CN1595660A - 一种体硅mos晶体管及其制作方法 - Google Patents
一种体硅mos晶体管及其制作方法 Download PDFInfo
- Publication number
- CN1595660A CN1595660A CN 200410009320 CN200410009320A CN1595660A CN 1595660 A CN1595660 A CN 1595660A CN 200410009320 CN200410009320 CN 200410009320 CN 200410009320 A CN200410009320 A CN 200410009320A CN 1595660 A CN1595660 A CN 1595660A
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- Prior art keywords
- gate electrode
- silicon
- dielectric layer
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- gate
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 50
- 239000010703 silicon Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000000407 epitaxy Methods 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 230000000802 nitrating effect Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910015900 BF3 Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical group FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200410009320XA CN100479188C (zh) | 2004-07-09 | 2004-07-09 | 一种体硅mos晶体管的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200410009320XA CN100479188C (zh) | 2004-07-09 | 2004-07-09 | 一种体硅mos晶体管的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1595660A true CN1595660A (zh) | 2005-03-16 |
CN100479188C CN100479188C (zh) | 2009-04-15 |
Family
ID=34662439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410009320XA Expired - Lifetime CN100479188C (zh) | 2004-07-09 | 2004-07-09 | 一种体硅mos晶体管的制作方法 |
Country Status (1)
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CN (1) | CN100479188C (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103208452A (zh) * | 2012-01-12 | 2013-07-17 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管及其制造方法 |
CN103456767A (zh) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | Mos结构及其制造方法 |
CN103811420A (zh) * | 2012-11-08 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制备方法 |
WO2015051561A1 (zh) * | 2013-10-13 | 2015-04-16 | 中国科学院微电子研究所 | 一种mosfet结构及其制造方法 |
CN109585301A (zh) * | 2014-10-22 | 2019-04-05 | 意法半导体公司 | 用于包括具有低接触电阻的衬垫硅化物的集成电路制作的工艺 |
CN113555444A (zh) * | 2021-07-06 | 2021-10-26 | 浙江芯国半导体有限公司 | 一种高质量氧化镓半导体器件及制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9076817B2 (en) * | 2011-08-04 | 2015-07-07 | International Business Machines Corporation | Epitaxial extension CMOS transistor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6239472B1 (en) * | 1998-09-01 | 2001-05-29 | Philips Electronics North America Corp. | MOSFET structure having improved source/drain junction performance |
US6403485B1 (en) * | 2001-05-02 | 2002-06-11 | Chartered Semiconductor Manufacturing Ltd | Method to form a low parasitic capacitance pseudo-SOI CMOS device |
US6946696B2 (en) * | 2002-12-23 | 2005-09-20 | International Business Machines Corporation | Self-aligned isolation double-gate FET |
-
2004
- 2004-07-09 CN CNB200410009320XA patent/CN100479188C/zh not_active Expired - Lifetime
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103208452A (zh) * | 2012-01-12 | 2013-07-17 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管及其制造方法 |
CN103208452B (zh) * | 2012-01-12 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管及其制造方法 |
CN103456767A (zh) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | Mos结构及其制造方法 |
CN103811420A (zh) * | 2012-11-08 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制备方法 |
CN103811420B (zh) * | 2012-11-08 | 2016-12-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制备方法 |
WO2015051561A1 (zh) * | 2013-10-13 | 2015-04-16 | 中国科学院微电子研究所 | 一种mosfet结构及其制造方法 |
US9608064B2 (en) | 2013-10-13 | 2017-03-28 | Institute of Microelectronics, Chinese Academy of Sciences | MOSFET structure and method for manufacturing same |
CN109585301A (zh) * | 2014-10-22 | 2019-04-05 | 意法半导体公司 | 用于包括具有低接触电阻的衬垫硅化物的集成电路制作的工艺 |
CN109585301B (zh) * | 2014-10-22 | 2022-01-04 | 意法半导体公司 | 一种具有低接触电阻衬垫硅化物的集成电路及其制作方法 |
CN113555444A (zh) * | 2021-07-06 | 2021-10-26 | 浙江芯国半导体有限公司 | 一种高质量氧化镓半导体器件及制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100479188C (zh) | 2009-04-15 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA |
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Effective date of registration: 20101130 Address after: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Co-patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |
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Granted publication date: 20090415 |