CN100479193C - 浮栅闪存场效应晶体管 - Google Patents
浮栅闪存场效应晶体管 Download PDFInfo
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- CN100479193C CN100479193C CNB2004100094359A CN200410009435A CN100479193C CN 100479193 C CN100479193 C CN 100479193C CN B2004100094359 A CNB2004100094359 A CN B2004100094359A CN 200410009435 A CN200410009435 A CN 200410009435A CN 100479193 C CN100479193 C CN 100479193C
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- grid
- effect transistor
- floating boom
- floating gate
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Abstract
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Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2004100094359A CN100479193C (zh) | 2004-08-17 | 2004-08-17 | 浮栅闪存场效应晶体管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2004100094359A CN100479193C (zh) | 2004-08-17 | 2004-08-17 | 浮栅闪存场效应晶体管 |
Publications (2)
Publication Number | Publication Date |
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CN1599081A CN1599081A (zh) | 2005-03-23 |
CN100479193C true CN100479193C (zh) | 2009-04-15 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2004100094359A Expired - Fee Related CN100479193C (zh) | 2004-08-17 | 2004-08-17 | 浮栅闪存场效应晶体管 |
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CN (1) | CN100479193C (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7679125B2 (en) * | 2005-12-14 | 2010-03-16 | Freescale Semiconductor, Inc. | Back-gated semiconductor device with a storage layer and methods for forming thereof |
US7968935B2 (en) | 2008-08-25 | 2011-06-28 | Seoul National University Research & Development Business Foundation | Reconfigurable semiconductor device |
CN113921612A (zh) * | 2021-10-09 | 2022-01-11 | 广东省大湾区集成电路与系统应用研究院 | 一种背栅调制器件及其制备方法、存储器、逻辑器件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3538399A (en) * | 1968-05-15 | 1970-11-03 | Tektronix Inc | Pn junction gated field effect transistor having buried layer of low resistivity |
EP0299185A2 (en) * | 1987-07-15 | 1989-01-18 | International Business Machines Corporation | Thin film field effect transistor |
TW424327B (en) * | 1998-06-01 | 2001-03-01 | Nippon Electric Co | Semiconductor memory device equipped with access circuit for performing access control of flash memory |
-
2004
- 2004-08-17 CN CNB2004100094359A patent/CN100479193C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3538399A (en) * | 1968-05-15 | 1970-11-03 | Tektronix Inc | Pn junction gated field effect transistor having buried layer of low resistivity |
EP0299185A2 (en) * | 1987-07-15 | 1989-01-18 | International Business Machines Corporation | Thin film field effect transistor |
TW424327B (en) * | 1998-06-01 | 2001-03-01 | Nippon Electric Co | Semiconductor memory device equipped with access circuit for performing access control of flash memory |
Also Published As
Publication number | Publication date |
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CN1599081A (zh) | 2005-03-23 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20110215 Owner name: BEIJING UNIV. |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100871 NO. 5, YIHEYUAN ROAD, HAIDIAN DISTRICT, BEIJING TO: 201203 NO. 18, ZHANGJIANG ROAD, PUDONG NEW DISTRICT, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20110215 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Peking University Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090415 Termination date: 20180817 |