried out in the metal substrate front that utilizes exposure imaging equipment that step 2 is finished the pad pasting operation, to expose the zone that follow-up needs etch partially on the metal substrate.
Referring to Fig. 4, the positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially, in the positive half-etched regions 9 that forms depression of metal substrate, form basic island 1 and pin 2 simultaneously relatively, its purpose mainly is to avoid occurring in subsequent job the glue that overflows.Described basic island 1 has two groups, and one group is the first basic island 1.1, and another group is the second basic island 1.2.
The film operation is taken off at step 5, the positive back side of metal substrate
Referring to Fig. 5, the positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed.
Referring to Fig. 6, in the positive half-etched regions 9 that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material 3.
Referring to Fig. 7, utilize film sticking equipment to stick the photoresist film 10 and 11 that can carry out exposure imaging respectively, to protect follow-up metal cladding process operation at the front and the back side of the metal substrate of finishing the packless soft gap filler operation of full-filling.
Referring to Fig. 8, remove the part photoresist film at the front and the back side of metal substrate, purpose is to expose the back side of first Ji Dao, second Ji Dao and pin and the front of first Ji Dao and pin.
Referring to Fig. 9, first Ji Dao, second Ji Dao that exposes in step 8 and the back side of pin plate second metal level 5, plate the first metal layer 4 in the front of first Ji Dao and pin, can be tightr, firm between metal wire and chip region and the routing Nei Jiao district during in order to follow-up bonding wire engage is increased in the conjugation that impels in the encapsulating process between Packed plastic packaging material simultaneously.And the one-tenth branch of metal level can be to adopt golden nickel gold, golden ambrose alloy nickel gold, NiPdAu, golden NiPdAu, nickel gold, silver or tin etc. because of different chip materials.
Referring to Figure 10, remove metal substrate back portion photoresist film, with zone between zone, second Ji Dao and the pin of the zone between zone, first Ji Dao and the second basic island between zone, pin and the first basic island of exposing pin periphery, the metal substrate back side, the positive central authorities in the second basic island and the zone between pin and the pin
Referring to Figure 11, is that the metal of step 4 half-etched regions remaining part carries out the etch process operation once more at the back side of metal substrate to the zone that is not covered by photoresist film, the metal of described remaining part is all etched away, zone to the positive central authorities in the described second basic island etches partially process operation simultaneously, in the positive half-etched regions that forms depression in the second basic island, front, basic island middle section is sunk, and make described basic island 1 and pin 2 back side sizes less than Ji Dao and the positive size of pin, form up big and down small Ji Dao and pin configuration.
The film operation is taken off at step 12, the positive back side of metal substrate
Referring to Figure 12, the photoresist film of metal substrate front and back remainder is removed.
End product is referring to Figure 13: among Figure 13, base island 1, pin 2, packless plastic packaging material 3, the first metal layer 4 and second metal level 5, as seen from Figure 13, base island exposed and the base island exposed type lead frame structure of sinking of the present invention, comprise basic island 1 and pin 2, described basic island 1 has two groups, one group is the first basic island 1.1, another group is the second basic island 1.2, the described second basic island 1.2 middle sections sink, front at the described first basic island 1.1 and pin 2 is provided with the first metal layer 4, on the described first basic island 1.1, the back side of the second basic island 1.2 and pin 2 is provided with second metal level 5, zone in described pin 2 peripheries, zone between the pin 2 and the first basic island 1.1, zone between the first basic island 1.1 and the second basic island 1.2, zone between the second basic island 1.2 and the pin 2 and the zone between pin 2 and the pin 2 are equipped with packless plastic packaging material 3, described packless plastic packaging material 3 is with periphery, pin bottom, pin 2 and 1.1 bottoms, the first basic island, the first basic island 1.1 and 1.2 bottoms, the second basic island, the second basic island 1.2 links into an integrated entity with pin 2 bottoms with pin 2 bottoms and pin 2, and make described Ji Dao and pin back side size less than Ji Dao and the positive size of pin, form up big and down small Ji Dao and pin configuration.
