TW200418965A - Abrasive for semiconductor device and method of manufacturing semiconductor device using the abrasive - Google Patents

Abrasive for semiconductor device and method of manufacturing semiconductor device using the abrasive Download PDF

Info

Publication number
TW200418965A
TW200418965A TW092121990A TW92121990A TW200418965A TW 200418965 A TW200418965 A TW 200418965A TW 092121990 A TW092121990 A TW 092121990A TW 92121990 A TW92121990 A TW 92121990A TW 200418965 A TW200418965 A TW 200418965A
Authority
TW
Taiwan
Prior art keywords
particles
abrasive
semiconductor device
polished
polishing
Prior art date
Application number
TW092121990A
Other languages
English (en)
Chinese (zh)
Inventor
Atsushi Takayasu
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200418965A publication Critical patent/TW200418965A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H10P95/062—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW092121990A 2002-08-22 2003-08-11 Abrasive for semiconductor device and method of manufacturing semiconductor device using the abrasive TW200418965A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002242041A JP2004079968A (ja) 2002-08-22 2002-08-22 半導体装置の研磨剤及び研磨剤を用いた半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200418965A true TW200418965A (en) 2004-10-01

Family

ID=31884572

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092121990A TW200418965A (en) 2002-08-22 2003-08-11 Abrasive for semiconductor device and method of manufacturing semiconductor device using the abrasive

Country Status (5)

Country Link
US (2) US6878631B2 (enExample)
JP (1) JP2004079968A (enExample)
KR (1) KR100560012B1 (enExample)
CN (1) CN1485393A (enExample)
TW (1) TW200418965A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007008232A1 (de) * 2007-02-20 2008-08-21 Evonik Degussa Gmbh Dispersion enthaltend Ceroxid und kolloidales Siliciumdioxid
DE102007062572A1 (de) * 2007-12-22 2009-06-25 Evonik Degussa Gmbh Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion
JPWO2013099142A1 (ja) 2011-12-28 2015-04-30 コニカミノルタ株式会社 基板用研磨剤及び基板の製造方法
JP6560155B2 (ja) 2016-04-20 2019-08-14 信越化学工業株式会社 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の研磨方法
JP7038022B2 (ja) * 2018-08-06 2022-03-17 日揮触媒化成株式会社 セリア系微粒子分散液、その製造方法およびセリア系微粒子分散液を含む研磨用砥粒分散液
JP7038031B2 (ja) * 2018-09-28 2022-03-17 日揮触媒化成株式会社 セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液
US11685849B2 (en) 2019-10-11 2023-06-27 Saint-Gobain Abrasives, Inc. Abrasive particle including coating, abrasive article including the abrasive particles, and method of forming

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5684782A (en) * 1979-12-14 1981-07-10 Fuji Electric Co Ltd Cleaning abrasive material for electrophotographic photosensitive material
US4971602A (en) * 1989-09-26 1990-11-20 Crawford Robert B Method for grinding gear teeth
DE4217720C1 (de) * 1992-05-29 1993-11-04 Starck H C Gmbh Co Kg Gesinterte verbundschleifkoerper, verfahren zu ihrer herstellung sowie deren verwendung
JPH09321003A (ja) 1995-05-22 1997-12-12 Sumitomo Chem Co Ltd 研磨材およびその製造方法、ならびにそれを使用した半導体基板上の絶縁膜の平坦化方法
JPH10135163A (ja) 1996-09-03 1998-05-22 Sumitomo Chem Co Ltd 半導体基板上の金属膜研磨用組成物及びこれを使用した半導体基板上の金属膜の平坦化方法
US6602439B1 (en) * 1997-02-24 2003-08-05 Superior Micropowders, Llc Chemical-mechanical planarization slurries and powders and methods for using same

Also Published As

Publication number Publication date
CN1485393A (zh) 2004-03-31
US6878631B2 (en) 2005-04-12
US20040036149A1 (en) 2004-02-26
KR20040018172A (ko) 2004-03-02
KR100560012B1 (ko) 2006-03-15
JP2004079968A (ja) 2004-03-11
US20050026441A1 (en) 2005-02-03

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