CN1525555A - 半导体装置及其制造和安装方法、电路基板以及电子机器 - Google Patents

半导体装置及其制造和安装方法、电路基板以及电子机器 Download PDF

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CN1525555A
CN1525555A CNA2004100068208A CN200410006820A CN1525555A CN 1525555 A CN1525555 A CN 1525555A CN A2004100068208 A CNA2004100068208 A CN A2004100068208A CN 200410006820 A CN200410006820 A CN 200410006820A CN 1525555 A CN1525555 A CN 1525555A
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semiconductor device
mark
substrate
insulating barrier
boss
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桥元伸晃
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Seiko Epson Corp
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Abstract

本发明提供一种半导体装置。该半导体装置，包含：具有与集成电路(12)电连接的电极(14)的基板(10)；与电极(14)电连接的外部端子(40)；设置在基板(10)的外部端子(40)侧的面上的具有光穿透性的绝缘层(50)；设置在基板(10)上并被绝缘层(50)所覆盖，可以透过绝缘层(50)而识别的标记(30)。由此，可以容易地判别半导体装置的方向。

Description

半导体装置及其制造和安装方法、电路基板以及电子机器
技术领域
本发明涉及半导体装置、半导体装置的制造方法及其安装方法，电路基板以及电子机器。
背景技术
作为半导体装置的组件，晶片级CSP(芯片尺寸组件)的普及日益提高，但是以往，以在与元件形成面相反的面上施加的标记特定为制成品的半导体装置的方向。也就是说，由以往的技术，在半导体装置的构造上，无法从半导体装置的元件形成面侧，通过识别标记而判别半导体装置的方向。特别是当将多个外部端子左右对称地排列的情况下，从其构造判别半导体装置的方向是极其困难的。
发明内容
本发明的目的在于可以容易地判别半导体装置的方向
(1)本发明的半导体装置，包含：具有与集成电路电连接的电极的基板；与所述电极电连接的外部端子；设置在所述基板的所述外部端子侧的面上的具有光穿透性的绝缘层；设置在所述基板上被所述绝缘层所覆盖，并可以透过所述绝缘层而识别的标记。
根据本发明，由于从基板的外部端子侧的面上，透过绝缘层而识别标记，因此，可以容易地判别半导体装置的方向。由此，可以从半导体装置的构造本身判别其方向，半导体装置的处理更方便。
(2)在该半导体装置中，
所述基板是半导体基板，
所述集成电路也可以形成在所述半导体基板上。
(3)在该半导体装置中，还包含：
在形成所述半导体基板的所述电极的面上，避开所述电极而形成的树脂层；
从所述电极延伸到所述树脂层上，包含形成在所述树脂层上的凸台的布线层，
在所述凸台上设置所述外部端子，
也可以形成所述绝缘层，使之露出所述外部端子的至少一部分，并覆盖所述布线层。
(4)在该半导体装置中，
也可以在所述树脂层上形成所述标记。
(5)在该半导体装置中，
在所述半导体基板上形成钝化膜，
也可以在所述钝化膜上形成所述标记。
(6)在半导体装置中，
也可以以与所述布线层材料的至少一部分相同的材料形成所述标记。由此，比如，可以以与布线层同一工序形成标记。
(7)在该半导体装置中，
也可以在与所述布线层非接触区域形成所述标记。
(8)在该半导体装置中，
具有多个所述凸台，
在所述多个凸台中，第一个凸台的形状具有所述标记，并且也可以第二个凸台的形状与第一个凸台的形状不同。由此，第一个凸台的一部分或者全体成为标记，因此可以减少部件数量。
(9)在该半导体装置中，
所述外部端子是焊料球
所述绝缘层也可以是焊料保护层。
(10)在该半导体装置中，
所述半导体基板也可以是半导体芯片。
(11)在该半导体装置中，
也可以在所述半导体芯片的四角的至少一个角部设置所述标记。
(12)在该半导体装置中，
所述半导体基板也可以是半导体晶片，并在多个区域具有所述集成电路。
(13)在本发明的电路基板上，安装上述半导体装置。
(14)本发明的电子机器，具有上述半导体装置。
(15)本发明的半导体装置的安装方法，包含将上述半导体装置安装在电路基板上的步骤，
通过透过所述绝缘层识别所述标记，来判别所述半导体装置在安装时的方向。
(16)本发明的半导体装置的制造方法，包含：
在具有与集成电路电连接的电极的基板的一方的面上形成标记的步骤；
在所述基板的所述标记侧的面上，形成与所述电极电连接的外部端子的步骤；
为了覆盖所述标记而设置具有光穿透性的绝缘层的步骤。
