CN1582494A - 在导热散热器上具有润湿层的电子组件 - Google Patents

在导热散热器上具有润湿层的电子组件 Download PDF

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CN1582494A
CN1582494A CNA028218736A CN02821873A CN1582494A CN 1582494 A CN1582494 A CN 1582494A CN A028218736 A CNA028218736 A CN A028218736A CN 02821873 A CN02821873 A CN 02821873A CN 1582494 A CN1582494 A CN 1582494A
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wetting layer
electronic building
building brick
thermal interface
tube core
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CN100440491C (zh
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卡尔·德佩克
萨比纳·乌勒
托马斯·菲茨杰拉德
克里斯托弗·戴顿
费伊·华
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Intel Corp
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Abstract

本发明描述了一种电子组件，包括：管芯(40)，该管芯(40)具有形成于其中的集成电路；导热散热器(16)和位于管芯和该散热器之间的铟(14)。散热器(16)具有镍层(22)。金层(24)被形成在镍层(22)上，并提供较镍更好的铟的润湿。提供了铟(14)和散热器(16)之间的更好的结构连接，特别是在热循环期间。

Description

在导热散热器上具有润湿层的电子组件
技术领域
本发明涉及具有半导体管芯(die)的一类电子组件，其中所述半导体管芯通过界面材料被热耦合到导热散热器上。
背景技术
集成电路被制造在半导体晶片上，这些半导体晶片随后被切割或“划片”成单个的管芯。这样的管芯可在集成电路上具有焊接凸点(solderbump)接触。焊接凸点接触被朝下置于封装衬底的接触盘(contact pad)上，并在热回流工艺中被固定。通过焊接凸点接触，可以向集成电路和从集成电路提供电信号。集成电路的运行使其发热。热被传导至此管芯的上表面，并且必须通过传导或对流将热带走，以便为了维持集成电路的功能完整性的目的而使集成电路的温度保持在预定水平之下。
通常将散热器置于管芯上方，并且通过诸如导热油脂之类的热界面材料使散热器热耦合到管芯上。导热油脂将最小的应力从散热器传递到管芯上，但是，导热油脂具有相对低的导热性，因此对从管芯到散热器的热传递设置了明显的热障碍。
附图说明
参考附图，通过示例描述了本发明，其中：
图1是在最终组装之前电子组件的部件的横截面侧视图；
图2是在电子组件的部件的最终组装后，与图1相类似的图；和
图3是更详细地图示了图2的电子组件的部件的横截面侧视图。
具体实施方式
附图中的图1图示了在最终组装之前电子组件10的部件，包括半导体封装子组件12、预成型纯铟14、散热器子组件16以及粘合剂18。
散热器子组件16包括铜的主散热结构20、镀覆在主散热结构20上的薄的镍层22以及镀覆在镍层22上的金层24。
主散热结构20包括水平散热板28和侧边30，其中侧边30从散热板28的边缘向下延伸。存在四个这样的侧边30，这四个侧边30和散热板28一起形成倒扣的罩，该罩具有内腔32，并向底部开口。主散热结构20的所有表面镀覆有镍层22。镍层22因此也被镀覆在散热板28的下表面上。
金层24被选择性地镀覆在镍层22的一个区域上，并位于散热板28的下表面上。金层24可以通过如下的操作形成，即首先掩蔽镍层22不需要金层24的表面，在镍层22的暴露的表面上进行镀覆，并且随后去除镍层22被防止镀覆金层24的表面上的任何掩蔽材料。金层24具有最佳的厚度，对此将在下面进行讨论。
半导体封装子组件12包括封装衬底36和半导体管芯38。封装衬底36一般主要由有机塑料材料制成。半导体管芯38包括半导体衬底40，该半导体衬底40在其下表面中具有金属线和半导体电子元件的集成电路42。
