CN1502117A - 半导体晶片及其制造方法 - Google Patents
半导体晶片及其制造方法 Download PDFInfo
- Publication number
- CN1502117A CN1502117A CNA028081331A CN02808133A CN1502117A CN 1502117 A CN1502117 A CN 1502117A CN A028081331 A CNA028081331 A CN A028081331A CN 02808133 A CN02808133 A CN 02808133A CN 1502117 A CN1502117 A CN 1502117A
- Authority
- CN
- China
- Prior art keywords
- wafer
- semiconductor wafer
- inclined plane
- interarea
- chamfer machining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000003754 machining Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 238000002474 experimental method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 238000013467 fragmentation Methods 0.000 description 4
- 238000006062 fragmentation reaction Methods 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP004124/2002 | 2002-01-11 | ||
JP2002004124A JP4162892B2 (ja) | 2002-01-11 | 2002-01-11 | 半導体ウェハおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1502117A true CN1502117A (zh) | 2004-06-02 |
CN1269185C CN1269185C (zh) | 2006-08-09 |
Family
ID=19190960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028081331A Expired - Lifetime CN1269185C (zh) | 2002-01-11 | 2002-12-17 | 半导体晶片及其制造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6900522B2 (zh) |
EP (1) | EP1465242B1 (zh) |
JP (1) | JP4162892B2 (zh) |
KR (1) | KR100536932B1 (zh) |
CN (1) | CN1269185C (zh) |
DE (1) | DE60217977T2 (zh) |
TW (1) | TWI291724B (zh) |
WO (1) | WO2003060965A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103180098A (zh) * | 2010-07-30 | 2013-06-26 | Memc电子材料有限公司 | 用于晶片的梯形磨削的磨削工具 |
CN106663623A (zh) * | 2014-09-11 | 2017-05-10 | 信越半导体株式会社 | 半导体晶圆的加工方法、贴合式晶圆的制造方法以及磊晶晶圆的制造方法 |
CN113227706A (zh) * | 2018-12-27 | 2021-08-06 | 胜高股份有限公司 | 半导体晶片的评价方法及半导体晶片的制造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3580311B1 (ja) * | 2003-03-28 | 2004-10-20 | 住友電気工業株式会社 | 表裏識別した矩形窒化物半導体基板 |
US20050161808A1 (en) * | 2004-01-22 | 2005-07-28 | Anderson Douglas G. | Wafer, intermediate wafer assembly and associated method for fabricating a silicon on insulator wafer having an improved edge profile |
US8710665B2 (en) | 2008-10-06 | 2014-04-29 | Infineon Technologies Ag | Electronic component, a semiconductor wafer and a method for producing an electronic component |
JP2013008769A (ja) * | 2011-06-23 | 2013-01-10 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法 |
TWI473283B (zh) * | 2011-09-21 | 2015-02-11 | Nat Univ Tsing Hua | 晶片 |
JP6130995B2 (ja) * | 2012-02-20 | 2017-05-17 | サンケン電気株式会社 | エピタキシャル基板及び半導体装置 |
JP2015018960A (ja) * | 2013-07-11 | 2015-01-29 | 三菱電機株式会社 | 半導体装置の製造方法 |
US10199216B2 (en) * | 2015-12-24 | 2019-02-05 | Infineon Technologies Austria Ag | Semiconductor wafer and method |
JP6750592B2 (ja) * | 2017-08-15 | 2020-09-02 | 信越半導体株式会社 | シリコンウエーハのエッジ形状の評価方法および評価装置、シリコンウエーハ、ならびにその選別方法および製造方法 |
CN116097404A (zh) * | 2021-09-07 | 2023-05-09 | Jx金属株式会社 | 磷化铟基板 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS504544B1 (zh) * | 1970-12-21 | 1975-02-20 | ||
JPH0624179B2 (ja) * | 1989-04-17 | 1994-03-30 | 信越半導体株式会社 | 半導体シリコンウェーハおよびその製造方法 |
