CN1582493A - 在sonos闪存中的双倍密度核心栅极 - Google Patents
在sonos闪存中的双倍密度核心栅极 Download PDFInfo
- Publication number
- CN1582493A CN1582493A CN02819283.4A CN02819283A CN1582493A CN 1582493 A CN1582493 A CN 1582493A CN 02819283 A CN02819283 A CN 02819283A CN 1582493 A CN1582493 A CN 1582493A
- Authority
- CN
- China
- Prior art keywords
- memory cell
- oxide
- dielectric medium
- cell grid
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/971,483 | 2001-10-05 | ||
US09/971,483 US6630384B1 (en) | 2001-10-05 | 2001-10-05 | Method of fabricating double densed core gates in sonos flash memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1582493A true CN1582493A (zh) | 2005-02-16 |
CN100407411C CN100407411C (zh) | 2008-07-30 |
Family
ID=25518442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN028192834A Expired - Lifetime CN100407411C (zh) | 2001-10-05 | 2002-09-30 | 在sonos闪存中的双倍密度核心栅极 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6630384B1 (zh) |
EP (1) | EP1436833A2 (zh) |
JP (1) | JP4482704B2 (zh) |
KR (1) | KR20050032502A (zh) |
CN (1) | CN100407411C (zh) |
AU (1) | AU2002362647A1 (zh) |
TW (1) | TW587331B (zh) |
WO (1) | WO2003032393A2 (zh) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6835630B2 (en) * | 2002-06-19 | 2004-12-28 | Promos Technologies, Inc. | Capacitor dielectric structure of a DRAM cell and method for forming thereof |
US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US6797565B1 (en) * | 2002-09-16 | 2004-09-28 | Advanced Micro Devices, Inc. | Methods for fabricating and planarizing dual poly scalable SONOS flash memory |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US6797567B2 (en) * | 2002-12-24 | 2004-09-28 | Macronix International Co., Ltd. | High-K tunneling dielectric for read only memory device and fabrication method thereof |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
US6939767B2 (en) * | 2003-11-19 | 2005-09-06 | Freescale Semiconductor, Inc. | Multi-bit non-volatile integrated circuit memory and method therefor |
US6962849B1 (en) | 2003-12-05 | 2005-11-08 | Advanced Micro Devices, Inc. | Hard mask spacer for sublithographic bitline |
US6872609B1 (en) | 2004-01-12 | 2005-03-29 | Advanced Micro Devices, Inc. | Narrow bitline using Safier for mirrorbit |
US6958272B2 (en) * | 2004-01-12 | 2005-10-25 | Advanced Micro Devices, Inc. | Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cell |
US6989320B2 (en) * | 2004-05-11 | 2006-01-24 | Advanced Micro Devices, Inc. | Bitline implant utilizing dual poly |
US7176113B1 (en) | 2004-06-07 | 2007-02-13 | Spansion Llc | LDC implant for mirrorbit to improve Vt roll-off and form sharper junction |
US20060046403A1 (en) * | 2004-08-31 | 2006-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming separated charge-holding regions in a semiconductor device |
US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
US7652320B2 (en) * | 2005-03-03 | 2010-01-26 | Macronix International Co., Ltd. | Non-volatile memory device having improved band-to-band tunneling induced hot electron injection efficiency and manufacturing method thereof |
TWI246749B (en) * | 2005-03-08 | 2006-01-01 | Powerchip Semiconductor Corp | Method of fabricating a non-volatile memory |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
US7804126B2 (en) | 2005-07-18 | 2010-09-28 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
US7977227B2 (en) * | 2005-08-15 | 2011-07-12 | Macronix International Co., Ltd. | Method of manufacturing a non-volatile memory device |
US7414282B2 (en) * | 2005-08-15 | 2008-08-19 | Macronix International Co., Ltd. | Method of manufacturing a non-volatile memory device |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US20080096357A1 (en) * | 2006-10-20 | 2008-04-24 | Spansion Llc | Method for manufacturing a memory device |
KR101897214B1 (ko) * | 2011-11-16 | 2018-10-23 | 주식회사 원익아이피에스 | 박막 제조 방법 |
US9281198B2 (en) * | 2013-05-23 | 2016-03-08 | GlobalFoundries, Inc. | Method of fabricating a semiconductor device including embedded crystalline back-gate bias planes |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4173766A (en) | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory cell |