半导体管芯38还包括形成在集成电路42的下表面上的焊接凸点44。一般根据公知的可控塌陷芯片连接(C4)工艺形成焊接凸点44。焊接凸点44在公知的回流工艺中在结构上被固定到半导体衬底40上。焊接凸点44也被电连接到集成电路42上，使得通过焊接凸点44可以向和从集成电路42提供信号。半导体管芯38还包括形成在半导体衬底40上表面上的多个层的堆叠46。堆叠46包括钛、镍钒合金和金层，它们被依次沉积在彼此的顶部。预成型铟14约1mm厚，具有约80W/mK的导热率，并位于堆叠46的金层的上表面上。
粘合剂18位于侧边30的下表面。散热器子组件16位于半导体管芯38和预成型铟14的上方。粘合剂18的下表面接触封装衬底36的上表面。金层24的下表面接触预成型铟14的上表面。
然后将夹具(没有示出)置于电子组件10的部件的上方，并将电子组件10和夹具一起送入回流炉。电子组件10的部件在回流炉中被加热，并随后予以冷却。回流炉将电子组件10的部件加热到例如约170℃的温度。这样的温度高于纯铟的约157℃的熔融温度，使得铟14熔融。
图2图示了在对其予以冷却后的电子组件10。对铟14的冷却导致其固化。通过加热和冷却铟14，铟被“焊接”到金层24以及堆叠46的金层上。铟14由此形成这样的一个层，该层在结构上将堆叠46固定到金层24上，且提供了将热从堆叠46传导到金层24的高效通路。侧边30也通过粘合剂18被固定到衬底36上。应该注意到，因为金层没有被加热到其熔融温度以上，所以不发生润湿。金的熔融温度为1065℃。虽然组件被加热到170℃并且将温度倒回而不超过170℃，但是金层24由此促进了润湿。
金层24的目的是起到用于铟14的润湿层的作用。金是比镍更好的润湿层，因此这是为什么不将铟14直接紧靠镍22的原因。通过使用金层24形成了更好的结构和热连接。镍层22在本发明中的目的是起到扩散阻挡层的作用，以防止金层24和主散热器结构20的铜之间的交叉扩散。
图3是更详细地示出了图2的组件10的部件的横截面图。金层24中的一部分和铟14中的一部分被消耗来形成剩余金层24和剩余铟14之间的AuIn2金属间化合物层50。虽然可以并可能形成其他的Au-In金属间化合物，但是优选地形成AuIn2金属间化合物。由堆叠46的金层和铟14形成类似的AuIn2金属间化合物层52。在可靠性测试中对电子组件10进行依次交替地加热和冷却。已经发现当金层24在被放入回流炉中之前约为3微米厚时，在三个层46、14和24中检测到明显的热老化之前，可靠性测试允许进行50次热循环。如果没有金层24，则在第一次循环中发生脱层。同时还发现，当金层约为0.2微米厚时，仅在200次循环后，常常仅在300次循环后，出现裂纹。当镀覆较薄的金层时，与在镀覆较厚的金层的时候相比生成更薄的金属间化合物层50。与更厚的金属间化合物层相比，更薄的金属间化合物层在给定的可靠性测试中可以承受更多次数的热循环。理想地，金层24应该基本没有孔隙。已经发现，像这样的0.02微米厚的均匀金层可以被形成为基本无孔隙。
所使用的可靠性测试如下：
将温度急剧上升到125℃，并在此温度下保持15分钟。然后将温度降低至-55℃并在此温度下保持15分钟以完成一次循环。然后，温度被再一次升高到125℃，开始第二次循环。第二次循环其余的操作与第一次循环相同，并且随后的循环与第一次循环相同。
再次参考图2，金层24位于铟14的左边和右边的部分尚没有与铟14反应，因此它们保持如图1所示的厚度。
可以使用其他的材料来代替金层24，以提供镍层22上方的润湿层。这样的材料包括锡和诸如银和钯之类的贵金属，或者这些金属的组合。锡、银和钯分别具有2260℃、961℃和1552℃熔融温度。发现，具有约0.2微米或者更小厚度的银是最佳的。也可以用诸如铝的其他材料制备主散热结构20，并在铝上镀镍。除纯铟14之外的其他材料也是可以的，然而这样的材料优选地具有至少35W/mK的导热率，但是，更加优选地具有至少70W/mK的导热率。
在使用中，电信号通过焊接凸点44在封装衬底36和集成电路42之间传输。集成电路42的操作导致半导体管芯38发热。热从半导体管芯38通过铟14传递到散热器子组件16。热通过散热器子组件16横向传播，并从散热器子组件16的上表面被传导或对流。
虽然已经描述了并在附图中示出了特定的示例性实施例，但是应该理解这样的实施例仅仅是说明性的，而不是对本发明的限制，并且本发明不限于示出的和描述的具体构造和布置，因为本领域技术人员可以想到多种修改。

Claims (29)