附图说明
图1是本发明实施例的半导体装置的俯视图。
图2是本发明实施例的半导体装置的剖面图。
图3是本发明实施例的半导体装置的部分俯视图。
图4是本发明实施例的半导体装置的部分俯视图。
图5是本发明实施例的半导体装置的部分俯视图。
图6是本发明实施例的半导体装置的部分俯视图。
图7是本发明实施例的半导体装置的部分俯视图。
图8是本发明实施例的半导体装置的部分俯视图。
图9是表示本发明实施例的电路基板的图。
图10是表示本发明实施例的电子机器的图。
图11是表示本发明实施例的电子机器的图。
图中：10-半导体基板，12-集成电路，14-电极，18-树脂层，20-布线层，22-第一凸台，24-第二凸台，30-标记，32-标记，34-标记，36-标记，38-标记，40-外部端子，50-绝缘层，60-标记，62-标记
具体实施方式
以下，参照附图对本发明的实施例进行说明。
图1是除去本实施例的半导体装置的一部分(绝缘层50)的俯视图。图2是本实施例的半导体装置的剖面图(图1的II-II剖面图)。图3～图6是表示标记的其它形态的半导体装置的部分俯视图。
半导体装置1包含基板(在本实施例中就是半导体基板10)。半导体基板10，如图1所示，可以是半导体芯片，或者也可以是半导体晶片。在半导体基板10上，形成集成电路12(参照图2)，在集成电路12上形成电连接的电极(比如衬垫)14。当是半导体芯片时，多在一个区域形成集成电路12。当是半导体晶片时，在多个区域形成形成集成电路12的情况较多。在半导体基板10的任意面上形成多个电极14。也可以沿着半导体芯片(或成为半导体芯片的区域)的端部(比如对向的两边或四边)排列多个电极14。在半导体基板10的表面(形成电极14的面)上，形成钝化膜(比如硅氮化膜或硅氧化膜)16。
在本实施例中，在形成半导体基板10的电极14的面上(比如钝化膜16上)，形成一层或由多层构成的树脂层18。避开电极14而形成树脂层18。如图1所示，树脂层18也可以形成在半导体芯片的中央部。也可以使树脂层18侧面倾斜，以便使其相反的面(底面)比上面更大。树脂层18也可以具有应力缓和功能。树脂层18可以由聚酰亚胺树脂、硅变性聚酰亚胺树脂、环氧树脂、硅变性环氧树脂、苯并环丁烷(BCB：benzocyclobutene)、聚苯并锷唑(PBO：polybenzoxazole)等树脂形成。树脂层18也可以形成在半导体基板10与后述的外部端子40之间。
在本实施例中，半导体装置1包含布线层20。在形成半导体基板10的电极14的面上形成布线层20。由导电材料(比如金属)形成布线层20。如图1所示形成多个布线层20，由一层或者多层形成各布线层20。当为多层时，考虑构造的可靠性以及电特性，也可以将不同的材料(比如铜(Cu)、铬(Cr)、钛(Ti)、镍(Ni)、钛钨(TiW)、金(Au)、铝(Al)、镍钒(NiV)、钨(W)等)组合起来而形成布线层。形成的布线层20覆盖电极14，并与电极14电连接。布线层20从电极14延续到树脂层18上面。形成的布线层20通过树脂层18的侧面(倾斜面)并到达其上面。
布线层20包含多个凸台(在本实施例中为第一以及第二凸台22、24)。凸台是电连接部，为了提高电特性，在表面上形成电镀层(图中未示)。凸台形成在树脂层18上。凸台也可以比布线层20的线更宽，比如也可以是圆形凸台。
半导体装置1包含多个外部端子40。在形成半导体基板10的电极14的面上形成外部端子40。外部端子40与电极14电连接。如图1以及图2所示，外部端子40与布线层20电连接。外部端子也可以设置在凸台上。外部端子40也可以由具有导电性的金属形成。外部端子40也可以由焊接材料形成。外部端子40，比如可以做成球状，比如也可以是焊锡球。在图1所示的例中，多个外部端子40在半导体基板10的平面上来看，左右对称地配置。
半导体装置1包含绝缘层(比如由树脂构成的层)50。绝缘层50具有光穿透性，比如可以是由透明或半透明的材料形成。绝缘层50，由一层或多层(图2所示的例子中是第一以及第二绝缘层52、54)形成。绝缘层50设置在半导体基板10的外部端子40侧的面上。更具体地，形成的绝缘层50使得外部端子40的至少一部分露出(使外部端子40的前端部露出)，并覆盖布线层20。绝缘层50也可以作为焊料保护层使用。
在图2所示的例中，绝缘层50包含第一以及第二绝缘层52、54。第一以及第二绝缘层52、54如上所述具有光穿透性。也可以在形成布线层20以后，使其覆盖布线层20的至少一部分而形成第一绝缘层52。如图2所示，也可以至少除去凸台的中央部而形成第一绝缘层52。通过形成第一绝缘层52，可以防止布线层20的氧化、腐蚀或者断线等。
第二绝缘层54层叠在第一绝缘层52的上面。也可以在形成了外部端子40以后，在第一绝缘层52上形成第二绝缘层54。设置第二绝缘层54并使外部端子40的前端部露出。此时，第二绝缘层54覆盖外部端子40的根基部(下端部)。由此，可以对外部端子40的根基部进行强固。
半导体装置1包含标记30。标记30形成在半导体基板10的外部端子40侧的面上(比如树脂层18上)，被绝缘层50(在图2中是第一以及第二绝缘层52、54)所覆盖。由于绝缘层50具有光穿透性，所以可以透过绝缘层50而识别标记30。由此，由于在标记20上设置绝缘层50，因此可以防止标记30的破损、剥离或者由氧化而引起的变色，通过标记30可以确实地判别半导体装置的方向。
