CN1606155B - 具有柱形结构的管芯及其制造方法 - Google Patents

具有柱形结构的管芯及其制造方法 Download PDF

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CN1606155B
CN1606155B CN2004100347583A CN200410034758A CN1606155B CN 1606155 B CN1606155 B CN 1606155B CN 2004100347583 A CN2004100347583 A CN 2004100347583A CN 200410034758 A CN200410034758 A CN 200410034758A CN 1606155 B CN1606155 B CN 1606155B
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tube core
column
metal level
constructions
different column
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CN1606155A (zh
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金辉·谭
刘世奎
庄汉·沈
巴拉苏布科马尼恩·西瓦格纳姆
罗斯马丽·塔卡普洛特
延元·庞
马·L·南·托伊
林中·信
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Advanpack Solutions Pte Ltd
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Abstract

本发明公开了一种包括衬底和在所述衬底上以某种图案形成的一个或多个柱形结构的管芯以及形成该管芯的方法。

Description

具有柱形结构的管芯及其制造方法
技术领域
本发明一般地涉及半导体芯片互连的制备，更具体地涉及凸起的制备。
背景技术
提高在功率器件(即大量耗能的器件，例如放大器)上的现有半导体器件的性能的市场需求正在增长。
当前的圆形或类似圆形(如六边形或八边形)的焊料凸起(solderbump)互连已经成为改善电学性能以将电流引导至芯片级以及改善下至PCB的散热能力的瓶颈。例如，Advanced Interconnect Technologies 2002年春季刊中的“Advanced Connections”特别介绍了一种柱形凸起(pillarbump)互连技术，其利用周边或阵列倒装芯片焊垫将集成电路(IC)连接至铜引线框。
Chew等的美国专利No.6,550,666B2公开了一种用于在引线框半导体封装上形成倒装芯片的方法。
Kondoh等的美国专利No.5,448,114公开了一种具有周边壁的半导体倒装芯片封装。
美国专利No.6,297,551B1公开了具有改进的EMI特性的集成电路封装。
Chance等的美国专利No.4,430,690公开了一种具有金属浸渍和焊料棒触点的低电感电容器。
发明内容
因此，本发明的目的是提供一种改进的凸起设计方案。其他目的将在下文介绍。
目前我们已经发现以下面的方式可以实现本发明的上述目的以及其他目的。具体地说，管芯(die)包括衬底和一个或多个以某种图案在该衬底上形成的柱形结构。本发明还包括通过提供衬底，并在该衬底上以某种图案形成一个或多个柱形结构而形成管芯的方法。
附图说明
结合附图，参照下面的描述，可以更清楚地理解本发明的特征和优点，其中相同的标号表示类似的或对应的元件、区域和部分，且其中：
图1-7示意性地示出了形成本发明的柱形结构的方法的优选实施例。
图8是在具有本发明的柱形结构的晶片上的管芯的俯视示意图。
图9A和9B分别是图8中虚线圈“9A”和“9B”内的部分。
图10A-10I是另外具有变化的柱形结构/凸起设计/形状的管芯的俯视示意图。
具体实施方式
初始结构
如图1所示，结构10包括至少一个嵌入的金属结构12和上覆介电层14。
结构10优选是硅衬底，并且应理解为可能包括半导体晶片或衬底、在该晶片内形成的有源器件和无源器件、在该晶片表面上形成的导电层和介电层(例如层间多氧化物(inter-poly oxide，IPO)、金属间电介质(IMD)等)。术语“半导体结构”意在包括在半导体晶片内形成的器件和覆于该晶片上的层。
嵌入的金属结构12可以电连接至在结构10内形成的一个或多个半导体器件，并且优选由铝(Al)、铜(Cu)或金(Au)组成，更优选由铝(Al)组成，这将在下文用于说明的目的。
上覆介电层14优选由氮化物、氮化硅(Si3N4)、氧化硅(SiO2)或聚酰亚胺构成，并且更优选由氮化硅构成，这将在下文用于说明的目的。
如需要，可以对图1的结构进行清洗。
金属层15的形成——图2
如图2所示，金属层15在SiN层14上形成。金属层15优选通过溅射形成。
金属层15被形成/覆盖在整个晶片表面上。金属层15优选包括下金属层16和上金属层18。下金属层16可以是金属阻挡层，并且优选是钛(Ti)或TiW，更优选是Ti。上金属层18优选是铜(Cu)。
掩模层20的形成——图3
如图3所示，掩模层20在金属层15上形成。掩模层20优选由光刻胶组成。
光刻胶层20的图案化——图4
如图4所示，光刻胶层20然后被图案化以形成图案化的光刻胶层20’，该光刻胶层20’具有暴露Cu层18的一部分24的开口22。开口22形成的形状根据柱形结构34的形状来选定。例如，如图所示，开口22是长方形，但是也可以是圆形、环状、棒状或齿状以及其他形状。
在开口22内镀覆金属层26——图5
如图5所示，柱形金属层26在开口22内的Cu层18的暴露部分24上形成，厚度优选约60-120μm，更优选约70-100μm。柱形金属层26优选通过镀覆来形成。柱形金属层26将具有为柱形结构34所选择的形状，例如这些图中所具体示出的长方形，或者圆形、环状、棒状、壁状或齿状或其他形状。
柱形金属层26是无铅的，优选由铜(Cu)构成。柱形金属层26可以涂覆氧化物或另一种诸如铬、镍等的材料。
可选的焊料层28被形成/镀覆在Cu柱形层26上。可选的焊料层28可以与图案化的光刻胶层20’的顶部表面大致等高，并且优选地可以超过约5μm。焊料层28优选由(1)共晶物，约60-70％锡和约30-40％铅(Pb)；(2)共晶物，约63％锡和约37％铅(Pb)；(3)无铅物，约99-100％锡和Sn3.5Ag；或者(4)无铅物，100％锡组成。并且更优选由(2)共晶物，约63％锡和约37％铅(Pb)；或(4)无铅物，100％锡组成。
图案化的掩模层20’的移除——图6
如图6所示，余下的图案化的掩模/光刻胶层20’优选通过剥离从图5的结构中被移除，以暴露Cu柱形层26/焊料层28外侧的Cu层15的部分30。
Cu层15的暴露部分30的蚀刻——图7
如图7所示，Cu柱形层26/焊料层28外侧的Cu层15的暴露部分30优选通过蚀刻被移除，以暴露Cu柱形层26/焊料层28外侧的上覆SiN层14的部分32。
Cu柱形层26/焊料层28的回流(reflow)——图7
还是如图7所示，对晶片进行回流，以使可选的焊料/覆层28回流以形成本发明的柱形结构34。铜柱形层26在焊料覆层28或无铅焊料覆层28的回流温度下不会熔化。覆层28是将管芯/CSP与衬底/引线框/PCB连接的部分。
回流后柱形结构34的总高度优选约60-150μm，更优选约100μm。
柱形结构34的焊料28’封住了Cu柱形层26的顶部，而其侧壁是暴露的。
注意该凸起的高度在管芯内是可以变化的。
柱形结构34用来连接管芯和管芯，管芯和引线框以及/或者管芯和衬底。
管芯设计实例100——图8和9
图8示出了由管芯周边所围住的采用本发明的柱形结构34的设计的管芯设计实例100。如图8所示，管芯100可以包括形状可变化的柱形结构/凸起34。
管芯周边可以用在表面声波(SAW)器件，并提供RF屏蔽，用于降低噪声、载流量和密封屏蔽，并且可以用在RF器件、功率器件和MEM(微型电子机械)中，用于噪声隔离和载流量。
图9A和9B分别是图8中虚线圈“9A”和“9B”内的部分。图9A示出了柱形结构34实例的长、宽以及长方形柱形结构34的间隔。如图9A所示，本发明的柱形结构34可以大致为长方形，长度可以为789.0μm-1289.0μm；宽度42优选为约289.0μm；长度40’和40”分别优选为约789.0μm或1289.0μm；并且在纵向上中心对中心的间隔约500μm，端对端的间隔约211.0μm。如图9B所示，柱形结构34可以是直径约289.0μm的圆形，并且间隔约500μm。
图10A-10I示出了具有其他可允许柱形结构/凸起34的形状和设计的管芯100’。例如，如图10D所示，柱形结构/凸起34可以是圆形的，并且还可以是如管芯100’的中心所示的方形壁状结构34。
例如，本发明的柱形结构可以用在表面声波(SAW)器件和电源开关以及MEM中。
本发明的优点
本发明的一个或多个实施例的优点包括：
1)本发明的柱形结构可以传导更高的电流；
2)使用本发明的柱形结构，板级可靠性更高；
3)该柱形结构的C4(control collapse chip connect，控制塌陷芯片连接)特征保持了管芯和封装之间所需的远离；
4)本发明的柱形结构提供了改进的散热能力；并且
5)在给定的焊垫开口中更大的金属/铜面积提供了更好的可靠性。
虽然这里已经说明并描述了本发明的具体实施例，但并非意在限制本发明。

Claims (48)

1.一种管芯，包括：
衬底；和
在所述衬底上以某种图案形成的两种或更多种不同的柱形结构，所述两种或更多种不同的柱形结构中的至少一个包括下部柱形金属层部分和上部焊料材料部分，所述上部焊料材料部分处于所述下部柱形金属层部分的上方并仅与所述下部柱形金属层部分的上表面牢固接触，
其中，在所述衬底和所述至少一个柱形结构之间设置有金属层，所述金属层包括下金属阻挡层和上金属层，
其中，所述下部柱形金属层部分在用于形成两种或者更多种不同的柱形结构的回流过程中不熔融，
其中，所述两种或更多种不同的柱形结构中的至少一个具有长方形、环形、壁状或齿状形状。
2.如权利要求1所述的管芯，其中所述两种或更多种不同的柱形结构中的至少之一具有长789.0-1289.0μm，宽289.0μm的长方形形状。
3.如权利要求1所述的管芯，其中所述两种或更多种不同的柱形结构中的至少之一具有长789.0μm，宽289.0μm的长方形形状。
4.如权利要求1所述的管芯，其中所述两种或更多种不同的柱形结构中的至少之一具有长1289.0μm，宽289.0μm的长方形形状。
5.如权利要求1所述的管芯，其中所述两种或更多种不同的柱形结构中的至少之一具有长方形形状，并且所述两种或更多种不同的柱形结构在纵向上中心对中心间隔500μm，端对端间隔211.0μm。
6.如权利要求1所述的管芯，其中所述柱形结构图案包括一系列的行和列。
7.如权利要求1所述的管芯，其中所述柱形结构图案包括一系列的行和列；以所述一系列的行和列排列的所述柱形结构在所述列中纵向上中心对中心间隔500μm，端对端间隔211.0μm。
8.如权利要求1所述的管芯，其中所述两种或更多种不同的柱形结构中的至少之一包括至少一个壁状柱形结构。
9.如权利要求1所述的管芯，其中所述两种或更多种不同的柱形结构中的至少之一包括至少一个形成方形的壁状柱形结构。
10.如权利要求1所述的管芯，其中所述下部柱形金属层部分由铜构成。
11.如权利要求1所述的管芯，其中下部柱形金属层部分由涂覆有氧化物、铬或镍的铜构成。
12.如权利要求1所述的管芯，其中所述所述上部焊料材料部分由：
60-70％锡和30-40％铅、
63％锡和37％铅、
99％锡和Sn3.5Ag、或者
100％锡构成。
13.如权利要求1所述的管芯，其中所述上部焊料材料部分由：
63％锡和37％铅、或者
100％锡构成。
14.如权利要求1所述的管芯，其中所述柱形结构每一个的总高度60-150μm。
15.如权利要求1所述的管芯，其中所述柱形结构每一个的总高度100μm。
16.如权利要求1所述的管芯，其中所述管芯用在表面声波器件和微型电子机械器件中。
17.一种管芯，包括：
衬底；和
在所述衬底上以某种图案形成的两种或更多种不同的柱形结构，所述两种或更多种不同的柱形结构具有长方形、环形、壁状或齿状形状，所述两种或更多种不同的柱形结构中的至少一个包括下部柱形金属层部分和上部焊料材料部分，所述上部焊料材料部分处于所述下部柱形金属层部分的上方并仅与所述下部柱形金属层部分的上表面牢固接触，
其中，在所述衬底和所述至少一个柱形结构之间设置有金属层，所述金属层包括下金属阻挡层和上金属层，
其中，所述下部柱形金属层部分在用于形成两种或者更多种不同的柱形结构的回流过程中不熔融。
18.如权利要求17所述的管芯，其中所述两种或更多种不同的柱形结构中的至少之一具有长789.0-1289.0μm，宽289.0μm的长方形形状。
19.如权利要求17所述的管芯，其中所述两种或更多种不同的柱形结构中的至少之一具有长789.0μm，宽289.0μm的长方形形状。
20.如权利要求17所述的管芯，其中所述两种或更多种不同的柱形结构中的至少之一具有长1289.0μm，宽289.0μm的长方形形状。
21.如权利要求17所述的管芯，其中所述两种或更多种不同的柱形结构中的至少之一具有长方形形状，并且所述两种或更多种不同的柱形结构在纵向上中心对中心间隔500μm，端对端间隔211.0μm。
22.如权利要求17所述的管芯，其中所述柱形结构图案包括一系列的行和列。
23.如权利要求17所述的管芯，其中所述柱形结构图案包括一系列的行和列；以所述一系列的行和列排列的所述柱形结构在所述列中纵向上中心对中心间隔500μm，端对端间隔211.0μm。
24.如权利要求17所述的管芯，其中所述两种或更多种不同的柱形结构包括至少一个壁状柱形结构。
25.如权利要求17所述的管芯，其中所述两种或更多种不同的柱形结构包括至少一个形成方形的壁状柱形结构。
26.如权利要求17所述的管芯，其中下部柱形金属层部分由铜构成。
27.如权利要求17所述的管芯，其中所述下部柱形金属层部分由涂覆有氧化物、铬或镍的铜构成。
28.如权利要求17所述的管芯，其中所述上部焊料材料部分由：
60-70％锡和30-40％铅、
63％锡和37％铅、
99％锡和Sn3.5Ag、或者
100％锡构成。
29.如权利要求17所述的管芯，其中所述上部焊料材料部分由：
63％锡和37％铅、或者
100％锡构成。
30.如权利要求17所述的管芯，其中所述柱形结构每一个的总高度60-150μm。
31.如权利要求17所述的管芯，其中所述柱形结构每一个的总高度100μm。
32.如权利要求17所述的管芯，其中所述管芯用在表面声波器件和微型电子机械器件中。
33.一种形成管芯的方法，包括下述步骤：
提供衬底；以及
在所述衬底上以某种图案形成两种或更多种不同的柱形结构，所述两种或更多种不同的柱形结构中的至少一个包括下部柱形金属层部分和上部焊料材料部分，所述上部焊料材料部分处于所述下部柱形金属层部分的上方并仅与所述下部柱形金属层部分的上表面牢固接触，
其中，在所述衬底和所述至少一个柱形结构之间设置有金属层，所述金属层包括下金属阻挡层和上金属层，
其中，所述下部柱形金属层部分在用于形成两种或者更多种不同的柱形结构的回流过程中不熔融，其中，所述两种或更多种不同的柱形结构中的至少一个具有长方形、环形、壁状或齿状的形状。
34.如权利要求33所述的方法，其中所述两种或更多种不同的柱形结构中的至少之一具有长789.0-1289.0μm，宽289.0μm的长方形形状。
35.如权利要求33所述的方法，其中所述两种或更多种不同的柱形结构中的至少之一具有长789.0μm，宽289.0μm的长方形形状。
36.如权利要求33所述的方法，其中所述两种或更多种不同的柱形结构中的至少之一具有长1289.0μm，宽289.0μm的长方形形状。
37.如权利要求33所述的方法，其中所述两种或更多种不同的柱形结构中的至少之一具有长方形形状，并且所述两种或更多种不同的柱形结构在纵向上中心对中心间隔500μm，端对端间隔211.0μm。
38.如权利要求33所述的方法，其中所述柱形结构图案包括一系列的行和列。
39.如权利要求33所述的方法，其中所述柱形结构图案包括一系列的行和列；以所述一系列的行和列排列的所述柱形结构在所述列中纵向上中心对中心间隔500μm，端对端间隔211.0μm。
40.如权利要求33所述的方法，其中所述两种或更多种不同的柱形结构中的至少之一包括至少一个壁状柱形结构。
41.如权利要求33所述的方法，其中所述两种或更多种不同的柱形结构中的至少之一包括至少一个形成方形的壁状柱形结构。
42.如权利要求33所述的方法，其中所述下部柱形金属层部分由铜构成。
43.如权利要求33所述的方法，其中所述下部柱形金属层部分由涂覆有氧化物、铬或镍的铜构成。
44.如权利要求33所述的方法，其中所述上部焊料材料部分由：
60-70％锡和30-40％铅、
63％锡和37％铅、
99％锡和Sn3.5Ag、或者
100％锡构成。
45.如权利要求33所述的方法，其中所述上部焊料部分由：
63％锡和37％铅、或者
100％锡构成。
46.如权利要求33所述的方法，其中所述柱形结构每一个的总高度60-150μm。
47.如权利要求33所述的方法，其中所述柱形结构每一个的总高度100μm。
48.如权利要求33所述的方法，其中所形成的管芯用在表面声波器件和微型电子机械器件中。
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CN1606155A (zh) 2005-04-13
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US20050077624A1 (en) 2005-04-14
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