CN1619322A - Tft阵列驱动电流测定方法及装置 - Google Patents
Tft阵列驱动电流测定方法及装置 Download PDFInfo
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Abstract
本发明目的在于高速、高精度地测定TFT阵列像素驱动电流。通过测定TFT阵列像素驱动电流的测定方法加以解决,包括:流到阵列驱动电流线的阵列驱动电流包含像素驱动电流成份与偏置电流成份,且对于复数个像素的一部分或全部的测定像素,包含阵列驱动电流测定步骤,其以特定时间间隔依次测定各测定像素驱动时的上述阵列驱动电流,偏置电流测定步骤,其于未实施阵列驱动电流测定步骤时测定偏置电流成份,偏置电流计算步骤,其根据复数个偏置电流的测定结果从而计算测定像素的阵列电流测定时的偏置电流,以及像素驱动电流计算步骤,其根据阵列电流测定步骤测定结果与偏置电流计算步骤计算结果的差值从而计算复数个像素的各像素的像素驱动电流。
Description
技术领域
本发明涉及一种TFT阵列驱动电流测定方法及装置,尤其涉及一种驱动电流具有补偿成份的TFT阵列驱动电流测定方法及装置。
背景技术
对于用于平面电视、个人电脑用的监视器、移动电话的显示装置等的平面显示面板,要求可对应快速变化的图像且能够再现鲜艳色彩。根据此种要求,近年来使用有响应速度较快的薄膜晶体管(TFT)阵列与显示颜色范围较宽的有机EL组件等自体发光组件的主动型显示面板引人瞩目。
所谓自体发光组件,是依据流向组件的电流量从而产生光线的发光组件。因此,利用有自体发光组件的显示面板中所使用的TFT阵列必须能够控制自体发光组件的驱动电流。故而,自体发光组件用TFT阵列检查,于先前的液晶面板用TFT阵列的测定中,不仅需要测定有无电流,还需要测定电流量或电荷量。
另外,由于以有机EL材料为主的自体发光材料价格昂贵,因而TFT阵列面板检查通常在封入自体发光材料之前进行,仅在通过检查的TFT阵列中封入自体发光材料。然而,于未封入有自体发光材料的状态下,由于不存在驱动的对象故而无驱动电流流过。因此,存有如下一种方法,其设置虚拟负荷电容取代自体发光材料,测定流到此负荷的电流从而检查能否进行电流控制。
图7中表示设有此种负荷电容的代表性自体发光材料用的TFT面板110。TFT面板110包含排列为阵列状的像素120,连接于各像素的闸极线112及数据线111,分别连接于闸极线112及数据线111的移位寄存器115、116,传送亮度信号的亮度信号线113,以及供给像素驱动电流到各像素的阵列驱动电流线114。另外,像素120包含连接有闸极线112及数据线111的选择晶体管121,连接于选择晶体管121的电容器122,于闸电极上连接有电容器122的像素驱动晶体管123,以及连接于像素驱动晶体管123与阵列驱动信号线114且成为自体发光材料替代品的负荷电容124。此负荷电容124可在将自体发光材料封入TFT阵列面板时除去,也可原样保留。
继而,说明TFT面板110的运作概略。移位寄存器115、116分别施加电压到特定闸极线112及数据线111。此时,选择有像素120,其处于施加有电压的闸极线112及数据线111的交叉位置。继而,于亮度信号线113上施加电压,其对应于选择像素120的像素驱动电流。亮度信号通过像素选择电路104传送到所选的数据线111。于选择像素120中,电压施加到选择晶体管121的闸极从而成为ON状态(汲极-源极间成为导通状态),电容器122依据从数据线111所供给的亮度信号而充电到特定电压。于是,像素驱动晶体管123成为ON状态,依据电容器122的电压,电流从阵列驱动电流线114流到负荷电容124。