在至少以可以知道半导体装置1(或半导体基板10)的方向(平面方向)的位置或者形状上形成标记30。比如，可以将标记30的形状形成为能够判别任意方向的形状(比如箭头形状)。或者也可以在半导体基板10的端部(比如角部)形成标记30。这样，只要识别标记30的位置(即使不识别其形状)，也可以判别半导体装置的方向。另外，标记30可以是一个也可以是多个。
标记30可以由与布线层20的材料的至少一部分(当布线层20为多层的情况下，则为其中的至少一层)相同的材料形成。比如，当布线层20由金属构成时，标记也可以由金属形成。当布线层20由多层形成的情况下，标记也可以由多层形成。
这样，由于可以在与布线层30同一工序中形成标记30，因此，可以消减成本以及工序数量。
在图1以及图2所示的例中，在多个之中任意一个凸台的一部分成为标记30。更具体地，至少一个第一凸台22的形状具有标记30，第二凸台24的形状与第一凸台22的形状不同。在图1所示例中，第一凸台22的形状具有：设置在中央部的外部端子40的圆形部分、以及从该圆形部分突出的突出部分(在图1中为四角形的部分)，该突出部分也可以是标记30。该突出部分也可以设置在与第一凸台22的线相反侧上。与上述不同，也可以说第一凸台22的形状的整体是标记30。因此，由于第一凸台22的一部分或者全体成为标记30，因此可以减少半导体装置的部件数量。而且，与独立形成标记30的情况相比，可以有效地利用半导体装置的空间。如果将此事适用于半导体装置与半导体芯片尺寸基本相等的CSP(Chip Size Package)时，则特别有效。
对标记的形状(或者第一凸台22的表面形状)没有特别的限制，如图3～图6所示，可以有各种各样的变形。如图3所示，也可以将作为标记32的所述的突出部分做成三角形。如图4所示，也可以将作为标记34的所述突出部分做成组合多个多角形的形状(比如凸形)。如图5所示，作为标记36的所述突出部分并不限定于在第一凸台22的线的相反侧，比如，也可以设置在与线呈直角的侧。如图6所示，作为标记38的所述突出部，也可以设置在多个部位(比如在图1以及图5的两方的部位)。
作为本实施例的变形例，如图7以及图8所示，也可以从布线层20独立而形成标记60(标记62)。即，也可以在与布线层20(凸台22)非接触的区域上设置标记60(标记62)。如图7所示，也可以在钝化层16(参照图2)的上面，以与前述的布线层同一的工艺形成标记60。如图8所示，也可以在树脂层18上面，以与前述的布线层同一的工艺形成标记62。这样，由于可以不受凸台配置的限制而设置标记，所以可以在容易识别的位置上形成标记，可以容易地判别半导体装置的方向。进而，由于没有必要邻接布线层20设置标记，因此也可以提高从电极14到凸台22之间的布线层20的引绕线的自由度。而且，如图7、图8所示，也可以在半导体芯片的四角之中的至少一个角部设置标记60(标记62)。
作为本实施例的变形例，半导体装置也可以包含基板(比如可变尺寸夹层基板)以及安装在基板上的半导体芯片(形成集成电路)。此时，在基板上，形成与半导体芯片的集成电路电连接的电极(比如布线模型的端子部)。在基板(具体地是在形成基板电极的面侧)上形成用于判别半导体装置的方向的标记。
根据本实施例的半导体装置，由于从基板(半导体基板10)的外部端子40侧的面上，透过绝缘层50而识别标记，因此可以容易地判别半导体装置的方向。由此，可以从半导体装置的构造本身判别其方向，方便半导体装置的处理。
本实施例的半导体装置的制造方法，包含：在基板(在本实施例是半导体基板10)的一方的面上(比如电极14的形成面)形成标记30，并在形成半导体基板10的标记30的侧的面上形成外部端子40，并设置绝缘层50使之覆盖标记30。如上所述，由于绝缘层50具有光穿透性，所以，可以透过绝缘层50而识别标记30。当半导体基板10是半导体晶片的情况下，将半导体基板10切割成多个集成电路12的每个区域。将半导体基板10切割开而得到多个半导体装置。由此，以晶片为单位作成组件。另外，由于可以从上述的半导体装置中说明的内容导出其它的事项以及效果，因此予以省略。
本实施例的半导体装置的安装方法，包含将半导体装置1(包含半导体芯片)安装到电路基板(比如主板(参照图9))上，并且通过透过绝缘层50识别标记30而判别半导体装置1的安装方向。由此，可以从半导体装置的构造本身判别其方向。另外，由于可以从上述的半导体装置中说明的内容导出其它的事项以及效果，因此予以省略。
在图9中，表示安装了本发明的实施例的半导体装置1的电路基板1000。作为具有本发明的实施例的半导体装置的电子机器，在图10中，表示笔记本型微机2000，而在图11中，表示手持电话3000。
本发明，并不限定上述的实施例，可以有各种各样的变形。比如，本发明包含与实施例中说明的构成在实质上同一的构成(比如在功能、方法以及结果上同一构成，或者在目的以及结果上同一的构成)。而且，本发明包含将在实施例中说明的构成的非本质的部分进行置换的构成。而且，本发明包含与实施例中说明的构成发挥同一作用的构成或者可以达到同一目的构成。而且，本发明包含在实施例中说明的构成中附加周知技术的构成。

Claims (16)

1.一种半导体装置，其特征在于：包含：
具有与集成电路电连接的电极的基板；
与所述电极电连接的外部端子；
设置在所述基板的所述外部端子侧的面上的具有光穿透性的绝缘层；
设置在所述基板上，被所述绝缘层所覆盖，并可以透过所述绝缘层而识别的标记。
2.如权利要求1所述的半导体装置，其特征在于：所述基板是半导体基板，将所述集成电路形成在所述半导体基板上。
3.如权利要求2所述的半导体装置，其特征在于：还包含：
在形成所述半导体基板的所述电极的面上，避开所述电极而形成的树脂层；
从所述电极延伸到所述树脂层上，包含形成所述树脂层上的凸台的布线层，
在所述凸台上设置所述外部端子，
形成所述绝缘层，使之露出所述外部端子的至少一部分，并覆盖所述布线层。
4.如权利要求3所述的半导体装置，其特征在于：在所述树脂层上形成所述标记。
5.如权利要求3所述的半导体装置，其特征在于：
在所述半导体基板上形成钝化膜，
在所述钝化膜上形成所述标记。
6.如权利要求3～5中任意一项所述的半导体装置，其特征在于：
用与所述布线层材料的至少一部分相同的材料形成所述标记。
7.如权利要求3～6中任意一项所述的半导体装置，其特征在于：
在与所述布线层非接触区域形成所述标记。
8.如权利要求3～6中任意一项所述的半导体装置，其特征在于：
具有多个所述凸台，
在所述多个凸台中，第一个凸台的形状具有所述标记，第二个凸台的形状与第一个凸台的形状不同。
9.如权利要求1～8中任意一项所述的半导体装置，其特征在于：
所述外部端子是焊料球
所述绝缘层是焊料保护层。
10.如权利要求1～9中任意一项所述的半导体装置，其特征在于：
所述半导体基板是半导体芯片。
11.如权利要求10所述的半导体装置，其特征在于：
在所述半导体芯片的四角的至少一个角部设置所述标记。
12.如权利要求1～9中任意一项所述的半导体装置，其特征在于：
所述半导体基板是半导体晶片，并在多个区域具有所述集成电路。
13.一种电路基板，其特征在于：安装了如权利要求1～12中任意一项所述的半导体装置。
14.一种电子机器，其特征在于：安装了如权利要求1～12中任意一项所述的半导体装置。
15.一种半导体装置的安装方法，其特征在于：包含将权利要求1～12中任意一项所述的半导体装置安装在电路基板上的工序，
通过透过所述绝缘层识别所述标记，来判别所述半导体装置在安装时的方向。
16.一种半导体装置的制造方法，其特征在于：包含：
在具有与集成电路电连接的电极的基板的一方的面上形成标记的步骤；
在所述基板的所述标记侧的面上，形成与所述电极电连接的外部端子的步骤；
为了覆盖所述标记而设置光穿透性的绝缘层的步骤。
CNA2004100068208A 2003-02-27 2004-02-24 半导体装置及其制造和安装方法、电路基板以及电子机器 Pending CN1525555A (zh)

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US20040183178A1 (en) 2004-09-23
US7061127B2 (en) 2006-06-13

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