JP2719855B2 (ja) * | 1991-05-24 | 1998-02-25 | 信越半導体株式会社 | ウエーハ外周の鏡面面取り装置 |
JP3027882B2 (ja) * | 1992-07-31 | 2000-04-04 | 信越半導体株式会社 | ウエーハ面取部研磨装置 |
JP2825048B2 (ja) * | 1992-08-10 | 1998-11-18 | 信越半導体株式会社 | 半導体シリコン基板 |
JP2827885B2 (ja) * | 1994-02-12 | 1998-11-25 | 信越半導体株式会社 | 半導体単結晶基板およびその製造方法 |
JPH09251934A (ja) * | 1996-03-18 | 1997-09-22 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体ウエハ |
JP3328193B2 (ja) * | 1998-07-08 | 2002-09-24 | 信越半導体株式会社 | 半導体ウエーハの製造方法 |
JP3516203B2 (ja) * | 1999-11-08 | 2004-04-05 | 株式会社日鉱マテリアルズ | 化合物半導体ウェハ |
JP4846915B2 (ja) * | 2000-03-29 | 2011-12-28 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
-
2002
- 2002-01-11 JP JP2002004124A patent/JP4162892B2/ja not_active Expired - Lifetime
- 2002-12-17 US US10/472,518 patent/US6900522B2/en not_active Expired - Lifetime
- 2002-12-17 DE DE60217977T patent/DE60217977T2/de not_active Expired - Lifetime
- 2002-12-17 EP EP02786107A patent/EP1465242B1/en not_active Expired - Lifetime
- 2002-12-17 CN CNB028081331A patent/CN1269185C/zh not_active Expired - Lifetime
- 2002-12-17 KR KR10-2003-7012325A patent/KR100536932B1/ko active IP Right Grant
- 2002-12-17 WO PCT/JP2002/013164 patent/WO2003060965A1/ja active IP Right Grant
-
2003
- 2003-01-03 TW TW092100105A patent/TWI291724B/zh not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103180098A (zh) * | 2010-07-30 | 2013-06-26 | Memc电子材料有限公司 | 用于晶片的梯形磨削的磨削工具 |
CN106663623A (zh) * | 2014-09-11 | 2017-05-10 | 信越半导体株式会社 | 半导体晶圆的加工方法、贴合式晶圆的制造方法以及磊晶晶圆的制造方法 |
CN106663623B (zh) * | 2014-09-11 | 2019-06-14 | 信越半导体株式会社 | 半导体晶圆的加工方法 |
CN113227706A (zh) * | 2018-12-27 | 2021-08-06 | 胜高股份有限公司 | 半导体晶片的评价方法及半导体晶片的制造方法 |
CN113227706B (zh) * | 2018-12-27 | 2022-11-11 | 胜高股份有限公司 | 半导体晶片的评价方法及半导体晶片的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE60217977T2 (de) | 2007-05-24 |
CN1269185C (zh) | 2006-08-09 |
JP4162892B2 (ja) | 2008-10-08 |
TW200301931A (en) | 2003-07-16 |
WO2003060965A1 (fr) | 2003-07-24 |
JP2003209033A (ja) | 2003-07-25 |
EP1465242A1 (en) | 2004-10-06 |
KR20040064612A (ko) | 2004-07-19 |
DE60217977D1 (de) | 2007-03-22 |
US20040113236A1 (en) | 2004-06-17 |
TWI291724B (en) | 2007-12-21 |
EP1465242A4 (en) | 2005-08-17 |
US6900522B2 (en) | 2005-05-31 |
KR100536932B1 (ko) | 2005-12-14 |
EP1465242B1 (en) | 2007-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: NIPPON MINING AND METALS CO., LTD. Free format text: FORMER NAME OR ADDRESS: NIKKO MATERIALS CO. LTD |
|
CP03 | Change of name, title or address |
Address after: Tokyo, Japan Patentee after: Nippon Mining & Metals Co.,Ltd. Address before: Tokyo, Japan Patentee before: NIKKO MATERIALS Co.,Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: JX NIPPON MINING + METALS CORP. Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corp. Address before: Tokyo, Japan Patentee before: Nippon Mining & Metals Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS Corp. Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corp. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20060809 |