在此种TFT阵列中,由于阵列驱动电流线114电性连接于所有像素,因此即使由于非选择像素中的漏电流或通过电容器120的残留电位而继续流到像素驱动晶体管123的残留电流等的影响,在未选择所有像素的状态下,阵列驱动电流线114中也不会为零,仍流过有偏置电流。并且,此偏置电流根据TFT阵列的状态而变动。因此,为测定TFT阵列像素驱动电流,则需要从已测定的阵列驱动电流中扣除补偿成份。
如此,至于自阵列驱动电流中去除补偿成份的测定方法,存在测定按照每像素驱动时及非驱动时的阵列驱动电流的方法(参照专利文献1)。图3中表示此方法的代表性序列。首先,选择TFT面板的测定像素(步骤200)。其次,充电电容器122,测定像素驱动时的阵列驱动电流(步骤201)。测定非驱动测定像素时,即电容器122处于放电状态时的阵列驱动电流(补偿成份)(步骤202)。并且,获取驱动时的阵列驱动电流与非驱动时的阵列驱动电流(补偿成份)的差分,求得像素驱动电流(步骤203)。对于TFT面板的所有像素连续性进行此种像素非驱动时及驱动时的测定(步骤204、205)。
图4为表示上述技术测定要点的图。在图中,横轴为时间,纵轴为阵列驱动电流。首个像素的像素驱动电流成为像素驱动时的阵列驱动电流311与像素非驱动时的阵列驱动电流301的差分。同样,第2到第4像素的像素驱动电流为像素驱动时电流312、313、314的电流与像素非驱动时电流302、303、304的电流的差分。如此,通过测定各像素测定后不久的补偿成份,即使在测定中途偏置电流产生变化,也可进行精密测定。
【专利文献1】日本专利特开2002-40074号公报
[发明所欲解决之课题]
然而,如果按照每个像素测定像素驱动时与非驱动时的阵列驱动电流时,那么需要对每个像素进行两次测定,因此存在有耗费测定时间的问题。虽可于数次中间隔一次测定非驱动时的阵列驱动电流,但偏置电流测定期间产生的变动将不会于像素驱动电流的计算中有所反映,因此测定结果的精度减弱。
并且,如果复数个像素驱动时,于依次测定阵列驱动电流的过程中测定偏置电流时,那么各像素间的测定时序产生偏差。图5为表示以相同时间间隔连续测定同一像素时像素驱动电流的测定结果图。于理想性TFT阵列中,像素驱动电流应为固定,而不受测定时序的影响,然而如图可知,在驱动TFT阵列电流中存在有过渡特性,因此如果测定像素的时间间隔不同,那么测定结果中便可能产生误差。此种过渡特性并非限于连续测定同一像素时,也是连续性测定配置为同列或同行等直线状的像素时所产生的现象。由此,为获得正确的测定结果,优选的是以相同时间间隔连续测定排列为直线状的像素。
发明内容
本发明为通过一种TFT阵列驱动电流测定方法从而解决上述课题,该TFT阵列驱动电流测定方法的特征在于:具有配置为阵列状的复数个像素以及供给像素驱动电流到上述复数个像素的各像素阵列驱动电流线,流向上述阵列驱动电流线的阵列驱动电流包含上述像素驱动电流成份与偏置电流成份,且对于上述复数个像素的一部分或全部测定像素,包含阵列驱动电流测定步骤,其以特定时间间隔依次测定上述各测定像素驱动时的上述阵列驱动电流,偏置电流测定步骤,其于未实施上述阵列驱动电流测定步骤时,测定上述偏置电流成份,偏置电流计算步骤,其根据复数个上述偏置电流的测定结果从而计算上述测定像素的阵列电流测定时的上述偏置电流,以及像素驱动电流计算步骤,其根据上述阵列电流测定步骤的测定结果与上述偏置电流计算步骤的计算结果的差值,从而计算上述复数个像素的各像素的上述像素驱动电流。
[发明效果]
通过本发明,可高速、高精度地测定TFT阵列像素驱动电流。
附图说明
图1为作为本发明实施例的像素驱动电流测定方法的流程图。
图2为本发明实施例的像素驱动电流测定装置与TFT阵列的概略图。
图3为先前技术的流程图。
图4为先前技术的阵列驱动电流的波形图。
图5为表示像素驱动电流的过渡特性图。
图6为本发明实施例的阵列驱动电流的波形图。
图7为表示代表性自体发光材料用的TFT面板图。
具体实施方式
[实施例]
以下参照随附图式,就作为本发明优选实施形态的TFT阵列像素驱动电流测定方法加以详细说明。
图2中表示本发明的像素驱动电流测定装置100的概略构成图与TFT阵列110的电路图。像素驱动电流测定装置100包含连接于进行像素选择的移位寄存器115、116的像素选择电路104,连接于亮度信号线113的亮度信号产生电路102,连接于阵列驱动电流线114的作为测定机构的电流计101,连接于电流计101的作为驱动电流供给机构的电源103,以及连接于电流计101的数据处理装置105。于数据处理装置105中,内置有用以记录测定数据的内存与进行数据处理的处理器。于TFT阵列110中,矩阵状配置有3072列768行的像素。TFT阵列110的构成与于先前技术中所说明者相同,故而省略其说明。
继而,根据图1流程图、图2构成图以及图6阵列驱动电流的波形图,将属于TFT阵列的第3列及第4列的像素测定为例,说明运作概略。首先,像素选择装置104选择TFT阵列的第3列第1行的像素120(步骤10)。由于所选择的像素为一列的首个像素(步骤11),故而此时测定流到阵列驱动电流线114的阵列驱动电流,记录于数据处理装置105的内存中(步骤12)。此时流过的电流成为阵列驱动电流的补偿成份401。继而,亮度信号产生电路102输出亮度信号到亮度信号线113。选择像素120的电容器122依据此亮度信号充电到特定电压,像素驱动晶体管123成为ON状态,且对应于亮度信号的像素驱动电流流到阵列驱动电流线114。通过电流计101测定此时的电流410,并记录于数据处理装置105的内存中(步骤13)。测定后,将阵列驱动电流线114的电流设为零,使已充电到电容器122的电荷放电。如此,完成像素120的测定。
由于像素120并非一列的最后像素(步骤14),因此像素选择电路104选择作为下一测定像素的邻接像素125(第3列第2行)(步骤17)。由于像素125并非第3列的首个像素(步骤11),因此像素驱动晶体管无需进行OFF时的偏置电流测定(步骤12),而仅测定驱动时的阵列驱动电流411(步骤13)。测定序列与像素120相同。同样,依次测定属于第3列的像素。如果第3列的像素测定全部完成时(步骤15),那么选择第4列第1行的像素(未图示)(步骤18)。而且,第4列的测定也与第3列的测定相同,仅于测定首个像素(第4列第1行)之前,测定像素非驱动时的阵列驱动电流402(偏置电流)与驱动时的阵列驱动电流420两者(步骤12、13)。其后,与第3列的测定相同,于行方向上依次进行像素测定,但于第2行之后测定像素时,仅测定驱动时的阵列驱动电流。重复此种测定,测定属于TFT阵列上所有列的像素,并将测定结果记录于数据处理装置105的内存中。
完成所有像素测定后,数据处理装置105计算出各像素的偏置电流。属于上述第3列像素的偏置电流以如下方式计算。第3列第1行像素120的偏置电流即为于步骤12中所测定的像素非驱动时的阵列驱动电流401本身。第3列第2行像素125的偏置电流根据第4列中所测定的偏置电流402与第3列中所测定的偏置电流401直线内插后求得。即,根据第4列中所测定的偏置电流402从而获取第3列中所测定的偏置电流401的差分,除以属于第3列的像素数(768),于计算结果上乘以作为偏置电流计算对象的像素行数(2),再加上偏置电流401,将如此所得者设为偏置电流。同样,求得所有像素的偏置电流(步骤16)。最后,从各像素的像素驱动时阵列驱动电流的测定值,扣除于步骤16中所求得的补偿成份,求得各像素的像素驱动电流(步骤19)。