US5168334A (en) | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
US5268319A (en) * | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
JP3358663B2 (ja) | 1991-10-25 | 2002-12-24 | ローム株式会社 | 半導体記憶装置およびその記憶情報読出方法 |
US5644533A (en) | 1992-11-02 | 1997-07-01 | Nvx Corporation | Flash memory system, and methods of constructing and utilizing same |
US6201277B1 (en) * | 1993-08-31 | 2001-03-13 | Texas Instruments Incorporated | Slot trench isolation for flash EPROM |
US5467038A (en) * | 1994-02-15 | 1995-11-14 | Hewlett-Packard Company | Quick resolving latch |
US5387534A (en) * | 1994-05-05 | 1995-02-07 | Micron Semiconductor, Inc. | Method of forming an array of non-volatile sonos memory cells and array of non-violatile sonos memory cells |
DE19505293A1 (de) | 1995-02-16 | 1996-08-22 | Siemens Ag | Mehrwertige Festwertspeicherzelle mit verbessertem Störabstand |
US5996603A (en) | 1996-03-21 | 1999-12-07 | Dupler; Marion Dale | Apparatus and method for an in-line valve-controllable outlet |
US5768192A (en) | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
EP0916162A1 (de) * | 1996-08-01 | 1999-05-19 | Siemens Aktiengesellschaft | Verfahren zum betrieb einer speicherzellenanordnung |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US5963465A (en) | 1997-12-12 | 1999-10-05 | Saifun Semiconductors, Ltd. | Symmetric segmented memory array architecture |
TW358236B (en) | 1997-12-19 | 1999-05-11 | Nanya Technology Corp | Improved local silicon oxidization method in the manufacture of semiconductor isolation |
EP1068645B1 (de) * | 1998-03-24 | 2014-05-07 | Infineon Technologies AG | Speicherzellenanordnung und verfahren zu ihrer herstellung |
CN1165999C (zh) * | 1998-03-24 | 2004-09-08 | 因芬尼昂技术股份公司 | 存储器单元装置及其制造方法 |
US6030871A (en) | 1998-05-05 | 2000-02-29 | Saifun Semiconductors Ltd. | Process for producing two bit ROM cell utilizing angled implant |
US6215148B1 (en) | 1998-05-20 | 2001-04-10 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
JP2002539611A (ja) * | 1999-03-09 | 2002-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 不揮発性メモリを有する半導体装置 |
JP4012341B2 (ja) * | 1999-07-14 | 2007-11-21 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
DE10051483A1 (de) * | 2000-10-17 | 2002-05-02 | Infineon Technologies Ag | Nichtflüchtige Halbleiterspeicherzellenanordnung und Verfahren zu deren Herstellung |
-
2001
- 2001-10-05 US US09/971,483 patent/US6630384B1/en not_active Expired - Lifetime
-
2002
- 2002-09-30 JP JP2003535257A patent/JP4482704B2/ja not_active Expired - Lifetime
- 2002-09-30 AU AU2002362647A patent/AU2002362647A1/en not_active Abandoned
- 2002-09-30 CN CN028192834A patent/CN100407411C/zh not_active Expired - Lifetime
- 2002-09-30 EP EP02800870A patent/EP1436833A2/en not_active Withdrawn
- 2002-09-30 KR KR1020047005018A patent/KR20050032502A/ko not_active Application Discontinuation
- 2002-09-30 WO PCT/US2002/031330 patent/WO2003032393A2/en active Application Filing
- 2002-10-03 TW TW091122815A patent/TW587331B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP4482704B2 (ja) | 2010-06-16 |
EP1436833A2 (en) | 2004-07-14 |
US6630384B1 (en) | 2003-10-07 |
JP2005506692A (ja) | 2005-03-03 |
TW587331B (en) | 2004-05-11 |
WO2003032393A2 (en) | 2003-04-17 |
AU2002362647A1 (en) | 2003-04-22 |
CN100407411C (zh) | 2008-07-30 |
KR20050032502A (ko) | 2005-04-07 |
WO2003032393A3 (en) | 2003-10-09 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SPANSION CO., LTD. Free format text: FORMER OWNER: SPANSION CO.,LTD. Effective date: 20070413 Owner name: SPANSION CO.,LTD. Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20070413 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070413 Address after: California, USA Applicant after: SPANSION LLC Address before: California, USA Applicant before: Spanson Co. Effective date of registration: 20070413 Address after: California, USA Applicant after: Spanson Co. Address before: California, USA Applicant before: ADVANCED MICRO DEVICES, Inc. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160411 Address after: California, USA Patentee after: CYPRESS SEMICONDUCTOR Corp. Address before: California, USA Patentee before: SPANSION LLC |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20080730 |