CN1485393A - 半导体装置的研磨剂和用研磨剂的半导体装置的制造方法 - Google Patents

半导体装置的研磨剂和用研磨剂的半导体装置的制造方法 Download PDF

Info

Publication number
CN1485393A
CN1485393A CNA03155119XA CN03155119A CN1485393A CN 1485393 A CN1485393 A CN 1485393A CN A03155119X A CNA03155119X A CN A03155119XA CN 03155119 A CN03155119 A CN 03155119A CN 1485393 A CN1485393 A CN 1485393A
Authority
CN
China
Prior art keywords
abrasive
particles
mentioned
semiconductor device
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA03155119XA
Other languages
English (en)
Chinese (zh)
Inventor
高安淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1485393A publication Critical patent/CN1485393A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • H10P95/062
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNA03155119XA 2002-08-22 2003-08-22 半导体装置的研磨剂和用研磨剂的半导体装置的制造方法 Pending CN1485393A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002242041A JP2004079968A (ja) 2002-08-22 2002-08-22 半導体装置の研磨剤及び研磨剤を用いた半導体装置の製造方法
JP242041/2002 2002-08-22

Publications (1)

Publication Number Publication Date
CN1485393A true CN1485393A (zh) 2004-03-31

Family

ID=31884572

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA03155119XA Pending CN1485393A (zh) 2002-08-22 2003-08-22 半导体装置的研磨剂和用研磨剂的半导体装置的制造方法

Country Status (5)

Country Link
US (2) US6878631B2 (enExample)
JP (1) JP2004079968A (enExample)
KR (1) KR100560012B1 (enExample)
CN (1) CN1485393A (enExample)
TW (1) TW200418965A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007008232A1 (de) * 2007-02-20 2008-08-21 Evonik Degussa Gmbh Dispersion enthaltend Ceroxid und kolloidales Siliciumdioxid
DE102007062572A1 (de) * 2007-12-22 2009-06-25 Evonik Degussa Gmbh Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion
JPWO2013099142A1 (ja) 2011-12-28 2015-04-30 コニカミノルタ株式会社 基板用研磨剤及び基板の製造方法
JP6560155B2 (ja) 2016-04-20 2019-08-14 信越化学工業株式会社 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の研磨方法
JP7038022B2 (ja) * 2018-08-06 2022-03-17 日揮触媒化成株式会社 セリア系微粒子分散液、その製造方法およびセリア系微粒子分散液を含む研磨用砥粒分散液
JP7038031B2 (ja) * 2018-09-28 2022-03-17 日揮触媒化成株式会社 セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液
US11685849B2 (en) 2019-10-11 2023-06-27 Saint-Gobain Abrasives, Inc. Abrasive particle including coating, abrasive article including the abrasive particles, and method of forming

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5684782A (en) * 1979-12-14 1981-07-10 Fuji Electric Co Ltd Cleaning abrasive material for electrophotographic photosensitive material
US4971602A (en) * 1989-09-26 1990-11-20 Crawford Robert B Method for grinding gear teeth
DE4217720C1 (de) * 1992-05-29 1993-11-04 Starck H C Gmbh Co Kg Gesinterte verbundschleifkoerper, verfahren zu ihrer herstellung sowie deren verwendung
JPH09321003A (ja) 1995-05-22 1997-12-12 Sumitomo Chem Co Ltd 研磨材およびその製造方法、ならびにそれを使用した半導体基板上の絶縁膜の平坦化方法
JPH10135163A (ja) 1996-09-03 1998-05-22 Sumitomo Chem Co Ltd 半導体基板上の金属膜研磨用組成物及びこれを使用した半導体基板上の金属膜の平坦化方法
US6602439B1 (en) * 1997-02-24 2003-08-05 Superior Micropowders, Llc Chemical-mechanical planarization slurries and powders and methods for using same

Also Published As

Publication number Publication date
TW200418965A (en) 2004-10-01
US6878631B2 (en) 2005-04-12
US20040036149A1 (en) 2004-02-26
KR20040018172A (ko) 2004-03-02
KR100560012B1 (ko) 2006-03-15
JP2004079968A (ja) 2004-03-11
US20050026441A1 (en) 2005-02-03

Similar Documents

Publication Publication Date Title
CN1292460C (zh) 用于化学机械抛光的浆料、抛光方法及半导体器件的制造方法
CN1220742C (zh) 介电质CMP浆液中CsOH的应用
EP2365042B1 (en) Polishing composition and polishing method using the same
CN1133705C (zh) 边抛光组合物
CN1209431C (zh) 用含氨基酸的组合物研磨内存或硬盘的方法
CN102206465B (zh) 使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法
CN1107097C (zh) 化学机械研磨组合物及方法
JP3668647B2 (ja) 半導体ウエハ基板の再生法および半導体ウエハ基板再生用研磨液
US9676966B2 (en) Chemical mechanical polishing composition and process
KR20230112263A (ko) 반도체 공정용 조성물, 이의 제조 방법 및 이를 이용한 반도체 소자 제조방법
CN1485393A (zh) 半导体装置的研磨剂和用研磨剂的半导体装置的制造方法
CN102686360A (zh) Cmp研磨液、以及使用其的研磨方法和半导体基板的制造方法
WO2019129107A1 (zh) 一种化学机械抛光液
CN1947945A (zh) 化学机械抛光装置及其抛光垫的清洗方法与平坦化的方法
CN100468646C (zh) 化学机械研磨方法
KR101070410B1 (ko) 연마용 조성물 및 이를 이용하는 연마방법
CN111615741A (zh) 硅晶圆的制造方法
CN1131288C (zh) 抛光组合物
KR102492236B1 (ko) 연마장치 및 웨이퍼의 연마방법
JP4301305B2 (ja) 基体研磨方法、半導体装置の製造方法
JPWO2018179062A1 (ja) 研磨液、研磨液セット、添加液及び研磨方法
CN1784771A (zh) 能够补偿纳米形貌效应的化学机械抛光用浆液组合物、以及利用其的半导体元件的表面平坦化方法
JPH11307487A (ja) ウェーハの研磨方法
CN1131551C (zh) 平面化腐蚀半导体器件的方法
JP2007123759A (ja) 半導体研磨用組成物および研磨方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication