CN1599081A - 浮栅闪存场效应晶体管 - Google Patents
浮栅闪存场效应晶体管 Download PDFInfo
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- CN1599081A CN1599081A CN 200410009435 CN200410009435A CN1599081A CN 1599081 A CN1599081 A CN 1599081A CN 200410009435 CN200410009435 CN 200410009435 CN 200410009435 A CN200410009435 A CN 200410009435A CN 1599081 A CN1599081 A CN 1599081A
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- grid
- effect transistor
- floating boom
- floating gate
- gate flash
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2004100094359A CN100479193C (zh) | 2004-08-17 | 2004-08-17 | 浮栅闪存场效应晶体管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100094359A CN100479193C (zh) | 2004-08-17 | 2004-08-17 | 浮栅闪存场效应晶体管 |
Publications (2)
Publication Number | Publication Date |
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CN1599081A true CN1599081A (zh) | 2005-03-23 |
CN100479193C CN100479193C (zh) | 2009-04-15 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2004100094359A Expired - Fee Related CN100479193C (zh) | 2004-08-17 | 2004-08-17 | 浮栅闪存场效应晶体管 |
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CN (1) | CN100479193C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101416281B (zh) * | 2005-12-14 | 2012-03-21 | 飞思卡尔半导体公司 | 具有存储层的背栅半导体器件及其制造方法 |
US8350602B2 (en) | 2008-08-25 | 2013-01-08 | Seoul National University Research & Development Business Foundation | Reconfigurable semiconductor device |
CN113921612A (zh) * | 2021-10-09 | 2022-01-11 | 广东省大湾区集成电路与系统应用研究院 | 一种背栅调制器件及其制备方法、存储器、逻辑器件 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3538399A (en) * | 1968-05-15 | 1970-11-03 | Tektronix Inc | Pn junction gated field effect transistor having buried layer of low resistivity |
JPS6437057A (en) * | 1987-07-15 | 1989-02-07 | Ibm | Thin film field effect transistor |
JPH11345495A (ja) * | 1998-06-01 | 1999-12-14 | Nec Corp | 半導体記憶装置 |
-
2004
- 2004-08-17 CN CNB2004100094359A patent/CN100479193C/zh not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101416281B (zh) * | 2005-12-14 | 2012-03-21 | 飞思卡尔半导体公司 | 具有存储层的背栅半导体器件及其制造方法 |
US8350602B2 (en) | 2008-08-25 | 2013-01-08 | Seoul National University Research & Development Business Foundation | Reconfigurable semiconductor device |
CN101661959B (zh) * | 2008-08-25 | 2013-04-17 | 首尔大学校产学协力团 | 可重构的半导体器件 |
CN113921612A (zh) * | 2021-10-09 | 2022-01-11 | 广东省大湾区集成电路与系统应用研究院 | 一种背栅调制器件及其制备方法、存储器、逻辑器件 |
WO2023056798A1 (zh) * | 2021-10-09 | 2023-04-13 | 广东省大湾区集成电路与系统应用研究院 | 一种背栅调制器件及其制备方法、存储器、逻辑器件 |
Also Published As
Publication number | Publication date |
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CN100479193C (zh) | 2009-04-15 |
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ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20110215 Owner name: BEIJING UNIV. |
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Free format text: CORRECT: ADDRESS; FROM: 100871 NO. 5, YIHEYUAN ROAD, HAIDIAN DISTRICT, BEIJING TO: 201203 NO. 18, ZHANGJIANG ROAD, PUDONG NEW DISTRICT, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20110215 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Peking University Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090415 Termination date: 20180817 |
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CF01 | Termination of patent right due to non-payment of annual fee |