1.一种构造电子组件的方法，包括：
在导热散热器表面上形成非镍的材料的润湿层；
将与所述润湿层不同材料的金属热界面材料紧靠所述润湿层的表面放置；
将管芯紧靠所述热界面材料放置，所述管芯具有形成于其中的集成电路；
加热所述金属热界面材料，以使其熔融，所述润湿层的材料促进所述金属热界面材料在所述导热散热器上的润湿；以及
对所述金属热界面材料予以冷却，以使其固化，并在所述管芯和导热散热器之间形成热和结构耦合。
2.如权利要求1所述的方法，其中所述润湿层的材料包括金、银、钯和锡中的至少一种。
3.如权利要求1所述的方法，其中所述润湿层的材料是金。
4.如权利要求3所述的方法，其中所述润湿层的厚度在0.02微米到3.0微米之间。
5.如权利要求4所述的方法，其中所述润湿层的厚度约为0.2微米。
6.如权利要求1所述的方法，其中所述金属热界面材料包括铟。
7.如权利要求1所述的方法，其中所述金属热界面材料被加热并在达到所述润湿层的熔融温度之前予以冷却。
8.一种电子组件，包括：
导热散热器；
非镍的材料的润湿层，所述润湿层形成在所述导热散热器的下表面上；
管芯，所述管芯具有形成于其中的集成电路；和
与所述润湿层不同材料的金属热界面材料，所述金属热界面材料位于所述管芯上，而所述润湿层的下表面位于所述金属热界面材料的上表面上，所述金属热界面材料已被加热，以使其熔融，并且对其予以冷却，以使其固化，并在所述管芯和所述导热散热器之间形成热和结构界面。
9.如权利要求8所述的电子组件，其中所述润湿层的材料是金。
10.如权利要求9所述的电子组件，其中在所述金属热界面材料被熔融之前，所述润湿层的厚度在0.02微米到3.0微米之间。
11.如权利要求10所述的电子组件，其中在所述金属热界面材料被熔融之前，所述润湿层的厚度约为0.2微米。
12.如权利要求8所述的电子组件，其中所述润湿层的一部分没有位于所述管芯和所述导热散热器之间。
13.如权利要求12所述的电子组件，其中所述部分是金，其厚度在0.02微米到3.0微米之间。
14.如权利要求8所述的电子组件，其中所述润湿层选择这样的材料和厚度，以使所述组件能够在125℃和-55℃之间循环至少40次而不会对所述散热器和所述界面材料之间的界面造成明显破坏。
15.如权利要求8所述的电子组件，其中所述金属热界面材料具有至少35W/mK的导热率。
16.如权利要求15所述的电子组件，其中所述金属热界面材料具有至少70W/mK的导热率。
17.如权利要求8所述的电子组件，其中所述金属热界面材料包括铟。
18.如权利要求8所述的电子组件，其中所述导热散热器包括主散热结构和所述主散热结构上的扩散阻挡层，所述扩散阻挡层位于所述润湿层和所述主散热结构之间，并由这样的材料制成，所述材料防止所述润湿层的材料通过其扩散到所述主散热结构。
19.如权利要求18所述的电子组件，其中所述主散热结构由铜制成。
20.如权利要求18所述的电子组件，其中所述扩散阻挡层由镍制成。
21.如权利要求8所述的电子组件，还包括：
衬底，所述管芯被安装在所述衬底的上表面。
22.一种电子组件，包括：
衬底；
管芯，所述管芯具有形成在其下表面中的集成电路，并被安装在所述衬底的上表面上；
导热散热器，包括主散热结构和形成在所述主散热结构下表面上的镍扩散阻挡层；
形成所述扩散阻挡层下表面上的润湿层，所述润湿层的材料是非镍的材料；和
不同于所述润湿层的铟热界面材料，所述铟热界面材料位于所述管芯上，而所述润湿层的下表面位于所述铟热界面材料的上表面上，所述铟热界面材料已被加热，以使其熔融，并且对其予以冷却，以使其固化，并在所述管芯和所述导热散热器之间形成热和结构界面。
23.如权利要求22所述的电子组件，其中所述润湿层的材料至少是金、银和锡中的至少一种。
24.如权利要求22所述的电子组件，其中所述润湿层的材料是金。
25.如权利要求24所述的电子组件，其中所述润湿层的厚度在0.02微米到3.0微米之间。
26.如权利要求22所述的电子组件，其中所述润湿层选择这样的材料和厚度，以使所述组件能够在125℃和-55℃之间循环至少40次而不会对所述散热器和所述界面材料之间的界面造成明显破坏。
27.一种构造电子组件的方法，包括
按次序一个接一个地放置管芯、金属热界面材料、非镍的材料的润湿层和导热散热器；
加热所述金属热界面材料，以使其熔融，所述润湿层的材料促进所述金属热界面材料在所述导热散热器上的润湿；以及
对所述金属热界面材料予以冷却，以使其固化，并且在所述管芯和所述导热加热器之间形成热和结构耦合。
28.如权利要求27所述的方法，其中所述润湿层的材料包括金、银、钯和锡中的至少一种。
29.如权利要求27所述的方法，其中所述金属热界面材料包括铟。
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