如此,于测定各像素之前无需进行偏置电流的测定,而于每次测定驱动特定像素数时的电流时实施,内插其间测定时的偏置电流从而计算,藉此可减少测定次数,进行高速测定。另外,通过将偏置电流的测定时序设定于各列的最初或最后,可以相等时间间隔依次进行属于该列的像素测定,故而可排除因TFT阵列驱动电流的过渡特性所造成的测定误差,从而进行正确测定。
另外,于本实施例中是按照各列进行测定,但即使按照各行进行测定也可获得同样效果。另外,为使补偿成份非线形增加,也可于TFT阵列中,无需进行如本实施例所示的单纯线形内插,而是根据3点以上的偏置电流测定结果以高次函数进行内插,从而求得各像素的偏置电流。进而,在以相同条件复数次测定具有相同构造的TFT阵列的情形等时,由于可预先掌握偏置电流的变动倾向,因此仅于TFT阵列的首个像素测定时才测定偏置电流,依据此测定值与所掌握的变动倾向从而计算各像素的偏置电流,进而可进一步减少偏置电流的测定次数,缩短测定时间。
Claims (7)
1.一种TFT阵列像素驱动电流测定方法,其特征为
具有配置为阵列状的复数个像素,以及
供给像素驱动电流到上述复数个像素的各像素的阵列驱动电流线,流到上述阵列驱动电流线的阵列驱动电流包含上述像素驱动电流成份与偏置电流成份,且
对于上述复数个像素的一部分或全部测定像素,包含阵列驱动电流测定步骤,其以特定时间间隔依次测定上述各测定像素驱动时的上述阵列驱动电流,
偏置电流测定步骤,其于未实施上述阵列驱动电流测定步骤时,测定上述偏置电流成份,
偏置电流计算步骤,其根据复数个上述偏置电流的测定结果,计算上述测定像素于阵列电流测定时的上述偏置电流,以及
像素驱动电流计算步骤,其根据上述阵列电流测定步骤的测定结果与上述偏置电流计算步骤的计算结果的差值,计算上述复数个像素的各像素的上述像素驱动电流。
2.根据权利要求1所述的TFT阵列像素驱动电流测定方法,其中上述所有测定像素均属于上述TFT阵列的特定列或行。
3.根据权利要求1或2所述的TFT阵列像素驱动电流测定方法,其中于实施上述阵列驱动电流测定步骤前实施上述偏置电流测定步骤。
4.根据权利要求1或2所述的TFT阵列像素驱动电流测定方法,其中于实施上述阵列驱动电流测定步骤后实施上述偏置电流测定步骤。
5.根据权利要求1所述的TFT阵列像素驱动电流测定方法,其中于上述偏置电流计算步骤中,上述偏置电流为根据于上述测定像素的阵列电流测定之前不久与之后不久所测定的偏置电流测定结果,通过进行线形内插从而计算得出。
6.一种TFT阵列驱动电流测定装置,其特征为具有
像素选择信号产生机构,其产生选择TFT阵列的特定像素的信号,驱动电流供给机构,其供给驱动电流到上述TFT阵列的复数个像素,测定机构,其于上述像素的非驱动时测定上述驱动电流,并且以特定时间间隔测定驱动复数个上述像素时的上述驱动电流,以及
数据处理机构,其根据复数个上述非驱动时的上述驱动电流与驱动上述像素时的上述驱动电流,计算出上述像素的驱动电流。
7.根据权利要求6所述的TFT阵列驱动电流测定装置,其中以上述测定机构测定驱动时的上述驱动电流的上述复数个像素配置为直线状。
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JP2007085782A (ja) * | 2005-09-20 | 2007-04-05 | Agilent Technol Inc | 画素駆動電流測定方法および装置 |
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