Claims (2)
1. a base island exposed type and the base island exposed type lead frame structure of sinking, comprise Ji Dao (1) and pin (2), it is characterized in that: described Ji Dao (1) has two groups, one group is first Ji Dao (1.1), another group is second Ji Dao (1.2), described second Ji Dao (1.2) middle section sinks, front at described first Ji Dao (1.1) and pin (2) is provided with the first metal layer (4), at described first Ji Dao (1.1), the back side of second Ji Dao (1.2) and pin (2) is provided with second metal level (5), in the peripheral zone of described pin (2), zone between pin (2) and first Ji Dao (1.1), zone between first Ji Dao (1.1) and second Ji Dao (1.2), zone between zone between second Ji Dao (1.2) and the pin (2) and pin (2) and the pin (2) is equipped with packless plastic packaging material (3), described packless plastic packaging material (3) is with periphery, pin bottom, pin (2) and first Ji Dao (1.1) bottom, first Ji Dao (1.1) and second Ji Dao (1.2) bottom, second Ji Dao (1.2) links into an integrated entity with pin (2) bottom with pin (2) bottom and pin (2), and make described two groups of Ji Dao (1) and pin (2) back side size less than two groups of Ji Dao (1) and the positive size of pin (2), form up big and down small Ji Dao and pin configuration.
2. first-engraving last-plating method of making the base island exposed type as claimed in claim 1 and the base island exposed type lead frame structure of sinking is characterized in that described method comprises following processing step:
Step 1, get metal substrate
Step 2, pad pasting operation
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of metal substrate,
Step 3, the positive part photoresist film of removing of metal substrate
The metal substrate front that utilizes exposure imaging equipment that step 2 is finished the pad pasting operation is carried out exposure imaging and is removed the part photoresist film, exposing the zone that follow-up needs etch partially on the metal substrate,
Step 4, metal substrate front etch partially
The positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially,, form Ji Dao and pin simultaneously relatively in the positive half-etched regions that forms depression of metal substrate, described Ji Dao has two groups, one group is first Ji Dao, and another group is second Ji Dao
The film operation is taken off at step 5, the positive back side of metal substrate
The positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed,
Step 6, the packless soft gap filler of the positive half-etched regions full-filling of metal substrate
In the positive half-etched regions that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material,
Step 7, the pad pasting operation of the positive back side of metal substrate
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of the metal substrate of finishing the packless soft gap filler operation of full-filling,
Step 8, removal part photoresist film
The part photoresist film is removed at the front and the back side at metal substrate, exposes the back side of first Ji Dao, second Ji Dao and pin and the front of first Ji Dao and pin,
Step 9, metal cladding
First Ji Dao, second Ji Dao that exposes in step 8 and the back side of pin plate second metal level, plate the first metal layer in the front of first Ji Dao and pin,
Step 10, removal metal substrate back portion photoresist film
Remove metal substrate back portion photoresist film, with zone between zone, second Ji Dao and the pin of the zone between zone, first Ji Dao and the second basic island between zone, pin and the first basic island of exposing pin periphery, the metal substrate back side, the positive central authorities in the second basic island and the zone between pin and the pin
Step 11, the metal substrate back side etch partially
Be that the metal of step 4 half-etched regions remaining part carries out the etch process operation again at the back side of metal substrate to not being lithographic zone that glued membrane covers; The metal of described remaining part is all etched away; Zone to the positive central authorities in the described second basic island etches partially process operation simultaneously; In the positive half-etched regions that forms depression in the second basic island; Front, second basic island middle section is sunk; And make described two groups of Ji Dao and pin back side size less than two groups of Ji Dao and the positive size of pin; Form up big and down small Ji Dao and pin configuration
The film operation is taken off at step 12, the positive back side of metal substrate
The photoresist film of metal substrate front and back remainder is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN2010101636406A CN101826502B (en) | 2010-04-28 | 2010-04-28 | Island-exposed and submerged island-exposed type lead frame structure and method for sequentially etching and plating |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1851915A (en) * | 2006-04-12 | 2006-10-25 | 江苏长电科技股份有限公司 | Flat-face saliant-point type packing base-board for integrated circuit or discrete device |
| CN201060865Y (en) * | 2007-07-15 | 2008-05-14 | 天水华天科技股份有限公司 | Non-basic island lead frame |
| CN101236947A (en) * | 2008-01-25 | 2008-08-06 | 苏州固锝电子股份有限公司 | Semiconductor device with novel package structure |
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| CN101540289B (en) * | 2008-03-19 | 2012-12-19 | 飞思卡尔半导体公司 | Semiconductor integrated circuit package and method and mould for packaging semiconductor integrated circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851915A (en) * | 2006-04-12 | 2006-10-25 | 江苏长电科技股份有限公司 | Flat-face saliant-point type packing base-board for integrated circuit or discrete device |
| CN201060865Y (en) * | 2007-07-15 | 2008-05-14 | 天水华天科技股份有限公司 | Non-basic island lead frame |
| CN101236947A (en) * | 2008-01-25 | 2008-08-06 | 苏州固锝电子股份有限公司 | Semiconductor device with novel package structure |
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